JP4579367B2 - 走査露光装置及び走査露光方法 - Google Patents

走査露光装置及び走査露光方法 Download PDF

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Publication number
JP4579367B2
JP4579367B2 JP2000036209A JP2000036209A JP4579367B2 JP 4579367 B2 JP4579367 B2 JP 4579367B2 JP 2000036209 A JP2000036209 A JP 2000036209A JP 2000036209 A JP2000036209 A JP 2000036209A JP 4579367 B2 JP4579367 B2 JP 4579367B2
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Japan
Prior art keywords
exposure
stage
substrate stage
axis direction
scanning
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Expired - Fee Related
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JP2000036209A
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English (en)
Japanese (ja)
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JP2001230170A5 (enExample
JP2001230170A (ja
Inventor
徹 鈴木
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Canon Inc
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Canon Inc
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Priority to JP2000036209A priority Critical patent/JP4579367B2/ja
Publication of JP2001230170A publication Critical patent/JP2001230170A/ja
Publication of JP2001230170A5 publication Critical patent/JP2001230170A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2000036209A 2000-02-15 2000-02-15 走査露光装置及び走査露光方法 Expired - Fee Related JP4579367B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000036209A JP4579367B2 (ja) 2000-02-15 2000-02-15 走査露光装置及び走査露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000036209A JP4579367B2 (ja) 2000-02-15 2000-02-15 走査露光装置及び走査露光方法

Publications (3)

Publication Number Publication Date
JP2001230170A JP2001230170A (ja) 2001-08-24
JP2001230170A5 JP2001230170A5 (enExample) 2007-04-05
JP4579367B2 true JP4579367B2 (ja) 2010-11-10

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JP2000036209A Expired - Fee Related JP4579367B2 (ja) 2000-02-15 2000-02-15 走査露光装置及び走査露光方法

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JP (1) JP4579367B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220350259A1 (en) * 2021-04-30 2022-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100585108B1 (ko) 2003-11-14 2006-06-01 삼성전자주식회사 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법
JP5158464B2 (ja) * 2006-09-01 2013-03-06 株式会社ニコン 露光装置及び露光方法
NL1036668A1 (nl) 2008-03-20 2009-09-22 Asml Netherlands Bv Lithographic Apparatus and Device Manufacturing Method.
CN103092114A (zh) * 2013-01-22 2013-05-08 中国科学院光电技术研究所 一种用于光刻机的嵌入式控制设备及控制方法
CN105301917B (zh) * 2015-11-19 2017-12-08 清华大学 一种对永磁弹射掩模台往复扫描运动轨迹的规划方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3387581B2 (ja) * 1993-11-04 2003-03-17 キヤノン株式会社 露光装置及び該露光装置を用いてデバイスを製造する方法
JP3531297B2 (ja) * 1995-06-19 2004-05-24 株式会社ニコン 投影露光装置及び投影露光方法
JP3377153B2 (ja) * 1996-01-19 2003-02-17 キヤノン株式会社 Ｘｙステージの制御方法および装置
JPH09251955A (ja) * 1996-01-08 1997-09-22 Canon Inc 露光方法および装置、ならびにデバイス製造方法
JPH10261581A (ja) * 1997-03-17 1998-09-29 Nikon Corp 走査型露光装置
JPH10312955A (ja) * 1997-05-09 1998-11-24 Nikon Corp 走査露光方法及び走査型露光装置
JPH11233433A (ja) * 1998-02-17 1999-08-27 Nikon Corp 走査型露光装置及び走査露光方法並びにデバイス製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220350259A1 (en) * 2021-04-30 2022-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
US11809087B2 (en) * 2021-04-30 2023-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
US12298672B2 (en) 2021-04-30 2025-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation

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Publication number Publication date
JP2001230170A (ja) 2001-08-24

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