JP4563976B2 - クリスタルセンサ及びそれを備えた有機発光素子の蒸着装置 - Google Patents
クリスタルセンサ及びそれを備えた有機発光素子の蒸着装置 Download PDFInfo
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- JP4563976B2 JP4563976B2 JP2006234213A JP2006234213A JP4563976B2 JP 4563976 B2 JP4563976 B2 JP 4563976B2 JP 2006234213 A JP2006234213 A JP 2006234213A JP 2006234213 A JP2006234213 A JP 2006234213A JP 4563976 B2 JP4563976 B2 JP 4563976B2
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- 230000008021 deposition Effects 0.000 title claims description 37
- 239000013078 crystal Substances 0.000 claims description 63
- 238000007740 vapor deposition Methods 0.000 claims description 49
- 238000001816 cooling Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000498 cooling water Substances 0.000 claims description 7
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 32
- 238000000151 deposition Methods 0.000 description 28
- 239000010408 film Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 230000035939 shock Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 230000008016 vaporization Effects 0.000 description 5
- 230000003685 thermal hair damage Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
400 加熱容器
545 冷却コイルライン
200 ステージ
500 クリスタルセンサ
300 蒸着容器
510 センサ部
520 センサ回転モータ
540 カバー
Claims (12)
- チャンバと、
前記チャンバ内部の一領域に装着されているステージと、
前記ステージ上に備えられ、その内部に基板に蒸着する蒸着材料を保管する蒸着容器と、
前記ステージ上に位置して前記蒸着容器を加熱する加熱装置と、
前記蒸着材料が蒸着される位置に備えられるクリスタルセンサを含み、
前記クリスタルセンサは、
冷却コイルラインを備えるカバーと、
前記カバーの内部に位置するセンサ回転モータと、
前記カバーの内部に位置し、前記センサ回転モータと接続されるセンサ部と
を含み、
前記センサ部は、複数のサブセンサを含み、
前記カバーには、前記複数のサブセンサに対応する開口部が形成されることを特徴とする有機発光素子の蒸着装置。 - 前記カバーの内側面に、前記センサ部の少なくとも一領域を覆うように前記冷却コイルラインが装着されたことを特徴とする請求項1に記載の有機発光素子の蒸着装置。
- 前記冷却コイルラインの内部を介して冷却水が流れることを特徴とする請求項2に記載の有機発光素子の蒸着装置。
- 前記複数のサブセンサは、前記センサ回転モータと接続される体部により固定される請求項1に記載の有機発光素子の蒸着装置。
- 前記クリスタルセンサと接続され、前記クリスタルセンサの動作を調節する制御部を更に含むことを特徴とする請求項1に記載の有機発光素子の蒸着装置。
- 前記チャンバの内部に前記基板を支持する基板ホルダを更に備えることを特徴とする請求項1に記載の有機発光素子の蒸着装置。
- 前記蒸着材料は、有機化合物であることを特徴とする請求項1に記載の有機発光素子の蒸着装置。
- 前記チャンバは、真空チャンバであることを特徴とする請求項1に記載の有機発光素子の蒸着装置。
- 冷却コイルラインが備えられるカバーと、
前記カバーの内部に位置するセンサ回転モータと、
前記カバーの内部に位置し、前記センサ回転モータと接続されるセンサ部と
を含み、
前記センサ部は、複数のサブセンサを含み、
前記カバーには、前記複数のサブセンサに対応する開口部が形成されることを特徴とするクリスタルセンサ。 - 前記カバーの内側面に、前記センサ部の少なくとも一領域を覆うように前記冷却コイルラインが形成されることを特徴とする請求項9に記載のクリスタルセンサ。
- 前記冷却コイルラインの内部を介して冷却水が流れることを特徴とする請求項10に記
載のクリスタルセンサ。 - 前記複数のサブセンサは、前記モータ駆動部と接続される体部により固定されることを特徴とする請求項9に記載のクリスタルセンサ。
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KR1020060042318A KR100762701B1 (ko) | 2006-05-11 | 2006-05-11 | 크리스탈 센서 및 이를 구비한 유기 발광소자 증착장치. |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007305561A JP2007305561A (ja) | 2007-11-22 |
JP4563976B2 true JP4563976B2 (ja) | 2010-10-20 |
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JP2006234213A Active JP4563976B2 (ja) | 2006-05-11 | 2006-08-30 | クリスタルセンサ及びそれを備えた有機発光素子の蒸着装置 |
Country Status (2)
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JP (1) | JP4563976B2 (ja) |
KR (1) | KR100762701B1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101593682B1 (ko) | 2014-07-18 | 2016-02-26 | 주식회사 선익시스템 | 증착두께 측정장치 |
KR20230099458A (ko) | 2021-12-27 | 2023-07-04 | 주식회사 선익시스템 | 유기발광다이오드 증착장비의 사용방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03153872A (ja) * | 1989-11-02 | 1991-07-01 | Leybold Inficon Inc | 蒸着膜厚モニター用多極結晶ヘッド |
JPH04355096A (ja) * | 1991-05-31 | 1992-12-09 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンスデバイス |
JP2002373782A (ja) * | 2001-04-20 | 2002-12-26 | Eastman Kodak Co | 有機層を蒸着するための方法及び装置 |
JP2003139505A (ja) * | 2001-11-05 | 2003-05-14 | Ulvac Japan Ltd | 水晶発振式膜厚モニタ用センサヘッド及びこれを用いた膜厚のモニタ方法。 |
JP2005325391A (ja) * | 2004-05-13 | 2005-11-24 | Ulvac Japan Ltd | 有機薄膜の成膜装置 |
JP2006193811A (ja) * | 2005-01-17 | 2006-07-27 | Tohoku Pioneer Corp | 膜厚モニタ装置、成膜装置、成膜方法、自発光素子の製造方法 |
Family Cites Families (3)
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KR100685403B1 (ko) * | 2004-10-05 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계발광소자의 제조 방법 |
KR100570981B1 (ko) | 2004-11-26 | 2006-04-13 | 삼성에스디아이 주식회사 | 진공 증착기 및 진공 증착방법 |
KR20060064794A (ko) * | 2004-12-09 | 2006-06-14 | 엘지전자 주식회사 | 석영 크리스털 센서 |
-
2006
- 2006-05-11 KR KR1020060042318A patent/KR100762701B1/ko active IP Right Grant
- 2006-08-30 JP JP2006234213A patent/JP4563976B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03153872A (ja) * | 1989-11-02 | 1991-07-01 | Leybold Inficon Inc | 蒸着膜厚モニター用多極結晶ヘッド |
JPH04355096A (ja) * | 1991-05-31 | 1992-12-09 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンスデバイス |
JP2002373782A (ja) * | 2001-04-20 | 2002-12-26 | Eastman Kodak Co | 有機層を蒸着するための方法及び装置 |
JP2003139505A (ja) * | 2001-11-05 | 2003-05-14 | Ulvac Japan Ltd | 水晶発振式膜厚モニタ用センサヘッド及びこれを用いた膜厚のモニタ方法。 |
JP2005325391A (ja) * | 2004-05-13 | 2005-11-24 | Ulvac Japan Ltd | 有機薄膜の成膜装置 |
JP2006193811A (ja) * | 2005-01-17 | 2006-07-27 | Tohoku Pioneer Corp | 膜厚モニタ装置、成膜装置、成膜方法、自発光素子の製造方法 |
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KR100762701B1 (ko) | 2007-10-01 |
JP2007305561A (ja) | 2007-11-22 |
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