JP4568710B2 - ガスシャワー - Google Patents
ガスシャワー Download PDFInfo
- Publication number
- JP4568710B2 JP4568710B2 JP2006279042A JP2006279042A JP4568710B2 JP 4568710 B2 JP4568710 B2 JP 4568710B2 JP 2006279042 A JP2006279042 A JP 2006279042A JP 2006279042 A JP2006279042 A JP 2006279042A JP 4568710 B2 JP4568710 B2 JP 4568710B2
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- Prior art keywords
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- gas shower
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- 238000009826 distribution Methods 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 52
- 239000004744 fabric Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000001154 acute effect Effects 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 238000009760 electrical discharge machining Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 270
- 230000005855 radiation Effects 0.000 description 35
- 238000000059 patterning Methods 0.000 description 23
- 239000010410 layer Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 210000003128 head Anatomy 0.000 description 3
- 238000009828 non-uniform distribution Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
Landscapes
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
放射ビームB(例えば、紫外線或いは別のタイプの放射)を調整するように構成された照明システム(イルミネータ)ILと、
パターニングデバイス(例えば、マスク)MAを支持する様に作られ、パターニングデバイスを一定のパラメータに従って正確に位置決めするように構成された第1位置決め装置PMに結合された支持構造(例えば、マスクテーブル)MTと、
基板(例えばレジストで被覆されたウェーハ)Wを保持するように作られて、基板を一定のパラメータに従って正確に位置決めするように構成された第2位置決め装置PWに結合された基板テーブル(例えば、ウェーハテーブル)WTと、
パターニングデバイスMAによって放射ビームBに付与されたパターンを基板Wのターゲット部分C(例えば、1つ以上のダイを含む)上に投射するように構成されている投影システム(例えば、屈折投影レンズ系)PSと、
を含む。
Claims (13)
- 光学装置において少なくとも1つの干渉計ビームの光路を調整するガスシャワーであって、
前記ガスシャワーは、前記光路にガスを供給するガス出口側を有するガス散布チャンバを含み、
前記ガス散布チャンバは、前記ガスを前記光路に散布するように構成されており、
前記ガス散布チャンバは、実質的に尖った先細の先端を含み、
前記ガス散布チャンバは、前記ガス出口側と対向して広がる第2の側を含み、
前記第2の側は、前記ガス出口側と実質的に平行に広がる第1部分と、前記ガス出口側と鋭角をなして前記尖った先細の先端を提供する第2部分と、を含み、
前記第2の側および前記ガス出口側は共に実質的に長方形であり、
前記尖った先細の先端は、前記光学装置の投影システムの中心軸に向かって、かつ、前記投影システムと前記干渉計ビームにより測定される基板サポートとの間に前記先端が位置するように、先細りに尖っており、
前記ガス出口側は複数の通路を有するシートを含み、
前記複数の前記通路は前記投影システムの中心軸に向かってガス流を生じさせるように 前記干渉計ビームの前記光路に対して斜めにかつ実質的に平行に延びる、
ガスシャワー。 - 前記ガスシャワーは、前記ガス出口側と実質的に平行に前記ガス散布チャンバの前記第2の側の方へガスを供給するように構成され、
前記ガス散布チャンバの前記第2の側は、入ってきたガスを前記ガス出口側の方へ逸らせて前記ガスを前記ガス散布チャンバから分散させるようになっている、
請求項1に記載のガスシャワー。 - 前記先端のテーパー角は約20°より小さい、請求項1に記載のガスシャワー。
- 前記先端のテーパー角は約10°より小さい、請求項1に記載のガスシャワー。
- 前記ガスシャワーは、使用中にリソグラフィ装置の少なくとも1つの前記干渉計ビームの前記光路に光学的調整を加えるように構成されている、
請求項1に記載のガスシャワー。 - 前記シートは、モノフィラメントファブリックを備えている、
請求項1に記載のガスシャワー。 - 前記シートは、複数のレーザ穿孔された通路、エッチングされた通路、及び/又は放電加工により若しくはマスク上デポジション金属により製造された通路を有する薄い金属又は合金のシートを含む、
請求項1に記載のガスシャワー。 - 前記複数の前記通路の直径には変化がある、請求項1に記載のガスシャワー。
- 前記複数の前記通路は、前記シートに沿って見たとき、不均一に分布している、請求項1に記載のガスシャワー。
- 前記シートは金属又は合金のシートである、請求項1に記載のガスシャワー。
- 前記複数の前記通路は前記シートに一様に分布している、請求項1に記載のガスシャワー。
- 前記複数の前記通路が、前記尖った先細の先端から横に広がる領域に向けられている、請求項1に記載のガスシャワー。
- 前記ガス散布チャンバは、少なくとも第1の先細セクションと前記第1の先細セクションから延びる第2の先細セクションとを含み、
前記第1及び第2の先細セクションは、互いに並んで広がる夫々のガス出口側を有し、
前記第1及び第2の先細セクションは、前記の夫々の出口側に対向して広がる夫々の第2の側を有し、隣り合う前記先細セクションの前記第2の側は、互いに180°より小さい角度をなす、
請求項1に記載のガスシャワー。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/255,195 US7432513B2 (en) | 2005-10-21 | 2005-10-21 | Gas shower, lithographic apparatus and use of a gas shower |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007158305A JP2007158305A (ja) | 2007-06-21 |
JP4568710B2 true JP4568710B2 (ja) | 2010-10-27 |
Family
ID=37510121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006279042A Active JP4568710B2 (ja) | 2005-10-21 | 2006-10-12 | ガスシャワー |
Country Status (7)
Country | Link |
---|---|
US (1) | US7432513B2 (ja) |
EP (1) | EP1777590B1 (ja) |
JP (1) | JP4568710B2 (ja) |
KR (1) | KR100797085B1 (ja) |
CN (1) | CN1952786B (ja) |
SG (1) | SG131897A1 (ja) |
TW (1) | TWI371660B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008151542A (ja) * | 2006-12-14 | 2008-07-03 | Canon Inc | ステージ装置、制御システム、露光装置及びデバイス製造方法 |
ITBO20070504A1 (it) * | 2007-07-20 | 2009-01-21 | Marposs Spa | Apparecchiatura e metodo per il controllo dello spessore di un elemento in lavorazione |
JP5984413B2 (ja) * | 2012-02-06 | 2016-09-06 | キヤノン株式会社 | 露光装置、ステージ装置およびデバイス製造方法 |
US9453801B2 (en) | 2012-05-25 | 2016-09-27 | Kla-Tencor Corporation | Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems |
US9662688B2 (en) | 2012-07-09 | 2017-05-30 | Kla-Tencor Corporation | Apparatus and method for cross-flow purge for optical components in a chamber |
JP6132917B2 (ja) * | 2012-09-18 | 2017-05-24 | エーエスエムエル ネザーランズ ビー.ブイ. | ステージシステム、ステージシステムを備えるリソグラフィ装置 |
WO2016107714A1 (en) * | 2014-12-31 | 2016-07-07 | Asml Holding N.V. | Reticle cooling by non-uniform gas flow |
NL2017344A (en) | 2015-10-01 | 2017-04-11 | Asml Netherlands Bv | A lithography apparatus, a method of manufacturing a device and a control program |
US10483092B2 (en) * | 2016-04-13 | 2019-11-19 | Lam Research Corporation | Baffle plate and showerhead assemblies and corresponding manufacturing method |
US10821664B2 (en) * | 2017-08-09 | 2020-11-03 | General Electric Company | Nozzle for additive manufacturing machine |
CN108257906B (zh) * | 2018-01-16 | 2021-05-04 | 京东方科技集团股份有限公司 | 吹气装置、吸附机台和柔性基板承载系统 |
CN111801624A (zh) * | 2018-04-17 | 2020-10-20 | 应用材料公司 | 将表面纹理化而不使用喷砂 |
CN110658682B (zh) * | 2018-06-28 | 2021-04-02 | 上海微电子装备(集团)股份有限公司 | 气浴腔结构、气浴装置及光刻设备 |
WO2020182540A1 (en) * | 2019-03-14 | 2020-09-17 | Asml Netherlands B.V. | Providing substantially laminar fluid flow in a lithographic apparatus |
EP4414784A1 (en) * | 2023-02-10 | 2024-08-14 | ASML Netherlands B.V. | Fluid nozzle for a patterning device environment of a lithographic apparatus |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04316312A (ja) * | 1991-02-07 | 1992-11-06 | Asm Lithography Bv | 結像方法及び装置並びに物体を正確に変位及び位置決めする装置 |
JPH05126522A (ja) * | 1991-11-01 | 1993-05-21 | Nikon Corp | 測長装置 |
JPH05283313A (ja) * | 1992-04-01 | 1993-10-29 | Nikon Corp | ステージの位置計測装置 |
JPH0653112A (ja) * | 1992-07-30 | 1994-02-25 | Nikon Corp | ステージの位置計測装置 |
JPH1082610A (ja) * | 1997-03-24 | 1998-03-31 | Nikon Corp | 露光装置 |
WO2002101804A1 (fr) * | 2001-06-11 | 2002-12-19 | Nikon Corporation | Dispositif d'exposition, procede de fabrication et element de passage de flux de stabilisation de temperature |
JP2005043021A (ja) * | 2003-07-25 | 2005-02-17 | Nikon Corp | 空調装置、位置計測装置、及び露光装置 |
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JP2000036453A (ja) | 1998-07-17 | 2000-02-02 | Canon Inc | 露光装置およびデバイス製造方法 |
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EP1510867A1 (en) * | 2003-08-29 | 2005-03-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050221618A1 (en) * | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
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-
2005
- 2005-10-21 US US11/255,195 patent/US7432513B2/en not_active Expired - Fee Related
-
2006
- 2006-10-12 JP JP2006279042A patent/JP4568710B2/ja active Active
- 2006-10-12 TW TW095137470A patent/TWI371660B/zh active
- 2006-10-19 SG SG200607325-8A patent/SG131897A1/en unknown
- 2006-10-20 CN CN2006101356752A patent/CN1952786B/zh active Active
- 2006-10-20 EP EP06076909A patent/EP1777590B1/en not_active Ceased
- 2006-10-20 KR KR1020060102399A patent/KR100797085B1/ko not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04316312A (ja) * | 1991-02-07 | 1992-11-06 | Asm Lithography Bv | 結像方法及び装置並びに物体を正確に変位及び位置決めする装置 |
JPH05126522A (ja) * | 1991-11-01 | 1993-05-21 | Nikon Corp | 測長装置 |
JPH05283313A (ja) * | 1992-04-01 | 1993-10-29 | Nikon Corp | ステージの位置計測装置 |
JPH0653112A (ja) * | 1992-07-30 | 1994-02-25 | Nikon Corp | ステージの位置計測装置 |
JPH1082610A (ja) * | 1997-03-24 | 1998-03-31 | Nikon Corp | 露光装置 |
WO2002101804A1 (fr) * | 2001-06-11 | 2002-12-19 | Nikon Corporation | Dispositif d'exposition, procede de fabrication et element de passage de flux de stabilisation de temperature |
JP2005043021A (ja) * | 2003-07-25 | 2005-02-17 | Nikon Corp | 空調装置、位置計測装置、及び露光装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI371660B (en) | 2012-09-01 |
CN1952786A (zh) | 2007-04-25 |
US7432513B2 (en) | 2008-10-07 |
EP1777590A2 (en) | 2007-04-25 |
EP1777590B1 (en) | 2012-12-05 |
TW200717194A (en) | 2007-05-01 |
US20070090301A1 (en) | 2007-04-26 |
SG131897A1 (en) | 2007-05-28 |
JP2007158305A (ja) | 2007-06-21 |
KR20070043676A (ko) | 2007-04-25 |
CN1952786B (zh) | 2012-02-29 |
EP1777590A3 (en) | 2008-02-13 |
KR100797085B1 (ko) | 2008-01-22 |
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