JPH04356956A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH04356956A
JPH04356956A JP13142591A JP13142591A JPH04356956A JP H04356956 A JPH04356956 A JP H04356956A JP 13142591 A JP13142591 A JP 13142591A JP 13142591 A JP13142591 A JP 13142591A JP H04356956 A JPH04356956 A JP H04356956A
Authority
JP
Japan
Prior art keywords
semiconductor device
layer
semiconductor substrate
capable
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13142591A
Other versions
JP2622038B2 (en
Inventor
Akio Goto
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP13142591A priority Critical patent/JP2622038B2/en
Publication of JPH04356956A publication Critical patent/JPH04356956A/en
Application granted granted Critical
Publication of JP2622038B2 publication Critical patent/JP2622038B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73257Bump and wire connectors

Abstract

PURPOSE: To provide a semiconductor device having input/output terminals for external connection capable of connecting a large number of devices each of which is composed of one semiconductor substrate and has an independent function, and capable of constituting a large scale device (system), and its manufacturing method as well.
CONSTITUTION: A semiconductor device which has an insulating layer 51 formed on the wall surface of a through hole bored in a specified position of a semiconductor substrate 1, an adhesive metal layer 6 built up on the layer 5, and a wiring metal plug 8 provided in the through hole protruding from the upper and lower sides.
COPYRIGHT: (C)1992,JPO&Japio
JP13142591A 1991-06-03 1991-06-03 Semiconductor device and manufacturing method thereof Expired - Fee Related JP2622038B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13142591A JP2622038B2 (en) 1991-06-03 1991-06-03 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13142591A JP2622038B2 (en) 1991-06-03 1991-06-03 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH04356956A true JPH04356956A (en) 1992-12-10
JP2622038B2 JP2622038B2 (en) 1997-06-18

Family

ID=15057664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13142591A Expired - Fee Related JP2622038B2 (en) 1991-06-03 1991-06-03 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2622038B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
WO2000036650A1 (en) * 1998-12-16 2000-06-22 Seiko Epson Corporation Semiconductor chip, semiconductor device, circuit board and electronic equipment and production methods for them
JP2000196014A (en) * 1998-12-25 2000-07-14 Texas Instr Japan Ltd Semiconductor chip and semiconductor device mounted with the semiconductor chip
EP1248295A2 (en) * 2001-04-06 2002-10-09 Shinko Electric Industries Co. Ltd. Semiconductor element, connection structure thereof, semiconductor device using a plurality of such elements and processes for making the same
JP2002353223A (en) * 2001-05-30 2002-12-06 Sony Corp Semiconductor device and its manufacturing method
JP2003503834A (en) * 1999-06-23 2003-01-28 ギーゼッケ ウント デフリエント ゲーエムベーハー Semiconductor memory chip module
JP2003086591A (en) * 2001-09-12 2003-03-20 Fujikura Ltd Method for manufacturing through electrode and the electrode
JP2006352171A (en) * 1998-12-16 2006-12-28 Seiko Epson Corp Methods of manufacturing semiconductor chip, semiconductor device, circuit board, and electronic equipment
JP2007520051A (en) * 2003-09-23 2007-07-19 マイクロン テクノロジー,インコーポレイテッドMicron Technology, Inc. Conductive components, processes and integration scheme for fabricating a semiconductor component comprising a penetrating via and conductive through wafer vias
JP2008028407A (en) * 1997-04-04 2008-02-07 Glenn J Leedy Information processing method
JP2009512215A (en) * 2005-10-13 2009-03-19 インテル・コーポレーション Integrated microchannels for 3d through silicon Architecture
US8395269B2 (en) 2005-12-02 2013-03-12 Renesas Electronics Corporation Method of stacking semiconductor chips including forming an interconnect member and a through electrode
JP2013084711A (en) * 2011-10-07 2013-05-09 Denso Corp Semiconductor device and manufacturing method of the same

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
JP2011181176A (en) * 1997-04-04 2011-09-15 Glenn J Leedy Information processing method and laminated integrated circuit memory
JP2008172254A (en) * 1997-04-04 2008-07-24 Glenn J Leedy Information processing method
JP2008166831A (en) * 1997-04-04 2008-07-17 Glenn J Leedy Method of processing information
JP2008166832A (en) * 1997-04-04 2008-07-17 Glenn J Leedy Information processing method
JP2008028407A (en) * 1997-04-04 2008-02-07 Glenn J Leedy Information processing method
US6424048B1 (en) 1998-12-16 2002-07-23 Seiko Epson Corporation Semiconductor chip, semiconductor device, circuit board and electronic equipment and production methods for them
US6677237B2 (en) 1998-12-16 2004-01-13 Seiko Epson Corporation Semiconductor chip, semiconductor device, circuit board and electronic equipment and production methods for them
JP4497147B2 (en) * 1998-12-16 2010-07-07 セイコーエプソン株式会社 Method of manufacturing a semiconductor chip, a semiconductor device manufacturing method, a manufacturing method of a manufacturing method and an electronic device of the circuit board
JP2006352171A (en) * 1998-12-16 2006-12-28 Seiko Epson Corp Methods of manufacturing semiconductor chip, semiconductor device, circuit board, and electronic equipment
WO2000036650A1 (en) * 1998-12-16 2000-06-22 Seiko Epson Corporation Semiconductor chip, semiconductor device, circuit board and electronic equipment and production methods for them
JP2000196014A (en) * 1998-12-25 2000-07-14 Texas Instr Japan Ltd Semiconductor chip and semiconductor device mounted with the semiconductor chip
JP2003503834A (en) * 1999-06-23 2003-01-28 ギーゼッケ ウント デフリエント ゲーエムベーハー Semiconductor memory chip module
EP1248295A3 (en) * 2001-04-06 2005-07-13 Shinko Electric Industries Co. Ltd. Semiconductor element, connection structure thereof, semiconductor device using a plurality of such elements and processes for making the same
EP1248295A2 (en) * 2001-04-06 2002-10-09 Shinko Electric Industries Co. Ltd. Semiconductor element, connection structure thereof, semiconductor device using a plurality of such elements and processes for making the same
JP2002353223A (en) * 2001-05-30 2002-12-06 Sony Corp Semiconductor device and its manufacturing method
JP2003086591A (en) * 2001-09-12 2003-03-20 Fujikura Ltd Method for manufacturing through electrode and the electrode
JP4717290B2 (en) * 2001-09-12 2011-07-06 株式会社フジクラ Method for producing a through electrode
JP2007520051A (en) * 2003-09-23 2007-07-19 マイクロン テクノロジー,インコーポレイテッドMicron Technology, Inc. Conductive components, processes and integration scheme for fabricating a semiconductor component comprising a penetrating via and conductive through wafer vias
US9287207B2 (en) 2003-09-23 2016-03-15 Micron Technology, Inc. Methods for forming conductive vias in semiconductor device components
JP2009512215A (en) * 2005-10-13 2009-03-19 インテル・コーポレーション Integrated microchannels for 3d through silicon Architecture
US8395269B2 (en) 2005-12-02 2013-03-12 Renesas Electronics Corporation Method of stacking semiconductor chips including forming an interconnect member and a through electrode
JP2013084711A (en) * 2011-10-07 2013-05-09 Denso Corp Semiconductor device and manufacturing method of the same

Also Published As

Publication number Publication date
JP2622038B2 (en) 1997-06-18

Similar Documents

Publication Publication Date Title
JPH0296362A (en) Semiconductor device and manufacture thereof
JPS59151443A (en) Semiconductor device
JPH04311058A (en) Semiconductor integrated circuit device wiring connection structure and manufacture thereof
SG42982A1 (en) Methods of forming an interconnect on a semiconductor substrate
JPH04345779A (en) Manufacture of electric connection element
JPH04355086A (en) Manufacture of electric connecting element
JPH02272737A (en) Projecting electrode structure of semiconductor and formation of projecting electrode
EP1041633A4 (en) Semiconductor device, method of manufacture thereof, circuit board, and electronic device
EP0304263A3 (en) Semiconductor chip assembly
EP0236123A3 (en) A semiconductor device and method for preparing the same
JPS5892230A (en) Semiconductor device
JPH022699A (en) High density hybrid integrated circuit
EP0381383A3 (en) Semiconductor device having insulating substrate adhered to conductive substrate
JPH04302472A (en) Semiconductor device and manufacture thereof
EP0177105A3 (en) Method for providing a semiconductor device with planarized contacts
JPH0329342A (en) Semiconductor device
JPH01109757A (en) Assembly of integrated circuit chip
WO2002023625A3 (en) Semiconductor device and fabrication method therefor
JPH04273451A (en) Semiconductor device
JPH04212409A (en) Forming method for semiconductor substrate
DE3276284D1 (en) Semiconductor integrated circuit comprising a semiconductor substrate and interconnecting layers
JPH021956A (en) Method of formation of insulating film
JPH04335555A (en) Package for semiconductor device
JPH04299842A (en) Designing method for semicustom semiconductor integrated circuit macrocell
JPS607149A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080404

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 12

Free format text: PAYMENT UNTIL: 20090404

LAPS Cancellation because of no payment of annual fees