1307933 (1) 玖、發明說明 【發明所屬之技術領域】 本發明是關於對半導體晶圓或玻璃基板等的被處理基 板施加蝕刻或光阻去灰（ashing )等的電漿處理、塗佈光 阻液等的基板處理裝置。 【先前技術】 已知有爲了更有效率地進行在光阻去灰等的減壓下之 電漿處理，因此從收納複數枚被處理基板的晶圓匣（ cassette )使用多關節機器人而一枚一枚地將被處理基板 送進電漿處理室，而且製作成使用多關節機器人將處理完 成後的被處理基板送回到別的晶圓匣之電漿處理裝置。（ 專利文獻1 ) 已知有上述處理是雖然在已減少浮游的塵埃等的微粒 (particle)數的無塵室（clean room)內進行，但是在最 近爲了更抑制微粒污染，因此將晶圓匣自身放入被稱爲晶 圓盒（FOUP: Front Opening Unified Pod)的密閉型的容 器內，另一方面，將電漿處理室及多關節機器人配置在防 止從外部的微粒之侵入的機殼內，將上述晶圓盒的開口氣 密地連結在該機殻所形成的開口，製作成從外部遮斷的狀 態下進行電漿處理的電漿處理裝置。（專利文獻2) (專利文獻1) 日本特開平10-30183號 第1圖 (專利文獻2) 日本特開平11-102951號 段落【0006】、段落【0013】、段落【〇〇15】、第2 1307933 (2) 圖、第9圖 【發明內容】 〔發明所欲解決之課題〕 在專利文獻2的第1圖是以平面看來在形成八角形的 機殼內配置多關節機器人，將電漿處理室連結在形成該八 角形的機殼的兩側面，另外將兼具冷卻室的真空預備室（ 試料導入室（Load Lock Chamber))連結在其他的兩側 面，在隔著該真空預備室而與晶圓盒之間揭示有進行被處 理基板的交接之構造，另外在專利文獻2的第9圖，將電 漿處理室連結在形成八角形的機殼的兩側面’另外將晶圓 盒連結在其他的兩側面，而且揭示有將冷卻室連結在剩下 的兩側面。 在專利文獻2的第1圖所示的構造，是必須要設置與 晶圓盒之數同數的真空預備室導致裝置變大’另外將真空 預備室作爲冷卻室而使用之間是不能將其他的被處理基板 送進電漿處理室以致不能進行有效率之處理。 另外專利文獻2的第9圖所示的構造’是冷卻室展開 於裝置的左右，導致作爲裝置整體的佔有面積變大。 另外，雖然也有考慮不特別地設置冷卻室而在裝置的 一部份設置待機場所，但是在該構造是必須要設置在與多 關節機器人不干涉的地方’而且在裝置配置設計上容易產 生不適處。 而且，在設置冷卻室的情況’塵埃等的微粒是經時性 -5- (3) 1307933 地容易堆積在該冷卻室內’而且此爲具有牽連微粒污染的 疑慮。 〔用以解決課題之手段〕 解決上述課題的本發明，是將電漿處理室或塗佈裝置 等的處理部及多關節機器人配置在防止從外部的微粒之侵 入的機殼內，而且製作成藉由該多關節機器人來進行配置 在機殻外的晶圓盒與處理部之間的被處理基板之交接的基 板處理裝置之中，在上述機殼的正面朝左右離間而設置一 對將晶圓盒的開口及機殼內氣密地連結的開口，在比該開 口從更下方位置使一對晶圓盒承載部朝左右離間而突出， 另外在機殼的正面於上述一對晶圓盒承載部之間形成膨出 部，而且將該膨出部的內側空間作成被處理基板的冷卻或 待機之用的存料空間。 根據由於作成上述構成來將無用空間有效率地利用而 配置存料空間，就可提供不將裝置大型化而且具有高功能 的裝置。 尤其，利用將上述晶圓盒承載部的前後方向尺寸及上 述膨出部的突出尺寸作成大致相同，來使膨出部不形成妨 礙。 另外，藉由將上述存料空間的天花板面朝向面前而下 降的傾斜面、底面是作成朝向內側而下降的傾斜面，來使 在存料空間內的微粒不容易堆積。而且藉由將上述存料空 間作成空氣的流路，就可積極地將存料空間內的微粒排除 -6- (4) 1307933 【實施方式】 以下根據添附圖面說明本發明的實施方式。此處，第 1圖是將本發明的基板處理裝置適用在電漿處理裝置之例 的全體立體圖，第2圖是同電漿處理裝置的縱剖面圖，第 3圖是同電漿處理裝置的橫剖面圖。 電漿處理裝置是將機器收納在整體形成大致長方體狀 的機殼1內。該機殼1是形成防止從外部的微粒之侵入的 構造。 在機殻1的正面朝左右離間而設置有一對將晶圓盒F 的開口及機殼1內氣密地連i的開口 2。而且，在未與晶 圓盒F連結的情況，開口 2是以來封閉而且防止向 機殼1內的微粒2侵入。 在比上述開口 2更下方位置之中，從機殼1使一對晶 圓盒承載部4朝左右離間而突出，然後，在此等一對晶圓 盒承載部4之間形成有膨出部5，該膨出部5是作成前後 方向尺寸與上述晶圓盒承載部4的前後方向尺寸大致相同 ，將其內側空間作爲被處理基板的冷卻或待機之用的存料 空間6。 存料空間6是如第2圖所示，在內部朝上下設置有複 數層承載平台7，另外天花板面6a形成有朝向面前而下 降的傾斜面，底面6 b是形成有朝向內側而下降的傾斜面 ，形成微粒不會附著在內面的構造。 -7- (5) 1307933 上述承載平台7是藉由在上層的被處理基板之取出和 放入以使微粒等不掉落至下層的方式，在承載平台7的正 上方配置頂板7a。而且，在承載平台7是經常地預先使 按照必要之枚數的樣本晶圓待機也可。該樣本晶圓是在基 丰反處理裝置運轉開始而處理狀態不穩定時，作爲被處理基 板的替代而被搬入到處理裝置內，而且處理狀態穩定之後 是被搬出而承載於承載平台7。 另外在膨出部5的外側部是設置有排氣通路8，該排 氣通路8及上述存料空間6是隔著形成在壁面的孔部9並 相連通，製作成從存料空間6內積極地讓空氣排出。孔部 9是對應於各承載平台7所設置。 另一方面，在機殻1內配置有多關節機器人10及電 漿處理室20。多關節機器人10是具備本體11及兩支多 關節臂12，本體1 1是將垂直軸作爲中心而可作成旋轉自 如，多關節臂12是除了升降動作之外依照調機位置（ teaching)而進行伸縮動作，而且多關節機器人1〇整體是 藉由未圖示的缸體單元（cylinder unit)等的驅動而沿著 導軌1 3並作成可移動到相對向於左右的電漿處理室20的 位置。而且，多關節機器人10的構造是不侷限於上述。 另外，電漿處理室20是附設試料導入室21，隔著該 試料導入室21，而製作成能進行被處理基板的搬入及搬 出。亦即，在試料導入室21內也設置有交接臂，藉由該 臂而進行與多關節機器人1〇之間的被處理基板的交接。 另外，電漿處理室20是將反應性氣體導入部23設置 -8- (6) 1307933 在電漿產生用的石英室22的上部，在石英室22的外周是 設置法拉第屏蔽（faraday shield) 24，在該法拉第廃蔽 24的外側配置與高周波（高頻）電源連接的電漿產^Ξ 線圈2 5。而且’作爲電漿處理室2 0是不侷限於上述，也 可任意使用薄片狀電極等。 在以上，將晶圓盒F連結在機殼1的開口 2，卸下芸 部3而將晶圓盒F內及機殼1內相連通。此時，例如在其 中一方的晶圓盒F內是預先收納未處理的被處理基板，而 且另一方的晶圓盒F是預先空出、 從該狀態，藉由多關節機器人1 〇而從其中一方的晶 圓盒F內將未處理的被處理基板取出而送進電漿處理室 20，進行光阻灰化或蝕刻等的預定之處理。處理完成的話 ，以與上述相反的順序從電漿處理室2 0內將被處理基板 取出。此時如果被處理基板是由於高溫的樣態下就收納於 空的晶圓盒F內的話，因爲也會成爲破損的原因，所以移 至存料空間6的承載平台7，使溫度降低之後才收納於空 的晶圓盒F。 在圖示例，是雖然顯示適用於電漿處理裝置之例’但 是本發明也可適用於塗佈裝置。 〔發明效果〕 根據如以上說明的本發明的基板處理裝置的話，因爲 將原本未使用的空間作成存料空間，所以不會使裝置整體 的佔有面積增加。 -9- 1307933 (7) 另外，將存料空間自身的形狀作成使微粒不容易堆積 的形狀，並且因爲積極地進行從存料空間之微粒的去除， 所以可有效地防止微粒污染。 【圖式簡單說明】 第1圖是適用本發明的基板處理裝置之電漿處理裝置 的整體立體圖。 第2圖是同電漿處理裝置的縱剖面圖。1307933 (1) Technical Field of the Invention The present invention relates to plasma treatment or coating of a substrate such as a semiconductor wafer or a glass substrate by etching or photoresist ashing. A substrate processing apparatus such as a liquid barrier. [Prior Art] It is known that in order to perform plasma processing under reduced pressure such as photoresist ash removal, it is known that a multi-joint robot is used from a cassette that houses a plurality of substrates to be processed. The substrate to be processed is fed into the plasma processing chamber one by one, and is produced into a plasma processing apparatus that returns the processed substrate after processing to another wafer using a multi-joint robot. (Patent Document 1) It is known that the above-described treatment is carried out in a clean room in which the number of particles such as floating dust is reduced. However, in order to further suppress particle contamination, the wafer is replaced. In the case of a closed type container called a FOUP (Front Opening Unified Pod), the plasma processing chamber and the multi-joint robot are placed in a casing that prevents intrusion of particles from the outside. The opening of the wafer cassette is hermetically connected to an opening formed in the casing, and a plasma processing apparatus that performs plasma processing in a state of being blocked from the outside is prepared. (Patent Document 2) (Patent Document 1) Japanese Patent Laid-Open No. Hei 10-30183 (Patent Document 2) Japanese Patent Laid-Open No. Hei 11-102951 [0006], paragraph [0013], paragraph [〇〇15], 2 1307933 (2) Fig. 9 is a subject of the invention. The slurry processing chamber is connected to both side surfaces of the octagonal casing, and a vacuum preparation chamber (Load Lock Chamber) having a cooling chamber is connected to the other two side surfaces, and the vacuum preparation chamber is interposed therebetween. Further, a structure for transferring the substrate to be processed is disclosed between the wafer cassette, and in the ninth drawing of Patent Document 2, the plasma processing chamber is connected to both sides of the casing forming the octagonal shape. Attached to the other two sides, and revealed that the cooling chamber is connected to the remaining two sides. In the structure shown in Fig. 1 of Patent Document 2, it is necessary to provide the same number of vacuum chambers as the number of wafer cassettes, and the apparatus becomes large. In addition, the use of the vacuum preparation chamber as a cooling chamber is not possible. The processed substrate is fed into the plasma processing chamber so that efficient processing cannot be performed. Further, the structure shown in Fig. 9 of Patent Document 2 is such that the cooling chamber is deployed on the right and left sides of the apparatus, and the occupied area as the entire apparatus becomes large. In addition, although it is considered that a cooling room is not particularly provided and a standby place is provided in a part of the apparatus, the configuration must be provided in a place that does not interfere with the multi-joint robot' and it is easy to cause discomfort in the device configuration design. . Further, in the case where the cooling chamber is provided, the particles such as dust are likely to accumulate in the cooling chamber over time -5 - (3) 1307933, and this is a concern that the particles are contaminated. [Means for Solving the Problems] In the present invention, the processing unit such as the plasma processing chamber or the coating device and the multi-joint robot are disposed in a casing that prevents intrusion of particles from the outside, and is produced. In the substrate processing apparatus in which the multi-joint robot is disposed to transfer the substrate to be processed between the wafer cassette and the processing unit outside the casing, a pair of crystals are disposed on the front surface of the casing so as to be spaced apart from each other. The opening of the round box and the opening that is hermetically connected in the casing protrude from the lower position of the pair of wafer cassettes from the lower side of the opening, and the front surface of the casing is in the pair of wafer cassettes A bulging portion is formed between the bearing portions, and the inner space of the bulging portion serves as a storage space for cooling or standby of the substrate to be processed. According to the configuration in which the useless space is efficiently utilized and the storage space is arranged, it is possible to provide a device that does not increase the size of the device and has high functions. In particular, the bulging portion is prevented from being formed by making the size of the wafer cassette carrying portion in the front-rear direction and the protruding size of the bulging portion substantially the same. Further, the inclined surface and the bottom surface which are lowered by the ceiling surface of the storage space toward the front surface are inclined surfaces which are formed to be lowered toward the inner side, so that the particles in the storage space are less likely to accumulate. Further, by forming the above-mentioned storage space as a flow path of air, the particles in the storage space can be actively removed. -6 - (4) 1307933 [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Here, Fig. 1 is an overall perspective view showing an example in which the substrate processing apparatus of the present invention is applied to a plasma processing apparatus, Fig. 2 is a longitudinal sectional view of the same plasma processing apparatus, and Fig. 3 is a same as the plasma processing apparatus. Cross section view. In the plasma processing apparatus, the apparatus is housed in a casing 1 which is formed into a substantially rectangular parallelepiped shape as a whole. The casing 1 is constructed to prevent intrusion of particles from the outside. A pair of openings 2 for airtightly connecting the opening of the wafer cassette F and the inside of the casing 1 to the left and right sides of the casing 1 are provided. Further, in the case where it is not coupled to the wafer case F, the opening 2 is closed and the intrusion of the particles 2 into the casing 1 is prevented. In a position lower than the opening 2, the pair of wafer cassette carrying portions 4 are protruded from the casing 1 toward the left and right, and then a bulging portion is formed between the pair of wafer cassette carrying portions 4 5, the bulging portion 5 is formed in the front-rear direction dimension substantially the same as the front-rear direction dimension of the wafer cassette carrying portion 4, and the inner space is used as the storage space 6 for cooling or standby of the substrate to be processed. As shown in Fig. 2, the storage space 6 is provided with a plurality of layers of the platform 7 on the inside, and the ceiling surface 6a is formed with an inclined surface that is lowered toward the front, and the bottom surface 6b is formed with a slope that decreases toward the inside. The surface forms a structure in which particles do not adhere to the inner surface. -7- (5) 1307933 The above-described carrying platform 7 is provided with a top plate 7a directly above the carrying platform 7 by taking out and placing the substrate to be processed in the upper layer so that fine particles or the like are not dropped to the lower layer. Further, in the carrier platform 7, the sample wafers of the necessary number are often reserved in advance. When the processing state of the Keeung reverse processing apparatus is started and the processing state is unstable, the sample wafer is carried into the processing apparatus instead of being processed, and the processing state is stabilized and then carried out and carried on the carrier platform 7. Further, an exhaust passage 8 is provided in an outer portion of the bulging portion 5, and the exhaust passage 8 and the storage space 6 are connected to each other via a hole portion 9 formed in a wall surface, and are formed in the storage space 6. Actively let the air out. The hole portion 9 is provided corresponding to each of the carrier platforms 7. On the other hand, the multi-joint robot 10 and the plasma processing chamber 20 are disposed in the casing 1. The articulated robot 10 includes a main body 11 and two multi-joint arms 12, and the main body 11 is rotatable with the vertical axis as a center, and the multi-joint arm 12 is moved in accordance with the adjustment operation in addition to the lifting operation. The telescopic operation is performed, and the multi-joint robot 1 is integrally moved along the guide rail 13 to a position facing the left and right plasma processing chambers 20 by driving a cylinder unit or the like (not shown). . Moreover, the configuration of the articulated robot 10 is not limited to the above. In the plasma processing chamber 20, the sample introduction chamber 21 is attached, and the sample introduction chamber 21 is interposed so that the substrate to be processed can be carried in and out. That is, a delivery arm is also provided in the sample introduction chamber 21, and the substrate is transferred to the substrate to be processed by the multi-joint robot 1A. Further, in the plasma processing chamber 20, the reactive gas introduction portion 23 is provided with -8-(6) 1307933 in the upper portion of the quartz chamber 22 for plasma generation, and a faraday shield 24 is provided on the outer periphery of the quartz chamber 22. On the outside of the Faraday shield 24, a plasma coil 25 connected to a high-frequency (high-frequency) power source is disposed. Further, the plasma processing chamber 20 is not limited to the above, and a sheet electrode or the like may be used arbitrarily. In the above, the wafer cassette F is coupled to the opening 2 of the casing 1, and the dam portion 3 is detached to communicate the inside of the wafer cassette F with the inside of the casing 1. In this case, for example, in one of the wafer cassettes F, the unprocessed substrate to be processed is stored in advance, and the other wafer cassette F is vacated in advance, and from the state, the multi-joint robot 1 is detached therefrom. The unprocessed substrate to be processed is taken out in one of the wafer cassettes F and sent to the plasma processing chamber 20 to perform predetermined processing such as photoresist ashing or etching. When the processing is completed, the substrate to be processed is taken out from the plasma processing chamber 20 in the reverse order to the above. At this time, if the substrate to be processed is stored in the empty wafer cassette F due to the high temperature, it may be damaged, so it is moved to the load platform 7 of the storage space 6, and the temperature is lowered. Stored in an empty wafer cassette F. In the example of the drawing, the example is applied to a plasma processing apparatus, but the present invention is also applicable to a coating apparatus. [Effect of the Invention] According to the substrate processing apparatus of the present invention as described above, since the space which is not originally used is made into the storage space, the area occupied by the entire apparatus is not increased. -9-1307933 (7) Further, the shape of the storage space itself is made into a shape in which particles are not easily deposited, and since the removal of particles from the storage space is actively performed, particle contamination can be effectively prevented. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an overall perspective view of a plasma processing apparatus to which a substrate processing apparatus of the present invention is applied. Fig. 2 is a longitudinal sectional view of the same plasma processing apparatus.
第3圖是同電漿處理裝置的橫剖面圖。 〔符號說明〕 1…機殼 2…開口 3…蓋部 4…晶圓盒承載部 5…膨出部Figure 3 is a cross-sectional view of the same plasma processing apparatus. [Description of symbols] 1... Enclosure 2... Opening 3... Cover part 4...Cassette holder 5: Bulging
6···存料空間 6a…存料空間的天花板面 6b…存料空間的底面 7···承載平台 7a…頂板 8…排氣通路 9…孔部 10…多關節機器人 -10- 1307933 (8) 1 1…機器人本體 12…機器人的臂 1 3…導軌 20…電漿處理室 21…試料導入室 22…石英室 23…反應性氣體導入部 2 4…法拉第屏蔽 25…電漿產生用線圈 F…晶圓盒6···Storage space 6a... Ceiling surface 6b of storage space... Bottom surface of storage space 7···Loading platform 7a... Top plate 8...Exhaust passage 9... Hole 10...Multi-joint robot-10-1307933 ( 8) 1 1...robot body 12...arm arm 1 3...rail 20...plasma processing chamber 21...sample introduction chamber 22...quartz chamber 23...reactive gas introduction unit 2 4...Faraday shield 25...plasma generation coil F...wafer box