TW200428561A - A substrate treatment apparatus - Google Patents
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- TW200428561A TW200428561A TW92132786A TW92132786A TW200428561A TW 200428561 A TW200428561 A TW 200428561A TW 92132786 A TW92132786 A TW 92132786A TW 92132786 A TW92132786 A TW 92132786A TW 200428561 A TW200428561 A TW 200428561A
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200428561 (1) 玖、發明說明 【發明所屬之技術領域】 本發明是關於對半導體晶圓或玻璃基板等的被處理基 板施加蝕刻或光阻去灰(ashing )等的電漿處理、塗佈光 阻液等的基板處理裝置。 【先前技術】 已知有爲了更有效率地進行在光阻去灰等的減壓下之 電漿處理,因此從收納複數枚被處理基板的晶圓匣( cassette )使用多關節機器人而一枚一枚地將被處理基板 送進電漿處理室,而且製作成使用多關節機器人將處理完 成後的被處理基板送回到別的晶圓匣之電漿處理裝置。( 專利文獻1 ) 已知有上述處理是雖然在已減少浮游的塵埃等的微粒 (particle)數的無塵室(clean room)內進行,但是在最 近爲了更抑制微粒污染,因此將晶圓匣自身放入被稱爲晶 圓盒(FOUP: Front Opening Unified Pod)的密閉型的容 器內,另一方面,將電漿處理室及多關節機器人配置在防 止從外部的微粒之侵入的機殼內,將上述晶圓盒的開口氣 密地連結在該機殼所形成的開口,製作成從外部遮斷的狀 態下進行電漿處理的電漿處理裝置。(專利文獻2 ) (專利文獻1 ) 日本特開平1 0 - 3 0 1 8 3號 第1圖 (專利文獻2) 日本特開平11-102951號 段落【0006】、段落【〇013】、段落【〇〇15】、第2 (2) (2)200428561 圖、第9圖 【發明內容】 〔發明所欲解決之課題〕 在專利文獻2的第1圖是以平面看來在形成八角形的 機殼內配置多關節機器人,將電漿處理室連結在形成該八 角形的機殼的兩側面,另外將兼具冷卻室的真空預備室( 試料導入室(Load Lock Chamber))連結在其他的兩側 面,在隔著該真空預備室而與晶圓盒之間揭示有進行被處 理基板的交接之構造,另外在專利文獻2的第9圖,將電 漿處理室連結在形成八角形的機殻的兩側面,另外將晶圓 盒連結在其他的兩側面,而且揭示有將冷卻室連結在剩下 的兩側面。 在專利文獻2的第1圖所示的構造,是必須要設置與 晶圓盒之數同數的真空預備室導致裝置變大,另外將真空 預備室作爲冷卻室而使用之間是不能將其他的被處理基板 送進電漿處理室以致不能進行有效率之處理。 另外專利文獻2的第9圖所示的構造,是冷卻室展開 於裝置的左右,導致作爲裝置整體的佔有面積變大。 另外’雖然也有考慮不特別地設置冷卻室而在裝置的 一部份設置待機場所,但是在該構造是必須要設置在與多 關節機器人不干涉的地方,而且在裝置配置設計上容易產 生不適處。 而且’在設置冷卻室的情況,塵埃等的微粒是經時性 -5- (3) 200428561 地容易堆積在該冷卻室內,而且此爲具有牽連微粒污染的 疑慮。 〔用以解決課題之手段〕200428561 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to a plasma treatment for applying etching, photoresist, and ashing to a substrate to be processed, such as a semiconductor wafer or a glass substrate, and applying light. Substrate processing equipment such as a liquid barrier. [Prior art] In order to perform plasma processing under reduced pressure such as photoresist deashing more efficiently, it is known to use a multi-joint robot from a cassette containing a plurality of substrates to be processed. The substrates to be processed are fed into the plasma processing chamber one by one, and a plasma processing apparatus is used to send the processed substrates to the other wafer cassettes using a multi-joint robot. (Patent Document 1) Although it is known that the above-mentioned processing is performed in a clean room in which the number of particles such as floating dust has been reduced, recently, in order to further suppress particulate contamination, a wafer cassette has been It is placed in a closed container called a FOUP: Front Opening Unified Pod. On the other hand, the plasma processing chamber and the articulated robot are placed in a cabinet that prevents intrusion of particles from the outside. A plasma processing device that plasma-tightly connects the opening of the wafer cassette to the opening formed by the casing to form a plasma treatment in a state of being interrupted from the outside is manufactured. (Patent Document 2) (Patent Document 1) Japanese Unexamined Patent Publication No. 1 0-3 0 1 8 3 Figure 1 (Patent Document 2) Japanese Unexamined Patent Publication No. 11-102951 paragraph [0006], paragraph [〇013], paragraph [ [0015], Figure 2 (2) (2) 200428561, Figure 9 [Contents of the Invention] [Questions to be Solved by the Invention] The first figure in Patent Document 2 is an octagonal machine in plan view. A multi-joint robot is arranged in the casing, and a plasma processing chamber is connected to both sides of the octagonal casing. In addition, a vacuum preparation chamber (Load Lock Chamber) that also serves as a cooling chamber is connected to the other two On the side, a structure for transferring a substrate to be processed is disclosed between the vacuum preparation chamber and the wafer cassette. In addition, in FIG. 9 of Patent Document 2, a plasma processing chamber is connected to an octagonal casing. In addition, the wafer box is connected to the other two sides, and the cooling chamber is connected to the remaining two sides. In the structure shown in FIG. 1 of Patent Document 2, it is necessary to provide the same number of vacuum preparation chambers as the number of wafer cassettes, which leads to an increase in the size of the device, and it is not possible to use other vacuum preparation chambers as cooling chambers. The substrate to be processed is fed into the plasma processing chamber so that efficient processing cannot be performed. In addition, in the structure shown in Fig. 9 of Patent Document 2, the cooling chamber is extended to the left and right of the device, and the occupied area as a whole of the device becomes large. In addition, 'Although it is considered that a cooling room is not provided and a standby place is installed in a part of the device, this structure must be installed in a place that does not interfere with the multi-joint robot, and it is easy to cause discomfort in the design of the device configuration. . Moreover, when a cooling chamber is installed, particles such as dust are easily accumulated in the cooling chamber over time. This is a concern that the particles may be contaminated. [Means for solving problems]
解決上述課題的本發明,是將電漿處理室或塗佈裝置 等的處理部及多關節機器人配置在防止從外部的微粒之侵 入的機殼內,而且製作成藉由該多關節機器人來進行配置 在機殼外的晶圓盒與處理部之間的被處理基板之交接的基 板處理裝置之中,在上述機殼的正面朝左右離間而設置一 對將晶圓盒的開口及機殼內氣密地連結的開口,在比該開 口從更下方位置使一對晶圓盒承載部朝左右離間而突出, 另外在機殼的正面於上述一對晶圓盒承載部之間形成膨出 部,而且將該膨出部的內側空間作成被處理基板的冷卻或 待機之用的存料空間。The present invention that solves the above-mentioned problems is that a processing unit such as a plasma processing chamber, a coating device, and the articulated robot are arranged in a casing that prevents intrusion of particles from the outside, and is manufactured by the articulated robot. In a substrate processing apparatus for transferring a substrate to be processed between a wafer box and a processing unit disposed outside the case, a pair of openings for the wafer box and the inside of the case are provided on the front side of the case to be spaced left and right. An air-tightly connected opening that projects a pair of wafer cassette receiving portions from left to right and spaced from below the opening, and forms a bulging portion between the front of the cabinet and the pair of wafer cassette receiving portions In addition, the space inside the bulging portion is used as a storage space for cooling or waiting for the substrate to be processed.
根據由於作成上述構成來將無用空間有效率地利用而 配置存料空間’就可提供不將裝置大型化而且具有高功能 的裝置。 尤其,利用將上述晶圓盒承載部的前後方向尺寸及上 述膨出部的突出尺寸作成大致相同,來使膨出部不形成妨 礙。 另外,藉由將上述存料空間的天花板面朝向面前而下 降的傾斜面、底面是作成朝向內側而下降的傾斜面,來使 在存料空間內的微粒不容易堆積。而且藉由將上述存料空 間作成空氣的流路,就可積極地將存料空間內的微粒排除 -6- 200428561By arranging the storage space efficiently by using the useless space efficiently by constructing the above-mentioned configuration, it is possible to provide a device having a high function without increasing the size of the device. In particular, the front-to-back dimension of the wafer cassette receiving portion and the protruding dimension of the bulged portion are made substantially the same so that the bulged portion is not hindered. In addition, the inclined surface that lowers the ceiling surface of the storage space toward the front and the bottom surface is an inclined surface that descends toward the inside to prevent particles from accumulating in the storage space. And by making the above-mentioned storage space into an air flow path, the particles in the storage space can be actively removed -6- 200428561
【實施方式】 以下根據添附圖面說明本發明的實施方式。此處,第 1圖是將本發明的基板處理裝置適用在電漿處理裝置之例 的全體立體圖,第2圖是同電漿處理裝置的縱剖面圖,第 3圖是同電漿處理裝置的橫剖面圖。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. Here, FIG. 1 is an overall perspective view of an example in which the substrate processing apparatus of the present invention is applied to a plasma processing apparatus, FIG. 2 is a longitudinal sectional view of the same plasma processing apparatus, and FIG. 3 is a view of the same plasma processing apparatus. Cross section.
電漿處理裝置是將機器收納在整體形成大致長方體狀 的機殼1內。該機殼1是形成防止從外部的微粒之侵入的 構造。 在機殼1的正面朝左右離間而設置有一對將晶圓盒F 的開口及機殼1內氣密地連結的開口 2。而且,在未與晶 圓盒F連結的情況,開口 2是以蓋部3來封閉而且防止向 機殻1內的微粒之侵入。The plasma processing apparatus is housed in a cabinet 1 having a substantially rectangular parallelepiped shape as a whole. The cabinet 1 has a structure that prevents intrusion of particles from the outside. A pair of openings for airtightly connecting the opening of the wafer cassette F and the inside of the case 1 are provided on the front surface of the case 1 so as to be spaced from left to right. When the wafer case F is not connected, the opening 2 is closed by the lid portion 3 to prevent the intrusion of particles into the housing 1.
在比上述開口 2更下方位置之中,從機殼1使一對晶 圓盒承載部4朝左右離間而突出,然後,在此等一對晶圓 盒承載部4之間形成有膨出部5,該膨出部5是作成前後 方向尺寸與上述晶圓盒承載部4的前後方向尺寸大致相同 ,將其內側空間作爲被處理基板的冷卻或待機之用的存料 空間6。 存料空間6是如第2圖所示,在內部朝上下設置有複 數層承載平台7,另外天花板面6a形成有朝向面前而下 降的傾斜面,底面6b是形成有朝向內側而下降的傾斜面 ,形成微粒不會附著在內面的構造。 (5) (5)200428561 上述承載平台7是藉由在上層的被處理基板之取出和 放入以使微粒等不掉落至下層的方式,在承載平台7的正 上方配置頂板7 a。而且,在承載平台7是經常地預先使 按照必要之枚數的樣本晶圓待機也可。該樣本晶圓是在基 板處理裝置運轉開始而處理狀態不穩定時,作爲被處理基 板的替代而被搬入到處理裝置內,而且處理狀態穩定之後 是被搬出而承載於承載平台7。 另外在膨出部5的外側部是設置有排氣通路8,該排 氣通路8及上述存料空間6是隔著形成在壁面的孔部9並 相連通,製作成從存料空間6內積極地讓空氣排出。孔部 9是對應於各承載平台7所設置。 另一方面,在機殼1內配置有多關節機器人10及電 漿處理室20。多關節機器人10是具備本體11及兩支多 關節臂1 2,本體1 1是將垂直軸作爲中心而可作成旋轉自 如,多關節臂1 2是除了升降動作之外依照調機位置( teaching)而進行伸縮動作,而且多關節機器人1〇整體是 藉由未圖示的缸體單元(cylinder unit)等的驅動而沿著 導軌1 3並作成可移動到相對向於左右的電漿處理室2 0的 位置。而且,多關節機器人1 〇的構造是不侷限於上述。 另外,電漿處理室20是附設試料導入室21,隔著該 試料導入室2 1,而製作成能進彳了被處理基板的搬入及搬 出。亦即,在試料導入室21內也設置有交接臂,藉由該 臂而進行與多關節機器人1 0之間的被處理基板的交接。 另外,電漿處理室2 0是將反應性氣體導入部2 3設置 -8- (6) (6)200428561 在電漿產生用的石英室22的上部,在石英室22的外周是 設置法拉第屏蔽(faraday shield) 2 4,在該法拉第屏蔽 24的外側配置與高周波(高頻)電源連接的電漿產生用 線圈2 5。而且,作爲電漿處理室2 0是不侷限於上述,也 可任意使用薄片狀電極等。 在以上,將晶圓盒F連結在機殼1的開口 2,卸下蓋 部3而將晶圓盒F內及機殼1內相連通。此時,例如在其 中一方的晶圓盒F內是預先收納未處理的被處理基板,而 且另一方的晶圓盒F是預先空出。 從該狀態,藉由多關節機器人1 0而從其中一方的晶 圓盒F內將未處理的被處理基板取出而送進電漿處理室 2 〇,進行光阻灰化或蝕刻等的預定之處理。處理完成的話 ’以與上述相反的順序從電漿處理室2 0內將被處理基板 取出。此時如果被處理基板是由於高溫的樣態下就收納於 空的晶圓盒F內的話,因爲也會成爲破損的原因,所以移 至存料空間6的承載平台7,使溫度降低之後才收納於空 的晶圓盒F。 在圖示例,是雖然顯示適用於電漿處理裝置之例,但 是本發明也可適用於塗佈裝置。 〔發明效果〕 根據如以上說明的本發明的基板處理裝置的話,因爲 將原本未使用的空間作成存料空間,所以不會使裝置整體 的佔有面積增加。 (7) (7)200428561 另外,將存料空間自身的形狀作成使微粒不容易堆積 的形狀,並且因爲積極地進行從存料空間之微粒的去除, 所以可有效地防止微粒污染。 【圖式簡單說明】 第1圖是適用本發明的基板處理裝置之電漿處理裝置 的整體立體圖。 第2圖是同電漿處理裝置的縱剖面圖。 第3圖是同電漿處理裝置的橫剖面圖。 〔符號說明〕 1…機殼 2…開口 3…蓋咅p 4…晶圓盒承載部In a position lower than the above-mentioned opening 2, a pair of wafer cassette carrying portions 4 are protruded from the housing 1 toward left and right, and then a bulging portion is formed between the pair of wafer cassette carrying portions 4. 5. The size of the bulging portion 5 is substantially the same as the size of the wafer cassette receiving portion 4 in the front-back direction, and the inner space is used as a storage space 6 for cooling or waiting for the substrate to be processed. As shown in FIG. 2, the storage space 6 is provided with a plurality of layers of supporting platforms 7 upward and downward. The ceiling surface 6 a is formed with an inclined surface that descends toward the front, and the bottom surface 6 b is formed with an inclined surface that descends toward the inside. , Forming a structure where particles do not adhere to the inner surface. (5) (5) 200428561 The above-mentioned load-bearing platform 7 is configured such that the top plate 7a is arranged directly above the load-bearing platform 7 by taking out and placing the substrate to be processed on the upper layer so that particles and the like do not fall to the lower layer. In addition, the number of sample wafers on the carrier platform 7 may be always standby in advance. This sample wafer is transferred into the processing apparatus as a substitute for the substrate to be processed when the substrate processing apparatus starts operation and the processing state is unstable. After the processing state is stable, the sample wafer is carried out and carried on the carrying platform 7. In addition, an exhaust passage 8 is provided on an outer portion of the bulging portion 5. The exhaust passage 8 and the storage space 6 are communicated with each other through a hole portion 9 formed on a wall surface, and are manufactured from the storage space 6. Let the air out actively. The hole portion 9 is provided corresponding to each load platform 7. On the other hand, an articulated robot 10 and a plasma processing chamber 20 are arranged in the casing 1. The articulated robot 10 is provided with a main body 11 and two articulated arms 12. The main body 11 is rotatable with a vertical axis as a center, and the articulated arm 12 is adjusted in accordance with a tuning position in addition to a lifting operation. Telescopic movement is performed, and the articulated robot 10 as a whole is driven along a guide rail 13 by a cylinder unit (not shown) and the like, and is movable to a plasma processing chamber 2 facing left and right. 0 position. The structure of the articulated robot 10 is not limited to the above. The plasma processing chamber 20 is provided with a sample introduction chamber 21, and the sample introduction chamber 21 is interposed therebetween, and is manufactured so that the substrate to be processed can be carried in and out. That is, a transfer arm is also provided in the sample introduction chamber 21, and transfer of the substrate to be processed with the articulated robot 10 is performed by the arm. In addition, the plasma processing chamber 20 is provided with a reactive gas introduction section 2 3-(6) (6) 200428561 The upper part of the quartz chamber 22 for generating plasma is provided with a Faraday shield on the outer periphery of the quartz chamber 22 (Faraday shield) 24. A plasma generating coil 25 connected to a high frequency (high frequency) power source is arranged outside the Faraday shield 24. The plasma processing chamber 20 is not limited to the above, and a sheet-shaped electrode or the like may be used arbitrarily. In the above, the wafer cassette F is connected to the opening 2 of the casing 1, and the cover 3 is removed to communicate the inside of the wafer cassette F and the casing 1. At this time, for example, one of the wafer cassettes F contains unprocessed substrates to be processed in advance, and the other wafer cassette F is vacated in advance. From this state, the unprocessed substrate is taken out of one of the wafer cassettes F by the multi-joint robot 10 and sent to the plasma processing chamber 20 for predetermined photoresist ashing or etching. deal with. When the processing is completed, the substrate to be processed is taken out of the plasma processing chamber 20 in the reverse order. At this time, if the substrate to be processed is stored in the empty wafer cassette F due to the high temperature, it will also cause damage, so it is moved to the loading platform 7 in the storage space 6 to reduce the temperature. Stored in an empty wafer cassette F. Although the example shown in the figure shows an example applicable to a plasma processing apparatus, the present invention can also be applied to a coating apparatus. [Effects of the Invention] According to the substrate processing apparatus of the present invention as described above, since an unused space is used as a storage space, the occupied area of the entire apparatus is not increased. (7) (7) 200428561 In addition, the shape of the storage space itself is made to prevent particles from accumulating easily, and since the particles are actively removed from the storage space, the pollution of the particles can be effectively prevented. [Brief description of the drawings] Fig. 1 is an overall perspective view of a plasma processing apparatus to which the substrate processing apparatus of the present invention is applied. Fig. 2 is a longitudinal sectional view of the plasma processing apparatus. Fig. 3 is a cross-sectional view of the plasma processing apparatus. 〔Explanation of Symbols〕 1 ... case 2 ... opening 3 ... cover p 4 ... wafer case carrying section
6···存料空間 6a…存料空間的天花板面 6b…存料空間的底面 7…承載平台 頂板 8…排氣通路 9…孔部 1〇…多關節機器人 •10- (8) (8)200428561 1 1…機器人本體 12…機器人的臂 13…導軌 20…電漿處理室 21…試料導入室 22…石英室 23…反應性氣體導入部 24…法拉第屏蔽 25…電漿產生用線圈 F…晶圓盒6 ··· Storage space 6a ... Ceiling surface of storage space 6b ... Bottom surface of storage space 7 ... Top plate of loading platform 8 ... Exhaust passage 9 ... Hole section 10 ... Multi-joint robot • 10- (8) (8 200428561 1 1 ... Robot body 12 ... Robot arm 13 ... Guide rail 20 ... Plasma processing chamber 21 ... Sample introduction chamber 22 ... Quartz chamber 23 ... Reactive gas introduction portion 24 ... Faraday shield 25 ... Plasma generation coil F ... Wafer box
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JP2002345984A JP2004179519A (en) | 2002-11-28 | 2002-11-28 | Substrate processor |
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US7467916B2 (en) * | 2005-03-08 | 2008-12-23 | Asm Japan K.K. | Semiconductor-manufacturing apparatus equipped with cooling stage and semiconductor-manufacturing method using same |
WO2012133441A1 (en) * | 2011-03-28 | 2012-10-04 | 株式会社日立国際電気 | Substrate processing device, method for manufacturing semiconductor device, and substrate processing method |
JP5854741B2 (en) * | 2011-10-04 | 2016-02-09 | 株式会社アルバック | Substrate processing equipment |
JP5794194B2 (en) * | 2012-04-19 | 2015-10-14 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP6555091B2 (en) * | 2015-11-10 | 2019-08-07 | シンフォニアテクノロジー株式会社 | Robot transfer device |
US11373891B2 (en) * | 2018-10-26 | 2022-06-28 | Applied Materials, Inc. | Front-ducted equipment front end modules, side storage pods, and methods of operating the same |
-
2002
- 2002-11-28 JP JP2002345984A patent/JP2004179519A/en active Pending
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2003
- 2003-11-21 TW TW92132786A patent/TWI307933B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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JP2004179519A (en) | 2004-06-24 |
TWI307933B (en) | 2009-03-21 |
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