JP4549022B2 - ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 - Google Patents

ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 Download PDF

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Publication number
JP4549022B2
JP4549022B2 JP2002586683A JP2002586683A JP4549022B2 JP 4549022 B2 JP4549022 B2 JP 4549022B2 JP 2002586683 A JP2002586683 A JP 2002586683A JP 2002586683 A JP2002586683 A JP 2002586683A JP 4549022 B2 JP4549022 B2 JP 4549022B2
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temperature
heater
workpiece
support according
layer
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JP2004533718A (ja
JP2004533718A5 (enExample
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ネイル ベンジャミン
ロバート スティーガー
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ラム リサーチ コーポレイション
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2002586683A 2001-04-30 2002-04-23 ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 Expired - Lifetime JP4549022B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US84643201A 2001-04-30 2001-04-30
US10/062,395 US6847014B1 (en) 2001-04-30 2002-02-01 Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
PCT/US2002/012864 WO2002089531A1 (en) 2001-04-30 2002-04-23 Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009136934A Division JP5388704B2 (ja) 2001-04-30 2009-06-08 ワーク支持体の表面を横切る空間温度分布を制御する方法および装置

Publications (3)

Publication Number Publication Date
JP2004533718A JP2004533718A (ja) 2004-11-04
JP2004533718A5 JP2004533718A5 (enExample) 2005-12-22
JP4549022B2 true JP4549022B2 (ja) 2010-09-22

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JP2002586683A Expired - Lifetime JP4549022B2 (ja) 2001-04-30 2002-04-23 ワーク支持体の表面を横切る空間温度分布を制御する方法および装置

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Country Link
US (3) US8536494B2 (enExample)
EP (1) EP1391140B1 (enExample)
JP (1) JP4549022B2 (enExample)
CN (1) CN100401852C (enExample)
TW (1) TWI267160B (enExample)
WO (1) WO2002089531A1 (enExample)

Families Citing this family (159)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
US7347901B2 (en) * 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
WO2004095531A2 (en) 2003-03-28 2004-11-04 Tokyo Electron Ltd Method and system for temperature control of a substrate
US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
JP4686996B2 (ja) * 2004-03-30 2011-05-25 住友電気工業株式会社 加熱装置
US7731798B2 (en) * 2004-12-01 2010-06-08 Ultratech, Inc. Heated chuck for laser thermal processing
US8038796B2 (en) 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
JP4672597B2 (ja) * 2005-06-02 2011-04-20 日本碍子株式会社 基板処理装置
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
US7956310B2 (en) * 2005-09-30 2011-06-07 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7838800B2 (en) 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
JP5414172B2 (ja) 2007-12-05 2014-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP5171584B2 (ja) * 2008-03-26 2013-03-27 株式会社日立国際電気 基板処理装置の基板載置台、基板処理装置及び半導体デバイスの製造方法
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP5193886B2 (ja) * 2009-01-14 2013-05-08 株式会社巴川製紙所 静電チャック装置の補修方法および補修装置、ならびに静電チャック装置
KR101691044B1 (ko) * 2009-02-04 2016-12-29 맷슨 테크놀로지, 인크. 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
CN105428295B (zh) * 2009-12-15 2020-08-11 朗姆研究公司 调节基板温度来改进关键尺寸（cd）的均匀性
US9034142B2 (en) * 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
JP5423632B2 (ja) * 2010-01-29 2014-02-19 住友大阪セメント株式会社 静電チャック装置
EP2383771B1 (de) * 2010-04-29 2020-04-22 EV Group GmbH Vorrichtung und Verfahren zum Lösen einer Polymerschicht von einer Oberfläche eines Substrats
US8410393B2 (en) 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
CN103403843B (zh) 2011-03-04 2016-12-14 诺发系统公司 混合型陶瓷喷淋头
US8552346B2 (en) * 2011-05-20 2013-10-08 Applied Materials, Inc. Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US9960059B2 (en) * 2012-03-30 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Honeycomb heaters for integrated circuit manufacturing
US8677586B2 (en) 2012-04-04 2014-03-25 Lam Research Corporation Installation fixture for elastomer bands and methods of using the same
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
JP5992388B2 (ja) * 2012-12-03 2016-09-14 日本碍子株式会社 セラミックヒーター
US10177014B2 (en) 2012-12-14 2019-01-08 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US10085585B2 (en) * 2013-02-21 2018-10-02 Rain Mountain, Llc System and methods of improving the performance, safety and energy efficiency of a cooking appliance
US9677772B2 (en) 2013-02-21 2017-06-13 Rain Mountain, Llc Intelligent ventilating safety range hood control system
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US20140251214A1 (en) * 2013-03-06 2014-09-11 Applied Materials, Inc. Heated substrate support with flatness control
CN104112638B (zh) * 2013-04-22 2017-07-18 中微半导体设备(上海)有限公司 一种等离子体反应室及其静电夹盘
US9502279B2 (en) 2013-06-28 2016-11-22 Lam Research Corporation Installation fixture having a micro-grooved non-stick surface
DE102014202302B4 (de) * 2013-07-03 2015-02-19 Technische Universität Dresden Vorrichtung zum Beheizen von Vorformkörpern
KR20160026869A (ko) * 2013-07-04 2016-03-09 에베 그룹 에. 탈너 게엠베하 기질 표면을 처리하기 위한 방법 및 장치
CN104637838B (zh) * 2013-11-15 2018-06-26 中微半导体设备(上海)有限公司 一种半导体处理装置
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US9583377B2 (en) 2013-12-17 2017-02-28 Lam Research Corporation Installation fixture for elastomer bands
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
JP6240532B2 (ja) * 2014-02-27 2017-11-29 東京エレクトロン株式会社 静電チャックの温度制御方法
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
JP6265841B2 (ja) * 2014-06-11 2018-01-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運用方法
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10381248B2 (en) 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10386821B2 (en) * 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10324383B2 (en) * 2015-10-06 2019-06-18 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
CN106935468A (zh) * 2015-12-31 2017-07-07 中微半导体设备(上海)有限公司 一种半导体处理器及用于半导体处理器的多区控温加热器
US10582570B2 (en) 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
JP6767833B2 (ja) * 2016-09-29 2020-10-14 日本特殊陶業株式会社 加熱装置
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
JP6392961B2 (ja) * 2017-09-13 2018-09-19 日本特殊陶業株式会社 静電チャック
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
CN110911332B (zh) * 2018-09-14 2022-11-25 北京北方华创微电子装备有限公司 静电卡盘
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP2022545273A (ja) 2019-08-23 2022-10-26 ラム リサーチ コーポレーション 温度制御型のシャンデリア型シャワーヘッド
KR20220052996A (ko) 2019-08-28 2022-04-28 램 리써치 코포레이션 금속 증착
KR20210039825A (ko) * 2019-10-02 2021-04-12 삼성전자주식회사 기판 증착장치 및 이를 구비하는 기판 증착 시스템
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
JP7550551B2 (ja) * 2020-06-30 2024-09-13 京セラ株式会社 静電チャック
US11688615B2 (en) * 2020-08-19 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for heating semiconductor wafers
US12002668B2 (en) * 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
TWI863178B (zh) * 2023-03-21 2024-11-21 暉盛科技股份有限公司 感應耦合電漿蝕刻設備及其多迴圈式電極

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2152126A (en) * 1936-10-02 1939-03-28 John Wentworth Heating device
US3634740A (en) * 1970-04-20 1972-01-11 Addressograph Multigraph Electrostatic holddown
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode
US4518848A (en) * 1981-05-15 1985-05-21 Gca Corporation Apparatus for baking resist on semiconductor wafers
JPH079887B2 (ja) * 1985-05-22 1995-02-01 三洋電機株式会社 液相エピタキシヤル成長方法
US5001594A (en) * 1989-09-06 1991-03-19 Mcnc Electrostatic handling device
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
CA2031912A1 (en) * 1989-12-22 1991-06-23 Robert Fred Pfost Heated cover device
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
JP3238925B2 (ja) * 1990-11-17 2001-12-17 株式会社東芝 静電チャック
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
US5580607A (en) * 1991-07-26 1996-12-03 Tokyo Electron Limited Coating apparatus and method
US5294778A (en) * 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
KR100238626B1 (ko) * 1992-07-28 2000-02-01 히가시 데쓰로 플라즈마 처리장치
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
US5413360A (en) * 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5591269A (en) * 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
TW277139B (enExample) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
JP2647799B2 (ja) * 1994-02-04 1997-08-27 日本碍子株式会社 セラミックスヒーター及びその製造方法
JP3208029B2 (ja) * 1994-11-22 2001-09-10 株式会社巴川製紙所 静電チャック装置およびその作製方法
US6133557A (en) * 1995-01-31 2000-10-17 Kyocera Corporation Wafer holding member
US5854468A (en) * 1996-01-25 1998-12-29 Brooks Automation, Inc. Substrate heating apparatus with cantilevered lifting arm
JP3537269B2 (ja) * 1996-05-21 2004-06-14 アネルバ株式会社 マルチチャンバースパッタリング装置
WO1998005060A1 (en) * 1996-07-31 1998-02-05 The Board Of Trustees Of The Leland Stanford Junior University Multizone bake/chill thermal cycling module
US6080215A (en) * 1996-08-12 2000-06-27 3M Innovative Properties Company Abrasive article and method of making such article
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6022587A (en) * 1997-05-13 2000-02-08 Applied Materials, Inc. Method and apparatus for improving film deposition uniformity on a substrate
US5978202A (en) * 1997-06-27 1999-11-02 Applied Materials, Inc. Electrostatic chuck having a thermal transfer regulator pad
JP3318514B2 (ja) * 1997-08-06 2002-08-26 日本碍子株式会社 半導体支持装置
US6102909A (en) * 1997-08-26 2000-08-15 Ethicon, Inc. Scissorlike electrosurgical cutting instrument
JP3368461B2 (ja) * 1997-11-05 2003-01-20 東京エレクトロン株式会社 シェル
DE69842191D1 (de) * 1997-11-05 2011-05-05 Tokyo Electron Ltd Halbleiterscheibenhaltevorrichtung
JP3400692B2 (ja) * 1997-11-05 2003-04-28 東京エレクトロン株式会社 ウエハ温度制御装置及びウエハ収納室
JP3477062B2 (ja) * 1997-12-26 2003-12-10 京セラ株式会社 ウエハ加熱装置
US6020262A (en) * 1998-03-06 2000-02-01 Siemens Aktiengesellschaft Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer
US6259592B1 (en) * 1998-11-19 2001-07-10 Applied Materials, Inc. Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same
US6654668B1 (en) * 1999-02-16 2003-11-25 Tokyo Electron Limited Processing apparatus, processing system, distinguishing method, and detecting method
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP2001203257A (ja) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
US6472643B1 (en) * 2000-03-07 2002-10-29 Silicon Valley Group, Inc. Substrate thermal management system
US6847014B1 (en) * 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6770852B1 (en) 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control

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US7274004B2 (en) 2007-09-25
US20140034608A1 (en) 2014-02-06
US8921740B2 (en) 2014-12-30
EP1391140A1 (en) 2004-02-25
JP2004533718A (ja) 2004-11-04
US20050173403A1 (en) 2005-08-11
US8536494B2 (en) 2013-09-17
US20050173404A1 (en) 2005-08-11
EP1391140B1 (en) 2012-10-10
CN1529994A (zh) 2004-09-15
TWI267160B (en) 2006-11-21
EP1391140A4 (en) 2006-02-22
WO2002089531A1 (en) 2002-11-07
CN100401852C (zh) 2008-07-09

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