KR101722683B1 - Wafer storage container - Google Patents

Wafer storage container Download PDF

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Publication number
KR101722683B1
KR101722683B1 KR1020150186011A KR20150186011A KR101722683B1 KR 101722683 B1 KR101722683 B1 KR 101722683B1 KR 1020150186011 A KR1020150186011 A KR 1020150186011A KR 20150186011 A KR20150186011 A KR 20150186011A KR 101722683 B1 KR101722683 B1 KR 101722683B1
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KR
South Korea
Prior art keywords
gas
space
wafer
lower plate
chamber
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KR1020150186011A
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Korean (ko)
Inventor
우범제
윤석문
한명석
김현신
Original Assignee
피코앤테라(주)
우범제
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Priority to KR1020150186011A priority Critical patent/KR101722683B1/en
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Publication of KR101722683B1 publication Critical patent/KR101722683B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D85/00—Containers, packaging elements or packages, specially adapted for particular articles or materials
    • B65D85/30—Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure
    • B65D85/38—Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure for delicate optical, measuring, calculating or control apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a wafer storage container, storing a wafer therein. More specifically, a storage chamber and a plurality of space chambers are formed into separate independent spaces by using a double wall structure having an inner wall and an outer wall. Moreover, devices removing fume of the wafer by using the space of the space chamber or controlling or measuring an inner environment of the wafer storage container can be installed in the wafer storage container.

Description

[0001] WAFER STORAGE CONTAINER [0002]

The present invention relates to a wafer storage container in which a wafer is housed.

Generally, a semiconductor device is manufactured by selectively and repeatedly performing a deposition process, a polishing process, a photolithography process, an etching process, an ion implantation process, a cleaning process, an inspection process, and a heat treatment process on a wafer, The wafer is then transported to the specific location required by each process.

In the semiconductor manufacturing process, the processed wafer is stored in a wafer storage container such as a Front Opening Unified Pod (FOUP) so as not to be contaminated or damaged by external contaminants and shocks during storage and transportation as a high precision article Transfer.

In this case, the process gas used in the process and fumes as a by-product in the process and the like are not removed but stored in the wafer storage container while remaining on the surface of the wafer.

However, if such residues are adhered to the surface of the wafer, the process may lead to contamination of the semiconductor manufacturing equipment and poor etch pattern, resulting in lower reliability of the product.

Recently, in order to solve this problem, a wafer storage container in which a wafer is housed is coupled with a load port to remove fumes remaining on the surface of the wafer using gas supplied from the load port (Hereinafter, referred to as "Patent Document 1") and Japanese Patent Laid-Open Publication No. 2012-004199 (hereinafter referred to as "Patent Document 2") have been developed as wafer- Quot;) is known.

The post purge apparatus disclosed in Patent Document 1 includes a wafer storage unit, a plurality of injection pipes having a plurality of injection nozzles, and a supply pipe connected to the plurality of injection pipes, and a fume exhaust unit. The first gas is supplied along the supply pipe, flows into the plurality of injection pipes, and is injected through the plurality of injection nozzles into the wafer accommodated in the wafer accommodating portion.

However, in the case of the post purge device of Patent Document 1, since the fume removing portion is provided in the internal space of the wafer storage portion, the space of the internal space is narrowed when the wafer is housed in the wafer storage portion, There is a problem that there is no space for installing other devices for controlling or measuring the environment.

Further, it is preferable that the injection pressure of the first gas injected from the injection pipe located farthest from the supply pipe among the plurality of injection pipes arranged in the longitudinal direction of the fume removing unit is higher than the injection pressure of the first gas injected from the other injection pipe The injection pressure of the first gas injected from the top and the bottom of the injection pipe is relatively lower than the injection pressure of the first gas injected from the center of the injection pipe to which the supply pipe is fastened There is a problem that the first gas can not be sufficiently injected into the front portion, the lower portion and the upper portion of the wafer accommodating portion.

Since the first base body is injected in a kind of linear manner through the injection pipe, the first base body is not injected into the region where the injection pipe is not arranged in the wafer accommodating portion, The injection of the first gas is concentrated only in the region. Therefore, when the number of the injection pipes is increased to solve this problem, the difference in jet pressure of the first base body becomes larger, There is a problem that the first gas can not be injected further into the front portion, the lower portion, and the upper portion of the gasket.

As the post purge device is used for a long period of time, the fume is continuously brought into contact with the fume exhaust part, and the fume exhaust part is contaminated and corroded. Therefore, the post purge device is required to be cleaned or replaced. The cleaning and replacement of the parts can not be easily performed, and the life of the post purge device can be shortened.

The substrate storage container of Patent Document 2 includes a container body, a pair of air supply valves formed on a bottom plate of the container body for flowing an inert gas, and a pair of exhaust valves, And a configuration located in a space surrounded by the side wall and the surrounding portion of the support.

Accordingly, when the inert gas is introduced into the space through the pair of supply valves, the substrate storage container is formed between an outlet formed between the plurality of rear supports and the plurality of rear supports, or an outlet formed between the upper and lower adjacent rear supports The inert gas flows in the direction of the wafer through the gap, and then exhausted to a pair of exhaust valves formed in front of the bottom plate of the container body.

However, in the case of the substrate storage container of Patent Document 2, since a pair of exhaust valves are formed in front of the container body, and a support body is formed on the left and right sides of the container body, There is a problem that there is no space for installing other devices for adjusting or measuring the internal environment of the substrate storage container.

The inert gas is supplied only to the rear region of the wafer, so that a yarn area in which the fumes of the wafer are not removed can occur in front of the wafer.

The inert gas merely flows into the space and flows only through the outlet or the gap and does not have a pressure and a flow rate enough to directly remove the residual fumes on the surface of the wafer, There is a problem that it can not flow sufficiently.

Since the inert gas from which the fumes of the wafer are removed is exhausted to the pair of exhaust valves formed in front of the bottom plate, the exhaust gas can be intensively exhausted only in a partial region adjacent to the exhaust valve, There is a problem that it is difficult to perform smoothly.

Due to the supply of the inert gas in some regions and the exhaust in some regions, a flow of the inert gas inside the container body may form a kind of turbulent flow, There is a problem that not only the exhaust can not be performed but also the flow of the inert gas in the rear and front regions based on the wafer can not be smoothly performed and the efficiency of removing the fume of the wafer is lowered.

Korean Patent No. 1366135. Japanese Laid-Open Patent Application No. 2012-004199.

SUMMARY OF THE INVENTION The present invention is conceived to solve the above-mentioned problems, and it is an object of the present invention to provide a wafer storage container which efficiently utilizes a space other than the storage chamber and the double-wall structure.

According to an aspect of the present invention, there is provided a wafer storage container including a main body in which a wafer is housed, the main body including: an outer wall part constituting an outer side surface of the main body; And an inner wall spaced inwardly from the outer wall, wherein the wafer is accommodated in a storage chamber formed of an inner space of the inner wall, and a space chamber formed of a space between the outer wall and the inner wall is formed in the space And a plurality of holes are formed in the circumferential direction of the housing chamber.

In addition, a plurality of holes are formed in the inner wall portion to communicate the space chamber and the storage chamber, at least one of the plurality of space chambers supplies gas to the storage chamber through the plurality of holes, Wherein at least one of the plurality of holes discharges the gas in the accommodating chamber through the plurality of holes.

The apparatus further includes a wafer support coupled to the upper plate and the lower plate of the main body, wherein the wafer support includes a plurality of wafer supports arranged in the upward and downward directions.

Further, the inner wall part is formed with a plurality of wafer supports arranged in the upward and downward directions.

The plurality of holes are formed in the form of a matrix, and a plurality of holes in the form of the matrix are located between the wafer supports arranged in a plurality of the upward and downward directions.

The main body may further comprise a lower plate, which is a bottom surface of the main body, and is detachably coupled to the main body.

The lower plate may include a gas hole formed in a bottom surface of the lower plate so as to be positioned in an inner direction of the main body than the inner wall part; A communication hole formed on an upper surface of the lower plate so as to be located in the space chamber; And a passage formed inside the lower plate to communicate the gas hole and the communication hole.

The lower plate includes a first lower plate forming a bottom surface of the main body, a second lower plate located below the first lower plate, and a third lower plate located below the second lower plate And the gas hole is formed in the third lower plate, the communication hole is formed in the first lower plate, and the passage is formed in the second lower plate.

Further, a backflow preventing means for preventing back flow of the gas flow in the space chamber is formed.

Further, a flow measurement sensor for measuring a gas flow in the space chamber is formed.

Further, a blocking member for blocking the gas flow in the space chamber is provided.

Further, the inner wall part is detachably coupled to the main body.

Further, the outer wall part and the inner wall part have a convex curvature toward the rear of the main body.

Further, the distance between the outer wall portion and the inner wall portion is the same.

Further, a reinforcement column is installed between the plurality of space chambers.

Further, it is characterized by including a sensor installed inside the space chamber.

Further, it is characterized by including a heater provided in the space chamber.

In addition, the cross-sectional width of the plurality of space chambers is constant, and the cross-sectional width of the accommodating chamber increases toward the front opening.

The plurality of space chambers may include first and second space chambers respectively located on front left and right outer sides with respect to a center point of the wafer housed in the storage chamber; Third and fourth space chambers respectively located on the rear left and right outer sides of the third and fourth space chambers and fifth and sixth space chambers located on the outer sides of the compartment at the rear of each of the third and fourth space chambers .

According to the wafer storage container of the present invention as described above, the following effects can be obtained.

Due to the double wall structure of the wafer storage container, the storage chamber and the plurality of space chambers form a separate space that is independent from each other, thereby ensuring sufficient space for accommodating the wafer, Or an apparatus for adjusting or measuring the internal environment of the wafer storage container can be provided.

Since the gas is supplied on the entire side surface of the housing chamber in a planar manner, the gas is uniformly supplied, thereby preventing occurrence of a yarn area in which the fume of the wafer is not removed.

The gas supplied to the storage chamber has a high pressure and a high flow rate so that the gas can be sprayed from the nozzle rather than simply leaking the gas into the plurality of holes, It is possible to uniformly supply the liquid to the central region and efficiently remove the residual fumes on the surface of the wafer.

A plurality of holes are arranged in a matrix form having a plurality of rows and a plurality of rows between upper and lower supporting rods so that the fumes of the wafer supported by the supporting rods can be efficiently removed.

The gas and the fumes can be exhausted efficiently on the entire side surface of the storage chamber, whereby the storage chamber can be replaced with a clean gas and the oxidation of the wafer can be prevented.

Since the outer wall is detachably provided from the wafer storage container, the separation wall can be easily replaced or cleaned, thereby extending the life of the wafer storage container.

The temperature and humidity of the inside of the wafer storage container can be controlled by the heater and the sensor, and the temperature and humidity can be measured. Thus, the fumes of the wafer stored in the wafer storage container can be removed more efficiently have.

The blocking member and the backflow prevention means can prevent gas from being supplied to the inside of the wafer storage container and flowing backward when gas is exhausted. When the wafer storage container is separated from the load port, the gas existing in the wafer storage container Can be prevented from flowing out to the outside.

It is possible to determine whether or not the supply of the gas inside the wafer storage container and the exhaustion of the gas are smoothly performed by the flow measurement sensor.

1 is a perspective view of a wafer storage container according to a preferred embodiment of the present invention.
Fig. 2 is an exploded perspective view of Fig. 1; Fig.
3 is a bottom view showing a bottom surface of the upper plate of Fig. 1;
4 is a plan view showing an upper surface of the first lower plate of FIG. 1;
5 (a) and 5 (b) are side cross-sectional views showing that a blocking member is installed on the first lower plate of Fig.
6 is a plan view showing an upper surface of the second lower plate of FIG. 1;
7 is a plan view showing an upper surface of the third lower plate of Fig. 1;
FIG. 8 is a plan sectional view of FIG. 1; FIG.
9 (a) is a perspective view showing the first and second reinforcing pillars of Fig. 1; Fig.
9 (b) is a perspective view showing the third to fifth reinforcing pillars of Fig. 1; Fig.
FIG. 10 is a perspective view showing the support portion of FIG. 1; FIG.
11 is a side sectional view showing a cross section of a left side surface of Fig. 1;
12 is a view showing gas flow in a wafer storage container according to a preferred embodiment of the present invention.

The 'gas' mentioned below is a term collectively referred to as an inert gas for removing the fumes of the wafer W, and in particular, it may be nitrogen (N 2 ) gas which is one of the inert gases.

A wafer storage container according to a preferred embodiment of the present invention comprises a main body. The main body has a front opening portion opened frontward. The main body includes an outer wall portion constituting the outer side surface of the main body, an inner wall portion formed inwardly spaced from the outer wall portion, an upper plate constituting the upper surface of the main body, A lower plate constituting a bottom surface, a storage chamber formed of an inner space of the inner wall portion, and a plurality of space chambers formed of a space between the outer wall portion and the inner wall portion.

The outer wall portion connects the upper plate and the lower plate in a region excluding the front opening portion of the main body, thereby constituting the outer side surface of the main body.

The inner wall portion connects the upper plate and the lower plate in a region excluding the front opening portion of the main body, thereby constituting the inner side surface of the main body. Therefore, the main body is opened frontward by the front opening portion, and has a double wall structure by the inner wall portion and the outer wall portion.

A plurality of holes may be formed in the inner wall portion, and the plurality of holes serve to communicate the plurality of space chambers and the storage chambers, respectively.

The upper plate constitutes the upper surface of the main body, and the lower plate constitutes the bottom surface of the main body.

The lower plate may be detachably coupled to the body and may be configured as a combination of a plurality of lower plates.

The lower plate is a combination of a plurality of lower plates, and the lower plate of the main body constituting the bottom surface of the main body is the uppermost plate among the plurality of lower plates.

A gas hole may be formed on the bottom surface of the lower plate, a plurality of communication holes may be formed on the upper surface of the lower plate, and a gas hole and a plurality of communication holes may be formed in the lower plate. A passage may be formed.

The gas hole may be composed of a plurality of gas holes, at least one of the plurality of gas holes serving as a supply gas hole for supplying gas to the space chamber, and at least one of the plurality of gas chambers may contain gas and fumes of the storage chamber And serves as an exhaust gas hole for evacuation.

The plurality of gas holes are constituted by a pair of front gas holes located forward of the central point of the wafer housed in the housing chamber and a pair of rear gas holes located rearward of the central point of the wafer housed in the housing chamber .

The housing chamber is a space formed in the inner space of the inner wall portion of the main body in which the wafer is accommodated.

A plurality of the space chambers are formed in the circumferential direction of the housing chamber, and are spaces formed between the inner wall portion and the outer wall portion in the main body.

The plurality of spatial chambers may serve as gas chambers through which gas flows. To this end, each of the plurality of spatial chambers is in communication with the storage chamber by an inner wall portion having a plurality of holes, And can be communicated with the gas holes by holes and passages.

In this case, at least one of the plurality of space chambers functions as a gas supply chamber for supplying gas to the storage chamber, and at least one of the plurality of gas chambers serves as a gas exhaust chamber for exhausting the gases in the storage chamber and the fumes in the wafer .

In addition, the plurality of space chambers can be used as a space in which devices for adjusting or measuring the internal environment of the wafer storage container are installed. To this end, a heater for controlling the temperature inside the wafer storage container can be installed, A sensor for sensing temperature or humidity inside the container may be provided.

The wafer storage container according to the preferred embodiment of the present invention can form a separate space in which the storage chamber and the plurality of space chambers are independent from each other due to the double wall structure of the outer wall portion and the inner wall portion.

Thus, there is an effect that it is possible to install devices for removing fumes of the wafer or adjusting or measuring the internal environment of the wafer storage container by utilizing the space of the space chamber, while sufficiently securing the space for accommodating the wafer.

The plurality of spatial chambers may be formed of first to sixth spatial chambers, that is, six spatial chambers, and the plurality of gas holes may include first to fourth gas holes, that is, four gas holes. Further, the lower plate may be a combination of the first to third lower plates, that is, the combination of the three lower plates.

The first and second gas holes are front gas holes located forward in relation to the central point of the wafer housed in the housing chamber, and the third and fourth gas holes are located in the rear of the wafer, It is a gas hole.

The first gas hole can communicate with the first and third spatial chambers, the second gas hole can communicate with the second and fourth spatial chambers, and the third and fourth gas holes can communicate with the fifth, .

The first and second gas holes are connected to the gas supply nozzles of the load port so that gas can be supplied into the compartments through the first to fourth space chambers. In the third and fourth gas holes, the gas exhaust nozzles of the load port The gas in the storage chamber and the fumes of the wafer can be exhausted through the fifth, sixth space chambers.

Hereinafter, as one embodiment of the wafer storage container according to the preferred embodiment of the present invention, as described above, the spatial chamber is formed of the first to sixth spatial chambers, and the gas holes are formed of the first to fourth gas holes And the lower plate is made of the combination of the first to third lower plates.

In this case, the first and second gas holes serve as gas supply holes to be coupled with the gas supply nozzles of the load port, and the third and fourth gas holes serve as gas discharge holes to be combined with the gas discharge nozzles of the load port. Therefore, the first and third gas chambers communicating with the first gas holes and the second and fourth spatial chambers communicating with the second gas holes serve as gas supply chambers, and a fifth space chamber communicating with the third gas holes, And the sixth space chamber communicating with the fourth gas hole serves as a gas exhaust chamber.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a perspective view of a wafer storage container according to a preferred embodiment of the present invention, FIG. 2 is an exploded perspective view of FIG. 1, FIG. 3 is a bottom view of a bottom surface of the upper plate of FIG. 1, 5 (a) and 5 (b) are side cross-sectional views showing that a blocking member is provided on the first lower plate of FIG. 4, and FIG. 6 is a cross- FIG. 7 is a plan view showing the upper surface of the third lower plate of FIG. 1, FIG. 8 is a plan sectional view of FIG. 1, FIG. 9 (a) Fig. 10 is a perspective view showing the supporting portion of Fig. 1, and Fig. 11 is a perspective view showing the supporting columns of Fig. 1 is a side sectional view showing a cross-section of a left side surface of the wafer holder 1 according to a preferred embodiment of the present invention, A block diagram illustrating a flow of gas of the group.

Hereinafter, a wafer storage container 1 according to a preferred embodiment of the present invention will be described.

1 and 2, a wafer storage container 1 according to a preferred embodiment of the present invention includes an outer wall part 100, an inner wall part 200, an upper plate 300, and a first lower plate 400 First to fifth reinforcing pillars 710a to 710e and a wafer support 720 provided on the main body 10, and a main body 10, And a heater and a sensor installed in the space chamber 150 of the housing 10.

As shown in FIGS. 1, 2, 8, and 12, the main body 10 has an outer opening 100 having a front opening opened frontward and constituting an outer side surface of the main body 10, An upper plate 300 formed to be spaced inwardly from the upper surface 100 of the main body 10 and constituting an inner side surface of the main body 10, A first lower plate 500 positioned at a lower portion of the first lower plate 400 and a third lower plate 600 positioned at a lower portion of the second lower plate 500; A storage chamber 250 formed of an inner space of the inner wall portion 200 and a space chamber 150 formed of a space between the outer wall portion 100 and the inner wall portion 200.

Hereinafter, the outer wall portion 100 of the main body 10 will be described.

12, the outer wall part 100 connects the upper plate 300 and the first lower plate 400 in a region excluding the front opening of the main body 10, 10).

The outer wall portion 100 is composed of first to sixth outer walls 100a to 100f and each of the first to sixth outer walls 100a to 100f has an upper portion thereof fixed to the outer wall portion of the upper plate 300 The upper plate 300 and the first lower plate 400 are connected to each other by being fitted into the groove 310 and the lower portion of the lower plate 400 being inserted into the outer wall lower fixing groove 410 of the first lower plate 400 And constitutes the outer side surface of the main body 10.

The first and second outer walls 100a and 100b are located on the front left and right sides of the main body 10, respectively. The third and fourth outer walls 100c and 100d are located on the rear left and right sides of the main body 10, respectively. The fifth and sixth outer walls 100e and 100f are located behind the main body 10.

Accordingly, the first outer wall 100a, the third outer wall 100c, the fifth outer wall 100e, the sixth outer wall 100f, the fourth outer wall 100d, and the third outer wall 100d are arranged from the front left to the front right with respect to the main body 10, And the second outer wall 100b. In addition, the first to sixth outer walls 100a to 100f form the side surface of the region excluding the front opening of the main body 10. [

The first and third outer walls 100a and 100c are connected by a first reinforcing column 710a. The third and fifth outer walls 100c and 100e are connected by a third reinforcing column 710c. The fifth and sixth outer walls 100e and 100f are connected by a fifth reinforcing column 710e. The fourth and sixth outer walls 100d and 100f are connected by a fourth reinforcing column 710d. The second and fourth outer walls 100b and 100d are connected by a second reinforcing column 710b.

The overall shape of the first to sixth outer walls 100a to 100f connected to each other by the first to fifth reinforcing pillars 710a to 710e is preferably an arcuate shape having a convex curvature toward the rear of the main body 10 This is to more effectively remove the fumes of the wafer W by forming the shape of the main body 10 in accordance with the shape of the wafer W housed in the housing chamber 250 to be described later.

Hereinafter, the inner wall portion 200 of the main body 10 will be described.

As shown in FIGS. 1, 2, 8 and 12, the inner wall part 200 is composed of first to sixth inner walls 200a to 200f, and each of the first to sixth inner walls 200a to 200f Are spaced apart from the first to sixth outer walls 100a to 100f in the inner direction of the main body 10, and a plurality of holes 210 are formed.

Each of the first to sixth inner walls 200a to 200f is fitted into the inner wall upper portion fixing groove 320 of the upper plate 300 to be described later and the lower portion thereof is fixed to the inner wall of the first lower plate 400 The upper plate 300 and the first lower plate 400 are connected to each other in the region excluding the front opening of the main body 10 to constitute the inner side surface of the main body 10.

The first and third inner walls 200a and 200c are connected by a first reinforcing column 710a. The third and fifth inner walls 200c and 200e are connected by a third reinforcing column 710c. The fifth and sixth inner walls 200e and 200f are connected by a fifth reinforcing column 710e. The fourth and sixth inner walls 200d and 200f are connected by a fourth reinforcing column 710d. The second and fourth inner walls 200b and 200d are connected by a second reinforcing column 710b.

The overall shape of the first to sixth inner walls 200a to 200f connected to each other by the first to fifth reinforcing pillars 710a to 710e is also the same as that of the first to sixth outer walls 100a to 100f, It is preferable that it is an arc shape having a convex curvature rearward. In addition, it is preferable that the arc shapes of the first to sixth outer walls 100a to 100f and the first to sixth inner walls 200a to 200f have the same curvature. Accordingly, the first to sixth outer walls 100a to 100f And the first to sixth inner walls 200a to 200f may be the same.

Hereinafter, the plurality of holes 210 of the first to sixth inner walls 200a to 200f will be described.

As shown in FIGS. 1, 2 and 11, a plurality of holes 210 are formed in the first to sixth inner walls 200a to 200f, respectively, and are formed in the form of a matrix having a plurality of rows and a plurality of rows desirable.

In this case, the plurality of holes 210 are arranged in a matrix form having a plurality of rows and a plurality of rows between the upper and lower adjacent supports 721, so that the fumes of the wafer W supported on the support 721 It can be efficiently removed.

It is preferable that the intervals between the rows and the rows and the intervals between the rows and the columns of the plurality of holes 721 in the matrix form have the same interval. In other words, it is preferable that the vertical interval and the horizontal interval between the hole 721 and the hole 721 have the same interval.

In addition, unlike the above, the plurality of holes 721 may be formed in a shape having a plurality of rows and a plurality of rows in a zigzag shape in which adjacent rows intersect instead of a matrix.

In this case, as compared with a plurality of holes 721 in the form of a matrix, a region where holes 721 are not formed between a plurality of rows of a plurality of holes 721 and a plurality of rows, that is, The gas can be more densely supplied to the inside of the housing chamber 250. As a result,

The plurality of holes 210 may be formed to have a larger diameter from the first to sixth inner walls 200a to 200f toward the upper portion.

In this case, when the first to sixth spatial chambers 150a to 150f are filled with the gas and supplied to the accommodating chamber 250, a plurality of holes (not shown) positioned below the first to sixth inner walls 200a to 200f 210 to prevent the gas from being supplied. Therefore, the gas can be uniformly supplied to the housing chamber 250 through the plurality of holes 210 formed in the upper and lower portions of the first to sixth inner walls 200a to 200f.

When the gas supplied to the housing chamber 250 is exhausted through the first to sixth space chambers 150a to 150f, the upper and lower portions of the first to sixth inner walls 200a to 200f The gas can be uniformly exhausted into the first to sixth space chambers 150a to 150f through the plurality of holes 210 formed in the first to sixth space chambers 150a to 150f.

The first to sixth inner walls 200a to 200f having the above-described configuration are positioned between the storage chamber 250 and the first to sixth spatial chambers 150a to 150f, respectively. The storage chamber 250 and the first And the sixth space chambers 150a to 150f into separate independent spaces.

The plurality of holes 210 formed in the first to sixth inner walls 200a to 200f serve to communicate the gas flowing into the storage chamber 250 and the first to sixth space chambers 150a to 150f .

Hereinafter, the upper plate 300 of the main body 10 will be described.

1 to 3, the upper plate 300 may have a curved shape having a curvature corresponding to the overall shape of the outer wall 100 and the inner wall 200, Respectively.

On the lower surface of the upper plate 300, an outer wall upper fixing groove 310, an inner wall upper fixing groove 320, and first to fifth reinforcing column upper fixing grooves 330a to 330e are formed.

The upper portions of the first to sixth outer walls 100a to 100f are fitted and fixed to the outer wall portion upper fixing groove 310. [ The upper portions of the first to sixth inner walls 200a to 200f are fitted and fixed to the inner wall upper fixing groove 320. [ The outer wall upper fixing groove 310 and the inner wall upper fixing groove 320 may be curved so as to correspond to shapes of the outer wall 100 and the inner wall 200 fixed to the outer wall 100 and the inner wall, respectively.

The upper portions of the first to fifth reinforcing pillars 710a to 710e are fitted and fixed to the first to fifth reinforcing pole upper fixing grooves 330a to 330e. The first to fifth reinforcing pillars 710a to 710e fixed to the first to fifth reinforcing pillar upper fixing grooves 330a to 330e are screwed to the top plate 300, respectively. In addition, the first to fifth reinforcing pole upper fixing grooves 330a to 330e may have shapes corresponding to the upper portions of the first to fifth reinforcing pillars 710a to 710e, respectively.

Hereinafter, the first lower plate 400 of the main body 10 will be described.

1, 2 and 4, the first lower plate 400 is opposed to the upper plate 300 to form the bottom surface of the main body 10, and the outer wall 100 and the inner wall 200 And has a circular arc shape having a curvature so as to correspond to the overall shape of the main body 10 and forms the bottom surface of the main body 10. [

On the upper surface of the first lower plate 400, an outer wall lower fixing groove 410, an inner wall lower fixing groove 420, and first to fifth reinforcing column lower fixing grooves 430a to 430e are formed.

The lower portions of the first to sixth outer walls 100a to 100f are fitted and fixed to the outer wall portion lower fixing groove 410. The lower portions of the first to sixth inner walls 200a to 200f are fitted and fixed to the inner wall lower portion fixing groove 420. The outer wall lower portion fixing groove 410 and the inner wall lower wall fixing groove 420 may be formed in a curved shape having a curvature so as to correspond to the shape of the outer wall portion 100 and the inner wall portion 200 fixed to the inner wall portion lower fixing groove 410 and the inner wall lower wall fixing groove 420, respectively.

The lower portions of the first to fifth reinforcing pillars 710a to 710e are fitted and fixed to the first to fifth reinforcing pole lower fixing grooves 430a to 430e. The first through fifth reinforcing pillars 710a through 710e fitted and fixed to the first through fifth reinforcing column lower fixing grooves 430a through 430e are screwed to the lower plate 400, respectively. In addition, the first to fifth reinforcing column lower fixing grooves 430a to 430e may have a shape corresponding to the lower portions of the first to fifth reinforcing pillars 710a to 710e, respectively.

First to sixth communication holes 450a to 450f are formed in the first lower plate 400 to pass through the upper and lower surfaces of the first lower plate 400, respectively.

The first communication hole 450a is located between the first outer wall 100a and the first inner wall 200a. The second communication hole 450b is located between the second outer wall 100b and the second inner wall 200b. The third communication hole 450c is located between the third outer wall 100c and the third inner wall 200c. The fourth communication hole 450d is located between the fourth outer wall 100d and the fourth inner wall 200d. The fifth communication hole 450e is located between the fifth outer wall 100e and the fifth inner wall 200e. The sixth communication hole 450f is located between the sixth outer wall 100f and the sixth inner wall 200f.

Each of the first through sixth communication holes 450a through 450f may have a slit shape having long slits formed in one direction or having the same width.

When the first to sixth communication holes 450a to 450f have the shape of a long hole, the gas is supplied from the first to fourth space chambers 150a to 150d to the storage chamber 250, , The gas to the six spatial chambers 150e and 150f and the exhaust of the fumes of the wafer W can be further facilitated.

More specifically, gas supply from the first to fourth spatial chambers 150a to 150d to the compartment 100 is performed by a plurality of holes 210 of the first to fourth inner walls 200a to 200d, Plane). In this case, when the first to fourth communication holes 450a to 450d formed on the bottom surfaces of the first to fourth space chambers 150a to 150d are formed as elongated holes, the first to fourth space chambers 150a to 150d Can be made uniform over most of the area of the bottom surface of the first to fourth spatial chambers 150a to 150d. Therefore, the uniform gas is filled in the longitudinal direction of the bottom surface of the first to fourth space chambers 150a to 150d (longitudinal direction as the first to fourth communication holes 450a to 450d formed in the long hole) The filled gas is supplied to the storage chamber 250 through the plurality of holes 210 of the first to fourth inner walls 200a to 200d so that the supply of the gas on the surface can be more effectively performed .

A plurality of holes 210 of the fifth and sixth inner walls 200e and 200d positioned between the storage chamber 250 and the fifth and sixth spatial chambers 150e and 150f are provided on the surface of the storage chamber 250 and the fumes of the wafer W are also exhausted by the above-described principle. Therefore, the gas in the chamber 250 and the fumes of the wafer W are transferred to the third and fourth chambers 150e and 150f through the fifth and sixth space chambers 150e and 150f by the fifth and sixth communication holes 450e and 450f formed in the long hole, And can be effectively exhausted to the gas holes 630 and 640.

Hereinafter, the second lower plate 500 of the main body 10 will be described.

1, 2 and 6, the second lower plate 500 is positioned between the first lower plate 400 and the third lower plate 600, and the first through fourth passages 510, 520, 530, and 540 are formed. Like the first lower plate 400, the second lower plate 500 may have a circular arc shape having a curvature so as to correspond to the overall shape of the outer wall 100 and the inner wall 200.

The first passage 510 connects the first and third communication holes 450a and 450c formed in the first lower plate 400 and the first gas hole 610 formed in the third lower plate 600, And includes an inlet hole 511, first and second branch passages 512 and 513, and first and second communicating portions 514 and 515.

The first inlet hole 511 is formed through the upper surface and the lower surface of the second lower plate 500 and is located on the front left side of the second lower plate 500 so as to correspond to the first gas hole 610.

The first branched passage 512 communicates the first inlet 511 with the first communicating portion 514 and the second branch passage 513 communicates with the first inlet 511 and the second communicating portion 515, .

In this case, for easy communication between the first and second branch passages 512 and 513 and the first and second communication portions 514 and 515, at least one of the first and second branch passages 512 and 513 It is preferable that a curved bent portion is formed in the branch passage.

The first communication part 514 is located below the first space chamber 150a and corresponds to the first communication hole 450a of the first lower plate 400. The first communication part 514 is located below the first space chamber 150a, The second space 515 is located below the third space 150c so as to correspond to the third communication hole 450c.

In this case, the first communicating portion 514 is preferably formed in a shape having a slit-like shape or a long hole like the first communication hole 450a except a portion communicating with the first branch passage 512 . The second communicating part 515 is preferably formed in the shape of a long hole or a slit like the third communication hole 450c except the part communicating with the first branch passage 512. [

The first and second branch passages 512 and 513 and the first and second communication portions 514 and 515 serve as a kind of channel through which the gas flows. 1 is formed only on the upper surface or the lower surface of the second lower plate 500, unlike the first inlet hole 511.

The second passage 520 communicates the second and fourth communication holes 450b and 450d formed in the first lower plate 400 and the second gas hole 620 formed in the third lower plate 600, And includes an inlet hole 521, third and fourth branch passages 522 and 523, and third and fourth communicating portions 524 and 525.

The second inflow hole 521 is formed through the upper surface and the lower surface of the second lower plate 500 and is located on the front right side of the second lower plate 500 to correspond to the second gas hole 620.

The third branch passage 522 communicates the second inlet hole 521 with the third communicating portion 524 and the fourth branch passage 523 communicates with the second inlet hole 521 and the fourth communicating portion 525, .

In this case, at least one of the third and fourth branch passages 522 and 523 is provided for easy communication between the third and fourth branch passages 522 and 523 and the third and fourth communication portions 524 and 525 It is preferable that a curved bent portion is formed in the branch passage.

The third communicating portion 524 is positioned below the first space chamber 150a region to correspond to the second communication hole 450b of the first lower plate 400 and the second communicating portion 515 is located below the first communicating hole 450b, And is located below the third space chamber 150c region so as to correspond to the third communication hole 450c of the third space chamber 150c.

In this case, the third communicating portion 524 is preferably formed in a shape having a slit-like shape or a long hole like the second communication hole 450b, except for a portion communicating with the second branch passage 513 . The fourth communicating portion 525 is preferably formed in a shape having a long hole or slit like the fourth communication hole 450d except a portion communicating with the fourth branch passage 523.

The third and fourth branch passages 522 and 523 and the third and fourth communication portions 524 and 525 serve as a kind of flow path through which the gas flows. Unlike the first and second inlet holes 511 and 521, it is preferably formed only on the upper surface or the lower surface of the second lower plate 500.

The third passage 530 allows the fifth communication hole 450e formed in the first lower plate 400 to communicate with the third gas hole 630 formed in the third lower plate 600. [

A first exhaust hole 531 penetrating the upper surface and the lower surface of the second lower plate 500 is formed on the third passage 530. The first exhaust hole 531 is formed to correspond to the third gas hole 630 And is located on the rear left side of the second lower plate 500.

A portion corresponding to the fifth communication hole 450e in the third passage 530 is formed in the form of a long hole like the fifth communication hole 450e or It is preferable that it is formed in a shape having a slit shape.

The fourth passage 540 connects the sixth communication hole 450f formed in the first lower plate 400 and the fourth gas hole 640 formed in the third lower plate 600. [

A second exhaust hole 541 is formed in the fourth passage 540 to penetrate the upper surface and the lower surface of the second lower plate 500 and the second exhaust hole 541 is formed to correspond to the fourth gas hole 640 And is located on the rear right side of the second lower plate 500.

In order to facilitate the gas flow to the sixth communication hole 450f, a portion corresponding to the sixth communication hole 450f in the fourth passage 540 is formed in the form of a long hole like the sixth communication hole 450f or It is preferable that it is formed in a shape having a slit shape.

Unlike the first and second exhaust holes 531 and 541 that pass through the upper surface and the lower surface of the second lower plate 500, the third and fourth passages 530 and 540 serve as a kind of channel through which the gas flows, It is preferable that the second lower plate 500 is formed only on the upper surface or the lower surface of the second lower plate 500.

The diameters of the first and second inlet holes 511 and 521 and the diameters of the first and second exhaust holes 531 and 541 are the same as the diameters of the first and second gas holes 610 and 620, It is preferable that the diameter is smaller than the diameter of the holes 630 and 640.

The diameters of the first and second gas holes 610 and 620 are preferably the same as the diameters of the gas supply nozzles of the load port and the third and fourth gas holes 630 and 640 Is preferably the same diameter as the gas exhaust nozzle of the load port, and the diameter of the gas supply nozzle and the gas exhaust nozzle of the load port have a relatively large diameter. The diameters of the first and second inlet holes 511 and 521 and the first and second exhaust holes 531 and 541 are greater than or equal to the diameters of the first to fourth gas holes 610, 620, 630, and 640 The widths of the first to fourth passages 510, 520, 530 and 540 must be increased correspondingly, so that the gas supply or exhaust efficiency may be lowered. Therefore, the diameters of the first and second inlet holes 511 and 521 and the first and second exhaust holes 531 and 541 are set to the first and second gas holes 610 and 620 and the third and fourth gas holes 630 and 630, 540 and 540. The first through fourth passages 510, 520, 530, 540 may be formed to have a diameter smaller than the diameter of the first through fourth passages 510, 520 , 530, and 540 are reduced in size, the wafer storage container 1 can be made compact.

Hereinafter, the third lower plate 600 of the main body 10 will be described.

As shown in FIGS. 1, 2 and 7, the third lower plate 600 is positioned at the lower portion of the second lower plate 500 to form the lowermost surface of the wafer storage container 1, First to fourth gas holes 610, 620, 630 and 640 are formed in the plate 600.

The first and second gas holes 610 and 620 serve as a gas supply hole for introducing the gas into the wafer storage container 1 by engaging with the gas supply nozzle of the load port as described above, (600), and are positioned on the front left and right sides of the third lower plate (600), respectively. in this case,

The first and second gas holes 610 and 620 are located in the inner side of the body 10 with respect to the lower portion of the housing chamber 250, that is, the first and second inner walls 200a and 200b.

As described above, the third and fourth gas holes 630 and 640 are combined with the gas exhaust nozzle of the load port, so that the gas supplied to the storage chamber 250 and the fumes of the wafer W are supplied to the gas port And is formed to pass through the upper and lower surfaces of the third lower plate 600 and are located at the rear left and right sides of the third lower plate 600, respectively.

In this case, the third and fourth gas holes 6300 and 640 are positioned inward of the main body 10 in a lower portion of the housing chamber 250, that is, the fifth and sixth inner walls 200e and 200f.

The diameter of the first and second gas holes 610 and 620 is preferably equal to the diameter of the gas supply nozzle of the load port and is preferably larger than the first and second inlet holes 511 and 521, 630 and 640 are equal to the diameter of the gas exhaust nozzle of the load port and larger than the first and second exhaust holes 531 and 541. [

As described above, the first to sixth outer walls 100a to 100f and the first to sixth inner walls 200a to 200f, which form the outer side surface of the main body 10, Due to the double wall structure, the main body 10 is provided with the compartment 250 made of the inner spaces of the first to sixth inner walls 200a to 200f, the first to sixth outer walls 100a to 100f, A space chamber 150 may be formed, which is a spacing space between the inner walls 200a to 200f.

The first to third lower plates 400, 500, 600 are coupled up and down. In other words, the second and third lower plates 500 and 600 are coupled to the lower portion of the first lower plate 400 coupled with the lower portions of the first through fifth reinforcing pillars 710a through 710e, 3 Lower plates 500 and 600 are preferably screwed so as to be easily detachable from the first lower plate 400.

As described above, since the first to third lower plates 400, 500, and 600 are coupled to each other, it is possible to more easily manufacture the space chamber 150 having various structures.

For example, the number and shape of the communication holes formed in the first lower plate 400 are variously formed, thereby forming the passages of the second lower plate 500, and by changing the number of the reinforcing pillars, The number or size of the chamber 150 can be easily controlled.

Of course, unlike the above, the lower plate of the wafer storage container 1 may be formed as one lower plate rather than a combination of the first to third lower plates 400, 500 and 600.

Hereinafter, the storage chamber 250 of the main body 10 will be described.

As shown in FIGS. 1, 2 and 8, the storage chamber 250 is formed in the inner side of the first to sixth inner walls 200a to 200f in the main body 10. The front of the housing chamber 250 is opened by the front opening.

The outer side surface, the upper surface and the lower surface of the storage chamber 250 are formed by the first to sixth inner walls 200a to 200f, the upper plate 300 and the first lower plate 400, respectively.

The first and second inner walls 200a and 200b form the front left and right outer sides of the housing chamber 250. Third and fourth inner walls 200c and 200d form the rear left and right outer sides of the accommodating chamber 250. [ The fifth and sixth inner walls 200e and 200f form the rear face of the storage chamber 250. [ The upper plate 300 forms the upper surface of the storage chamber 250. The first lower plate 400 forms the bottom surface of the storage chamber 250.

The first to sixth space chambers 150a to 150f are located in the circumferential direction of the region excluding the front opening portion of the storage chamber 250. [

A pair of wafer supports 720 for supporting the wafer W are provided on both sides of the inside of the housing chamber 250. The wafer support bodies 720 are disposed on both sides of the housing chamber 250,

Hereinafter, the spatial chamber 150 of the main body 10 will be described.

The space chamber 150 is formed by a space between the first to sixth outer walls 100a to 100f and the first to sixth inner walls 200a to 200f of the main body 10 as shown in Figs. 1, 2 and 8 And is composed of first to sixth space chambers 150a to 150f which are independent from each other by the first to fifth reinforcing pillars 710a to 710e.

The first to sixth spatial chambers 150a to 150f are formed such that the outer surfaces of the first to sixth spatial chambers 150a to 150f are formed by the first to sixth outer walls 100a to 100f, The inner surfaces of the first to sixth spatial chambers 150a to 150f are formed by the first to sixth spatial chambers 200a to 200f.

As described above, the first to sixth outer walls 100a to 100f and the first to sixth inner walls 200a to 200f, which form the outer surface and the inner surface of the first to sixth spatial chambers 150a to 150f, The first to sixth spatial chambers 150a to 150f may have a curved arc shape having a curvature as a whole. In this case, it is preferable that the first to sixth outer walls 100a to 100f and the first to sixth inner walls 200a to 200f have the same spacing distance, 150a to 150f are formed to have a constant width.

The first to sixth space chambers 150a to 150f are formed so as to be positioned in the circumferential direction of the storage chamber 250. More specifically, the first and second space chambers 150a and 150b are positioned on the front left and right outer sides of the center point of the wafer W housed in the housing chamber 250, respectively. Third and fourth spatial chambers 150c and 150d are located on the rear left and right outer sides, respectively, with respect to the center point of the wafer W housed in the storage chamber 250. The fifth and sixth space chambers 150e and 150f are located on the rear outer side of the storage chamber 250 at the rear of each of the third and fourth spatial chambers 150c and 150d.

The third space chamber 150c and the fifth space chamber 150e along the periphery of the housing chamber 250 from the left front side to the right front side with respect to the housing chamber 250. In other words, A sixth space chamber 150f, a fourth space chamber 150d, and a second space chamber 150b.

The first space chamber 150a and the second space chamber 150b are opposed to each other and the third space chamber 150c and the fifth space chamber 150e are opposed to each other.

A cover 20 is installed in front of the first and second space chambers 150a and 150b.

The cover 20 forms a front surface of the first and third spatial chambers 150a and 150c and simultaneously connects the upper plate 300 and the first to third lower plates 400, And serves to firmly fix the front portion of the wafer storage container 1.

The top and bottom surfaces of the first space chamber 150a are formed by the top plate 300 and the first bottom plate 400, respectively. The left and right sides of the first space chamber 150a are formed by a first outer wall 100a and a first inner wall 200a, respectively. The front and rear surfaces of the first space chamber 150a are formed by a cover 20 and a first reinforcing column 710a, respectively. A first communication hole 450a is formed in the first lower plate 400 forming the bottom surface of the first space chamber 150a, that is, the bottom surface of the first space chamber 150a.

The top and bottom surfaces of the second space chamber 150b are formed by the top plate 300 and the first bottom plate 400, respectively. The left and right sides of the second space chamber 150b are formed by a second inner wall 200b and a second outer wall 100b, respectively. The front and rear surfaces of the second space chamber 150b are formed by a cover 20 and a second reinforcing column 710b, respectively. A second communication hole 450b is formed in the first lower plate 400 forming the bottom surface of the second space chamber 150b, that is, the bottom surface of the second space chamber 150b.

The top and bottom surfaces of the third spatial chamber 150c are formed by the top plate 300 and the first bottom plate 400, respectively. The left and right sides of the third spatial chamber 150c are formed by a third outer wall 100c and a third inner wall 200c, respectively. The front space and the rear space of the third space chamber 150c are formed by the first reinforcing pillar 710a and the third reinforcing pillar 710c, respectively. A third communication hole 450c is formed in the first lower plate 400 forming the bottom surface of the third space chamber 150c, that is, the bottom surface of the third space chamber 150c.

The top and bottom surfaces of the fourth space chamber 150d are formed by the top plate 300 and the first bottom plate 400, respectively. The left and right sides of the fourth space chamber 150d are formed by a fourth inner wall 200d and a fourth outer wall 100d, respectively. The front and rear surfaces of the fourth space chamber 150d are formed by the second reinforcing pillar 710b and the fourth reinforcing pillar 710d, respectively. A fourth communication hole 450d is formed in the first lower plate 400 forming the bottom surface of the fourth space chamber 150d, that is, the bottom surface of the fourth space chamber 150d.

The top and bottom surfaces of the fifth space chamber 150e are formed by the top plate 300 and the first bottom plate 400, respectively. The left and right sides of the fifth space chamber 150e are formed by a fifth outer wall 100e and a fifth inner wall 200e, respectively. The front space and the rear space of the fifth space chamber 150e are formed by the third reinforcing pillar 710c and the fifth reinforcing pillar 710e, respectively. A fifth communication hole 450e is formed in the first lower plate 400 forming the bottom surface of the fifth space chamber 150e, that is, the bottom surface of the fifth space chamber 150e.

The top and bottom surfaces of the sixth space chamber 150f are formed by the top plate 300 and the first bottom plate 400, respectively. The left and right sides of the sixth space chamber 150f are formed by a sixth inner wall 200f and a sixth outer wall 100f, respectively. The front space and the rear space of the sixth space chamber 150f are formed by the fifth reinforcing pillar 710e and the fifth reinforcing pillar 710e, respectively. A sixth communication hole 450f is formed in the first lower plate 400 located on the bottom surface of the sixth space chamber 150f, that is, the sixth space chamber 150f.

Although the wafer storage container 1 according to the preferred embodiment of the present invention has been described as having the first to sixth spatial chambers 150a to 150f, that is, six spatial chambers, the first to sixth spatial chambers The first to sixth outer walls 100a to 100f, the first to sixth inner walls 200a to 200f, and the first to sixth inner walls 100a to 100f, The number of the first to sixth communication holes 450a to 450f and the first to fifth reinforcing pillars 710a to 710e may vary.

The first to fifth reinforcing pillars 710a to 710e installed to connect the upper plate 300 and the first lower plate 400 of the main body 10 will be described below.

As shown in Figures 1, 2, 8 and 9 (a), 9 (b), the first reinforcing column 710a has a first outer wall 100a, a first inner wall 200a and a third outer wall 100c And the third inner wall 200c and is installed between the first and third spatial chambers 150a and 150c.

The second reinforcing column 710b connects the second outer wall 100b and the second inner wall 200b to the fourth outer wall 100d and the fourth inner wall 200d and connects the second space chamber 150b and the fourth space chamber 150b, (150d).

The third reinforcing column 710c connects the third outer wall 100c and the third inner wall 200c to the fifth outer wall 100e and the fifth inner wall 200e and connects the third space chamber 150c and the fifth space chamber 150c, (150e).

The fourth reinforcing column 710d connects the fourth outer wall 100d and the fourth inner wall 200d to the sixth outer wall 100f and the sixth inner wall 200f and connects the fourth space chamber 150d and the sixth space chamber 150d, (150f).

The fifth reinforcing column 710e connects the fifth outer wall 100e and the fifth inner wall 200e to the sixth outer wall 100f and the sixth inner wall 200f and connects the fifth space chamber 150f and the sixth space chamber 150f, (150f).

The first to fifth reinforcing pillars 710a to 710e are respectively installed between the first to sixth space chambers 150f to divide the first to sixth space chambers 150a to 150f into separate independent spaces The upper plate 300 and the first lower plate 400 are connected to each other to support the wafer storage container 1 more rigidly.

The upper portions of the first to fifth reinforcing pillars 710a to 710e are fixed to the first to sixth reinforcing pillar upper fixing grooves 330a to 330e of the upper plate 300 and are coupled by screwing.

The lower portions of the first to fifth reinforcing pillars 710a to 710e are screwed to the first to sixth reinforcing column lower fixing grooves 430a to 430e of the first lower plate 400. [

Outer wall engaging grooves 711 and inner wall engaging grooves 712 are formed on both sides of the first to fifth reinforcing pillars 710a to 710e, respectively. The first to sixth outer walls 100a to 100f are inserted into the outer wall coupling groove 711 and the first to sixth inner walls 200a to 200f are inserted into the inner wall coupling groove 712. [

The first and second reinforcing pillars 710a and 710b have the same shape as shown in Fig. 9A and the third to fifth reinforcing pillars 710c to 710e have the same shape as shown in Fig. 9B As shown, the shape is the same.

The thickness t1 of the first and second reinforcing pillars 710a and 710b is preferably smaller than the thickness t2 of the third to fifth reinforcing pillars 710c to 710e, This facilitates the installation of the wafer support 720 installed adjacent to the columns 710a and 710b.

The first to fifth reinforcing pillars 710a to 710e, the upper plate 300, the first lower plate 400, the first to sixth outer walls 100a to 100f, and the first to sixth inner walls 200a- The first to sixth outer walls 100a to 100f and the first to sixth inner walls 200a to 200f can be easily separated from the main body 10 of the wafer storage container 1 .

For example, after the upper plate 300 or the first lower plate 400 coupled to the first through fifth reinforcing pillars 710a through 710e by screwing is separated from the first through fifth reinforcing pillars 710a through 710e The first to sixth outer walls 100a to 100f fitted in the outer wall coupling grooves 711 of the first to fifth reinforcing pillars 710a to 710e are taken out and separated or the first to fifth reinforcing pillars 710a- The first to sixth inner walls 200a to 200f that are respectively fitted in the inner wall engaging grooves 712 of the first to sixth inner walls 710e can be taken out and separated.

When the first to sixth outer walls 100a to 100f and the first to sixth inner walls 200a to 200f are configured to be easily detachable from the wafer storage container 1, It is advantageous in terms of maintenance.

For example, when the wafer storage container 1 is used for a long period of time, the first to sixth inner walls 200a to 200f, through which a relatively large amount of gas and fumes of the wafer W flow, In this case, the life of the wafer storage container 1 can be easily extended by separating and replacing or cleaning the first to sixth inner walls 200a to 200f.

Hereinafter, the wafer support 720 installed in the storage chamber 250 of the main body 10 will be described.

10 and 11, the wafer support 720 includes a top plate 300 and a first bottom plate 400 (not shown) for supporting the wafer W on both sides of the inside of the storage chamber 250 of the main body 10. [ And a plurality of upper and lower wafer supports 721 and a connecting member 723 connecting the wafer support 721 and an intermediate member 725 formed on the connecting member 723 do.

The number of wafer supports 721 arranged in the upward and downward directions may vary depending on the number of the wafers W accommodated in the accommodating chamber 250 and is preferably 25 to 30.

The wafer support table 721 is formed in a curved shape with one side having a curvature equal to the curvature of the wafer W, and a plurality of ribs 722 can be formed on the one side.

The upper surface of the rib 722 contacts the lower surface of the wafer W to thereby support the wafer W. As a result, the contact area between the wafer W and the wafer support table 721 becomes smaller, Can be prevented from being damaged. Further, since one side of the wafer support table 721 is formed in a curved shape having a curvature equal to the curvature of the wafer W, the support of the wafer W can be further facilitated.

The connecting member 723 serves to connect the wafer supports 721 arranged in a plurality of rows up and down, and a plurality of the wafer supports 721 may be provided.

The intermediate member 725 is formed on the upper portion and the lower portion of the connecting member 723 and the intermediate member 725 is screwed into the upper plate 300 and the first lower plate 400, May be coupled to the top plate 300 and the first bottom plate 400.

11, when a pair of wafer supports 720 having the above-described structure are coupled between the upper plate 300 and the first lower plate 400 and positioned on both sides of the storage chamber 250, It is preferable that a plurality of holes 210 of the second and fourth inner walls 200b and 200d are positioned between the wafer supports 721 arranged in the upper and lower directions of the wafer supporter 720.

The region length d1 in which the plurality of holes 210 are formed in the second and fourth inner walls 200b and 200d is preferably larger than the length d2 of the wafer support 721 of the wafer support 720 Do.

Of course, even in the case of the wafer supporter 720 located on the first and third inner walls 200a and 200c opposite to the second and fourth inner walls 200b and 200d, the wafer supporter 721, It is preferable that a plurality of holes 210 of the first and third inner walls 200a and 200c are positioned between the first and second inner walls 200a and 200c.

The length of the region where the plurality of holes 210 are formed in the first and third inner walls 200a and 200c is preferably larger than the length of the wafer support 721 of the wafer support 720.

Due to the above structure, the gas can be easily supplied through the plurality of holes 210 of the first to fourth inner walls 200a to 200d and between the wafer supports 721 arranged in a plurality of up and down directions . Therefore, the fume remaining on the surface of the wafer W supported on the wafer support table 721 is not generated, and the fumes can be easily removed.

The wafer support 720, the connecting member 723, and the intermediate member 725 may be separately manufactured and assembled, or may be integrally formed by injection of a plastic material or the like.

The wafer support table 721 is formed on each of the third inner wall 200a and the fourth inner wall 200d to support the wafer W unlike the structure of the wafer support 720 described above.

A plurality of holes 210 of the third and fourth inner walls 200c and 200d are arranged on the third inner wall 200c and the fourth inner wall 200d in the upward and downward directions, And a plurality of wafer supports 721 arranged in a downward direction.

The length of the region where the plurality of holes 210 are formed in the third inner wall 200c and the fourth inner wall 200d is preferably larger than the length of the wafer support table 721. [

The wafer support table 721 formed on each of the third and fourth inner walls 200a and 200d may be formed integrally with the third and fourth inner walls 200a and 200d by plastic injection or the like, 200a, and 200d, respectively.

As described above, when the third and fourth inner walls 200c and 200d are separated by the above-described separation structure by forming the support table 721 on each of the third inner wall 200c and the fourth inner wall 200d, 3 and 4 inner walls 200c and 200d can be also separated from each other. Therefore, as the third and fourth minute inner walls 200c and 200d are separated, the support 721, which can be corroded or contaminated by the gas and the fumes of the wafer W, can be easily separated, Can be easily cleaned and replaced, so that the life of the wafer storage container 1 can be easily extended.

Hereinafter, the removal of the fume of the wafer W by supplying and discharging the gas in combination with the load port in the wafer storage container 1 according to the preferred embodiment of the present invention having the above-described configuration will be described.

First, when the wafer storage container 1 is coupled to the upper portion of the load port, the gas supply nozzle of the load port communicates with the first and second gas holes 610 and 620 of the third lower plate 600 And the gas exhaust nozzle of the load port is connected to the third and fourth gas holes 630 and 640 of the third lower plate 600 to communicate with each other.

Accordingly, when gas is supplied from the gas supply nozzle of the load port and the gas is introduced into the first gas hole 610, the first branch passage 512 of the first passage 510 through the first inlet hole 511 The gas flows into the first communication hole 450a along the second branch passage 450a to be filled in the first space chamber 150a and the gas flows into the third communication hole 450c along the second branch passage 513, 3 space chamber 150c.

When the gas is supplied from the gas supply nozzle of the load port to the second gas hole 620, the third branch passage 522 is opened through the second inlet hole 521 of the second passage 520, The gas flows into the second communication hole 450b along the fourth branch passage 450b to be filled in the second space chamber 150b and the gas flows into the fourth communication hole 450d along the fourth branch passage 523, 4 space chamber 150d.

The gas filled in each of the first to fourth space chambers 150a to 150d is uniformly supplied to the accommodating chamber 250 by the supply pressure of the gas supply nozzle of the load port and the suction force of the gas exhaust nozzle of the load port .

In detail, a gas supply nozzle of the load port is activated to supply gas to each of the first to fourth spatial chambers 150a to 150d to generate a supply pressure, and the fifth and sixth space chambers 150e and 150f, The gas exhaust nozzle of the load port is activated to generate a suction force.

Accordingly, the gas is filled in the first to fourth spatial chambers 150a to 150d by the supply pressure, and then the gas is supplied to the accommodating chambers 150a to 150d through the plurality of holes 210 of the first to fourth inner walls 200a to 200d, And the gas supplied to the storage chamber 250 by the suction force is discharged to the fifth and sixth space chambers 150e and 150f.

As the supply and discharge of the gas are continuously performed, a flow of gas is generated in the order of the first to fourth spatial chambers 150a to 150d, the storage chamber 250, and the fifth and sixth spatial chambers 150e and 150f And the gas filled in the first to fourth spatial chambers 150a to 150d by the supply pressure and the suction force flows through the plurality of holes 210 of the first to fourth inner walls 200a to 200d, It can be uniformly supplied to the accommodating chamber 250 as a kind of plane surface as shown in Fig.

Therefore, unlike the conventional wafer storage container in which the gas is supplied in a linear manner, gas is not supplied to only a certain region, and the occurrence of a dead zone in which the fumes of the wafer W can not be removed can be prevented.

In this case, it is preferable that the plurality of holes 210 of the first to fourth inner walls 200a to 200d have (mxn) matrix shapes, m> 3, and the plurality of holes 210 communicate with each other .

As described above, the plurality of holes 210 of the first to fourth inner walls 200a to 200d are provided between the upper and lower sides of the plurality of supports 721 that support the plurality of wafers W, respectively The gas can be supplied to each of the surfaces of the plurality of wafers W, whereby the fumes of the wafers W can be removed more efficiently.

When the gas is supplied to the housing chamber 250 through the plurality of holes 210 of the first to fourth inner walls 200a to 200d, the gas is filled in the first to fourth space chambers 150a to 150d The inner pressure of the first to fourth space chambers 150a to 150d is smaller than that of the first to fourth inner walls 200a to 200d, Which is higher than the internal pressure of the valve. Therefore, the gas supplied to the housing chamber 250 has a high pressure and a high flow rate, so that the gas does not simply leak into the plurality of holes 210 but has the effect of jetting gas from the nozzle have.

Therefore, the gas can be uniformly supplied to the center region of the wafer W, thereby effectively removing the residual fumes on the surface of the wafer W housed in the storage chamber 250.

When the gas is supplied to the storage chamber 250 as described above, the fumes remaining on the surface of the wafer W stored in the storage chamber 250 and the supplied gas are supplied to the fifth and sixth inner walls 200e and 200f To the fifth and sixth spatial chambers 150e and 150f through the plurality of holes 210 of the first and sixth chambers 150e and 150f.

The gas and the fumes flowing into the fifth space chamber 150e flow into the third passage 530 through the fifth communication hole 450e by the suction force generated at the exhaust nozzle of the load port, And is exhausted to the exhaust nozzle of the load port through the hole 531 and the third gas hole 630.

The gas and the fumes flowing into the sixth space chamber 150f flow into the fourth passage 540 through the sixth communication hole 450f by the suction force generated in the exhaust nozzle of the load port, The second exhaust hole 541 and the fourth gas hole 640 are exhausted to the exhaust nozzle of the load port.

Since the gas present in the housing chamber 250 and the fumes of the wafer W are exhausted as a whole through the fifth and sixth inner walls 200e and 200f located behind the housing chamber 250, The gas can be considered to be exhausted. Therefore, unlike the conventional wafer storage container in which the gas is exhausted on a line, the gas and the fumes of the wafer W are not concentratedly exhausted only in a certain area, and the gas and the fumes can be efficiently exhausted.

In addition, since the internal gases of the storage chamber 250 are replaced by the gas continuously supplied in the first to fourth spatial chambers 150d, the cleanliness can be maintained in the storage chamber 250, Oxidation of the wafer W stored in the chamber 250 can be effectively prevented.

12, the supply and the exhaust of the gas are carried out through the plurality of holes 210 of the first to fourth inner walls 200a to 200d and the plurality of holes 210 of the fifth and sixth inner walls 200e and 200f, respectively, (On the surface) of the storage chamber 250 by the seal member 210. Unlike the conventional wafer storage container in which the gas is supplied and exhausted in a line-by-line manner, the gas supply and exhaust are not concentrated in only a limited area. Therefore, the flow of the gas in the housing chamber 250 flows uniformly, so that the gas can be smoothly supplied and exhausted.

In the case of the wafer storage container 1 according to the preferred embodiment of the present invention described above, the gas is supplied from the first to fourth space chambers 150a to 150d to the storage chamber 250 to serve as a kind of gas supply chamber The fifth and sixth space chambers 150e and 150f serve as a kind of gas exhaust chamber by exhausting the gas supplied to the storage chamber 250 and the fumes of the wafer W. However, The roles of the first to fourth gas holes 610, 620, 630, and 640 to be combined with the gas exhaust nozzle may vary.

For example, when the first gas hole 610 is engaged with the gas exhaust nozzle of the load port, and the second through fourth gas holes 610 are combined with the gas supply nozzle of the load port, The first and third space chambers 150a and 150c communicated with the second to fourth gas holes 610 serve as gas exhaust chambers for exhausting gases and fumes, And the six space chambers 150b, 150d, 150e and 150f function as a gas supply chamber for supplying gas.

The gas flow in the wafer storage container 1 may be changed depending on which of the gas supply nozzles of the load port and the gas discharge nozzle is coupled with the first to fourth gas holes 610, 620, 630, and 640 The fumes of the wafer W can be efficiently removed according to the state of the various wafers W by changing the gas flow in the wafer storage container 1 according to the manufacturing process of the wafers W. [

Hereinafter, a heater and a sensor provided inside the space chamber 150 of the main body 10 will be described.

The sensor (not shown) and the heater (not shown) may be installed in at least one of the first to sixth space chambers 150a to 150f.

The heater can control the temperature and humidity inside the wafer storage container 1 by heating the interior of the wafer storage container 1. [ The temperature of the gas supplied to the storage chamber 250 through the first to fourth space chambers 150a to 150d can be reduced by heating the temperature of the wafer W stored in the storage chamber 250, The fumes of the wafer W can be removed more efficiently.

The heater is disposed on at least one of the first to sixth outer walls 100a to 100f and the inner wall of the first to sixth inner walls 200a to 100f so as to be positioned inside at least one of the first to sixth spatial chambers 150a to 150f. To 200f). If the heater is installed on the outer surface of at least one of the first to sixth inner walls 200a to 200f, the first to sixth inner walls 200a to 200f are provided in the region where the hole 210 is not formed .

The sensor is a monitoring sensor for measuring the environment inside the wafer storage container 1 and can measure the temperature inside the wafer storage container 1 controlled by the heater and the humidity inside the wafer storage container 1. [

As described above, since the heater or the sensor is installed inside at least one of the first to sixth space chambers 150a to 150f, unlike the conventional wafer storage container, the storage chamber 250, in which the wafer W is stored, It is possible to control the environment inside the wafer storage container 1, that is, to adjust the temperature or humidity, or to measure the temperature or the humidity, while sufficiently ensuring the space of the wafer storage container 1. [

Hereinafter, the blocking member 470 for blocking the gas flow in the space chamber 150 will be described.

5A and 5B, the blocking member 470 includes a hinge portion connecting the end portions of the blocking plate 471 and the blocking plate 471 to the first lower plate 400 And is installed on the first lower plate 400 so as to be positioned above the first communication hole 450a in the first space chamber 150a.

When the gas is supplied from the gas supply nozzle of the load port and flows into the first space chamber 150a through the first communication hole 450a, as shown in FIG. 5 (a) The blocking plate 471 is rotated upward about the hinge portion 472 so that the gas is easily supplied into the first space chamber 150a through the first communication hole 450a.

When the supply of the gas from the gas supply nozzle of the load port is stopped, the supply pressure of the gas for rotating the shutoff plate 471 disappears, so that the shutoff plate 471 is moved to the hinge portion 472 to cover the first communication hole 450a to prevent the gas from flowing back from the first space chamber 150a to the first communication hole 450a.

The blocking member 470 may be disposed on the first to fourth communication holes 450b to 450d in the first to fourth spatial chambers 150b to 150d as well as the first to fourth spatial chambers 150a, And may be installed in the lower plate 400.

This blocking member 470 can prevent the gas from flowing back toward the gas supply nozzle of the rod port even if the supply of gas is stopped at the gas supply nozzle of the load port. Also, even if the wafer storage container 1 is separated from the load port, the gas present in the space chamber 150 can be prevented from flowing out of the wafer storage container 1, together with the backflow prevention means to be described later.

Hereinafter, the backflow preventing means for preventing the back flow of the gas flow in the space chamber 150 will be described.

The backflow prevention means may be installed in the first branch passage 512 of the first passage 510. Accordingly, it is possible to prevent the gas flowing into the first space chamber 150a along the first gas hole 610 and the first branch passage 512 from flowing back to the first branch passage 512 again.

The backflow prevention means may be installed in the second branch passage 513 of the first passage 510. Therefore, the gas introduced into the third space chamber 150c along the first gas hole 610 and the second branch passage 513 can be prevented from flowing back to the second branch passage 513 again.

The backflow prevention means may be installed in the third branch passage 522 of the second passage 520. Accordingly, the gas introduced into the second space chamber 150c along the second gas hole 620 and the third branch passage 522 can be prevented from flowing back to the third branch passage 522 again.

The backflow prevention means may be installed in the fourth branch passage 523 of the second passage 520. Therefore, the gas introduced into the fourth space chamber 150d along the second gas hole 620 and the fourth branch passage 523 can be prevented from flowing back to the fourth branch passage 523 again.

The backflow prevention means may be installed in the third passage 530. Therefore, the gas exhausted from the fifth space chamber 150e to the third gas hole 630 through the third passage 530 and the fumes of the wafer W are prevented from flowing back to the fifth space chamber 150e can do.

The backflow prevention means may be installed in the fourth passage 540. Therefore, the gas discharged from the sixth space chamber 150f to the fourth gas hole 640 through the fourth passage 540 and the fumes of the wafer W are prevented from flowing back to the sixth space chamber 150f again. can do.

As described above, the backflow prevention means is installed in the first to fourth passages 510, 520, 530, and 540, so that the flow of the gas in the space chamber 150 composed of the first to sixth spatial chambers 150a to 150f It is possible to prevent the backflow of the wafer storage container 1 and to further facilitate the supply of the gas to the wafer storage container 1 and the exhaust of the gas.

In detail, as described above, the gas supply and exhaust in the wafer storage container 1 are controlled by the configuration of the first to sixth spatial chambers 150a to 150f, the supply pressure of the gas supply nozzle of the load port, Can be uniformly achieved by the organic coupling of the suction force of the gas exhaust nozzle of the load port. If the supply of the gas in the first to fourth space chambers 150a to 150d is not smoothly performed by the back flow of the gas or the exhaust of the gas in the fifth and sixth space chambers 150e and 150f is not performed, It is impossible to smoothly supply and exhaust gas by the supply pressure and the suction force. Therefore, by providing the above-described backflow prevention means, it is possible to prevent backflow of the gas flow in the first to sixth spatial chambers 150a to 150f, whereby the supply of the gas inside the wafer storage container 1 and the exhaust of the gas So that it can be performed smoothly.

The backflow prevention means may be provided in the first to fourth gas holes 610, 620, 630, and 640, and the backflow prevention means may be provided in the first to fourth gas holes 610, 620, 630, and 640 when the wafer storage container 1 is separated from the load port. The gas in the first to sixth space chambers 150a to 150f communicated with the fourth gas holes 610, 620, 630, and 640 is prevented from escaping to the outside of the wafer storage container 1. [

The above-described backflow prevention means (not shown) may be a check valve which prevents backflow by flowing gas in one direction.

Hereinafter, a flow measurement sensor for measuring the gas flow in the space chamber 150 will be described.

Flow measurement sensors may be respectively formed in the first to fourth passages 510, 520, 530, and 540 in which the backflow prevention means is installed.

The flow measurement sensor formed in the first and second passages 510 and 520 can measure the flow of the gas supplied to the first to fourth spatial chambers 150a to 150d through the first and second passages 510 and 520 have.

The flow measurement sensor formed in the third and fourth passages 530 and 540 can measure the flow of gas exhausted through the third and fourth passages 530 and 540 from the fifth and sixth spatial chambers 150e and 150f .

Therefore, when the fumes of the wafer W stored in the storage chamber 250 of the wafer storage container 1 are removed, the flow measurement sensor is used to determine whether the supply of the gas inside the wafer storage container 1 and the gas exhaustion are smooth .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the following claims Or modified.

1: wafer storage container 10: main body
20: cover 100: outer wall part
100a: first outer wall 100b: second outer wall
100c: third outer wall 100d: fourth outer wall
100e: fifth outer wall 100f: sixth outer wall
150: space chamber 150a: first space chamber
150b: second space chamber 150c: third space chamber
150d: fourth spatial chamber 150e: fifth spatial chamber
150f: fifth space chamber 200: inner wall part
200a: first inner wall 200b: second inner wall
200c: third inner wall 200d: fourth inner wall
200e: fifth inner wall 200f: sixth inner wall
210: hole 250: compartment
300: upper plate 310: outer wall upper fixing groove
320: separating wall upper fixing groove 330a: first reinforcing column upper fixing groove
330b: second reinforcing column upper fixing groove 330c: third reinforcing column upper fixing groove
330d: fourth reinforced column upper fixing groove 330e: fifth reinforced column upper fixing groove
400: first lower plate 410: outer wall lower fixing groove
420: separating wall lower fixing groove 430a: first reinforcing column lower fixing groove
430b: second reinforcing column lower fixing groove 430c: third reinforcing column lower fixing groove
430d: fourth reinforcing column lower fixing groove 430e: fifth reinforcing column lower fixing groove
450a: first communication hole 450b: second communication hole
450c: third communication hole 450d: fourth communication hole
450e: fifth communication hole 450f: sixth communication hole
470: blocking member 471: blocking plate
472; Hinge part 500: second lower plate
510: first passage 511: first inlet hole
512: first branch passage 513: second branch passage
514: first communicating part 515: second communicating part
520: second passage 521: second inlet hole
522: third branch passage 523: fourth branch passage
524: third communicating part 525: fourth communicating part
530: Third passage 531: First exhaust hole
540: fourth passage 541: second exhaust hole
600: third lower plate 610: first gas hole
620: second gas hole 630: third gas hole
640: fourth gas hole 710a: first reinforcing column
710b: second reinforcing column 710c: third reinforcing column
710d: fourth reinforcement column 710e: fifth reinforcement column
711: outer wall joining groove 712: inner wall joining groove
720: Support 721: Support
722: rib 723: connecting member
725: intermediate goods

Claims (18)

A wafer storage container comprising a main body having a front opening opened frontward to receive a wafer therein,
An outer wall portion constituting an outer side surface in a region excluding the front opening portion of the main body;
An inner wall portion spaced inwardly from the outer wall portion;
A storage chamber which is made up of an inner space of the inner wall portion and accommodates the wafer;
A wafer support provided on both sides of the inside of the accommodating chamber to support the wafer housed in the accommodating chamber; And
A plurality of space chambers formed as a space between the outer wall portion and the inner wall portion, the space chambers being independent from each other; And
And a lower plate which forms a bottom surface of the main body,
A plurality of holes communicating with the plurality of space chambers and the storage chambers are formed in the inner wall portion,
At least one of the plurality of space chambers supplies gas to the storage chamber through the plurality of holes, and at least one of the plurality of space chambers exhausts gas of the storage chamber through the plurality of holes,
Wherein the lower plate includes a gas hole formed in a bottom surface of the lower plate so as to be located in an inner direction of the main body than the inner wall part; A communication hole formed on an upper surface of the lower plate so as to be located in the space chamber; And a passage formed in the lower plate to communicate the gas hole and the communication hole.
The method according to claim 1,
Wherein the wafer support includes a plurality of wafer supports arranged in the upward and downward directions.
A wafer storage container comprising a main body having a front opening opened frontward to receive a wafer therein,
An outer wall portion constituting an outer side surface in a region excluding the front opening portion of the main body;
An inner wall portion spaced inwardly from the outer wall portion;
A storage chamber which is made up of an inner space of the inner wall portion and accommodates the wafer;
A wafer support table which is arranged on the inner wall part in a plurality of upward and downward directions to support the wafer stored in the storage chamber;
A plurality of space chambers formed as a space between the outer wall portion and the inner wall portion, the space chambers being independent from each other; And
And a lower plate which forms a bottom surface of the main body,
A plurality of holes communicating with the plurality of space chambers and the accommodating chambers are formed in the inner wall portion,
At least one of the plurality of space chambers supplies gas to the storage chamber through the plurality of holes, and at least one of the plurality of space chambers exhausts gas of the storage chamber through the plurality of holes,
Wherein the lower plate includes a gas hole formed in a bottom surface of the lower plate so as to be located in an inner direction of the main body than the inner wall part; A communication hole formed on an upper surface of the lower plate so as to be located in the space chamber; And a passage formed in the lower plate to communicate the gas hole and the communication hole.
delete The method according to claim 2 or 3,
The plurality of holes being formed in the form of a matrix,
Wherein a plurality of holes in the form of a matrix are located between the wafer supports arranged in a plurality of the upward and downward directions.
The method according to claim 1 or 3,
And the lower plate is detachably coupled to the main body.
delete The method according to claim 1 or 3,
Wherein the lower plate comprises:
A first lower plate forming a bottom surface of the body, a second lower plate located below the first lower plate, and a third lower plate located below the second lower plate,
Wherein the gas holes are formed in the third lower plate, the communication holes are formed in the first lower plate, and the passages are formed in the second lower plate.
The method according to claim 1 or 3,
Further comprising a backflow preventing means for preventing back flow of the gas flow in the space chamber.
The method according to claim 1 or 3,
And a flow measurement sensor for measuring a gas flow in the space chamber.
The method according to claim 1 or 3,
And a blocking member for blocking the gas flow in the space chamber.
The method according to claim 1 or 3,
And the inner wall portion is detachably coupled to the main body.
The method according to claim 1 or 3,
Wherein the outer wall portion and the inner wall portion have a convex curvature toward the rear of the main body.
14. The method of claim 13,
Wherein a distance between the outer wall portion and the inner wall portion is the same.
The method according to claim 1 or 3,
And a reinforcing column installed between the plurality of space chambers.
delete The method according to claim 1 or 3,
The width of the plurality of space chambers is constant,
Wherein a cross-sectional width of the accommodating chamber increases toward the front opening.
The method according to claim 1 or 3,
Wherein the plurality of space chambers comprises:
First and second space chambers located on the front left and right outer sides with respect to the center point of the wafer stored in the storage chamber,
Third and fourth space chambers respectively located on the rear left and right outer sides with respect to the center point of the wafer housed in the storage chamber;
And fifth and sixth space chambers located on the outer side of the accommodating chamber at the rear of each of the third and fourth space chambers.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116659593A (en) * 2023-08-01 2023-08-29 浙江果纳半导体技术有限公司 Wafer storage detection method

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Publication number Priority date Publication date Assignee Title
KR20000019931A (en) * 1998-09-16 2000-04-15 윤종용 Apparatus of supplying gas for producing semiconductor device
JP2012004199A (en) 2010-06-15 2012-01-05 Shin Etsu Polymer Co Ltd Substrate storage container
KR101366135B1 (en) 2013-10-10 2014-02-25 주식회사 엘에스테크 Post purge system
KR20150087154A (en) * 2015-03-16 2015-07-29 우범제 Apparatus for removing fume

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000019931A (en) * 1998-09-16 2000-04-15 윤종용 Apparatus of supplying gas for producing semiconductor device
JP2012004199A (en) 2010-06-15 2012-01-05 Shin Etsu Polymer Co Ltd Substrate storage container
KR101366135B1 (en) 2013-10-10 2014-02-25 주식회사 엘에스테크 Post purge system
KR20150087154A (en) * 2015-03-16 2015-07-29 우범제 Apparatus for removing fume

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116659593A (en) * 2023-08-01 2023-08-29 浙江果纳半导体技术有限公司 Wafer storage detection method
CN116659593B (en) * 2023-08-01 2023-10-20 浙江果纳半导体技术有限公司 Wafer storage detection method

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