JP4530234B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4530234B2
JP4530234B2 JP28851698A JP28851698A JP4530234B2 JP 4530234 B2 JP4530234 B2 JP 4530234B2 JP 28851698 A JP28851698 A JP 28851698A JP 28851698 A JP28851698 A JP 28851698A JP 4530234 B2 JP4530234 B2 JP 4530234B2
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Japan
Prior art keywords
layer
growth layer
growth
lattice constant
substrate
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Expired - Fee Related
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JP28851698A
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English (en)
Japanese (ja)
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JP2000114599A (ja
JP2000114599A5 (enExample
Inventor
真也 石田
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Sharp Corp
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Sharp Corp
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Priority to JP28851698A priority Critical patent/JP4530234B2/ja
Publication of JP2000114599A publication Critical patent/JP2000114599A/ja
Publication of JP2000114599A5 publication Critical patent/JP2000114599A5/ja
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Publication of JP4530234B2 publication Critical patent/JP4530234B2/ja
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  • Led Devices (AREA)
JP28851698A 1998-10-09 1998-10-09 半導体発光素子 Expired - Fee Related JP4530234B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28851698A JP4530234B2 (ja) 1998-10-09 1998-10-09 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28851698A JP4530234B2 (ja) 1998-10-09 1998-10-09 半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009009324A Division JP4586094B2 (ja) 2009-01-19 2009-01-19 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2000114599A JP2000114599A (ja) 2000-04-21
JP2000114599A5 JP2000114599A5 (enExample) 2005-10-06
JP4530234B2 true JP4530234B2 (ja) 2010-08-25

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ID=17731250

Family Applications (1)

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JP28851698A Expired - Fee Related JP4530234B2 (ja) 1998-10-09 1998-10-09 半導体発光素子

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JP (1) JP4530234B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
JP5523277B2 (ja) * 2000-04-26 2014-06-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体素子並びに発光性半導体素子の製造方法
CN1292494C (zh) 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP2001345520A (ja) * 2000-06-02 2001-12-14 Sony Corp 半導体発光素子の製造方法
JP3876649B2 (ja) 2001-06-05 2007-02-07 ソニー株式会社 窒化物半導体レーザ及びその製造方法
KR100576857B1 (ko) * 2003-12-24 2006-05-10 삼성전기주식회사 ＧａＮ 반도체 발광소자 및 그 제조방법
JP5201563B2 (ja) * 2004-11-16 2013-06-05 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR100638818B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 질화물 반도체 발광소자
US20070069225A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
JP2007258599A (ja) * 2006-03-24 2007-10-04 Sanyo Electric Co Ltd 半導体素子及び半導体素子の製造方法
CN117913191B (zh) * 2024-03-15 2024-05-17 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

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