JP2006100705A5 - - Google Patents
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- Publication number
- JP2006100705A5 JP2006100705A5 JP2004287250A JP2004287250A JP2006100705A5 JP 2006100705 A5 JP2006100705 A5 JP 2006100705A5 JP 2004287250 A JP2004287250 A JP 2004287250A JP 2004287250 A JP2004287250 A JP 2004287250A JP 2006100705 A5 JP2006100705 A5 JP 2006100705A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing apparatus
- semiconductor manufacturing
- plasma
- cleaning
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004140 cleaning Methods 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 6
- 238000001514 detection method Methods 0.000 claims 5
- 230000003287 optical effect Effects 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims 3
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims 3
- 229940075624 ytterbium oxide Drugs 0.000 claims 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004287250A JP4558431B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体製造装置のクリーニング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004287250A JP4558431B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体製造装置のクリーニング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006100705A JP2006100705A (ja) | 2006-04-13 |
| JP2006100705A5 true JP2006100705A5 (enExample) | 2007-05-17 |
| JP4558431B2 JP4558431B2 (ja) | 2010-10-06 |
Family
ID=36240193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004287250A Expired - Fee Related JP4558431B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体製造装置のクリーニング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4558431B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009124128A (ja) * | 2007-10-26 | 2009-06-04 | Shin Etsu Chem Co Ltd | ウエハ |
| US8138060B2 (en) | 2007-10-26 | 2012-03-20 | Shin-Etsu Chemical Co., Ltd. | Wafer |
| CN102822115B (zh) * | 2010-03-30 | 2017-06-27 | 日本碍子株式会社 | 半导体制造装置用耐腐蚀性构件及其制法 |
| CN102822116B (zh) | 2010-03-30 | 2016-01-27 | 日本碍子株式会社 | 半导体制造装置用耐腐蚀性构件及其制法 |
| JP5698043B2 (ja) * | 2010-08-04 | 2015-04-08 | 株式会社ニューフレアテクノロジー | 半導体製造装置 |
| JP5731881B2 (ja) * | 2011-04-12 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びその運転方法 |
| JP5755390B1 (ja) | 2014-01-06 | 2015-07-29 | 日本碍子株式会社 | ハンドル基板および半導体用複合ウエハー |
| US10023956B2 (en) * | 2015-04-09 | 2018-07-17 | Lam Research Corporation | Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems |
| US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| WO2020081303A1 (en) | 2018-10-19 | 2020-04-23 | Lam Research Corporation | In situ protective coating of chamber components for semiconductor processing |
| TW202307954A (zh) * | 2021-05-25 | 2023-02-16 | 日商東京威力科創股份有限公司 | 清潔方法及電漿處理方法 |
| JP7780351B2 (ja) * | 2022-02-07 | 2025-12-04 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2501180B2 (ja) * | 1994-11-07 | 1996-05-29 | 株式会社日立製作所 | プラズマ処理装置のクリ―ニング方法 |
| JP4601160B2 (ja) * | 2000-12-26 | 2010-12-22 | 京セラ株式会社 | 耐食性部材 |
| JP2002255647A (ja) * | 2001-02-27 | 2002-09-11 | Nihon Ceratec Co Ltd | 酸化イットリウム焼結体およびウエハ保持具 |
| JP3657942B2 (ja) * | 2003-01-16 | 2005-06-08 | 沖電気工業株式会社 | 半導体製造装置の洗浄方法、及び半導体装置の製造方法 |
-
2004
- 2004-09-30 JP JP2004287250A patent/JP4558431B2/ja not_active Expired - Fee Related
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