JP4522529B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4522529B2
JP4522529B2 JP2000090389A JP2000090389A JP4522529B2 JP 4522529 B2 JP4522529 B2 JP 4522529B2 JP 2000090389 A JP2000090389 A JP 2000090389A JP 2000090389 A JP2000090389 A JP 2000090389A JP 4522529 B2 JP4522529 B2 JP 4522529B2
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conductive layer
aluminum
wiring
oxide
oxygen
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Expired - Fee Related
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JP2000090389A
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Japanese (ja)
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JP2001281694A (ja
JP2001281694A5 (enExample
Inventor
徹 高山
舜平 山崎
恵司 佐藤
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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JP2000090389A 2000-03-29 2000-03-29 半導体装置およびその作製方法 Expired - Fee Related JP4522529B2 (ja)

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JP2000090389A JP4522529B2 (ja) 2000-03-29 2000-03-29 半導体装置およびその作製方法

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JP2000090389A JP4522529B2 (ja) 2000-03-29 2000-03-29 半導体装置およびその作製方法

Related Child Applications (1)

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JP2010050131A Division JP5244837B2 (ja) 2010-03-08 2010-03-08 半導体装置

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JP2001281694A JP2001281694A (ja) 2001-10-10
JP2001281694A5 JP2001281694A5 (enExample) 2007-05-24
JP4522529B2 true JP4522529B2 (ja) 2010-08-11

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103392198A (zh) * 2011-02-28 2013-11-13 夏普株式会社 电极基板以及具备该电极基板的显示装置和触摸面板
KR101456355B1 (ko) * 2011-12-28 2014-11-03 보에 테크놀로지 그룹 컴퍼니 리미티드 금속 산화물의 표면 처리 방법과 박막 트랜지스터를 제조하는 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3980387B2 (ja) 2002-03-20 2007-09-26 富士通株式会社 容量検出型センサ及びその製造方法
JP4021392B2 (ja) * 2002-10-31 2007-12-12 セイコーエプソン株式会社 電気光学装置及び電子機器
JP3925549B2 (ja) * 2002-11-26 2007-06-06 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100623247B1 (ko) * 2003-12-22 2006-09-18 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
KR100626007B1 (ko) 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터의 제조방법, 이박막 트랜지스터를 구비한 평판표시장치, 및 이평판표시장치의 제조방법
JP4974500B2 (ja) * 2004-09-15 2012-07-11 株式会社半導体エネルギー研究所 半導体装置、モジュール及び電子機器
CN101044627B (zh) 2004-09-15 2012-02-08 株式会社半导体能源研究所 半导体器件
JP2011204752A (ja) * 2010-03-24 2011-10-13 Mitsumi Electric Co Ltd カーボンナノチューブ電界効果トランジスタを含む集積回路、およびその製造方法
JP2012032521A (ja) * 2010-07-29 2012-02-16 Kobe Steel Ltd 耐透明導電膜ピンホール腐食性に優れた薄膜トランジスタ基板
CN104882566B (zh) * 2015-05-21 2017-12-22 京东方科技集团股份有限公司 一种发光二极管封装结构和封装方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05289105A (ja) * 1992-04-14 1993-11-05 Hitachi Ltd 液晶表示装置およびその製造方法
JPH0618912A (ja) * 1992-07-03 1994-01-28 Fujitsu Ltd 液晶表示装置及びその製造方法
JPH07169966A (ja) * 1993-12-16 1995-07-04 Sharp Corp 電子部品及びその製造方法
JP3238020B2 (ja) * 1994-09-16 2001-12-10 株式会社東芝 アクティブマトリクス表示装置の製造方法
JP3646311B2 (ja) * 1996-02-09 2005-05-11 セイコーエプソン株式会社 多層配線のコンタクト構造、アクティブマトリクス基板及びその製造方法
JP2000002892A (ja) * 1998-04-17 2000-01-07 Toshiba Corp 液晶表示装置、マトリクスアレイ基板およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103392198A (zh) * 2011-02-28 2013-11-13 夏普株式会社 电极基板以及具备该电极基板的显示装置和触摸面板
CN103392198B (zh) * 2011-02-28 2015-11-25 夏普株式会社 电极基板以及具备该电极基板的显示装置和触摸面板
KR101456355B1 (ko) * 2011-12-28 2014-11-03 보에 테크놀로지 그룹 컴퍼니 리미티드 금속 산화물의 표면 처리 방법과 박막 트랜지스터를 제조하는 방법

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JP2001281694A (ja) 2001-10-10

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