JP4508423B2 - プラズマ処理システムにおいてエッチング終点を決定するための方法および装置 - Google Patents

プラズマ処理システムにおいてエッチング終点を決定するための方法および装置 Download PDF

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JP4508423B2
JP4508423B2 JP2000572928A JP2000572928A JP4508423B2 JP 4508423 B2 JP4508423 B2 JP 4508423B2 JP 2000572928 A JP2000572928 A JP 2000572928A JP 2000572928 A JP2000572928 A JP 2000572928A JP 4508423 B2 JP4508423 B2 JP 4508423B2
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current
electrode
signal
circuit
end point
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JP2000572928A
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Japanese (ja)
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JP2002526924A5 (https=
JP2002526924A (ja
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ウィニチェク・ヤロスロウ・ダブリュ．
ダッサパ・エム．・ジェイ．・フランソワ・チャンドラセカー
ハドソン・エリック・エー．
ビェプキング・マーク
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2000572928A 1998-09-30 1999-09-15 プラズマ処理システムにおいてエッチング終点を決定するための方法および装置 Expired - Fee Related JP4508423B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/164,389 US6228278B1 (en) 1998-09-30 1998-09-30 Methods and apparatus for determining an etch endpoint in a plasma processing system
US09/164,389 1998-09-30
PCT/US1999/021336 WO2000019520A1 (en) 1998-09-30 1999-09-15 Methods and apparatus for determining an etch endpoint in a plasma processing system

Publications (3)

Publication Number Publication Date
JP2002526924A JP2002526924A (ja) 2002-08-20
JP2002526924A5 JP2002526924A5 (https=) 2006-12-14
JP4508423B2 true JP4508423B2 (ja) 2010-07-21

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JP2000572928A Expired - Fee Related JP4508423B2 (ja) 1998-09-30 1999-09-15 プラズマ処理システムにおいてエッチング終点を決定するための方法および装置

Country Status (8)

Country Link
US (3) US6228278B1 (https=)
EP (1) EP1118113A1 (https=)
JP (1) JP4508423B2 (https=)
KR (1) KR100704345B1 (https=)
CN (1) CN1215546C (https=)
AU (1) AU5925999A (https=)
TW (1) TW429469B (https=)
WO (1) WO2000019520A1 (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7583492B2 (en) * 1998-09-30 2009-09-01 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6517669B2 (en) * 1999-02-26 2003-02-11 Micron Technology, Inc. Apparatus and method of detecting endpoint of a dielectric etch
US6930049B2 (en) * 2000-08-24 2005-08-16 Texas Instruments Incorporated Endpoint control for small open area by RF source parameter Vdc
US6861362B2 (en) * 2001-06-29 2005-03-01 Lam Research Corporation Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same
US6837965B2 (en) * 2002-08-14 2005-01-04 Aaron D. Gustafson Method and apparatus for etch processing with end point detection thereof
US20040173469A1 (en) * 2003-03-04 2004-09-09 Ryujiro Udo Plasma processing apparatus and method for manufacturing electrostatic chuck
US7264676B2 (en) * 2003-09-11 2007-09-04 United Microelectronics Corp. Plasma apparatus and method capable of adaptive impedance matching
WO2007014192A2 (en) 2005-07-25 2007-02-01 Smith & Nephew, Inc. Systems and methods for using polyaxial plates
US8105367B2 (en) 2003-09-29 2012-01-31 Smith & Nephew, Inc. Bone plate and bone plate assemblies including polyaxial fasteners
US7115210B2 (en) * 2004-02-02 2006-10-03 International Business Machines Corporation Measurement to determine plasma leakage
US6952014B1 (en) * 2004-04-06 2005-10-04 Qualcomm Inc End-point detection for FIB circuit modification
US7595972B2 (en) * 2004-04-09 2009-09-29 Varian Semiconductor Equipment Associates, Inc. Clamp for use in processing semiconductor workpieces
DE102004030723A1 (de) * 2004-06-25 2006-02-02 VenTec Gesellschaft für Venturekapital und Unternehmensberatung mbH Mobiler, elektrostatischer Substrathalter
CN100359660C (zh) * 2005-01-27 2008-01-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体刻蚀工艺的终点检测方法
CN100365788C (zh) * 2005-01-27 2008-01-30 北京北方微电子基地设备工艺研究中心有限责任公司 一种多晶硅栅刻蚀终点的检测装置
US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
US8382807B2 (en) 2005-07-25 2013-02-26 Smith & Nephew, Inc. Systems and methods for using polyaxial plates
US7662648B2 (en) * 2005-08-31 2010-02-16 Micron Technology, Inc. Integrated circuit inspection system
JP5094002B2 (ja) * 2005-09-06 2012-12-12 ルネサスエレクトロニクス株式会社 プラズマ処理装置およびその異常放電抑止方法
CN100344793C (zh) * 2005-11-02 2007-10-24 北京大学 一种对等离子体刻蚀进行定量监测的方法及结构
US20070122920A1 (en) * 2005-11-29 2007-05-31 Bornstein William B Method for improved control of critical dimensions of etched structures on semiconductor wafers
JP4986459B2 (ja) * 2006-01-24 2012-07-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
EP1992065B1 (de) * 2006-03-08 2011-09-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur nachbildung der symmetrischen und asymmetrischen impedanz einer asynchronmaschine
JP4802018B2 (ja) * 2006-03-09 2011-10-26 筑波精工株式会社 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置
JP5160802B2 (ja) * 2007-03-27 2013-03-13 東京エレクトロン株式会社 プラズマ処理装置
US7744691B2 (en) * 2007-04-10 2010-06-29 Calcium Silicate Corporation Energy conserving pozzolan compositions and cements incorporating same
US7864502B2 (en) * 2007-05-15 2011-01-04 International Business Machines Corporation In situ monitoring of wafer charge distribution in plasma processing
US8343305B2 (en) 2007-09-04 2013-01-01 Lam Research Corporation Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
KR100961203B1 (ko) * 2008-04-29 2010-06-09 주식회사 하이닉스반도체 스페이서 패터닝 기술을 이용한 미세 패턴 형성 방법
JP2010199429A (ja) * 2009-02-26 2010-09-09 Fujifilm Corp プラズマエッチング方法及びプラズマエッチング装置並びに液体吐出ヘッドの製造方法
US8906164B2 (en) * 2010-08-05 2014-12-09 Lam Research Corporation Methods for stabilizing contact surfaces of electrostatic chucks
RU2013158111A (ru) 2011-06-15 2015-07-20 Смит Энд Нефью, Инк. Имплантат с переменным углом фиксации
US9076831B2 (en) * 2011-11-04 2015-07-07 Lam Research Corporation Substrate clamping system and method for operating the same
CN103395741B (zh) * 2013-07-31 2016-06-01 杭州士兰微电子股份有限公司 微机电工艺监控结构和监控方法
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
US20150364550A1 (en) 2014-06-16 2015-12-17 Infineon Technologies Ag Optimized layer for semiconductor
US10993750B2 (en) 2015-09-18 2021-05-04 Smith & Nephew, Inc. Bone plate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381965A (en) 1982-01-06 1983-05-03 Drytek, Inc. Multi-planar electrode plasma etching
US4473435A (en) 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US5045149A (en) 1988-10-24 1991-09-03 Vlsi Technology, Inc. Method and apparatus for end point detection
JPH0374843A (ja) * 1989-08-16 1991-03-29 Tadahiro Omi ドライエッチング装置および方法
US5013400A (en) 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5198072A (en) * 1990-07-06 1993-03-30 Vlsi Technology, Inc. Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
JPH06124998A (ja) * 1992-10-12 1994-05-06 Tadahiro Omi プラズマ処理装置
US5308414A (en) 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
KR100290748B1 (ko) 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
JP3306677B2 (ja) * 1993-05-12 2002-07-24 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
US5557215A (en) 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5535507A (en) 1993-12-20 1996-07-16 International Business Machines Corporation Method of making electrostatic chuck with oxide insulator
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
US5812361A (en) 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5708250A (en) 1996-03-29 1998-01-13 Lam Resarch Corporation Voltage controller for electrostatic chuck of vacuum plasma processors
US5737175A (en) 1996-06-19 1998-04-07 Lam Research Corporation Bias-tracking D.C. power circuit for an electrostatic chuck
GB9620151D0 (en) * 1996-09-27 1996-11-13 Surface Tech Sys Ltd Plasma processing apparatus
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis

Also Published As

Publication number Publication date
US6562187B2 (en) 2003-05-13
AU5925999A (en) 2000-04-17
US20030183335A1 (en) 2003-10-02
KR20010075508A (ko) 2001-08-09
EP1118113A1 (en) 2001-07-25
TW429469B (en) 2001-04-11
CN1439173A (zh) 2003-08-27
US6228278B1 (en) 2001-05-08
US20010004921A1 (en) 2001-06-28
WO2000019520A1 (en) 2000-04-06
CN1215546C (zh) 2005-08-17
KR100704345B1 (ko) 2007-04-05
JP2002526924A (ja) 2002-08-20

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