KR101822554B1 - Front Opening Unified Pod - Google Patents

Abstract

The present invention relates to a wafer storage container, wherein a wafer storage container is formed as a separate space independent of a storage chamber, a gas inlet chamber, and a gas discharge chamber, and when the wafer storage container is transferred to the load port, The present invention relates to a wafer storage container that efficiently removes fumes remaining on the surface of a wafer by injecting / exhausting purge gas through a partition wall inside the chamber.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer storage container, and more particularly, to a wafer storage container that removes fumes remaining on the surface of a wafer by injecting purge gas when coupled with a load port.

Generally, a semiconductor device is manufactured by selectively and repeatedly performing a deposition process, a polishing process, a photolithography process, an etching process, an ion implantation process, a cleaning process, an inspection process, and a heat treatment process on a wafer, The wafer is then transported to the specific location required by each process.

In the semiconductor manufacturing process, the processed wafer is stored in a wafer storage container such as a front opening unified pod (FOUP) so as not to be contaminated or damaged by external contaminants and shocks during storage and transportation as high precision articles Transfer.

In this case, the process gas used in the process and fumes as a by-product in the process are not removed but stored in the wafer storage container while remaining on the surface of the wafer.

However, if such residues adhere to the surface of the wafer, it may lead to contamination of the semiconductor manufacturing equipment and bad etch pattern. As a result, the reliability of the product may deteriorate. .

As described above, a wafer storage container for removing fumes remaining on the surface of a wafer is known from Patent Publication No. 2010-0134033.

1 and 2, the container portion 64 includes a shell 65 and a closed top, a closed bottom surface, a closed seating surface, a closed front surface, an open front surface, and a closed rear surface 67).

On the open front, the door 24 can seal the container portion 64.

Inside the usable portion 64, a wafer shelf in which a plurality of wafers are accommodated can be provided.

The kinematic coupling plate 74 is located at the bottom of the container and includes a suitable opening for receiving the front and rear grommets 77 at the rear port 54. The opening extends through the shell 65.

The container portion includes two rearward apertures (80) extending outwardly from the interior of the wafer container.

A tubular environmental control element 78 comprised of a tower element is inserted into the gap 80 from the interior of the vessel portion 64.

The tubular element includes a containment portion 81, an offset portion 83, and a port portion 85.

The elastomeric grommet 77 may be sealingly positioned in the lower region (not 94) of the tubular element and the check valve 62 may be located there.

A cylindrical filter and / or getter media material 10 may be included in the receiving portion and configured to fit within the tubular element.

The tubular element includes a plurality of axially-extending gaps 11, which are made up of exposed horizontal slots.

The tubular element may also include a slit for each wafer and emit purge gas to the surface of each wafer at the slit position.

However, the conventional wafer storage container has a problem that the gas is not uniformly flowed in the region where the wafer is mounted, because the region where the gas is injected, the region where the wafer is mounted, and the region where the gas is exhausted do not form independent spaces .

In addition, a yarn area in which the purge gas is not sprayed can be formed on the wafer stored in the wafer storage container, and since the purge gas is sprayed by the tubular element installed vertically, the purge gas is concentratedly injected There is a problem in that it can not be done.

Korea Patent Publication No. 2010-0134033

Disclosure of the Invention The present invention has been conceived to solve the above-described problems, and it is an object of the present invention to provide a wafer storage container in which a separate space independent of the storage chamber, the gas inlet chamber, and the gas discharge chamber is formed and purge gas is injected / discharged through the partition wall inside the chamber , And effectively removes fumes remaining on the surface of the wafer.

A wafer storage container according to one aspect of the present invention includes: a storage compartment in which a front surface is openable, a first partition wall is formed on a left side, a second partition wall is formed on a right side, and a third partition wall is formed on a rear side; A first hole formed in the first partition wall in the horizontal direction and in the vertical direction to communicate with the gas; And a second hole formed in the second separating wall in a plurality of directions in a horizontal direction and a vertical direction, And a third hole formed in the third partition wall in the horizontal direction and in the vertical direction for gas communication; And a plurality of plates arranged at a plurality of positions so as to be spaced apart from each other to support the wafer, wherein the first holes formed in the plurality of the horizontal directions are arranged in an upward, downward Wherein the first hole has an opening area and the upper and lower distance of the opening area is smaller than the distance between the adjacent upper and lower plates and the second hole Are located between upper and lower adjacent plates of the plurality of plates provided on the second separation wall, and the second hole has an opening area, and the upper and lower distances of the opening areas are different between the upper and lower adjacent plates And a third hole formed in the plurality of horizontal directions is smaller than a spacing of the plurality of plates provided on the third partition wall, And the third hole has an opening area, and the upper and lower distance of the opening area is smaller than the separation distance between the upper and lower adjacent plates.

According to the wafer storage container of the present invention as described above, the following effects can be obtained.

The purge gas is injected through the separation wall having the hole located between the gas injection chamber and the storage chamber, unlike the conventional wafer storage container, the purge gas is not concentratedly injected into a predetermined region, It is possible to remove the remaining fumes on the surface of the substrate.

A gas inflow chamber is located at both sides of the storage chamber and a gas exhaust chamber is located at the back side of the storage chamber so that purge gas is injected from both side walls of the storage chamber to remove fumes of the wafer, The purge gas is exhausted through the gas exhaust chamber located on the side of the wafer storage container, so that the purge gas injected from both sides of the front face of the wafer storage container flows in the rear direction, and the fumes of the wafer can be efficiently removed without a warp region.

A gas inlet chamber is located at one side of the storage chamber and a gas exhaust chamber is located at the opposite side of the gas inlet chamber so that a flow of purge gas is generated in one direction to allow fume and purge gas remaining on the surface of the wafer, It can be exhausted smoothly.

The first gas inlet chamber is located at one side of the storage chamber and the second gas inlet chamber and the gas exhaust chamber are located at the opposite side of the storage chamber to increase the amount of purge gas injected into the storage chamber, The fume remaining on the surface can be removed.

A plurality of holes formed in the partition wall are formed and the opening area is increased as the holes are moved to the upper portion so that the amount of purge gas flowing through the gas inlet holes on the bottom surface of the gas inlet chamber increases By injecting the purge gas into the storage chamber, the purge gas can be injected uniformly into the upper and lower portions by preventing the purge gas from being injected into only the lower portion.

A plurality of holes are formed in the partition wall and a pipe having a length is provided in the hole so that purge gas injected from the gas inlet chamber to the storage chamber is injected through the pipe and has a straightness in the longitudinal direction of the pipe The purge gas can be injected further into the storage chamber even if the purge gas is supplied to the gas injection chamber through the gas inlet hole with a small pressure.

The length of the pipe is shortened toward the upper part of the separating wall and is provided in the hole so that the purge gas is prevented from being injected into only the lower part of the compartment and the purge gas can be uniformly injected into the upper part and the lower part.

A plate communicating with the gas injection chamber and spraying the gas to the housing chamber is provided on the side of the housing chamber and a plurality of injection holes are formed in the plate so that purge gas is injected closer to the wafer housed in the housing chamber , It is possible to efficiently remove fumes remaining on the surface of the wafer.

Since the plate has protrusions protruding toward the wafer toward the front of the storage chamber and the injection ports are formed in the protrusions, the purge gas can be injected at various angles, so that the fumes remaining on the wafer can be efficiently removed without a warp region .

1 is a plan view of a conventional wafer storage container.
Fig. 2 is a cross-sectional view taken along the line 13-13 in Fig. 1
3 is a perspective view of a wafer storage container according to a first embodiment of the present invention;
Figure 4 is a plan view of Figure 3;
5 is a plan view of a wafer storage container according to a second embodiment of the present invention.
6 is a plan view of a wafer storage container according to a third embodiment of the present invention.
7 is an enlarged view showing a change in the opening area of the holes in Figs. 3 to 6; Fig.
8 is a perspective view showing another form of the hole of Fig. 3; Fig.
9 is an enlarged view showing a change in length of the hole of Fig. 8;
10 is an enlarged view showing a pipe provided in a hole of a separation wall;
Fig. 11 is a perspective view showing a 1-1 embodiment of the plate of Figs. 3 to 6; Fig.
FIG. 12 is a perspective view showing the first and second embodiments of the plates of FIGS. 3 to 6; FIG.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

Fig. 3 is a perspective view of the wafer storage container according to the first embodiment of the present invention, Fig. 4 is a plan view of Fig. 3, Fig. 5 is a plan view of the wafer storage container according to the second embodiment of the present invention, Fig. 7 is an enlarged view showing a change in the opening area of the holes in Figs. 3 to 6, Fig. 8 is a view showing another form of the hole in Fig. 3 Fig. 9 is an enlarged view showing a change in the length of the hole of Fig. 8, Fig. 10 is an enlarged view showing a pipe provided in the hole of the separation wall, and Fig. 11 is a cross- FIG. 12 is a perspective view showing the first and second embodiments of the plates of FIGS. 3 to 6; FIG.

3 and 4, the wafer storage container 100 according to the first embodiment of the present invention includes a storage chamber 110 in which a wafer w is housed. A first gas inlet chamber 120 located on the left side of the housing chamber 110, a second gas inlet chamber 130 located on the right side of the housing chamber 110, a gas located on the back side of the housing chamber 110, And an exhaust chamber (140).

The first and second partition walls 160 and 160 are formed on the left and right sides of the housing chamber 110, respectively. The first and second partition walls 160 and 160 are formed on the left and right sides, respectively, A third partition wall 170 is formed.

The first and second gas inlet chambers 120 and 130 are located on the left and right sides of the housing chamber 110 respectively and the gas exhaust chamber 140 is located on the rear side of the housing chamber 110. The first and second gas inlet chambers 120 and 130 The first to third separation walls 150, 160 and 170 are formed between the accommodating chamber 110 and the first and second gas inlet chambers 120, 130 and the gas exhaust chamber 140 form a separate space independent of each other.

3 and 4, the wafer W is stored in the storage chamber 110. In this case, the wafer W is supported by providing support members on both sides of the inside of the storage chamber 110, A plurality of plates 200 stacked on both sides of the interior of the chamber 110 may be provided to support the wafer w.

Further, when the plate 200 is installed in the housing chamber 110, purge gas may be injected through the plate 200, and a detailed description thereof will be described later.

The first gas inlet chamber 120 is located on the left side of the storage chamber 110, and the upper and lower surfaces, the front surface, the rear surface, and the left surface are closed, and the first separation wall 150 is formed on the right surface.

A first gas inlet hole (not shown) for introducing the purge gas supplied from the supply port of the load port when the wafer storage container 100 is coupled with a load port (not shown) (Not shown).

The second gas inlet chamber 130 is located on the right side of the storage chamber 110 and has upper and lower portions, a front surface, a rear surface and a right surface closed, and a second separation wall 160 formed on the left surface.

A second gas inlet hole 131 for introducing the purge gas supplied from the supply port of the load port when the wafer storage container 100 is coupled with the load port is formed on the bottom surface of the inner front surface of the second gas inlet chamber 130. Respectively.

The gas exhaust chamber 140 is located on the rear side of the housing chamber 110, and the upper, lower, rear, left and right sides are closed, and the third partition wall 170 is formed on the front face.

The wafer storage container 100 is provided with left and right bottom surfaces on the left and right sides of the gas exhaust chamber 140 for exhausting the fumes and purge gas of the wafer W stored in the storage chamber 110 when the wafer storage container 100 is combined with the load port. And gas exhaust holes 141 and 142, respectively.

The positions and the number of the first and second gas inflow holes 121 and 131 and the first and second gas exhaust holes 141 and 142 are set such that the supply port of the load port to which the wafer accommodating container 100 is coupled, It goes without saying that it depends on the form.

First to third holes 151, 161, and 171 are formed in the first to third separation walls 150, 160, and 160, respectively.

The first and second holes 151 and 161 serve to inject purge gas into the storage chamber 110 from the first and second gas inlet chambers 120 and 130.

The third hole 171 serves to discharge the purge gas and the fume gas injected into the storage chamber 110 from the plate 200 to the gas exhaust chamber 140 to be described later.

The first through third holes 151, 161, and 171 may be formed in a plurality of holes.

That is, a plurality of first and second holes 151 and 161 may be formed in the horizontal direction, and a plurality of the first and second holes 151 and 161 may be formed in the vertical direction according to the number of the wafers w housed in the housing chamber 100.

The third hole 171 may be formed in the horizontal direction and in the vertical direction as in the first and second holes 151 and 161 depending on the amount of the purge gas and the fume injected into the housing chamber 110 .

As shown in FIG. 7, the first to third holes 151, 161, and 171 may have a larger opening area toward the upper part of the first to third separating walls 150, 160, and 170.

That is, by increasing the size of the opening areas of the first and second holes 151 and 161 formed in the vertical direction toward the upper part of the first and second partition walls 150 and 160, The purge gas is introduced into the first and second gas inlet holes 121 and 131 formed on the bottom surfaces of the inlet chambers 120 and 130 and flows into the inside of the chamber 110 through the first and second holes 151 and 161. [ When injected, purge gas can be uniformly injected into the upper and lower portions of the first and second separation walls 150 and 160.

The purge gas and the fumes existing in the housing chamber 110 are communicated through the third hole 171 to the first and second gas exhaust holes 141 and 142 formed on the bottom surface of the gas exhaust chamber 140, The purge gas and the fumes can be exhausted only to the bottom surface of the first and second gas exhaust holes 141 and 142, that is, the bottom of the third partition wall 170, It is possible to prevent the purge gas and the fumes from being exhausted only to the lower portion of the third partition wall 170 by increasing the size of the opening area of the formed third hole 171 toward the upper portion of the third partition wall 170 have.

As shown in FIG. 8, the first to third holes 151, 161, and 171 are formed in a slit-shaped first hole (not shown in FIG. 8) Holes 161 ', 171'.

9, the first through third holes 151 ', 161', and 171 'in the form of slits are arranged in the horizontal direction of the first to third separation walls 150, 160, And the effect is the same as the case of the first to third holes 151, 161, and 171 of the plurality of holes in FIG. 7 described above.

The first to third holes 151, 161, and 171 may be provided with a tube 181 having a length.

The pipe 181 is installed in the first to third holes 151, 161, and 171 formed at one end of each of the first to third separation walls 150, 160 and 170, And is projected toward the gas inlet chambers 120, 130 and the gas exhaust chamber 140 side.

The purge gas injected from the first and second gas inlet chambers 120 and 130 into the chamber 110 can be introduced into the pipe 181 by providing the pipe 181 having the length in the first and second holes 151 and 161. [ The purge gas is introduced into the first and second gas inlet chambers 120 and 130 through the first and second gas inlet holes 121 and 131 to be described later with a small pressure, The purge gas can be injected further into the housing chamber 110 and the pipe 181 having a length in the third hole 171 is provided so that the gas exhaust chamber 140 can smoothly exhaust the purge gas and the fume.

In addition, the length of the pipe 181 may be made shorter as the distance from the first to the third separation walls 150, 160, and 170 increases.

That is, by arranging a plurality of pipes 181 vertically arranged in the first through third holes 151, 161 and 171, the purge gas is injected through the pipe 181, A large amount of purge gas flows in a short upper portion of the pipe 181 and a relatively small amount of purge gas flows in a lower long portion of the pipe 181, The purge gas can uniformly flow to the upper and lower portions of the third partition walls 150, 160, and 170.

Also, the pipe 181 can be used for the first through third holes 151 ', 161', and 171 'in the slit shape described above, and the effect is as described above.

As shown in Figs. 3 and 8, the first to third holes, which are respectively formed in the first to third separation walls 150, 160 and 170 of the wafer storage container 100, The first and second separation walls 150 and 160 are formed of only the first to third holes 151, 161 and 171 or the first to third holes 151 ', 161' and 171 ' And the third separating wall 170 may be formed by the first and second holes 151 'and 161' in the form of slits, or may be formed by the third holes 171 in the form of a plurality of holes.

Hereinafter, the process of removing the remaining fumes on the surface of the wafer w housed in the wafer storage container 100 according to the first embodiment of the present invention will be described with reference to the flow of the purge gas.

First, when the wafer storage container 100 is coupled to a load port (not shown), purge gas supplied from the supply port of the load port is formed on the inner bottom surface of the first and second gas inlet chambers 120 and 130 Is introduced into the first and second gas inlet chambers (120, 130) through the first and second gas inlet holes (121, 131).

The purge gas introduced into the first and second gas inlet chambers 120 and 130 flows through the first and second holes 151 and 161 formed in the first and second separation walls 150 and 160, (110).

That is, purge gas is injected from the left and right sides of the housing chamber 110, and the purge gas thus injected together with the fumes remaining on the surface of the wafer w is injected into the third hole 171 To the gas exhaust chamber (140).

The purge gas and the fumes exhausted into the gas exhaust chamber 140 pass through the first and second gas exhaust holes 141 and 142 formed in the left and right bottom surfaces of the gas exhaust chamber 140, It is going to go out into wealth.

When the wafer storage container 100 is detached from the load port and the wafer storage container 100 is transferred to another process, the door (not shown) is opened to prevent contamination of the wafer w stored in the wafer storage container 100 (Not shown) is engaged with the opened front portion of the wafer storage container 100 to seal the wafer storage container 100. [

Of course, in the process of removing the remaining fumes on the surface of the wafer w, the door is coupled to the open front portion of the wafer storage container 100, and the fume remaining on the surface of the wafer (w) May be removed.

Hereinafter, the above-mentioned plate will be described.

As described above, when the plate 200 is installed on both sides of the inside of the storage chamber 110, the plate 200 can also support the wafer w, The purge gas injected from the first and second gas inlet chambers 120 and 130 may be injected through the flow path structure inside the plate 200. [

Therefore, the plate in which the flow path structure is formed so as to inject the purge gas will be described with reference to Embodiments 1-1 and 1-2.

The plate 200 according to the first embodiment of the present invention includes a body 210 and a protrusion 220 protruding toward the front side of the plate 200 toward the front side of the plate 200 .

That is, the shape of the plate 200 may be formed in the shape of the body 210 and the protrusion 220 in the shape of a letter.

A protrusion 220 is formed on one side of the body 210 and third and fourth injection ports 253 and 254 are formed on the other side of the body 210 except for the protrusion 220.

A shared chamber 271 is formed in the body 220 and one end of the shared chamber 271 is formed with a slit-shaped groove formed elongated in the longitudinal direction on the other side of the body 220, The other end of the chamber 271 communicates with the first to fourth flow paths 261, 262, 263, and 264 to be described later.

The protruding portion 220 is composed of a first protruding surface 221 and a second protruding surface 222 having a convex circular arc shape.

A first ejection opening 251 is formed in the first protrusion surface 221 and a second ejection opening 252 is formed in the second protrusion surface 222.

A plurality of support bars 230 may be provided on one side of the protrusion 220 and the body 210 of the plate 200 and the wafer w may be seated on the support bar 230.

The support bar 230 can prevent the wafer w from being damaged by minimizing the contact area where the wafer w is contacted.

The wafer W may be supported on a part of the upper surface of the plate 200. In this case, there is an advantage that the wafer W can be supported without providing a separate member such as the support bar 230. [

The sharing chamber 271 communicates with the first and second holes 151 and 161 of the first and second separation walls 150 and 160 to introduce the purge gas injected from the first and second gas inlet chambers 120 and 130 .

One end of each of the first to fourth flow paths 261, 262, 263 and 264 communicates with the common chamber 271 and the other end communicates with the first to fourth injection ports 251, 252, 253 and 254, respectively.

The first and second injection ports 251 and 252 are respectively formed on the first and second projecting surfaces 221 and 222 of the protrusion 220 and the third and fourth injection ports 253 and 254 are formed on the first and second protrusion surfaces 221 and 222 of the body 210 The purge gas can be injected in various directions, so that the dead zone in which the residual fumes remaining on the surface of the wafer w can not be removed can be minimized.

In this case, the second flow path 262 may be bent so as to easily communicate the second jet path 252 formed on the second projecting surface 222 and the second flow path 262.

The purge gas flows into the first to fourth inlets 241, 242, 243 and 244 of the plate 200 and flows through the shared chamber 271 and the first to fourth flow paths 261, 262, 263 and 264 And is injected into the storage chamber 110 through the first to fourth injection ports 251, 252, 253, and 254.

In this case, the purge gas flowing into the common chamber 271 flows into the first to fourth flow paths 261, 262, 263, and 264, respectively, so that the first to fourth injection ports 251, 252, 253 And 254 to the interior of the storage chamber 110. [

In addition, the plate may be constituted by the plate 200 'according to the second embodiment, which is different from the plate 200 according to the above-described embodiment 1-1, in which the sharing chamber 271 is not provided.

As shown in FIG. 12, the plate 200 'according to the first embodiment of the present invention protrudes toward the side facing the wafer w toward the front of the body 210 and the plate 200' And a protrusion 220.

That is, the shape of the plate 200 'may be configured such that the body 210 and the protrusions 220 are in the shape of a letter.

The protrusion 220 is formed on one side of the body 210 and third and fourth injection ports 253 and 254 are formed on the other side of the body 210 except for the protrusion 220, The first to fourth inlets 241, 242, 243, and 244 are formed on the other side of the substrate 210.

The protruding portion 220 is composed of a first protruding surface 221 and a second protruding surface 222 having a convex circular arc shape.

A first injection port 251 is formed in the first projecting surface 221 and a second injection port 252 is formed in the second projecting surface 222.

A plurality of support bars 230 may be provided on one side of the protrusion 220 of the plate 200 'and the body 210 and the wafer w may be seated on the support bar 230.

The support bar 230 can prevent the wafer w from being damaged by minimizing the contact area where the wafer w is contacted.

In addition, the wafer W can be supported on a part of the upper surface of the plate 200 ', and in this case, it is possible to support the wafer w without providing a separate member such as the support bar 230 .

One end of each of the first to fourth inlets 241, 242, 243 and 244 is in communication with a plurality of first and second holes 151 and 161 of the first and second separation walls 150 and 160, 252, 253, and 254 through the first to fourth flow paths 261, 262, 263, and 264, respectively.

The first and second injection ports 251 and 252 are respectively formed on the first and second projecting surfaces 221 and 222 of the protrusion 220 and the third and fourth injection ports 253 and 254 are formed on the first and second protrusion surfaces 221 and 222 of the body 210 The purge gas can be injected in various directions, so that the dead zone in which the residual fumes remaining on the surface of the wafer w can not be removed can be minimized.

In this case, the second flow path 262 may be bent so as to easily communicate the second jet path 252 formed on the second projecting surface 222 and the second flow path 262.

Unlike the plate 200 according to the first embodiment, the plate 200 'according to the first embodiment of the present invention has no shared chamber 271, so that the first through fourth inlets 241 and 242 252, 253 and 254 so that the purge gas flowing into the purge gas inlet ports 241 and 242 and 243 and 244 is directly injected through the first to fourth injection ports 251, 252, 253 and 254, As shown in FIG.

Although the plates 200 and 200 'having four jetting ports, such as the first to fourth jetting ports 251, 252, 253 and 254, have been described above, the number of the jetting ports is not limited to the first and second separating walls 150, 160 may be varied depending on the shape and the number of holes formed in the holes.

Further, as described above, the first and second separation walls 150 and 160 are formed with the first and second holes 151 and 161 in the form of a plurality of holes, or the first and second holes 151 'and 161 The shared chamber 271 of the plate 200 of the first embodiment and the first to fourth inlets 241, 242, 243 and 244 of the plate 200 'of the second embodiment are formed by the holes As shown in FIG.

As shown in FIG. 5, the wafer storage container 100 'according to the second embodiment of the present invention includes a first gas inlet chamber 120' on the left side of the storage chamber 110 ' 'May be located on the right side of the gas exhaust chamber 140'.

That is, a first separating wall 150 is formed on the left side of the housing chamber 110 ', and a third separating wall 170 is formed on the right side of the housing chamber 110' 'And the gas exhaust chamber 140' form a separate space which is independent of each other.

A first gas inlet hole 121 and a third gas inlet hole 122 are formed on the front and rear surfaces of the inner bottom surface of the first gas inlet chamber 120 ' A first gas exhaust hole 141 and a second gas exhaust hole 142 are formed on the front surface and the rear surface, respectively.

First and third holes 151 and 171 are formed in the first and third separation walls 150 and 170, respectively.

The first and third holes 151 and 171 may be formed in the form of a plurality of holes or slits as described in the first embodiment, and a description thereof will be omitted.

According to the above-described configuration, the wafer storage container 100 'according to the second embodiment of the present invention is configured such that the first gas inlet chamber 120' located on the left side of the storage chamber 110 ' The purge gas is injected and the purge gas and the fumes remaining on the surface of the wafer W pass through the gas exhaust chamber 140 'located on the right side of the housing chamber 110' And is discharged to the exhaust part.

Of course, the first gas inlet chamber 120 'of the wafer storage container 100' according to the second embodiment of the present invention is positioned on the right side of the accommodating chamber 110 'and the position of the second gas inlet chamber 130' And may be located on the left side of the housing chamber 110 '.

In the housing chamber 110 'of the wafer storage container 100' according to the second embodiment of the present invention, a plurality of plates 200 and 200 'according to the above-mentioned 1-1 and 1-2 embodiments are provided And the effect is the same as in the wafer storage container 100 according to the first embodiment.

As shown in FIG. 6, the wafer storage container 100 '' according to the third embodiment of the present invention has the first gas inlet chamber 120 '' positioned on the left side of the storage chamber 110 '', Quot;) and the second gas inlet chamber 130 " and the gas exhaust chamber 140 "

That is, the first partition wall 150 is formed on the left side of the housing chamber 110 ", the second partition wall 160 is formed on the right front side, and the third partition wall 170 is formed on the right rear side , The housing chamber 110 and the first and second gas inlet chambers 120 '' and 130 '' and the gas exhaust chamber 140 '' form a separate space which is independent of each other.

A first gas inlet hole 121 and a third gas inlet hole 122 are formed on the front and rear surfaces of the inner bottom surface of the first gas inlet chamber 120 " A second gas inlet hole 131 is formed in the front surface of the gas exhaust chamber 140 ", and a first gas exhaust hole 141 is formed in the rear surface of the bottom surface of the gas exhaust chamber 140 ".

A fourth partition wall 180 is formed between the second gas inlet chamber 130 "and the gas exhaust chamber 140" so that the second gas inlet chamber 130 "and the gas exhaust chamber 140" It serves to form separate and independent spaces.

First to third holes 151, 161 and 171 are formed in the first to third separation walls 150, 160 and 170, respectively.

The first through third holes 151, 161, and 171 may be formed in a plurality of hole shapes or slit shapes as described above in the first embodiment, and a description thereof will be omitted.

The wafer storage container 100 "according to the third embodiment of the present invention has the first gas inlet chamber 120" located on the left side of the storage chamber 110 "and the second gas inlet chamber 120" The purge gas is injected from the gas inlet chamber 130 "to the housing chamber 110" and the purge gas and the fumes of the wafer w are introduced into the gas exhaust chamber Quot; 140 "to the exhaust port of the load port (not shown).

Of course, the first gas introducing chamber 120 "of the wafer accommodating container 100" according to the third embodiment of the present invention is disposed on the right side of the accommodating chamber 110 " The gas exhaust chamber 140 "may be located on the left side of the housing chamber 110 ", and the second gas inlet chamber 130" may be formed on the rear face of the housing chamber 110 & May be located on the front surface of the chamber 110 ".

In the wafer storage container 100 "of the third embodiment of the present invention, a plurality of plates 200, 200 'according to the 1-1 and 1-2 embodiments described above are provided in the storage chamber 110" And the effect is the same as in the wafer storage container 100 according to the first embodiment.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the following claims Or modified.

100, 100 ', 100 ": wafer storage container 110, 110', 110": storage room
120, 120 ', 120 ": first gas inlet chamber 121: first gas inlet hole
122: third gas inlet hole 130, 130 ', 130 ": second gas inlet chamber
131: second gas inlet hole 140, 140 ', 140 ": gas exhaust chamber
141: first gas exhaust hole 142: second gas exhaust hole
150: first separating wall 151, 151 ': first hole
160: second separating wall 161, 161 ': second hole
170: third separation wall 171, 171 ': third hole
180: fourth separating wall 181: tube
200, 200 ': plate 210: body part
220: protruding portion 221: first protruding surface
222: second protruding surface 230: supporting rod
241: first inlet 242: second inlet
243: third inlet 244: fourth inlet
251: first jetting port 252: second jetting port
263: Third jetting hole 264: Fourth jetting hole
261: first flow path 262: second flow path 262:
263: third euro 264: fourth euro
271: Sharing chamber

Claims (1)

A storage compartment in which a front surface is openable, a first partition wall is formed on the left side, a second partition wall is formed on the right side, and a third partition wall is formed on the rear side;
A first hole formed in the first partition wall in the horizontal direction and in the vertical direction to communicate with the gas;
A second hole formed in the second separating wall in a horizontal direction and a plurality of vertical directions to allow gas communication;
A third hole formed in the third partition wall in the horizontal direction and in the vertical direction so as to communicate with the gas; And
And a plurality of plates installed in the housing chamber so as to be spaced upward and downward to respectively support the wafers,
Wherein the plurality of first holes formed in the horizontal direction are positioned between upper and lower adjacent plates of the plurality of plates, the first holes have an opening area, and the upper and lower distances of the opening areas are Is smaller than the separation distance between the plates
Wherein a plurality of the second holes formed in the horizontal direction are positioned between upper and lower adjacent plates of the plurality of plates, the second holes have an opening area, and the upper and lower distances of the opening areas are adjacent to each other Is smaller than the separation distance between the plates
Wherein the third holes formed in the plurality of horizontal directions are positioned between upper and lower adjacent plates of the plurality of plates, the third holes have an opening area, and the upper and lower distances of the opening areas are adjacent to the upper and lower Is smaller than a separation distance between the plates.

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