JP4535388B2 - 液晶表示装置及びその製造方法 - Google Patents
液晶表示装置及びその製造方法 Download PDFInfo
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- JP4535388B2 JP4535388B2 JP2005340888A JP2005340888A JP4535388B2 JP 4535388 B2 JP4535388 B2 JP 4535388B2 JP 2005340888 A JP2005340888 A JP 2005340888A JP 2005340888 A JP2005340888 A JP 2005340888A JP 4535388 B2 JP4535388 B2 JP 4535388B2
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- liquid crystal
- thin film
- film transistor
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- display device
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 70
- 239000010408 film Substances 0.000 claims description 69
- 239000010410 layer Substances 0.000 claims description 33
- 238000000059 patterning Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims 3
- 230000007704 transition Effects 0.000 description 71
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000004044 response Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Description
3 映像信号線
100 基板
110 ゲート電極
115 ゲート絶縁膜
120 半導体層
130a ソース電極
130b ドレイン電極
135 絶縁膜
140 画素電極
145 配向膜
155 液晶層
200 対向基板
205 ブラックマトリックス
210a カラーフィルター
210b カラーフィルター
215 共通電極
225 配向膜
A 単位画素領域
Tr 薄膜トランジスタ領域
Claims (16)
- 基板と;
前記基板上に一方向に配列された走査信号線及び前記走査信号線に交差して配列された映像信号線と;
前記走査信号線と前記映像信号線とにより区切られた複数の単位画素領域と;
前記走査信号線と前記映像信号線との交差領域に,少なくとも二つの前記単位画素領域に渡って薄膜トランジスタが形成された薄膜トランジスタ領域と;
前記単位画素領域上で,前記薄膜トランジスタ領域の少なくとも一部と重なる画素電極と;
前記基板上部に対向して位置し,共通電極を有する対向基板と;
前記基板と前記対向基板との間に介在する液晶層と;
を備え,
前記液晶層は,OCBモードであり,
前記画素電極の前記薄膜トランジスタ領域と重なる領域は,所定の傾斜を有することを特徴とする,液晶表示装置。 - 前記液晶層と前記画素電極との間には,配向膜が介在し,前記配向膜は一定のプレチルト角を有することを特徴とする,請求項1に記載の液晶表示装置。
- 前記薄膜トランジスタ領域は,四個の前記単位画素領域に渡って位置することを特徴とする,請求項1または2に記載の液晶表示装置。
- 前記薄膜トランジスタ領域は,パターニングされた絶縁膜を有することを特徴とする請求項1〜3のいずれかに記載の液晶表示装置。
- 前記パターニングされた絶縁膜は,ゲート絶縁膜であることを特徴とする,請求項4に記載の液晶表示装置。
- 前記薄膜トランジスタ領域の薄膜トランジスタと画素電極との間に,無機保護膜が介在すること特徴とする,請求項1〜5のいずれかに記載の液晶表示装置。
- 前記無機保護膜は,パターニング形成されていることを特徴とする,請求項6に記載の液晶表示装置。
- 前記画素電極の,前記薄膜トランジスタ上の位置と,前記薄膜トランジスタから離隔した発光領域上の位置との段差は,0.2〜1μmであることを特徴とする,請求項1〜7のいずれかに記載の液晶表示装置。
- 基板上に一方向に配列する走査信号線及び前記走査信号線に交差する映像信号線を形成し,前記走査信号線と前記映像信号線とにより複数の単位画素領域が区切られる段階と;
前記走査信号線と前記映像信号線との交差領域に,前記走査信号線と前記映像信号線とに接続される薄膜トランジスタが,少なくとも二つ以上の前記単位画素領域に渡って形成される薄膜トランジスタ領域を形成する段階と;
前記単位画素領域に,薄膜トランジスタ領域の少なくとも一部と重なって,前記薄膜トランジスタと接続される画素電極を形成する段階と;
対向基板上に共通電極を形成し,前記対向基板を前記基板上部に対向配置する段階と;
前記基板と前記対向基板との間に,液晶層を注入する段階と;
を含み,
前記液晶層は,OCB液晶であり,
前記画素電極の前記薄膜トランジスタ領域と重なる領域は,所定の傾斜を有するように形成することを特徴とする,液晶表示装置の製造方法。 - 前記液晶層を注入する段階の前に,前記画素電極及び前記対向電極上に,一定なプレチルト角を有するようにラビングされた配向膜を形成する段階をさらに含むことを特徴とする,請求項9に記載の液晶表示装置の製造方法。
- 前記薄膜トランジスタ領域は,四個の前記単位画素領域に渡って形成することを特徴とする,請求項9に記載の液晶表示装置の製造方法。
- 前記薄膜トランジスタ領域は,前記薄膜トランジスタを構成する絶縁膜をパターニングして形成することを特徴とする,請求項9に記載の液晶表示装置の製造方法。
- 前記絶縁膜のパターニングは,ゲート絶縁膜のパターニングであることを特徴とする請求項12に記載の液晶表示装置の製造方法。
- 前記薄膜トランジスタと接続される画素電極を形成する段階において,前記薄膜トランジスタ領域の前記薄膜トランジスタ上に無機保護膜を形成し,前記無機保護膜上に画素電極を形成することを特徴とする,請求項9〜13のいずれかに記載の液晶表示装置の製造方法。
- 前記薄膜トランジスタと接続される画素電極を形成する段階において,前記薄膜トランジスタ上に形成された前記無機保護膜をパターニングすることを特徴とする,請求項14に記載の液晶表示装置の製造方法。
- 前記画素電極の,前記薄膜トランジスタ上部の位置と,前記薄膜トランジスタから離隔した発光領域上の位置との段差は,0.2〜1μmであることを特徴とする,請求項9〜15のいずれかに記載の液晶表示装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040098249A KR100685427B1 (ko) | 2004-11-26 | 2004-11-26 | 액정표시장치 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2006154821A JP2006154821A (ja) | 2006-06-15 |
JP4535388B2 true JP4535388B2 (ja) | 2010-09-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005340888A Expired - Fee Related JP4535388B2 (ja) | 2004-11-26 | 2005-11-25 | 液晶表示装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8537319B2 (ja) |
JP (1) | JP4535388B2 (ja) |
KR (1) | KR100685427B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI662526B (zh) * | 2018-05-02 | 2019-06-11 | 友達光電股份有限公司 | 半導體結構及畫素結構 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10142638A (ja) * | 1996-11-12 | 1998-05-29 | Matsushita Electric Ind Co Ltd | 液晶表示パネル |
JP2003129052A (ja) * | 2001-06-29 | 2003-05-08 | Dainippon Ink & Chem Inc | 液晶表示素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100670058B1 (ko) * | 2000-03-30 | 2007-01-16 | 삼성전자주식회사 | 액정 표시 장치 |
KR100481590B1 (ko) * | 2000-04-21 | 2005-04-08 | 세이코 엡슨 가부시키가이샤 | 전기 광학 장치, 투사형 표시 장치 및 전기 광학 장치의제조 방법 |
TWI234027B (en) * | 2000-06-14 | 2005-06-11 | Hannstar Display Corp | Liquid crystal display device |
JP4406173B2 (ja) * | 2001-03-08 | 2010-01-27 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置 |
US6859246B2 (en) * | 2001-06-20 | 2005-02-22 | Nec Lcd Technologies, Ltd. | OCB type liquid crystal display having transition nucleus area from splay alignment to bend alignment |
KR100831229B1 (ko) * | 2001-12-10 | 2008-05-22 | 삼성전자주식회사 | 고개구율 액정 표시 장치 |
JP3870897B2 (ja) * | 2002-01-07 | 2007-01-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
KR100859521B1 (ko) * | 2002-07-30 | 2008-09-22 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 |
KR20040084453A (ko) * | 2003-03-28 | 2004-10-06 | 삼성전자주식회사 | 액정 표시 장치 |
-
2004
- 2004-11-26 KR KR1020040098249A patent/KR100685427B1/ko not_active IP Right Cessation
-
2005
- 2005-11-18 US US11/282,380 patent/US8537319B2/en not_active Expired - Fee Related
- 2005-11-25 JP JP2005340888A patent/JP4535388B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10142638A (ja) * | 1996-11-12 | 1998-05-29 | Matsushita Electric Ind Co Ltd | 液晶表示パネル |
JP2003129052A (ja) * | 2001-06-29 | 2003-05-08 | Dainippon Ink & Chem Inc | 液晶表示素子 |
Also Published As
Publication number | Publication date |
---|---|
JP2006154821A (ja) | 2006-06-15 |
US8537319B2 (en) | 2013-09-17 |
KR20060059077A (ko) | 2006-06-01 |
KR100685427B1 (ko) | 2007-02-22 |
US20060114401A1 (en) | 2006-06-01 |
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