JP4484577B2 - 半導体記憶装置及びその制御方法 - Google Patents

半導体記憶装置及びその制御方法 Download PDF

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Publication number
JP4484577B2
JP4484577B2 JP2004138417A JP2004138417A JP4484577B2 JP 4484577 B2 JP4484577 B2 JP 4484577B2 JP 2004138417 A JP2004138417 A JP 2004138417A JP 2004138417 A JP2004138417 A JP 2004138417A JP 4484577 B2 JP4484577 B2 JP 4484577B2
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JP
Japan
Prior art keywords
bit line
transistor
memory transistor
memory
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004138417A
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English (en)
Japanese (ja)
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JP2005322296A (ja
JP2005322296A5 (OSRAM
Inventor
かよ子 尾本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004138417A priority Critical patent/JP4484577B2/ja
Priority to US11/104,602 priority patent/US7154787B2/en
Publication of JP2005322296A publication Critical patent/JP2005322296A/ja
Publication of JP2005322296A5 publication Critical patent/JP2005322296A5/ja
Application granted granted Critical
Publication of JP4484577B2 publication Critical patent/JP4484577B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure

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  • Read Only Memory (AREA)
JP2004138417A 2004-05-07 2004-05-07 半導体記憶装置及びその制御方法 Expired - Fee Related JP4484577B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004138417A JP4484577B2 (ja) 2004-05-07 2004-05-07 半導体記憶装置及びその制御方法
US11/104,602 US7154787B2 (en) 2004-05-07 2005-04-13 Semiconductor memory and control method thereof allowing high degree of accuracy in verify operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004138417A JP4484577B2 (ja) 2004-05-07 2004-05-07 半導体記憶装置及びその制御方法

Publications (3)

Publication Number Publication Date
JP2005322296A JP2005322296A (ja) 2005-11-17
JP2005322296A5 JP2005322296A5 (OSRAM) 2007-06-14
JP4484577B2 true JP4484577B2 (ja) 2010-06-16

Family

ID=35239266

Family Applications (1)

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JP2004138417A Expired - Fee Related JP4484577B2 (ja) 2004-05-07 2004-05-07 半導体記憶装置及びその制御方法

Country Status (2)

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US (1) US7154787B2 (OSRAM)
JP (1) JP4484577B2 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008047189A (ja) * 2006-08-11 2008-02-28 Matsushita Electric Ind Co Ltd 半導体記憶装置
KR100826653B1 (ko) * 2007-04-06 2008-05-06 주식회사 하이닉스반도체 낸드 플래시 메모리소자의 소거검증 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2634089B2 (ja) 1990-10-22 1997-07-23 三菱電機株式会社 不揮発性半導体記憶装置
JPH0628875A (ja) * 1992-07-10 1994-02-04 Sony Corp フラッシュ型ｅ２ ｐｒｏｍの消去方法
JPH06290591A (ja) * 1993-03-31 1994-10-18 Sony Corp 半導体不揮発性記憶装置
KR100248868B1 (ko) * 1996-12-14 2000-03-15 윤종용 플래시 불휘발성 반도체 메모리 장치 및 그 장치의 동작 모드 제어 방법
JP3990485B2 (ja) 1997-12-26 2007-10-10 株式会社ルネサステクノロジ 半導体不揮発性記憶装置
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
JP4434405B2 (ja) * 2000-01-27 2010-03-17 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP4084922B2 (ja) * 2000-12-22 2008-04-30 株式会社ルネサステクノロジ 不揮発性記憶装置の書込み方法
JP2003077282A (ja) * 2001-08-31 2003-03-14 Fujitsu Ltd 不揮発性半導体記憶装置
US6989562B2 (en) * 2003-04-04 2006-01-24 Catalyst Semiconductor, Inc. Non-volatile memory integrated circuit
JP4494820B2 (ja) * 2004-02-16 2010-06-30 パナソニック株式会社 不揮発性半導体記憶装置

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Publication number Publication date
US20050248985A1 (en) 2005-11-10
JP2005322296A (ja) 2005-11-17
US7154787B2 (en) 2006-12-26

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