JP4498685B2 - 半導体記憶素子の作製方法 - Google Patents

半導体記憶素子の作製方法 Download PDF

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Publication number
JP4498685B2
JP4498685B2 JP2003079583A JP2003079583A JP4498685B2 JP 4498685 B2 JP4498685 B2 JP 4498685B2 JP 2003079583 A JP2003079583 A JP 2003079583A JP 2003079583 A JP2003079583 A JP 2003079583A JP 4498685 B2 JP4498685 B2 JP 4498685B2
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Japan
Prior art keywords
film
semiconductor film
insulating film
semiconductor memory
semiconductor
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Expired - Fee Related
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JP2003079583A
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Japanese (ja)
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JP2004006734A (ja
JP2004006734A5 (enExample
Inventor
清 加藤
敦生 磯部
秀和 宮入
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003079583A priority Critical patent/JP4498685B2/ja
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Publication of JP2004006734A5 publication Critical patent/JP2004006734A5/ja
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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003079583A 2002-03-22 2003-03-24 半導体記憶素子の作製方法 Expired - Fee Related JP4498685B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003079583A JP4498685B2 (ja) 2002-03-22 2003-03-24 半導体記憶素子の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002080462 2002-03-22
JP2003079583A JP4498685B2 (ja) 2002-03-22 2003-03-24 半導体記憶素子の作製方法

Related Parent Applications (1)

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JP2003078348A Division JP3949599B2 (ja) 2002-03-22 2003-03-20 半導体記憶装置

Publications (3)

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JP2004006734A JP2004006734A (ja) 2004-01-08
JP2004006734A5 JP2004006734A5 (enExample) 2006-05-11
JP4498685B2 true JP4498685B2 (ja) 2010-07-07

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JP2003079583A Expired - Fee Related JP4498685B2 (ja) 2002-03-22 2003-03-24 半導体記憶素子の作製方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439594B2 (en) * 2006-03-16 2008-10-21 Micron Technology, Inc. Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors
CN119384210B (zh) * 2024-12-30 2025-03-28 甬江实验室 半导体结构及其制备方法、电子设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131659A (ja) * 1997-07-10 1999-02-02 Toshiba Corp 半導体装置の製造方法
JP4112686B2 (ja) * 1997-08-20 2008-07-02 株式会社半導体エネルギー研究所 半導体装置
JP4954359B2 (ja) * 1999-02-12 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001015591A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置の製造方法・半導体装置
JP4666783B2 (ja) * 2000-02-01 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4823408B2 (ja) * 2000-06-08 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2002057309A (ja) * 2000-08-08 2002-02-22 Sony Corp Ｓｏｉ基板の作製方法
JP2001168347A (ja) * 2000-10-02 2001-06-22 Semiconductor Energy Lab Co Ltd 半導体集積回路

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JP2004006734A (ja) 2004-01-08

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