JP4498716B2 - レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 - Google Patents

レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Download PDF

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Publication number
JP4498716B2
JP4498716B2 JP2003345276A JP2003345276A JP4498716B2 JP 4498716 B2 JP4498716 B2 JP 4498716B2 JP 2003345276 A JP2003345276 A JP 2003345276A JP 2003345276 A JP2003345276 A JP 2003345276A JP 4498716 B2 JP4498716 B2 JP 4498716B2
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laser
laser beam
lens
substrate
film
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JP2004146823A5 (enExample
JP2004146823A (ja
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幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2003345276A 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Expired - Fee Related JP4498716B2 (ja)

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JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

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JP2002291545 2002-10-03
JP2003345276A JP4498716B2 (ja) 2002-10-03 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

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JP2004146823A JP2004146823A (ja) 2004-05-20
JP2004146823A5 JP2004146823A5 (enExample) 2006-11-16
JP4498716B2 true JP4498716B2 (ja) 2010-07-07

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1637546B1 (en) 2003-06-26 2010-01-06 Sekisui Chemical Co., Ltd. Binder resin for coating paste
CN101331592B (zh) 2005-12-16 2010-06-16 株式会社半导体能源研究所 激光照射设备、激光照射方法和半导体装置的制造方法
JP5500573B2 (ja) * 2009-05-19 2014-05-21 株式会社日本製鋼所 半導体不純物の活性化方法
CN102290342B (zh) * 2011-09-05 2013-07-03 清华大学 一种采用六边形束斑的激光扫描退火方法
SG195515A1 (en) * 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US9656346B2 (en) 2012-07-04 2017-05-23 Saint-Gobain Glass France Device and method for laser processing of large-area substrates using at least two bridges
JP6665624B2 (ja) * 2015-03-27 2020-03-13 日本製鉄株式会社 試験装置およびそれを備えた電子顕微鏡
CN111863342B (zh) * 2019-04-28 2021-08-27 上海微电子装备（集团）股份有限公司 一种ito退火工艺
CN115803852A (zh) 2020-06-18 2023-03-14 住友重机械工业株式会社 激光退火装置的控制装置及激光退火方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795538B2 (ja) * 1986-05-02 1995-10-11 旭硝子株式会社 レ−ザ−アニ−ル装置
JP2001326363A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

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