JP4574821B2 - 半導体装置及び薄膜 - Google Patents

半導体装置及び薄膜 Download PDF

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Publication number
JP4574821B2
JP4574821B2 JP2000278617A JP2000278617A JP4574821B2 JP 4574821 B2 JP4574821 B2 JP 4574821B2 JP 2000278617 A JP2000278617 A JP 2000278617A JP 2000278617 A JP2000278617 A JP 2000278617A JP 4574821 B2 JP4574821 B2 JP 4574821B2
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Japan
Prior art keywords
film
interlayer insulating
thin film
semiconductor device
wiring
Prior art date
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Expired - Fee Related
Application number
JP2000278617A
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English (en)
Japanese (ja)
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JP2001313335A (ja
JP2001313335A5 (https=
Inventor
隆 杉野
昌樹 楠原
優 梅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Watanabe Shoko KK
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Watanabe Shoko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Watanabe Shoko KK filed Critical Watanabe Shoko KK
Priority to JP2000278617A priority Critical patent/JP4574821B2/ja
Publication of JP2001313335A publication Critical patent/JP2001313335A/ja
Publication of JP2001313335A5 publication Critical patent/JP2001313335A5/ja
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Publication of JP4574821B2 publication Critical patent/JP4574821B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2000278617A 2000-02-25 2000-09-13 半導体装置及び薄膜 Expired - Fee Related JP4574821B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000278617A JP4574821B2 (ja) 2000-02-25 2000-09-13 半導体装置及び薄膜

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000049291 2000-02-25
JP2000-49291 2000-02-25
JP2000278617A JP4574821B2 (ja) 2000-02-25 2000-09-13 半導体装置及び薄膜

Publications (3)

Publication Number Publication Date
JP2001313335A JP2001313335A (ja) 2001-11-09
JP2001313335A5 JP2001313335A5 (https=) 2008-05-29
JP4574821B2 true JP4574821B2 (ja) 2010-11-04

Family

ID=26586100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000278617A Expired - Fee Related JP4574821B2 (ja) 2000-02-25 2000-09-13 半導体装置及び薄膜

Country Status (1)

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JP (1) JP4574821B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4497323B2 (ja) * 2006-03-29 2010-07-07 三菱電機株式会社 プラズマｃｖｄ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337637A (ja) * 1986-08-01 1988-02-18 Fujitsu Ltd 多層配線構造の半導体装置および製法
JPH0499049A (ja) * 1990-08-06 1992-03-31 Kawasaki Steel Corp 半導体装置
JP2001015595A (ja) * 1999-06-29 2001-01-19 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JP2001313335A (ja) 2001-11-09

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