JP4537201B2 - バッチ炉 - Google Patents

バッチ炉 Download PDF

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Publication number
JP4537201B2
JP4537201B2 JP2004526235A JP2004526235A JP4537201B2 JP 4537201 B2 JP4537201 B2 JP 4537201B2 JP 2004526235 A JP2004526235 A JP 2004526235A JP 2004526235 A JP2004526235 A JP 2004526235A JP 4537201 B2 JP4537201 B2 JP 4537201B2
Authority
JP
Japan
Prior art keywords
processing
heat source
wafer
tube
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004526235A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005535128A (ja
Inventor
ヨー、ウー・シク
深田卓史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WaferMasters Inc
Original Assignee
WaferMasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/211,757 external-priority patent/US6727194B2/en
Application filed by WaferMasters Inc filed Critical WaferMasters Inc
Publication of JP2005535128A publication Critical patent/JP2005535128A/ja
Application granted granted Critical
Publication of JP4537201B2 publication Critical patent/JP4537201B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2004526235A 2002-08-02 2003-07-30 バッチ炉 Expired - Fee Related JP4537201B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/211,757 US6727194B2 (en) 2002-08-02 2002-08-02 Wafer batch processing system and method
US10/313,707 US6879778B2 (en) 2002-08-02 2002-12-05 Batch furnace
PCT/US2003/023849 WO2004013901A2 (fr) 2002-08-02 2003-07-30 Four de cuisson par lots

Publications (2)

Publication Number Publication Date
JP2005535128A JP2005535128A (ja) 2005-11-17
JP4537201B2 true JP4537201B2 (ja) 2010-09-01

Family

ID=31498035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004526235A Expired - Fee Related JP4537201B2 (ja) 2002-08-02 2003-07-30 バッチ炉

Country Status (4)

Country Link
EP (1) EP1540708A2 (fr)
JP (1) JP4537201B2 (fr)
KR (1) KR100686401B1 (fr)
WO (1) WO2004013901A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5410119B2 (ja) * 2009-03-02 2014-02-05 光洋サーモシステム株式会社 基板の熱処理装置
JP6630146B2 (ja) * 2015-02-25 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および加熱部
DE102020124030B4 (de) 2020-09-15 2022-06-15 centrotherm international AG Vorrichtung, System und Verfahren zur plasmaunterstützten chemischen Gasphasenabscheidung
KR102359596B1 (ko) * 2021-04-21 2022-02-08 주식회사 알씨테크 실캡 및 이를 포함하는 반도체 생산 설비

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2616760B2 (ja) * 1985-04-08 1997-06-04 株式会社 半導体エネルギー研究所 プラズマ気相反応装置
JPS6366927A (ja) * 1986-09-08 1988-03-25 Toshiba Corp 熱処理装置
US4738618A (en) * 1987-05-14 1988-04-19 Semitherm Vertical thermal processor
JPH06349738A (ja) * 1993-06-08 1994-12-22 Nec Corp 縦型減圧ｃｖｄ装置
JP2001517363A (ja) * 1997-03-07 2001-10-02 セミトゥール・インコーポレイテッド サブアッセンブリを加熱する半導体処理炉
JPH1197446A (ja) * 1997-09-18 1999-04-09 Tokyo Electron Ltd 縦型熱処理装置
US6191388B1 (en) * 1998-11-18 2001-02-20 Semitool, Inc. Thermal processor and components thereof
JP3862197B2 (ja) * 1999-10-19 2006-12-27 株式会社グローバル 縦型熱処理装置
JP3598032B2 (ja) * 1999-11-30 2004-12-08 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法並びに保温ユニット
JP3435111B2 (ja) * 1999-12-15 2003-08-11 株式会社半導体先端テクノロジーズ 半導体ウェハ熱処理装置
JP2001284276A (ja) * 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 基板処理装置
US6407368B1 (en) * 2001-07-12 2002-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. System for maintaining a flat zone temperature profile in LP vertical furnace

Also Published As

Publication number Publication date
EP1540708A2 (fr) 2005-06-15
WO2004013901A3 (fr) 2004-06-10
WO2004013901A2 (fr) 2004-02-12
JP2005535128A (ja) 2005-11-17
KR100686401B1 (ko) 2007-02-26
KR20050062521A (ko) 2005-06-23

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