JP4597183B2 - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To facilitate stacking of many sheets of chips and finely connecting the chips without damaging the chips. <P>SOLUTION: A through-hole 6 is formed in an interior electrode 8 of a second semiconductor chip. A first metal 25 which can be formed by electroless-plating is formed on the inner wall of the through-hole in isolation from other electrodes. A second semiconductor chip 7 is fixed to a part of a first semiconductor chip except for an external electrode 3 and an interior electrode 4 with adhesive 5 so that the interior electrodes 4 and 8 of the first and second semiconductor chips, respectively, correspond to each other and the interior electrodes 4 and 8 and the first metal 25 of the inner wall of the through-hole are electrically connected by a second metal 15. Thus, the formation of the through-hole 6 formed in the interior electrode 8 of the second semiconductor chip and stacking of the semiconductor chips 1 and 7 with adhesive 5 enables a stack of many chips without damaging them. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device in which semiconductor chips having LSIs are stacked and electrically connected.

  In recent years, in order to reduce the cost and size of LSI semiconductor devices, semiconductor devices in which semiconductor chips having LSIs having different functions or LSIs formed by different processes are joined together in a face-down manner have been proposed. Has been.

  The conventional LSI semiconductor device will be described below with reference to FIG. First, the internal electrode (first internal electrode) 111 and the bonding pad 112 of the first semiconductor chip are formed on the first semiconductor chip 110, and the barrier metal (first metal chip) is formed on the first internal electrode 111. The first barrier metal) 113 is formed, and the second semiconductor chip barrier metal (second barrier metal) 122 on the internal electrode (second internal electrode) 121 of the second semiconductor chip and the bump made of solder The second internal electrode 121 on the second semiconductor chip 120 is electrically connected to each other via the 123. Further, an insulating resin 130 is filled between the first semiconductor chip 110 and the second semiconductor chip 120, and the first semiconductor chip 110 and the second semiconductor chip 120 have bumps 123 and an insulating resin. 130 is integrated.

  The first semiconductor chip 110 is fixed to the die pad 131 of the lead frame with a die bond resin 132, and the bonding pad 112 of the first semiconductor chip 110 and the external lead 133 of the lead frame are electrically connected via a bonding wire 134. It is connected to the. The first semiconductor chip 110, the second semiconductor chip 120, the bonding wire 133, the die pad 131, and a part of the external lead 133 are packaged with a sealing resin 135.

Hereinafter, the semiconductor device manufacturing method will be described with reference to FIG. First, as shown in FIG. 17A, solder bumps 123 are formed on the internal electrodes 121 of the second semiconductor chip 120 by electrolytic plating. As for the formation of the solder bumps 123, after the second barrier metal 122 is formed on the wafer of the second semiconductor chip 120 by vapor deposition, a bump pattern is formed by a resist, and the bumps 123 are formed by electrolytic solder plating. Next, the second barrier metal 122 is dissolved and removed by wet etching using the solder bump 123 as a mask, and then the solder bump 123 is reflowed into a hemispherical shape. Next, as shown in FIG. 17B, when the first semiconductor chip 110 is in a wafer state, an insulating resin 130 is applied onto the first semiconductor chip 110, and the solder bumps 123 of the second semiconductor chip 120 are formed. The internal electrodes 111 of the first semiconductor chip 110 are matched. Next, as shown in FIG. 17C, the second semiconductor chip 120 is placed on the first semiconductor chip 110. Thereafter, the solder bumps 122 are melted by heating, and the internal electrodes 121 of the second semiconductor chip 120 and the internal electrodes 111 of the first semiconductor chip 110 are joined by soldering. Next, as shown in FIG. 17D, the first semiconductor chip 110 is individually divided from the wafer state. Finally, as shown in FIG. 16, the first semiconductor chip 110 is die-bonded to the die frame 131 of the lead frame, the bonding pad 112 of the first semiconductor chip 110 and the external lead 132 of the lead frame are connected by wire bonding, and sealed. Packaged with a stop resin 135.
JP-A-8-213427

  However, according to the structure and manufacturing method of the conventional semiconductor device, since the connection between the first semiconductor chip and the second semiconductor chip is soldering using solder bumps, there are the following problems.

  (1) Since the first semiconductor chip is stacked on the second semiconductor chip by the face-down method, the chip can be stacked only up to two stages.

  (2) When the first semiconductor chip is stacked on the second semiconductor chip, the metal bumps are used, so that the chip may be damaged and the semiconductor element may be destroyed.

  (3) Since the solder melts at the time of joining, a dimensional change in which the solder bump spreads in the lateral direction occurs, and miniaturization is difficult.

  (4) Since the internal electrode of the semiconductor chip is usually Al, a metal film that easily diffuses with the solder, for example, Ti—Cu—Au or the like, must be formed on the Al electrode for solder bonding. There is a high cost.

  (5) Since the miniaturization is difficult and the internal electrodes of the first and second semiconductor chips are large, the electrical load capacity increases, and in signal transmission between the first semiconductor chip and the second semiconductor chip. The delay is large and the power consumption is large.

  Accordingly, an object of the present invention is to solve the above-described problems, and to provide a high-performance semiconductor device that can stack a large number of chips without damaging the chips and facilitates fine connection. It is to provide a manufacturing method.

  In order to solve the above-described problem, a first method for manufacturing a semiconductor device according to the present invention includes a through-hole penetrating the second semiconductor chip in an internal electrode of a second semiconductor chip stacked on the first semiconductor chip. A step of forming an insulating film on the inner wall and the back surface of the through hole, a step of forming a first metal on the inner wall of the through hole by electroless plating or vapor deposition, and the first and second semiconductor chips. The second semiconductor chip is bonded and fixed to a portion of the first semiconductor chip excluding the external electrode and the internal electrode in a state having a gap with respect to the first semiconductor chip so that the internal electrodes correspond to each other. And a step of electrically connecting the internal electrode of the second semiconductor chip and the first metal of the inner wall of the through hole to the internal electrode of the first semiconductor chip by electroless plating.

  As described above, the through hole is provided in the internal electrode of the second semiconductor chip, the first and second semiconductor chips are bonded and fixed, and the internal electrode of the second semiconductor chip and the first metal on the inner wall of the through hole are Since the internal electrodes of the first semiconductor chip are electrically connected by electroless plating, a large number of chips can be stacked without damaging the chips. In addition, since the first metal capable of electroless plating is formed on the inner wall of the through hole by electroless plating or vapor deposition, solder diffusion occurs in advance on the internal electrode of the chip instead of the conventional solder bump bonding. Metal formation is also unnecessary. For example, Cu, Ni, Au, Pt, Ag, Sn, Pb, Co or the like can be used as the first metal. Further, since solder bumps do not spread, fine connection is facilitated, and application to a multi-pin LSI becomes possible. In addition, the LSIs on one side can be bonded to each other in the wafer state, so that the cost can be reduced.

  According to a second method of manufacturing a semiconductor device of the present invention, a step of providing a through hole penetrating the second semiconductor chip in an internal electrode of a second semiconductor chip stacked on the first semiconductor chip, and the through hole The step of forming an insulating film on the inner wall and the back surface, the step of forming the first metal on the inner wall of the through hole by electroless plating or vapor deposition, and the inner electrodes of the first and second semiconductor chips correspond to each other. And a step of adhering and fixing the second semiconductor chip to a portion of the first semiconductor chip excluding the external electrode and the internal electrode in a state having a gap with respect to the first semiconductor chip; One or more second semiconductor chips are further arranged on the semiconductor chip so that the internal electrodes of the lower and upper second semiconductor chips correspond to each other, and the upper layer with respect to the lower second semiconductor chip. A step of adhering and fixing the second semiconductor chip in the upper layer to a portion excluding an internal electrode of the second semiconductor chip in the lower layer in a state where the second semiconductor chip has a gap; and the inside of the second semiconductor chip Electrically connecting the first metal of the electrode and the inner wall of the through hole and the internal electrode of the first semiconductor chip by electroless plating.

  According to this structure, it has the same effect as 1st invention.

  The first and second semiconductor device manufacturing methods preferably include a step of forming Cu, Ni, Au, Pt, Ag, Sn or the like as the first metal on the inner wall of the through hole.

  In the first and second semiconductor device manufacturing methods, the internal electrode of the second semiconductor chip, the first metal on the inner wall of the through hole, and the internal electrode of the first semiconductor chip are electrolessly plated. In the step of electrically connecting with Ni, it is preferable to plate Ni or Au by electroless plating.

  According to the method for manufacturing a semiconductor device of the present invention, a through hole is provided in the internal electrode of the second semiconductor chip, the first and second semiconductor chips are bonded and fixed, and the internal electrode and the through hole of the second semiconductor chip are bonded. Since the first metal on the inner wall of the hole and the internal electrode of the first semiconductor chip are electrically connected by electroless plating, it is possible to stack a large number of chips without damaging the chips. In addition, since the first metal capable of electroless plating is formed on the inner wall of the through hole by electroless plating or vapor deposition, solder diffusion occurs in advance on the internal electrode of the chip instead of the conventional solder bump bonding. Metal formation is also unnecessary. For example, Cu, Ni, Au, Pt, Ag, Sn, Pb, Co or the like can be used as the first metal. Further, since solder bumps do not spread, fine connection is facilitated, and application to a multi-pin LSI becomes possible. In addition, the LSIs on one side can be bonded to each other in the wafer state, so that the cost can be reduced.

  An embodiment of the present invention will be described with reference to FIGS. 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention, FIG. 2 is an enlarged view of a main part of FIG. 1, and FIGS. 3 to 15 are cross-sectional views showing a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG.

  1 and 2, 1 is a first semiconductor chip, 2 is a protective film of the semiconductor chip, 3 is an external electrode of the first semiconductor chip, 4 is an internal electrode of the first semiconductor chip, 5 is an adhesive, 6 is a through hole, 7 is a second semiconductor chip, 8 is an internal electrode of the second semiconductor chip, 9 is a third semiconductor chip, 10 is an internal electrode of the third semiconductor chip, and 11 is a second semiconductor chip. Oxide film, 12 is an oxide film of the third semiconductor chip, 13 is a plating electrode (second plating electrode) of the second semiconductor chip, and 14 is a plating electrode (third plating electrode) of the third semiconductor chip. , 15 is a plating electrode (second metal), 16 is a die bond resin, 17 is a lead frame lead, 18 is a lead frame die pad, 19 is a bonding wire, 20 is a sealing resin, and 21 is a second semiconductor chip. Wafer 22 is a wafer made of a third semiconductor chip, 23 is an electroless plating solution, 24 is an electroless plating bath, 25 is a plating metal film (first metal), 26 is a resist, 27 is an etching solution, and 28 is an etching bath. , 29 are first semiconductor chip wafers, 30 are collets, 31 are collet vacuum holes, 32 are dicing grooves, 33 are insulating resins, and 34 is an oxide film.

  As shown in FIG. 1, the first semiconductor chip 1 having the external electrode 3 and the internal electrode 4 and the second and third semiconductor chips 7 and 9 have a gap, and the external electrode 3 and the internal electrodes 4 and 8. , 10 are fixed by an adhesive 5 at portions other than. The second and third semiconductor chips 7 and 9 have through holes 6 extending to the back surface of the semiconductor chip in the internal electrodes 8 and 10 of the second and third semiconductor chips. Oxide films 11 and 12 of the second and third semiconductor chips are formed on the back surfaces of the semiconductor chips 7 and 9 to maintain insulation from the internal elements. On the inner wall of the through hole, Cu, Ni, Au, Pt, Ag, Sn, Pb, Co or the like, which is a plating metal film 25 capable of electroless plating, is formed. The internal electrodes 8 and 10 and the through holes 6 of the second and third semiconductor chips and the internal electrode 4 of the first semiconductor chip are electrically connected by a continuous plating electrode 15 having the same composition.

  Next, a method for manufacturing the semiconductor device having the above configuration will be described. 3 to 9 and 14, (b) is an enlarged view of (a). First, as shown in FIGS. 3A and 3B, the inner electrodes 8 and 10 of the second and third semiconductor chips of the wafers 21 and 22 made of the second and third semiconductor chips have a diameter of 10 μm by a laser. Open the through-hole 6 to the extent. The internal electrode size should be 15 μm □ or more. Next, as shown in FIGS. 4A and 4B, the oxide films 11 of the second and third semiconductor chips are formed on the side surfaces of the through holes 6 and the back surfaces of the wafers 21 and 22 made of the second and third semiconductor chips. 12 is formed. The oxide films 11 and 12 serve as insulating films for the internal elements of the semiconductor chip when electrodes are formed by electroless plating.

  Next, as shown in FIGS. 5A and 5B, a plated metal film 25 is formed on the entire surface of the wafers 21 and 22 and the through holes 6 made of the second and third semiconductor chips by electroless plating. For example, when the plating metal film 25 formed by electroless plating is Ni, the wafers 21 and 22 made of the second and third semiconductor chips are immersed in a solution of palladium chloride, and palladium is formed as an electroless plating nucleus on the entire surface of the wafer. After being deposited, the Ni plated metal film 25 is formed to a thickness of about 1 μm by dipping in an electroless Ni plating solution. Next, as shown in FIGS. 6A and 6B, resists are formed in the internal electrodes 8 and 10 and the through holes 6 of the second and third semiconductor chips of the wafers 21 and 22 made of the second and third semiconductor chips. An etching pattern for removing the plated metal film 25 is formed by 26.

  Next, as shown in FIGS. 7A and 7B, the wafers 21 and 22 made of the second and third semiconductor chips in which the etching pattern is formed by the resist 26 are immersed in the etching solution 27 in the etching bath 28, and The plated metal film 25 is dissolved and etched. For example, when the plated metal film is Ni, the Ni film is dissolved with a 20% hydrochloric acid solution. Next, as shown in FIGS. 8A and 8B, the resist 26 formed on the wafers 21 and 22 made of the second and third semiconductor chips is dissolved and removed, and the second and third plating electrodes 13 and 14 are removed. Is formed. Next, as shown in FIGS. 9A and 9B, the wafers 21 and 22 made of the second and third semiconductor chips are diced and divided into individual chips.

  Next, as shown in FIG. 10, the internal electrode 4 and the external electrode 3 of the first semiconductor chip are blocked at the position where the second semiconductor chip 7 is mounted later on the semiconductor wafer 29 made of the first semiconductor chip 1. Apply an adhesive 5 such as epoxy, polyimide, acrylic or the like. Next, as shown in FIG. 11, the collet 30 is used so that the internal electrodes 4 and 8 are aligned with the region where the adhesive 5 of the wafer 29 made of the first semiconductor chip is applied to the second semiconductor chip 7. Install face-up with vacuum suction. Thereafter, the adhesive 5 is cured by heating through the collet 30, and the second semiconductor chip 7 is fixed on the wafer 29 made of the first semiconductor chip. The heating temperature is about 100 ° C to 300 ° C. The size of the internal electrodes 4, 8 is an electrode for connecting the second semiconductor chip 7 and the wafer 29 made of the first semiconductor chip, and may be small, and is about several μm □ to 100 μm □. At this time, the gap between the surfaces of the first semiconductor chip 1 and the second semiconductor chip 7 is several μm to 100 μm. Further, the adhesive 5 is prevented from flowing on the surfaces of the internal electrodes 4 and 8. By repeating this process, the plurality of second semiconductor chips 7 are fixed by the adhesive 5 on the wafer 29 made of the first semiconductor chips.

Further, as shown in FIG. 12, an adhesive 5 such as epoxy, polyimide, acrylic or the like is applied on the second semiconductor chip 7 so as not to block the internal electrode 8 at a position where the third semiconductor chip 9 is mounted later. Next, as shown in FIG. 13, the third semiconductor chip 9 is vacuum-adsorbed by the collet 30 so that the internal electrodes 8, 10 coincide with each other in the region where the adhesive 5 of the second semiconductor chip 7 is applied. Install in face-up condition. Thereafter, the adhesive 5 is cured by heating through the collet 30, and the third semiconductor chip 9 is fixed on the second semiconductor chip 7.

  Next, as shown in FIGS. 14A and 14B, by immersing the wafer 29 made of the first semiconductor chip in the electroless plating rod 24, the internal electrode 4 of the first semiconductor chip and the second, The plating metal deposited from the second and third plating electrodes 13 and 14 formed on the internal electrodes 8 and 10 of the third semiconductor chip is integrated to form the plating electrode 15. The internal electrode 4 of the first semiconductor chip 1 and the internal electrodes 8 and 10 of the second and third semiconductor chips 7 and 9 are electrically connected by the plating electrode 15. At this time, the electroless plating solution 23 enters the gap between the wafer 29 made of the first semiconductor chip and the second and third semiconductor chips 7 and 9 and the through hole 6. For example, when the internal electrode 4 of the first semiconductor chip is made of Al and the metal to be deposited by electroless plating performed later is Ni, first, the internal electrode 4 of the first semiconductor chip is immersed in a solution of nitric acid, phosphoric acid, etc. After removing the oxide film on the Al surface, the Al surface is replaced with zinc or the like. Further, by using the same electroless plating solution as the second and third plating electrodes 13 and 14 formed on the second and third semiconductor chips 7 and 9, the second and third plating electrodes 13 and 14 are formed on the second and third semiconductor chips 7 and 9. In this case, the electroless plating metal is deposited, and the internal electrodes 4, 8, and 10 of the first, second, and third semiconductor chips can be connected by the same plating metal. At this time, the reliability can be improved by further electroless plating of gold on the surface of the plated metal Ni, and the yield is very high when a bonding wire or the like is later bonded onto the external electrode 4. After being immersed and treated in each solution, the next treatment is performed after washing with a solution such as pure water. In this way, since bonding is not performed by solder bumps as in the past, but by metal deposited directly on the Al electrode by electroless plating, it is not necessary to form a metal that causes solder diffusion in advance on the Al electrode as in the past. At the same time, since all the chips can be bonded together in the wafer state, productivity is dramatically improved, and high-density connection can be realized at low cost.

  Next, as shown in FIG. 15, the wafer 29 made of the first semiconductor chips is diced and separated into the first semiconductor chips 1. Here, the first semiconductor chip 1, the second semiconductor chip 7, and the third semiconductor chip 9 are joined by probing the external electrode 3 of the first semiconductor chip before separation into the first semiconductor chip 1. The characteristic inspection can be performed in the state. Further, an insulating resin 33 is provided on the side portion.

  Next, as shown in FIGS. 1 and 2, the first semiconductor chip 1 to which the second and third semiconductor chips 7 and 9 are bonded is bonded to the die pad 18 of the lead frame to the die bond resin 16, and the first semiconductor chip 1 is bonded. The external electrode 3 and the lead 17 of the lead frame are connected by a bonding wire 19 and finally sealed with a sealing resin 20 for packaging. At this time, the sealing resin 20 is injected into the gap between the first semiconductor chip 1, the second semiconductor chip 7, and the third semiconductor chip 9 when the resin is injected into the mold. In addition, the resin injection into the gap between the first semiconductor chip 1, the second semiconductor chip 7, and the third semiconductor chip 9 is performed before sealing with the insulating resin 16 different from the sealing resin of the package. It doesn't matter. Further, the sealing resin may not be injected into the gap between the first semiconductor chip 1, the second semiconductor chip 7, and the third semiconductor chip 9. Also, in the semiconductor chip to be stacked, either the face-up or the face-down may be used as long as the positional relationship of the internal electrodes with respect to the first semiconductor chip is not a problem in terms of circuit.

  As described above, according to this embodiment, the through-hole 6 is provided in the internal electrodes 8 and 10 of the second and third semiconductor chips, and the first and second and third semiconductor chips 1, 7, and 9 are bonded. Since the inner electrodes 8 and 10 of the second and third semiconductor chips and the first metal 25 on the inner wall of the through hole and the inner electrode 4 of the first semiconductor chip are electrically connected by electroless plating, a large number of sheets are fixed. It is possible to stack the chips without damaging the chips. In addition, since the first metal 25 capable of electroless plating is formed on the inner wall of the through hole by electroless plating or vapor deposition, solder diffusion is not performed on the internal electrode of the chip in advance, instead of joining by solder bumps as in the prior art. The formation of the resulting metal is also unnecessary. As the first metal 25, for example, Cu, Ni, Au, Pt, Ag, Sn, Pb, Co or the like can be used. Further, since solder bumps do not spread, fine connection is facilitated, and application to a multi-pin LSI becomes possible. In addition, the LSIs on one side can be bonded to each other in the wafer state, so that the cost can be reduced.

  Further, the diameter of the through hole 6 in the internal electrode 8 of the second semiconductor chip may be smaller than ½ of the gap between the first semiconductor chip 1 and the second semiconductor chip 7. That is, in FIG. 2, a is the diameter of the through hole in the internal electrode of the second semiconductor chip, and b is the gap between the first semiconductor chip and the second semiconductor chip. When a> b / 2, before the through hole 6 is filled with the plating metal (plating electrode 15), it comes into contact with the plating metal (such as the plating electrode 13 of the second semiconductor chip) grown from the other electrode. The plating solution remains inside the hole 6. When a ≦ b / 2, the through hole 6 is filled with the plating metal before coming into contact with the plating metal grown from the other electrode. For this reason, it can connect reliably.

  Although the case where the second and third semiconductor chips are stacked is shown, two or more second semiconductor chips may be stacked. Further, the first semiconductor chip to which the second semiconductor chip is connected may be configured as a circuit board in addition to the wafer state.

  The method for manufacturing a semiconductor device according to the present invention has an effect that a large number of chips can be stacked without damaging the chips, and is useful for semiconductor manufacturing and the like.

It is sectional drawing of the semiconductor device of embodiment of this invention. It is a principal part enlarged view of FIG. (A) is process sectional drawing of the manufacturing method of the semiconductor device of embodiment of this invention, (b) is the principal part enlarged view. (A) is process sectional drawing of the next process of FIG. 3, (b) is the principal part enlarged view. (A) is process sectional drawing of the next process of FIG. 4, (b) is the principal part enlarged view. (A) is process sectional drawing of the next process of FIG. 5, (b) is the principal part enlarged view. (A) is process sectional drawing of the next process of FIG. 6, (b) is the principal part enlarged view. (A) is process sectional drawing of the next process of FIG. 7, (b) is the principal part enlarged view. (A) is process sectional drawing of the next process of FIG. 8, (b) is the principal part enlarged view. FIG. 10 is a process cross-sectional view of the next process in FIG. 9. It is process sectional drawing of the next process of FIG. FIG. 12 is a process cross-sectional view of the next process in FIG. 11. FIG. 13 is a process cross-sectional view of the next process in FIG. 12. (A) is process sectional drawing of the next process of FIG. 13, (b) is the principal part enlarged view. It is process sectional drawing of the next process of FIG. It is sectional drawing of the conventional semiconductor device. It is process sectional drawing of the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st semiconductor chip 2 Protective film of semiconductor chip 3 External electrode of 1st semiconductor chip 4 Internal electrode of 1st semiconductor chip 5 Adhesive 6 Through-hole 7 2nd semiconductor chip 8 Inside of 2nd semiconductor chip Electrode 9 Third chip 10 Internal electrode of third chip 11 Oxide film of second semiconductor chip 12 Oxide film of third semiconductor chip 13 Second plating electrode 14 Third plating electrode 15 Plating electrode 16 Die bond resin 17 Lead frame lead 18 Lead frame die pad 19 Bonding wire 20 Sealing resin 21 Wafer made of second semiconductor chip 22 Wafer made of third semiconductor chip 23 Electroless plating solution 24 Electroless plating bath 25 Plating metal film 26 Resist 27 Etching solution 28 Etching tank 29 First semiconductor chip wafer 30 Collet 31 Collet vacuum hole 32 Dicing groove 33 Insulating resin 34 Oxide film

Claims (4)

Providing a through hole penetrating the second semiconductor chip in an internal electrode of the second semiconductor chip stacked on the first semiconductor chip;
Forming an insulating film on the inner wall and the back surface of the through hole;
Forming a first metal on the inner wall of the through hole by electroless plating or vapor deposition;
The second semiconductor chip is connected to the external electrode of the first semiconductor chip with a gap with respect to the first semiconductor chip so that the internal electrodes of the first and second semiconductor chips correspond to each other. And a step of adhering and fixing to a portion excluding the internal electrode,
A method of manufacturing a semiconductor device, comprising: electrically connecting the internal electrode of the second semiconductor chip and the first metal of the inner wall of the through hole to the internal electrode of the first semiconductor chip by electroless plating. Providing a through hole penetrating the second semiconductor chip in an internal electrode of the second semiconductor chip stacked on the first semiconductor chip;
Forming an insulating film on the inner wall and the back surface of the through hole;
Forming a first metal on the inner wall of the through hole by electroless plating or vapor deposition;
The second semiconductor chip is connected to the external electrode of the first semiconductor chip with a gap with respect to the first semiconductor chip so that the internal electrodes of the first and second semiconductor chips correspond to each other. And a step of adhering and fixing to a portion excluding the internal electrode,
One or more second semiconductor chips are further arranged on the second semiconductor chip so that the internal electrodes of the lower and upper second semiconductor chips correspond to each other, and the second semiconductor chip is lower than the second semiconductor chip. Bonding and fixing the upper second semiconductor chip to a portion excluding the internal electrode of the lower second semiconductor chip in a state where the upper second semiconductor chip has a gap;
A method of manufacturing a semiconductor device, comprising: electrically connecting the internal electrode of the second semiconductor chip and the first metal of the inner wall of the through hole to the internal electrode of the first semiconductor chip by electroless plating.   3. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of forming Cu, Ni, Au, Pt, Ag, Sn, or the like as the first metal on the inner wall of the through hole.   In the step of electrically connecting the internal electrode of the second semiconductor chip and the first metal of the inner wall of the through hole to the internal electrode of the first semiconductor chip by electroless plating, Ni or Au is formed by electroless plating. 3. The method of manufacturing a semiconductor device according to claim 1, wherein plating is performed.

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