JP4509713B2 - Wafer carrier - Google Patents

Description

  The present invention relates to a wafer carrier used in a semiconductor manufacturing process.

  In recent years, in a semiconductor manufacturing process using 300 mm wafers, for example, a single wafer processing method of processing wear one by one may be employed instead of a method of batch processing 25 wafers as one batch. Processes employing single wafer processing include, for example, steps such as wafer cleaning, etching, and CVD processing.

  The background of using the single wafer processing method is the need for managing wafers one by one as the pattern becomes finer, and the Q-TAT method (quick-turn) in order to cope with the production of a small variety of products. The need to realize the (around time method) arises. Wafers on which such single wafer processing is performed are housed in a wafer carrier as described in Patent Document 1 below, and are transported in batches for every predetermined number of sheets.

  Next, a FOUP (front open unified pod) used as a wafer carrier will be described with reference to a perspective view of FIG. 13A and a horizontal sectional view of FIG.

  The hoop 501 roughly includes a shell 503 that is a pod main body, and a door 505 that can be opened and closed in order to move a wafer into and out of the pod from the outside of the shell 503 and to prevent particles from entering the inside and preventing chemical contamination. It consists of.

  The shell 503 is provided with a flange 507 for automatically lifting and lowering the hoop 501, a manual handle 513 for carrying by a worker, and a side rail 515 for automatically transporting the hoop 501. . Further, the door 505 is provided with a registration pin hole 509 for positioning the hoop 501 and a latch key hole 511 for opening / closing and locking the door 505.

  The wafer 521 accommodated in the FOUP 501 is placed on a wafer support 523 attached to both side surfaces in the FOUP 501, and is further held by a retainer portion 525 that is a wafer pressing mechanism provided on the door 505.

  Next, referring to a perspective view of the hoop 501 with the door 505 removed as shown in FIG. 14 (a) and a vertical sectional view seen from the front of the hoop 501 as shown in FIG. 14 (b), The internal structure of the hoop 501 will be described.

  The wafer 521 is placed on each stage of a wafer support 523 having a comb-like cross section attached to each of the cells 531 arranged to be divided into left and right inside the shell 503. For example, the wafer support 523 is formed integrally with the cell 531. The cell 531 is supported from above and below the hoop 501 by a screw 525 attached through the upper surface of the shell 503 and a screw 527 attached through the lower surface of the shell 503. The lower surface of the hoop 501 is attached to a kinematic base plate 529 for matching the reference.

  Incidentally, in the semiconductor factory, the wafer 521 is accommodated in the FOUP 501 and moved between the processing apparatuses. In each processing apparatus, in the state shown in FIG. 13, the door 505 of the hoop 501 is removed from the shell 503, and then the wafer 521 is taken out from the front surface of the hoop 501 and transferred to a processing unit (not shown) inside the processing apparatus. Then, necessary processing is performed. Further, after the processing is completed, the processed wafer 521 is returned to the FOUP 501.

Such processing is performed for each wafer 521. After processing of all the wafers 521 is completed, the FOUP 501 is transported and temporarily stored, and then transported to the next processing apparatus. By repeating these steps, a desired semiconductor circuit is formed on the wafer 521.
JP 2002-110769 A (FIG. 5)

  For example, a single-wafer LPCVD (low pressure chemical vapor deposition) method is used for wafer processing, which is used when forming an interlayer insulating film under wiring such as aluminum or copper, or forming a passivation film for protecting the function of a semiconductor circuit. .

As a film type of the insulating film, there is a BPSG film which is a SiO ₂ film containing boron (B) and phosphorus (P). For forming the BPSG film, for example, a hydrogen compound such as SiH ₄ (silane), B ₂ H ₆ (diborane), PH ₃ (phosphine) and oxygen (O ₂ ) are reacted, or TEOS (tetraethoxysilane) is used. ), TMPO (trimethyl phosphate), TMB (trimethoxyboron) and other organic sources and ozone (O ₃ ).

  By the way, the reason why the P component is added to the insulating film is to getter sodium (Na), which is a mobile ion, and to reduce the reflow temperature of the insulating film. This is because the stress can be controlled so that cracks are unlikely to occur.

As a film type, there is a PSG film (SiO ₂ film containing P). When forming the PSG film, when adding P ₂ O ₅ into SiO ₂ , P ₂ O ₃ is mixed depending on the method. P ₂ O ₃ can be flattened at a lower temperature than P ₂ O ₅ , but has sublimation properties, so that defects may occur on the film surface in the reflow process.

The SiO ₂ film containing B and P is unstable and hygroscopic. Moreover, about P, phosphoric acid may arise by reaction with a water | moisture content. This is because the hygroscopicity of P ₂ O ₅ is high. Depending on the CVD processing conditions, metaboric acid (HBO ₂ ) microcrystals may precipitate. Furthermore, phosphoric acid may cause corrosion to metal wiring such as wiring and copper wiring, and may also damage silicon nitride (Si ₃ N ₄ ) film.

By the way, in the single wafer type LPCVD method, there is a possibility that secondary contamination (cross contamination) may occur. The mechanism will be described below.
(1) When the processed wafer processed by the above method is returned to the hoop containing the unprocessed wafer, the processed and unprocessed wafers are mixed in the FOUP.
(2) Gas containing phosphorus, for example, volatilizes from the processed wafer in the hoop.
(3) The phosphorous gas reacts with the moisture in the hoop to produce phosphoric acid, which contaminates the unprocessed wafer.
(4) When a wafer contaminated with phosphoric acid is processed with a CVD apparatus, abnormal film formation occurs.

On the other hand, there is etching as wafer processing, for example, there is processing for dry etching of aluminum wiring using a gas in which N ₂ , CF ₄ , O ₂ , H ₂ O or the like is added to Cl ₂ or BCl ₃ . After the dry etching, Cl-based gas is volatilized from the wafer. If the processed wafer is put in the FOUP as it is, the alumite on the aluminum wiring surface of the unprocessed wafer may be corroded.

  As described above, the hoops as shown in FIGS. 13 and 14 are designed so that there is almost no air flow. Therefore, gas is discharged from the processed wafer and stays in the hoop, and another hoop is used. The risk of contaminating the wafer is increased.

  In order to avoid mixing processed and unprocessed wafers, it is only necessary to return processed wafers to another hoop, but this is desirable because the management of wafers and hoops increases and running costs increase. is not.

  Accordingly, the present invention provides a wafer carrier capable of maintaining a clean atmosphere around each wafer even when processed and unprocessed wafers are mixed without the presence of corrosive gases such as phosphorus and chlorine in the hoop. The purpose is to provide.

In order to solve the above problems, the following wafer carrier is provided. A first aspect of the present invention, the interior of Fu-flop consisting of a door and the shell, a wafer carrier with a cell input and capable provided a box shape, the cell is housed inside a front cell wafer support for mounting the upper blade is provided that is, the side cell after the wafer support is not provided, a bonded structure, in the front cell, the wafer support partition is provided between the placed wafer Ru arranged to partition the, to the rear cells, that have a partition and a slit-shaped opening arranged to partition the wafer is provided This is a wafer carrier.

The second aspect of the present invention is that the front cell has conductivity or is subjected to antistatic treatment, and is configured using a member in which the upper surface of the shell and the lower surface of the shell are conductive. A featured wafer carrier.

  According to a third aspect of the present invention, there is provided a wafer carrier characterized in that an opening is provided on the opposite side of the cell facing the wafer loading / unloading side.

  According to a fourth aspect of the present invention, in the cell, the front cell having conductivity or antistatic treatment is joined to the rear cell formed transparent and provided with an opening. A wafer carrier comprising a cell.

A fifth aspect of the present invention, the rear cell, a wafer carrier, characterized in that it comprises a lid cormorants covers the slit opening.

  A sixth aspect of the present invention is a wafer carrier, wherein an opening is further provided in the cover, and a filter and / or a fan is provided in the opening.

  A seventh aspect of the present invention is a wafer carrier, wherein an opening is provided in the shell, and a filter and / or a fan is provided in the opening.

The present invention accommodates wear provided on the inside of a shell portion of a hoop used for a wafer carrier in a semiconductor manufacturing process, forms a cell for placement on the box, and places a wafer inside the cell. And a partition for partitioning the wafers from each other are provided between the wafer supports.
Thereby, a corrugated gas such as phosphorus and chlorine does not stay in the FOUP, and a FOUP capable of maintaining a clean atmosphere even if processed and unprocessed wafers coexist can be provided.

The hoop of the present invention will be described below with reference to the drawings. (Door 505)
FIG. 1 is a perspective view showing a state in which the front of a hoop that is a wafer carrier according to an embodiment of the present invention is opened. FIG. 2 is a perspective view showing a state in which a wafer cell is taken out from the hoop shown in FIG. FIG.

  The hoop 1 includes a shell 3 having an opening on the front surface, a flange 5 provided on the upper surface of the shell 3, and a kinematic base plate 7 attached to the lower surface in order to meet a reference. An integrated cell 9 is provided in the shell 3, and a wafer 13 is placed on a wafer support 11 provided in the cell 9. Further, a door 505 (4 in FIG. 11) is detachably attached to the front surface of the shell 3 as in the conventional example shown in FIG. The appearance of the shell 3 may be substantially the same as that of the conventional example shown in FIG.

  In the region near the front end of the bottom of the shell 3, two first vent holes 6 are formed with a space left and right as shown in FIG. 2, and below each of the first vent holes 6. As shown in the cross-sectional view of FIG. 3, an atmosphere cleaning filter 8 is attached. The filter 8 has a plug 8a that contains cellular Teflon (registered trademark) and has upper and lower openings, and a filter base 8b that is disposed between the plug 8a and the vent hole 6. The filter 8 removes dust, contaminants, etc. in the air that enter the shell 3 through the vent hole 6.

  In addition, a second vent hole 10 is formed in the inner region of the bottom of the shell 3, and the air, gas, etc. in the shell 3 are discharged to the outside under the second vent hole 10. The fan 12 is attached. As the fan 12, for example, as shown in FIG. The power for driving the fan 12 may be supplied from the outside, or a battery may be attached to the hoop 1 and supplied from the battery.

  As shown in FIG. 5, the cell 9 accommodated in the shell 3 has a box shape having a front surface opened for loading and unloading the wafer 13 and a plurality of gas vent holes 19 on the rear surface. The space is large enough to store the wafers 13 with a gap therebetween. The cell 9 is configured by joining a front cell 15 shown in FIG. 6 and a rear cell 17 shown in FIG.

  As shown in the perspective view of FIG. 6A, the front cell 15 is a rectangular parallelepiped box that is open at the front and rear, the horizontal dimension is slightly longer than the dimension of the wafer 13, and the depth thereof is the wafer. The size is such that 13 protrudes slightly forward and backward. Further, inside the front cell 15, as shown in FIGS. 6A and 6B, the internal space is divided into n (n> 1) spaces 23 at equal intervals in the vertical direction. A partition 21 is attached from one side surface to the other side surface. The number of the partitions 21 is 12, for example, and the number of spaces 23 is 13.

  A narrow strip-shaped wafer support 11 that supports the edge of the wafer 13 is attached to each of both side surfaces inside the front cell 15 from the front end to the rear end of each side surface. The wafer supports 11 are located at approximately the intermediate position between the top plate of the front cell 15 and the partition 21, approximately the intermediate position between the partitions 21, and approximately the intermediate position between the bottom plate of the front cell 15 and the partition 21. It is attached and protrudes inward so as to be parallel to the partition 21. Further, the wafer support 11 is attached to a position where the wafer 13 placed thereon is not brought into contact with the top plate, bottom plate and partition 21 of the front cell 15.

  On the other hand, as shown in the perspective view of FIG. 7 (a), the rear cell 17 is a box having a front portion opened and a back portion 25 curved inward from both side edges of the front portion to the rear. From the upper surface to the rear, a collar portion 31 that is curved so as to follow the inner surface shape of the rear portion of the shell 3 protrudes.

  Further, the height and width of the front surface portion of the rear cell 17 are equal to the height and width of the rear surface portion of the front cell 15. Further, n−1 partitions 27 that are divided into n (n> 1) spaces 29 at equal intervals in the vertical direction are attached along the inner surface of the back surface portion 25 inside the rear cell 17. . Thereby, the inside of the rear cell 17 is partitioned into n spaces 29 at equal intervals in the vertical direction by the partition 21.

  In the back surface portion 25 of the rear cell 17, as shown in FIGS. 7 to 9, a horizontally long slit along the rear end on each of the upper and lower surfaces of the partition 21 and the upper and lower surfaces in the rear cell 17 is provided. A shaped opening 19 is formed. Thereby, the rear part of each space 29 is in a state connected to the upper and lower two opening parts 19.

  The front portion of the rear cell 17 is joined to the rear portion of the front cell 15, thereby forming one cell 9 as shown in FIG. In a state where the front cell 15 and the rear cell 17 are aligned in the front-rear direction, the partition 21 of the front cell 15 and the partition 27 of the rear cell 17 are connected to each other at the same height. Thereby, as shown in the cross-sectional view of FIG. 8, the space 23 of the front cell 15 and the space 29 of the rear cell 17 are connected in one cell 9 to form a space 55 in the vertical direction.

  Further, as shown in FIG. 9, the rear portion of the space 55 is connected to a slit-like opening portion 19 that is narrow above and below the joint portion 33 of the partition 27 and the back surface portion 25. Further, as shown in FIG. 5, the wafer 13 placed on each stage of the wafer support 11 protruding inward from both side surfaces in the cell 9 includes an unprocessed wafer 53 and a processed wafer 51.

  As shown in the vertical cross-sectional view of the front of FIG. 10 and the horizontal cross-sectional view of FIG. The cell 9 is fixed in the shell 3 by the first screw 41 attached and the second screw 43 attached through the vicinity of the left and right ends of the lower surface of the shell 3.

  As described above, the internal space of the cell 9 is divided into n spaces 55 in the vertical direction by the partitions 21 and 27, and there is a wafer on each stage of the wafer support 11 provided on both sides of each space 55. 51 and 53 are placed.

  The wafer support 11 is arranged so that the wafers 51 and 53 on the lowermost wafer support 11 and the wafer 521 on the lowermost wafer support 523 of the conventional example shown in FIG. Is done. The wafers 51 and 53 supported by the second-stage wafer support 11 from the bottom in the cell 9 are the wafers supported by the third-stage wafer support 523 of the conventional example shown in FIG. It is at the same height and position as 521. That is, the n-th stage wafer support 11 in the cell 9 has a height substantially equal to the 2n-1 stage of the conventional wafer support shown in FIG.

  Accordingly, the uppermost wafer support 11 of the present invention is in the thirteenth stage, which is the same height as the uppermost 25th stage wafer support 523 in the conventional example.

  As described above, in the cell 9 of the present embodiment, the reason why the space 55 has 13 steps is that there is a problem such as contact with the partitions 21 and 27 when the wafers 51 and 53 are taken out of the hoop using the end effector. This is because the operation conforms to the standard of FIMS (Front-opening Interface Mechanical Standard). Therefore, it is not necessary to stick to 13 stages depending on the design conditions and equipment used, and it goes without saying that a desired number of stages can be selected.

  When the cell 9 is housed in the shell 3 as described above and a wafer is placed on each stage of the wafer support 11 of the cell 9 to perform film forming, etching, etc. in a single wafer type, the inner wall of the front cell 15 One of the processed wafer 51 and the unprocessed wafer 53 is placed on each of the stages of the wafer support 11 provided on the wafer support 11.

  For example, in the state shown in FIG. 8, the processed wafer 51 is supported by the wafer support 11 in the lower space 55, and the wafer in the upper space 55 is empty because it is being processed. In the space 55, the unprocessed wafers 53 are sequentially placed on the wafer support 11.

  The processed wafer 51 and the unprocessed wafer 53 are mixed in the same shell 3. However, since the wafers 51 and 53 are respectively disposed in the spaces 55 divided by the partitions 21 and 27 by dividing the cell 9, gas generated from the processed wafer 51, for example, corrosive gas, is applied to the unprocessed wafer 53. It can be prevented from reaching and contaminating.

  Further, since the processing chamber is maintained at a high pressure when the door 4 is opened and closed or during the wafer processing, when air flows into the hoop 1, the high-pressure air flows into each space 55 of the cell 9. When the high-pressure air flows into the space 55 of the hoop 1, turbulent flow is generated and the atmosphere in the space 55 is agitated. As a result, the generated corrosive gas and deposited particles may be discharged out of the space 55.

  It is necessary to release the pressure by releasing the inflowing air to the outside of the cell 9 so as not to cause a turbulent flow in the space 55, and an opening 19 is provided as the opening means. Accordingly, the corrosive gas generated from the processing wafer 51 is discharged out of the cell 9 through the opening 19.

  That is, when the wafers 51 and 53 are placed in the space 55 partitioned by the partitions 21 and 27, contamination from the wafer 51 in each space 55 to the other wafers 51 and 53 can be prevented. The generated corrosive gas stays in the space 55. However, by providing the opening 19 at the rear part of the cell 9, the corrosive gas in the space 55 can be discharged as the pressure is released.

  As shown in the partially enlarged view of FIG. 9, the opening 19 is provided above and below the joint portion 33 between the back surface portion 25 of the rear cell 17 and the partition 27, and is long horizontally and narrow in the height direction. It has a slit shape. In addition, the location which provides the opening part 19 has various aspects, such as only the upper part of the junction location, the lower side, or the center part between the junction locations 33, for example.

  The gas in the shell 3 containing the cells 9 is forcibly released to the outside by the fan 12 through the second ventilation hole 10 at the bottom of the shell 3. Further, the gas in the shell 3 that houses the cell 9 and whose front surface is closed by the door 4 is forcibly exhausted from the second vent hole 10 by the fan 12, while the pressure in the shell 3 decreases. Clean gas flows from the first vent 6 through the filter 8. The gas that has flowed in also diffuses in the height direction of the cell 9.

  As a result, the gas flowing outside the cell 9 through the opening 19 is discharged to the outside of the hoop 1, so that the corrosive gas emitted from the wafer is prevented from refluxing inside the cell 9.

  By the way, the dimensions of the opening, the shape of the opening, the opening area, or the opening location are appropriately designed according to air pressure, inflow, corrosive gas, volatile components, particle contamination, hoop cleaning conditions and other usage conditions. Just do it. In short, it is important that air is exhausted from the openings 19 so as not to cause turbulent flow from each space 55.

  The embodiment will be described with reference to FIG. The cell 61 includes the front cell 15 and the rear cell 17 in the same manner as described above. The shapes of the front cell 15 and the rear cell 17 are the same as those shown in FIG. However, the structure in which the side wall 71 extending downward from the outer edge of the collar portion 31 of the rear cell 17 and the bottom portion 73 formed thereunder is different from that in FIG. 7 in accordance with the outer edge shape of the collar portion 31. Thus, a space portion 69 having a substantially crescent-shaped horizontal cross section is formed below the collar portion 31.

  In FIG. 12, the partition 63, the wafer support 64, and the space 65 of the cell 61 are illustrated, but the wafer is omitted. An opening 67 is formed in the back surface 25 of the rear cell 17 at the same position as the opening 19 as shown in FIG.

  By the way, air discharged from the opening 67 or air containing particles or corrosive gas is discharged into the space 69. Therefore, it is desirable that the air released into the space 69 is further released and removed from the system, and one or more openings 74 may be provided in any of the side wall 71, the bottom 73, and the collar 31. preferable.

  The size, shape, opening area, or opening location of the opening 74 may be appropriately designed according to the air pressure, the amount of inflow, corrosive gas, volatile components, particle contamination, etc., the cleaning conditions of the hoop 1 and other usage conditions. . In short, it is important that air is discharged from the openings 74 from each space 65 so as not to cause turbulent flow.

  For example, a filter such as a membrane filter or a breather filter may be provided in the opening 74 to prevent the particles from being diffused. Further, a corrosive gas or the like may be removed using a filter having a special adsorption function.

  Further, in order to increase the suction force, a fan may be provided for suction. For example, an opening 74 may be provided in the bottom 73, and the opening 74 and the second vent hole 10 provided in the hoop 1 may be communicated with each other by a hose or the like. There is also a method of exhausting air from the opening 74 through the filter or the fan 12.

  Also in this embodiment, the filter 6 may be provided in the hoop 1 as shown in FIG. That is, the bottom of the shell 3 is provided with a filter plug 8 for releasing pressurized air when the door 4 of the hoop 1 is opened or closed or when a wafer is processed. In the present embodiment, the air discharged from the opening 67 provided in the cell 61 or the air containing particles or corrosive gas is used as it is or after passing through the space 69 as described above, or the shell. 3 is released. Usually, the air in the shell 3 is released from the filter plug 6a when the pressurized air is released.

  However, in the present embodiment, the filter 6 is used so as to cope with insufficient discharge, or in addition, an opening for discharging may be provided on the top surface, side surface, bottom surface, or back surface of the shell 3. It is desirable to provide it. A plurality of them may be provided. For example, a filter such as a membrane filter or a breather filter may be provided in the opening to prevent the particles from being diffused. Further, a corrosive gas or the like may be removed using a filter having a special adsorption function. Further, for example, a fan may be provided in the opening. By providing a fan, exhaust can be forced.

  In the hoop 1 according to the above-described embodiment, the portion on which the wafer is placed has conductivity or antistatic treatment is performed, and the hoop 1 is electrically connected vertically. That is, it is preferable that the cell 9 has conductivity or is subjected to antistatic treatment. In order to prevent particles from adhering to the wafer due to static electricity, it is particularly preferable that the front cell 15 including the wafer holder 11 on which the wafer is placed has conductivity or is subjected to antistatic treatment.

  The front cell 15 is formed using a resin such as PC (polycarbonate) or COP (cycloolefin polymer), but other materials may be used as long as they can achieve the above object. And, for example, carbon or carbon fiber is kneaded and molded into the resin to have conductivity, and it goes without saying that there is no problem even if a metal is used.

  Antistatic treatment includes a method of kneading a surfactant in a resin, a method of applying a conductive polymer to the surface of the resin, and the like.

  Further, the member is provided with conductivity or subjected to antistatic treatment as described above, and further, the member on the upper side of the shell 3, the cells 9 and 61 in the shell 3, and the member on the lower side of the shell 3 are electrically connected. It is desirable to select This is because grounding such as static electricity becomes possible by conducting.

  Furthermore, in the above-described embodiment, it is desirable that the rear cell 17 is formed to be transparent so that the appearance and the mounting state of the wafer mounted in the cells 9 and 61 can be observed. The shell 3 is formed transparent using resin. Although it is desirable that the entire cell 9 is formed to be transparent, the cells 9 and 61 including the wafer holders 11 and 64 on which the wafer is placed are formed by kneading with carbon black, for example, when imparting conductivity. Therefore, it becomes black and the internal wafer cannot be seen. Therefore, it is desirable to form the rear cell transparently.

  It can be used for a wafer carrier for semiconductor manufacturing processes.

FIG. 1 is a perspective view showing a hoop according to an embodiment of the present invention. FIG. 2 shows a shell constituting the hoop according to the embodiment of the present invention. FIG. 3 is a cross-sectional view showing a filter attached to a vent hole of a shell constituting the hoop according to the embodiment of the present invention. FIG. 4 is a cross-sectional view showing a filter attached to the vent hole of the shell constituting the hoop according to the embodiment of the present invention. FIG. 5 is a perspective view showing a cell constituting the hoop according to the embodiment of the present invention. FIGS. 6A and 6B are a perspective view and a front view showing a front cell constituting the hoop according to the embodiment of the present invention. 7A and 7B are a perspective view and a front view showing a rear cell constituting the hoop according to the embodiment of the present invention. FIG. 8 is a vertical sectional view showing a part of a cell constituting the hoop according to the embodiment of the present invention. FIG. 9 is an enlarged cross-sectional view of a part of FIG. FIG. 10 is a vertical sectional view of a hoop according to an embodiment of the present invention. FIG. 11 is a horizontal sectional view of a hoop according to an embodiment of the present invention. FIG. 12 is a perspective view showing a cell constituting a hoop according to another embodiment of the present invention. FIGS. 13A and 13B are a perspective view and a horizontal sectional view showing a conventional hoop. FIG. 14A is a perspective view of a shell constituting a conventional hoop, and FIG. 14B is a vertical sectional view of the conventional hoop.

Explanation of symbols

1: Hoop 3: Shell 4: Door 5: Flange 6, 10: Vent 7: Kinematic base plate 9: Cell 11: Wafer support 12: Fan 13: Wafer 15: Front cell 17: Rear cell 19: Opening 21 : Partition 23: Space 25: Back part 27: Partition 29: Space 31: Brim part 33: Joint part 41: Screw 43: Screw 51: Processed wafer 53: Unprocessed wafer 55: Space 61: Cell 63: Partition 64: Wafer Support 65: Space 67: Opening 69: Space 71: Side wall 73: Bottom 74: Opening

Claims (6)

Inside of Fu-flop consisting of a door and the shell, a wafer carrier with a cell input and capable provided a box shape,
The cell includes a front cell wafer support for mounting the upper blade being housed inside is provided, and side cells after the wafer support is not provided, a bonded structure,
The front cell, the wafer support partition is provided between the placed wafer Ru arranged to partition the, to the rear cell partition disposed so as to partition between the wafer and the slit-shaped wafer carrier characterized that you have an opening of is provided. 2. The wafer according to claim 1, wherein the front cell has conductivity or is subjected to an antistatic treatment, and is configured using a member in which an upper surface of the shell and a lower surface of the shell are electrically connected. Career. Wafer carrier of claim 1 wherein the rear cell, characterized that you are transparent form. Wafer carrier of claim 1 wherein the rear cell, characterized in that it comprises a lid cormorants covers the slit opening. The wafer carrier according to claim 4 , wherein an opening is further provided in the cover, and a filter and / or a fan is provided in the opening.   The wafer carrier according to claim 1, wherein an opening is provided in the shell, and a filter and / or a fan is provided in the opening.

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