JP4584658B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4584658B2 JP4584658B2 JP2004264871A JP2004264871A JP4584658B2 JP 4584658 B2 JP4584658 B2 JP 4584658B2 JP 2004264871 A JP2004264871 A JP 2004264871A JP 2004264871 A JP2004264871 A JP 2004264871A JP 4584658 B2 JP4584658 B2 JP 4584658B2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- transistor
- insulating film
- electrode
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 239000003990 capacitor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図1は、第1実施形態に係る半導体装置100の冗長用ヒューズ付近の平面図である。図6は、図1のV−Vにおける断面図である。
半導体装置100は、P型半導体基板1と、フィールド絶縁膜2と、ヒューズ4A〜4Cと、キャパシタ3と、絶縁膜5と、第1層配線膜9,10と、絶縁膜11及び保護膜12とを備えている。ここでは、ヒューズ4A及び4Bを例に挙げて説明する。
図3は、本実施形態の半導体装置におけるヒューズ、キャパシタ及び検出回路の接続関係を示す電気回路図である。図4は、図3においてヒューズが切断された状態の電気回路図である。
図4に示すように、ヒューズ4Aが切断、ヒューズ4Bが未切断の状態では、電源電位VccにCgdが接続され、CgdにCgs及びCoxが並列に接続されている。トランジスタTR1及びTR2のゲート端子には、並列接続されたCgs及びCoxの合成容量と、Cgdとで電源電位Vccを分圧した電圧が印加される。
2 フィールド絶縁膜
3 キャパシタ
4A〜4C ヒューズ
5,11 絶縁膜
6,7,8 開口部
9,10 第1層配線膜膜
12 保護膜
13 開口部
20 検出回路
100 半導体装置
Claims (4)
- 半導体基板と、
前記半導体基板表面に形成された第1絶縁膜と、
前記第1絶縁膜上に形成された第1ヒューズと、
前記第1ヒューズに電気的に接続された第1電極及び該第1電極に対向配置された第2電極を有するキャパシタと、
前記キャパシタの前記第2電極に電気的に接続された第1トランジスタと、
を備えた半導体装置。 - 前記第1ヒューズを覆うとともに、前記第1ヒューズを露出する第1開口部、及び前記第1電極を露出する第2開口部を有する第2絶縁膜と、
前記第1開口部及び前記第2開口部を介して前記第1ヒューズと前記第1電極とを電気的に接続する第1配線膜と、を更に備えた請求項1に記載の半導体装置。 - 前記第2絶縁膜は、前記第2電極を露出する第3開口部を更に有し、
前記第3開口部を介して前記第2電極と前記第1トランジスタとを電気的に接続する第2配線膜を更に備えた請求項2に記載の半導体装置。 - 前記キャパシタの前記第2電極に電気的に接続された第2トランジスタと、
前記第1絶縁膜上に形成されると共に前記第1電極に電気的に接続された第2ヒューズと、を更に備え、
前記第1トランジスタをP型トランジスタとし、前記第2トランジスタをN型トランジスタとして前記第1トランジスタ及び前記第2トランジスタによってインバータを構成し、
前記第1ヒューズを電源電位に、前記第2ヒューズを半導体基板電位に接続し、
前記第2ヒューズが切断されずに前記第1ヒューザが切断された場合、前記第1及び第2トランジスタの各ゲート端子が電源電位よりも基板電位に近くなり、前記第1ヒューザが切断されずに前記第2ヒューズが切断された場合、前記第1及び第2トランジスタの各ゲート端子が基板電位よりも電源電位に近くなるように前記キャパシタの容量を設定した請求項1〜請求項3の何れか1項に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004264871A JP4584658B2 (ja) | 2004-09-13 | 2004-09-13 | 半導体装置 |
US11/082,918 US7550817B2 (en) | 2004-09-13 | 2005-03-18 | Semiconductor device having fuse with protection capacitor |
US12/292,032 US7763952B2 (en) | 2004-09-13 | 2008-11-10 | Semiconductor device having fuse with protection capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004264871A JP4584658B2 (ja) | 2004-09-13 | 2004-09-13 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006080413A JP2006080413A (ja) | 2006-03-23 |
JP4584658B2 true JP4584658B2 (ja) | 2010-11-24 |
Family
ID=36033015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004264871A Expired - Fee Related JP4584658B2 (ja) | 2004-09-13 | 2004-09-13 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7550817B2 (ja) |
JP (1) | JP4584658B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4584658B2 (ja) * | 2004-09-13 | 2010-11-24 | Okiセミコンダクタ株式会社 | 半導体装置 |
JP4861060B2 (ja) * | 2006-06-01 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置および電気ヒューズの切断方法 |
JP2009021282A (ja) * | 2007-07-10 | 2009-01-29 | Elpida Memory Inc | 半導体装置 |
TWM424608U (en) * | 2011-11-04 | 2012-03-11 | Richtek Technology Corp | Fuse circuit for final test trimming of integrated circuit chip |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02220461A (ja) * | 1989-02-21 | 1990-09-03 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4837520A (en) * | 1985-03-29 | 1989-06-06 | Honeywell Inc. | Fuse status detection circuit |
US5675174A (en) * | 1993-01-06 | 1997-10-07 | Rohm Co., Ltd. | Method for using fuse structure in semiconductor device |
JP3907279B2 (ja) | 1997-08-26 | 2007-04-18 | 宮城沖電気株式会社 | 半導体装置の製造方法および検査方法 |
TW406394B (en) * | 1998-06-17 | 2000-09-21 | Nanya Plastics Corp | Ion-replulsion structure used in the fuse window |
JP2001052477A (ja) * | 1999-08-04 | 2001-02-23 | Nec Corp | 周期選択回路及びこの周期選択回路を用いた半導体記憶装置 |
JP3526853B2 (ja) | 2002-06-19 | 2004-05-17 | 沖電気工業株式会社 | 半導体装置の静電気破壊防止回路 |
JP4584658B2 (ja) * | 2004-09-13 | 2010-11-24 | Okiセミコンダクタ株式会社 | 半導体装置 |
-
2004
- 2004-09-13 JP JP2004264871A patent/JP4584658B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-18 US US11/082,918 patent/US7550817B2/en not_active Expired - Fee Related
-
2008
- 2008-11-10 US US12/292,032 patent/US7763952B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02220461A (ja) * | 1989-02-21 | 1990-09-03 | Mitsubishi Electric Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US7763952B2 (en) | 2010-07-27 |
US20060054993A1 (en) | 2006-03-16 |
US7550817B2 (en) | 2009-06-23 |
US20090079028A1 (en) | 2009-03-26 |
JP2006080413A (ja) | 2006-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7816761B2 (en) | Semiconductor device having fuse and protection circuit | |
US20030116806A1 (en) | Input protection circuit connected to protection circuit power source potential line | |
US7402888B2 (en) | Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit | |
EP1142119B1 (en) | On-chip decoupling capacitor system with parallel fuse | |
US7763952B2 (en) | Semiconductor device having fuse with protection capacitor | |
JP2007324423A (ja) | 半導体集積回路装置 | |
JP2002324842A (ja) | 半導体保護回路 | |
US20030043517A1 (en) | Electro-static discharge protecting circuit | |
US6580592B2 (en) | Semiconductor device | |
KR100371246B1 (ko) | 반도체장치의보호회로 | |
US7402887B2 (en) | Semiconductor device having fuse area surrounded by protection means | |
US7911751B2 (en) | Electrostatic discharge device with metal option ensuring a pin capacitance | |
JP2006019671A (ja) | 静電放電防護装置 | |
US6882014B2 (en) | Protection circuit for MOS components | |
US7205581B2 (en) | Thyristor structure and overvoltage protection configuration having the thyristor structure | |
US11296503B1 (en) | Electrostatic discharge protection circuits and semiconductor circuits | |
JP2006261154A (ja) | 半導体装置およびその設計方法 | |
KR100334969B1 (ko) | Esd 회로의 입/출력 패드 구조 | |
JP2023092171A (ja) | 半導体装置 | |
KR100290788B1 (ko) | 반도체 소자의 정전기 방지 구조 | |
JP2008047642A (ja) | 静電気放電保護半導体装置 | |
JPS61263264A (ja) | 半導体装置 | |
KR20020055935A (ko) | 정전기 방전 보호 회로 및 그 제조 방법 | |
JP2008091936A (ja) | 半導体装置 | |
JP2008277846A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20070216 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070206 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070607 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20081126 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20090204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100601 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100603 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100729 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100831 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100902 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130910 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees | ||
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |