JP4477435B2 - 偏向器作製方法、荷電粒子線露光装置及びデバイス製造方法 - Google Patents

偏向器作製方法、荷電粒子線露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4477435B2
JP4477435B2 JP2004192094A JP2004192094A JP4477435B2 JP 4477435 B2 JP4477435 B2 JP 4477435B2 JP 2004192094 A JP2004192094 A JP 2004192094A JP 2004192094 A JP2004192094 A JP 2004192094A JP 4477435 B2 JP4477435 B2 JP 4477435B2
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Japan
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substrate
opening
deflector
charged particle
electrode
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Expired - Fee Related
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JP2004192094A
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Japanese (ja)
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JP2006013390A (ja
JP2006013390A5 (https=
Inventor
太 廣瀬
治人 小野
義夫 須崎
研爾 玉森
泰史 小山
昌敏 金丸
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Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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Publication of JP2006013390A5 publication Critical patent/JP2006013390A5/ja
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  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
JP2004192094A 2004-06-29 2004-06-29 偏向器作製方法、荷電粒子線露光装置及びデバイス製造方法 Expired - Fee Related JP4477435B2 (ja)

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JP2004192094A JP4477435B2 (ja) 2004-06-29 2004-06-29 偏向器作製方法、荷電粒子線露光装置及びデバイス製造方法

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JP2004192094A JP4477435B2 (ja) 2004-06-29 2004-06-29 偏向器作製方法、荷電粒子線露光装置及びデバイス製造方法

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JP2006013390A JP2006013390A (ja) 2006-01-12
JP2006013390A5 JP2006013390A5 (https=) 2007-08-09
JP4477435B2 true JP4477435B2 (ja) 2010-06-09

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JP2004192094A Expired - Fee Related JP4477435B2 (ja) 2004-06-29 2004-06-29 偏向器作製方法、荷電粒子線露光装置及びデバイス製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5536322B2 (ja) * 2007-10-09 2014-07-02 新光電気工業株式会社 基板の製造方法
JP7016309B2 (ja) * 2018-09-19 2022-02-04 東芝デバイス＆ストレージ株式会社 半導体装置
JP7492929B2 (ja) * 2021-02-19 2024-05-30 株式会社東芝 半導体装置、荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム照射装置
CN117957630A (zh) * 2021-09-24 2024-04-30 华为技术有限公司 带电粒子束系统、粒子束偏转器及其制作方法

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