JP4503343B2 - ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法 - Google Patents

ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法 Download PDF

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Publication number
JP4503343B2
JP4503343B2 JP2004123396A JP2004123396A JP4503343B2 JP 4503343 B2 JP4503343 B2 JP 4503343B2 JP 2004123396 A JP2004123396 A JP 2004123396A JP 2004123396 A JP2004123396 A JP 2004123396A JP 4503343 B2 JP4503343 B2 JP 4503343B2
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Japan
Prior art keywords
laser
scanning
semiconductor film
irradiation
mirror
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Expired - Fee Related
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JP2004123396A
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English (en)
Japanese (ja)
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JP2004343092A (ja
JP2004343092A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
幸一郎 田中
秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004123396A priority Critical patent/JP4503343B2/ja
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Publication of JP2004343092A5 publication Critical patent/JP2004343092A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004123396A 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法 Expired - Fee Related JP4503343B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004123396A JP4503343B2 (ja) 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003116391 2003-04-21
JP2004123396A JP4503343B2 (ja) 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2004343092A JP2004343092A (ja) 2004-12-02
JP2004343092A5 JP2004343092A5 (enrdf_load_stackoverflow) 2007-05-24
JP4503343B2 true JP4503343B2 (ja) 2010-07-14

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JP2004123396A Expired - Fee Related JP4503343B2 (ja) 2003-04-21 2004-04-19 ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法

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JP (1) JP4503343B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101617069B (zh) 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
SG195515A1 (en) * 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02181419A (ja) * 1989-01-06 1990-07-16 Hitachi Ltd レーザアニール方法
JP3390603B2 (ja) * 1995-05-31 2003-03-24 株式会社半導体エネルギー研究所 レーザー処理方法
JPH10199809A (ja) * 1997-01-09 1998-07-31 Sony Corp シリコン膜の結晶化方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4974425B2 (ja) * 2001-09-10 2012-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4035019B2 (ja) * 2002-08-23 2008-01-16 シャープ株式会社 半導体装置の製造方法
JP2004241421A (ja) * 2003-02-03 2004-08-26 Toshiba Matsushita Display Technology Co Ltd 半導体膜の結晶化方法およびその装置

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JP2004343092A (ja) 2004-12-02

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