JP4558431B2 - 半導体製造装置のクリーニング方法 - Google Patents

半導体製造装置のクリーニング方法 Download PDF

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Publication number
JP4558431B2
JP4558431B2 JP2004287250A JP2004287250A JP4558431B2 JP 4558431 B2 JP4558431 B2 JP 4558431B2 JP 2004287250 A JP2004287250 A JP 2004287250A JP 2004287250 A JP2004287250 A JP 2004287250A JP 4558431 B2 JP4558431 B2 JP 4558431B2
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cleaning
plasma
wafer
chamber
cleaning method
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JP2006100705A5 (enExample
JP2006100705A (ja
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昭人 河内
剛 斉藤
裕昭 石村
益法 石原
直広 山本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2004287250A 2004-09-30 2004-09-30 半導体製造装置のクリーニング方法 Expired - Fee Related JP4558431B2 (ja)

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JP2004287250A JP4558431B2 (ja) 2004-09-30 2004-09-30 半導体製造装置のクリーニング方法

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JP2004287250A JP4558431B2 (ja) 2004-09-30 2004-09-30 半導体製造装置のクリーニング方法

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JP2006100705A JP2006100705A (ja) 2006-04-13
JP2006100705A5 JP2006100705A5 (enExample) 2007-05-17
JP4558431B2 true JP4558431B2 (ja) 2010-10-06

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009124128A (ja) * 2007-10-26 2009-06-04 Shin Etsu Chem Co Ltd ウエハ
US8138060B2 (en) 2007-10-26 2012-03-20 Shin-Etsu Chemical Co., Ltd. Wafer
CN102822115B (zh) * 2010-03-30 2017-06-27 日本碍子株式会社 半导体制造装置用耐腐蚀性构件及其制法
CN102822116B (zh) 2010-03-30 2016-01-27 日本碍子株式会社 半导体制造装置用耐腐蚀性构件及其制法
JP5698043B2 (ja) * 2010-08-04 2015-04-08 株式会社ニューフレアテクノロジー 半導体製造装置
JP5731881B2 (ja) * 2011-04-12 2015-06-10 株式会社日立ハイテクノロジーズ プラズマ処理装置及びその運転方法
JP5755390B1 (ja) 2014-01-06 2015-07-29 日本碍子株式会社 ハンドル基板および半導体用複合ウエハー
US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
WO2020081303A1 (en) 2018-10-19 2020-04-23 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
TW202307954A (zh) * 2021-05-25 2023-02-16 日商東京威力科創股份有限公司 清潔方法及電漿處理方法
JP7780351B2 (ja) * 2022-02-07 2025-12-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2501180B2 (ja) * 1994-11-07 1996-05-29 株式会社日立製作所 プラズマ処理装置のクリ―ニング方法
JP4601160B2 (ja) * 2000-12-26 2010-12-22 京セラ株式会社 耐食性部材
JP2002255647A (ja) * 2001-02-27 2002-09-11 Nihon Ceratec Co Ltd 酸化イットリウム焼結体およびウエハ保持具
JP3657942B2 (ja) * 2003-01-16 2005-06-08 沖電気工業株式会社 半導体製造装置の洗浄方法、及び半導体装置の製造方法

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