JP4504233B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4504233B2
JP4504233B2 JP2005070463A JP2005070463A JP4504233B2 JP 4504233 B2 JP4504233 B2 JP 4504233B2 JP 2005070463 A JP2005070463 A JP 2005070463A JP 2005070463 A JP2005070463 A JP 2005070463A JP 4504233 B2 JP4504233 B2 JP 4504233B2
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Japan
Prior art keywords
gate
cathode
electrode
flange
semiconductor device
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JP2005070463A
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English (en)
Japanese (ja)
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JP2006253533A (ja
JP2006253533A5 (de
Inventor
和則 田口
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2005070463A priority Critical patent/JP4504233B2/ja
Priority to DE102005062444.8A priority patent/DE102005062444B4/de
Publication of JP2006253533A publication Critical patent/JP2006253533A/ja
Publication of JP2006253533A5 publication Critical patent/JP2006253533A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2005070463A 2005-03-14 2005-03-14 半導体装置およびその製造方法 Active JP4504233B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005070463A JP4504233B2 (ja) 2005-03-14 2005-03-14 半導体装置およびその製造方法
DE102005062444.8A DE102005062444B4 (de) 2005-03-14 2005-12-27 Halbleitervorrichtungen und Herstellungsverfahren für eine Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005070463A JP4504233B2 (ja) 2005-03-14 2005-03-14 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2006253533A JP2006253533A (ja) 2006-09-21
JP2006253533A5 JP2006253533A5 (de) 2008-01-17
JP4504233B2 true JP4504233B2 (ja) 2010-07-14

Family

ID=36973770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005070463A Active JP4504233B2 (ja) 2005-03-14 2005-03-14 半導体装置およびその製造方法

Country Status (2)

Country Link
JP (1) JP4504233B2 (de)
DE (1) DE102005062444B4 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7298467B2 (ja) * 2019-12-17 2023-06-27 三菱電機株式会社 半導体モジュールおよび半導体装置
CN115621233B (zh) * 2022-12-01 2023-05-16 清华大学 一种用于全控型电力电子器件的管壳

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330572A (ja) * 1995-05-31 1996-12-13 Mitsubishi Electric Corp 圧接型半導体素子及びその製造方法並びに圧接型半導体装置
JPH11261049A (ja) * 1998-03-10 1999-09-24 Mitsubishi Electric Corp 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP2000049330A (ja) * 1998-07-30 2000-02-18 Mitsubishi Electric Corp 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置
JP2001077350A (ja) * 1999-09-06 2001-03-23 Mitsubishi Electric Corp ゲート転流型半導体装置
JP2002501306A (ja) * 1998-01-09 2002-01-15 アセア ブラウン ボヴエリ アクチエンゲゼルシヤフト 低インダクタンス・ゲート制御型サイリスタ
JP2003289138A (ja) * 2002-03-28 2003-10-10 Mitsubishi Electric Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4077130B2 (ja) 2000-02-01 2008-04-16 三菱電機株式会社 ゲート転流型ターンオフサイリスタモジュール
US6445013B1 (en) 2000-04-13 2002-09-03 Mitsubishi Denki Kabushiki Kaisha Gate commutated turn-off semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330572A (ja) * 1995-05-31 1996-12-13 Mitsubishi Electric Corp 圧接型半導体素子及びその製造方法並びに圧接型半導体装置
JP2002501306A (ja) * 1998-01-09 2002-01-15 アセア ブラウン ボヴエリ アクチエンゲゼルシヤフト 低インダクタンス・ゲート制御型サイリスタ
JPH11261049A (ja) * 1998-03-10 1999-09-24 Mitsubishi Electric Corp 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP2000049330A (ja) * 1998-07-30 2000-02-18 Mitsubishi Electric Corp 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置
JP2001077350A (ja) * 1999-09-06 2001-03-23 Mitsubishi Electric Corp ゲート転流型半導体装置
JP2003289138A (ja) * 2002-03-28 2003-10-10 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
DE102005062444B4 (de) 2019-02-21
DE102005062444A1 (de) 2006-09-28
JP2006253533A (ja) 2006-09-21

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