JP4576438B2 - 高調波発生素子の製造方法 - Google Patents
高調波発生素子の製造方法 Download PDFInfo
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- JP4576438B2 JP4576438B2 JP2008065715A JP2008065715A JP4576438B2 JP 4576438 B2 JP4576438 B2 JP 4576438B2 JP 2008065715 A JP2008065715 A JP 2008065715A JP 2008065715 A JP2008065715 A JP 2008065715A JP 4576438 B2 JP4576438 B2 JP 4576438B2
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- chip
- adhesive layer
- antireflection film
- wavelength conversion
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
- G02F1/3775—Non-linear optics for second-harmonic generation in an optical waveguide structure with a periodic structure, e.g. domain inversion, for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/066—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide channel; buried
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/38—Anti-reflection arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/20—LiNbO3, LiTaO3
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/1064—Partial cutting [e.g., grooving or incising]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1082—Partial cutting bonded sandwich [e.g., grooving or incising]
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Description
このチップを熱処理する熱処理工程、および
次いで光導波路の入射側端面および出射側端面にそれぞれ反射防止膜を形成する成膜工程
を有しており、熱処理工程後、成膜工程前において、少なくともリッジ溝内での上側接着層のチップ端面からの凹み量が100nm以上、1500nm以下であることを特徴とする、高調波発生素子の製造方法に係るものである。
図3〜図5を参照しつつ説明した方法に従い、素子1を作製した。
具体的には、厚さ0.5mmのMgO5%ドープニオブ酸リチウム5度オフカットY基板上に、周期6.6μmの櫛状周期電極をフォトリソグラフィ法によって形成した。パルス電圧を印加して周期分極反転構造を形成した。周期分極反転を形成した後、厚さ0.4μmのSiO2アンダークラッド4をスパッタ法によって成膜した。
実施例1と同様にしてチップ21(図2参照)を作製した。次いで、チップの端面を研磨し、この後に210℃で1時間熱処理した。端面の接着層のへこみ量t1をAFMで測定した結果、900nmであった。実施例1と同様にして光導波路端面に反射防止膜を施した後、端面からの接着層のへこみ量t2を測定した結果、910nmであった。
実施例1と同様にしてチップ21(図2参照)を作製した。そして、端面の接着層のへこみ量t1をAFMで測定した結果、20nmであった。次いで、実施例1と同様にして導波路端面に反射防止膜を施した。そして、端面からの接着層の凹み量t2を測定したところ、200nmであった。
実施例1と同様にしてチップ21(図2参照)を作製した。そして、端面の接着層のへこみ量t1をAFMで測定した結果、20nmであった。次いで、チップを端面研磨した後に、チップをアセトンの溶液に1時間浸漬させた。その後、端面の接着層のへこみ量t1をAFMで測定した結果、1700nmであった。
Claims (1)
- 支持基板、周期分極反転構造が設けられたリッジ型光導波路を備えている波長変換層、この波長変換層の底面と前記支持基板とを接着する有機樹脂製の下地接着層、前記波長変換層の上面側に設けられている上側基板、および前記波長変換層と前記上側基板とを接着する有機樹脂製の上側接着層を備えており、前記リッジ型光導波路の両側にそれぞれリッジ溝が形成されており、各リッジ溝内にそれぞれ前記上側接着層が充填されているチップを作製するチップ作製工程;
このチップを熱処理する熱処理工程、および
次いで前記光導波路の入射側端面および出射側端面にそれぞれ反射防止膜を形成する成膜工程
を有しており、前記熱処理工程後、前記成膜工程前において、少なくとも前記リッジ溝内での前記上側接着層の前記チップ端面からの凹み量が100nm以上、1500nm以下であることを特徴とする、高調波発生素子の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008065715A JP4576438B2 (ja) | 2008-03-14 | 2008-03-14 | 高調波発生素子の製造方法 |
US12/395,908 US7875146B2 (en) | 2008-03-14 | 2009-03-02 | Method of producing harmonics generating device |
DE102009001452.7A DE102009001452B4 (de) | 2008-03-14 | 2009-03-10 | Verfahren zum Erzeugen einer Oberschwingungen erzeugenden Vorrichtung |
CN2009101289130A CN101533201B (zh) | 2008-03-14 | 2009-03-13 | 高次谐波生成元件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008065715A JP4576438B2 (ja) | 2008-03-14 | 2008-03-14 | 高調波発生素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009222872A JP2009222872A (ja) | 2009-10-01 |
JP4576438B2 true JP4576438B2 (ja) | 2010-11-10 |
Family
ID=40953229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008065715A Active JP4576438B2 (ja) | 2008-03-14 | 2008-03-14 | 高調波発生素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7875146B2 (ja) |
JP (1) | JP4576438B2 (ja) |
CN (1) | CN101533201B (ja) |
DE (1) | DE102009001452B4 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8139216B2 (en) * | 2009-11-20 | 2012-03-20 | Corning Incorporated | Optical package alignment systems and protocols |
JP5992346B2 (ja) * | 2013-02-08 | 2016-09-14 | 日本碍子株式会社 | 波長変換素子の製造方法 |
JP6282632B2 (ja) * | 2013-03-15 | 2018-02-21 | 日本碍子株式会社 | しみ出し光発生素子およびしみ出し光発生デバイス |
JP6379090B2 (ja) * | 2013-06-11 | 2018-08-22 | 日本碍子株式会社 | 光実装デバイス |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000047277A (ja) * | 1998-05-27 | 2000-02-18 | Ngk Insulators Ltd | 第二高調波発生素子 |
JP2002501630A (ja) * | 1997-06-04 | 2002-01-15 | レインボウ フォトニクス アーゲー | リブ導波管及びそれを製造するプロセス |
JP2003139991A (ja) * | 2001-10-30 | 2003-05-14 | Kyocera Corp | レンズ部材およびこれを用いた光半導体素子収納用パッケージならびにその製造方法 |
JP2006330661A (ja) * | 2005-04-27 | 2006-12-07 | Mitsubishi Electric Corp | 光波長変換素子および光波長変換器 |
JP2008209451A (ja) * | 2007-02-23 | 2008-09-11 | Ngk Insulators Ltd | 波長変換素子 |
JP2009217133A (ja) * | 2008-03-12 | 2009-09-24 | Ngk Insulators Ltd | 高調波発生素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0166937B1 (ko) * | 1995-12-29 | 1999-02-01 | 구자홍 | 제2고조파 발생소자 |
DE69924423T2 (de) * | 1998-05-27 | 2006-03-09 | Ngk Insulators, Ltd., Nagoya | Vorrichtung zur Erzeugung der zweiten harmonischen Welle |
JP4450965B2 (ja) * | 2000-09-29 | 2010-04-14 | 日本碍子株式会社 | 光学部品の接着構造 |
US7295742B2 (en) * | 2002-05-31 | 2007-11-13 | Matsushita Electric Industrial Co., Ltd. | Optical element and method for producing the same |
EP1801625B1 (en) * | 2004-10-12 | 2019-11-20 | NGK Insulators, Ltd. | Optical waveguide substrate and harmonics generating device |
JP2009217009A (ja) * | 2008-03-11 | 2009-09-24 | Ngk Insulators Ltd | 高調波発生素子 |
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2008
- 2008-03-14 JP JP2008065715A patent/JP4576438B2/ja active Active
-
2009
- 2009-03-02 US US12/395,908 patent/US7875146B2/en active Active
- 2009-03-10 DE DE102009001452.7A patent/DE102009001452B4/de active Active
- 2009-03-13 CN CN2009101289130A patent/CN101533201B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002501630A (ja) * | 1997-06-04 | 2002-01-15 | レインボウ フォトニクス アーゲー | リブ導波管及びそれを製造するプロセス |
JP2000047277A (ja) * | 1998-05-27 | 2000-02-18 | Ngk Insulators Ltd | 第二高調波発生素子 |
JP2003139991A (ja) * | 2001-10-30 | 2003-05-14 | Kyocera Corp | レンズ部材およびこれを用いた光半導体素子収納用パッケージならびにその製造方法 |
JP2006330661A (ja) * | 2005-04-27 | 2006-12-07 | Mitsubishi Electric Corp | 光波長変換素子および光波長変換器 |
JP2008209451A (ja) * | 2007-02-23 | 2008-09-11 | Ngk Insulators Ltd | 波長変換素子 |
JP2009217133A (ja) * | 2008-03-12 | 2009-09-24 | Ngk Insulators Ltd | 高調波発生素子 |
Also Published As
Publication number | Publication date |
---|---|
US20090229740A1 (en) | 2009-09-17 |
DE102009001452A1 (de) | 2009-09-17 |
CN101533201B (zh) | 2013-08-07 |
US7875146B2 (en) | 2011-01-25 |
JP2009222872A (ja) | 2009-10-01 |
DE102009001452B4 (de) | 2014-11-27 |
CN101533201A (zh) | 2009-09-16 |
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