JP4477273B2 - 集積変調器を有する同調可能なレーザダイオードアセンブリ - Google Patents

集積変調器を有する同調可能なレーザダイオードアセンブリ Download PDF

Info

Publication number
JP4477273B2
JP4477273B2 JP2001527409A JP2001527409A JP4477273B2 JP 4477273 B2 JP4477273 B2 JP 4477273B2 JP 2001527409 A JP2001527409 A JP 2001527409A JP 2001527409 A JP2001527409 A JP 2001527409A JP 4477273 B2 JP4477273 B2 JP 4477273B2
Authority
JP
Japan
Prior art keywords
assembly
modulator
optical
tunable laser
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001527409A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003513297A5 (https=
JP2003513297A (ja
Inventor
グレゴリー フィッシュ
ラリー コールドレン
Original Assignee
ジェイディーエス ユニフェイズ コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/614,195 external-priority patent/US6574259B1/en
Priority claimed from US09/614,224 external-priority patent/US6654400B1/en
Priority claimed from US09/614,674 external-priority patent/US6624000B1/en
Priority claimed from US09/614,375 external-priority patent/US6658035B1/en
Priority claimed from US09/614,377 external-priority patent/US6580739B1/en
Priority claimed from US09/614,378 external-priority patent/US6628690B1/en
Priority claimed from US09/614,376 external-priority patent/US6614819B1/en
Application filed by ジェイディーエス ユニフェイズ コーポレイション filed Critical ジェイディーエス ユニフェイズ コーポレイション
Publication of JP2003513297A publication Critical patent/JP2003513297A/ja
Publication of JP2003513297A5 publication Critical patent/JP2003513297A5/ja
Publication of JP4477273B2 publication Critical patent/JP4477273B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C40—COMBINATORIAL TECHNOLOGY
    • C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
    • C40B30/00—Methods of screening libraries
    • C40B30/04—Methods of screening libraries by measuring the ability to specifically bind a target molecule, e.g. antibody-antigen binding, receptor-ligand binding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/68—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids
    • G01N33/6803—General methods of protein analysis not limited to specific proteins or families of proteins
    • G01N33/6845—Methods of identifying protein-protein interactions in protein mixtures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2500/00—Screening for compounds of potential therapeutic value
    • G01N2500/10—Screening for compounds of potential therapeutic value involving cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06253—Pulse modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier

Landscapes

  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Molecular Biology (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Electromagnetism (AREA)
  • Biochemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Medicinal Chemistry (AREA)
  • Hematology (AREA)
  • Urology & Nephrology (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Nanotechnology (AREA)
  • Nonlinear Science (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Pathology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biotechnology (AREA)
  • Cell Biology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microbiology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Food Science & Technology (AREA)
  • Analytical Chemistry (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2001527409A 1999-09-02 2000-08-18 集積変調器を有する同調可能なレーザダイオードアセンブリ Expired - Lifetime JP4477273B2 (ja)

Applications Claiming Priority (25)

Application Number Priority Date Filing Date Title
US15207299P 1999-09-02 1999-09-02
US15203899P 1999-09-02 1999-09-02
US15204999P 1999-09-02 1999-09-02
US60/152,038 1999-09-02
US60/152,072 1999-09-02
US60/152,049 1999-09-02
US61486500A 2000-07-12 2000-07-12
US09/614,195 2000-07-12
US09/614,375 US6658035B1 (en) 1999-09-02 2000-07-12 Tunable laser source with integrated optical amplifier
US09/614,674 2000-07-12
US09/614,674 US6624000B1 (en) 1999-09-02 2000-07-12 Method for making a monolithic wavelength converter assembly
US09/614,895 US6349106B1 (en) 1999-09-02 2000-07-12 Method for converting an optical wavelength using a monolithic wavelength converter assembly
US09/614,224 2000-07-12
US09/614,377 2000-07-12
US09/614,865 2000-07-12
US09/614,376 2000-07-12
US09/614,378 2000-07-12
US09/614,378 US6628690B1 (en) 1999-09-02 2000-07-12 Opto-electronic laser with integrated modulator
US09/614,377 US6580739B1 (en) 1999-09-02 2000-07-12 Integrated opto-electronic wavelength converter assembly
US09/614,195 US6574259B1 (en) 1999-09-02 2000-07-12 Method of making an opto-electronic laser with integrated modulator
US09/614,375 2000-07-12
US09/614,224 US6654400B1 (en) 1999-09-02 2000-07-12 Method of making a tunable laser source with integrated optical amplifier
US09/614,376 US6614819B1 (en) 1999-09-02 2000-07-12 Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US09/614,895 2000-07-12
PCT/US2000/022771 WO2001024328A2 (en) 1999-09-02 2000-08-18 Method of converting an optical wavelength with an opto-electronic laser with integrated modulator

Publications (3)

Publication Number Publication Date
JP2003513297A JP2003513297A (ja) 2003-04-08
JP2003513297A5 JP2003513297A5 (https=) 2007-10-11
JP4477273B2 true JP4477273B2 (ja) 2010-06-09

Family

ID=27583770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001527409A Expired - Lifetime JP4477273B2 (ja) 1999-09-02 2000-08-18 集積変調器を有する同調可能なレーザダイオードアセンブリ

Country Status (8)

Country Link
US (1) US6349106B1 (https=)
EP (3) EP1210755B1 (https=)
JP (1) JP4477273B2 (https=)
AT (3) ATE319206T1 (https=)
AU (2) AU2246301A (https=)
CA (3) CA2384049A1 (https=)
DE (2) DE60026367T8 (https=)
WO (2) WO2001024328A2 (https=)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US20030219917A1 (en) 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7257143B2 (en) 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7435660B2 (en) 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US6658035B1 (en) * 1999-09-02 2003-12-02 Agility Communications, Inc. Tunable laser source with integrated optical amplifier
US6614819B1 (en) * 1999-09-02 2003-09-02 Agility Communications, Inc. Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US6654400B1 (en) * 1999-09-02 2003-11-25 Agility Communications, Inc. Method of making a tunable laser source with integrated optical amplifier
US6628690B1 (en) * 1999-09-02 2003-09-30 Agility Communications, Inc. Opto-electronic laser with integrated modulator
JP2001272703A (ja) * 2000-03-24 2001-10-05 Fujitsu Ltd 波長変換装置及び波長変換方法
US6690693B1 (en) * 2000-05-04 2004-02-10 Agility Communications, Inc. Power and wavelength control of sampled grating distributed Bragg reflector lasers
US6590924B2 (en) * 2000-05-04 2003-07-08 Agility Communications, Inc. Mirror and cavity designs for sampled grating distributed bragg reflector lasers
US7061943B2 (en) * 2000-06-29 2006-06-13 Agility Communications, Inc. Controller calibration for small form factor sampled grating distributed Bragg reflector laser
WO2002027303A2 (en) * 2000-09-25 2002-04-04 Massachusetts Institute Of Technology Optical micro-cavity sensors
FR2821495B1 (fr) * 2001-02-23 2004-08-27 Cit Alcatel Laser accordable de facon rapide et large
US6950233B1 (en) * 2001-03-09 2005-09-27 Finisar Corporation System and method for wavelength conversion using a VLSOA
GB2377814A (en) * 2001-03-19 2003-01-22 Marconi Applied Techn Ltd Optical amplifier with tunable pump laser
US6954476B2 (en) * 2001-05-15 2005-10-11 Agility Communications, Inc. Sampled grating distributed Bragg reflector laser controller
US6853479B1 (en) * 2001-08-30 2005-02-08 Oewaves, Inc. Apparatus and method for coupling light between an optical resonator and a semiconductor chip with a minimum number of components and alignment steps
US7653093B2 (en) * 2001-09-10 2010-01-26 Imec Widely tunable twin guide laser structure
US6665457B2 (en) * 2001-09-10 2003-12-16 Altitun Ab Tunable electro-absorption modulator and tunable laser
US7116851B2 (en) 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
US7672546B2 (en) 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
CA2463278C (en) 2001-10-09 2013-04-02 Infinera Corporation Transmitter photonic integrated circuits (txpic) and optical transport networks employing txpics
GB0124217D0 (en) * 2001-10-09 2001-11-28 Denselight Semiconductors Pte Two-section distributed bragg reflector laser
DE60208416T2 (de) 2001-10-09 2006-06-22 Infinera Corp., Sunnyvale Digitale optische netzwerkarchitektur
US6819466B2 (en) * 2001-12-26 2004-11-16 Coretek Inc. Asymmetric fabry-perot modulator with a micromechanical phase compensating cavity
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6873763B2 (en) * 2002-04-12 2005-03-29 Intel Corporation Managing channels with different wavelengths in optical networks
US7035305B2 (en) 2002-05-10 2006-04-25 Bookham Technology, Plc Monolithically integrated high power laser optical device
EP1387451A1 (en) * 2002-07-31 2004-02-04 Corning Incorporated Optical communication devices and their operation
JP3815453B2 (ja) * 2003-03-27 2006-08-30 Ｋｄｄｉ株式会社 光信号処理装置及び方法
US7043097B2 (en) * 2003-07-25 2006-05-09 Agility Communications, Inc. Traveling-wave optoelectronic wavelength converter
US7633988B2 (en) * 2003-07-31 2009-12-15 Jds Uniphase Corporation Tunable laser source with monolithically integrated interferometric optical modulator
US7373031B2 (en) * 2004-09-30 2008-05-13 Intel Corporation Apparatus for an electro-optical device connection
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
JP4857777B2 (ja) * 2006-01-18 2012-01-18 富士通株式会社 光半導体素子及びその製造方法
JP2009094410A (ja) * 2007-10-11 2009-04-30 Nippon Telegr & Teleph Corp <Ntt> 半導体光集積素子及びその作製方法
JP5109931B2 (ja) * 2008-10-31 2012-12-26 日本電気株式会社 半導体光集積素子および半導体光集積素子の製造方法
DE102008056096B4 (de) * 2008-11-04 2016-09-29 Forschungsverbund Berlin E.V. Verfahren zur selektiven Transmission eines optischen Signals
DE102012209485B4 (de) 2012-06-05 2015-10-22 Forschungsverbund Berlin E.V. Vorrichtung und Verfahren zur Selektion von optischen Pulsen
JP6064530B2 (ja) * 2012-11-08 2017-01-25 住友電気工業株式会社 発光モジュール及び光トランシーバ
US9362428B2 (en) 2012-11-27 2016-06-07 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10916669B2 (en) * 2012-12-10 2021-02-09 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10388806B2 (en) 2012-12-10 2019-08-20 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10928659B2 (en) 2014-02-24 2021-02-23 Rockley Photonics Limited Optoelectronic device
GB2523383B (en) * 2014-02-24 2016-09-14 Rockley Photonics Ltd Detector remodulator
US10222677B2 (en) 2014-02-24 2019-03-05 Rockley Photonics Limited Optoelectronic device
CN107367790B (zh) * 2014-02-24 2019-12-06 洛克利光子有限公司 检测器重调器和光电子交换机
GB2564158B (en) 2017-07-05 2019-12-18 Rockley Photonics Ltd Optoelectronic device
US10678115B2 (en) 2015-03-05 2020-06-09 Rockley Photonics Limited Waveguide modulator structures
US10921616B2 (en) 2016-11-23 2021-02-16 Rockley Photonics Limited Optoelectronic device
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
US10216059B2 (en) 2015-03-05 2019-02-26 Rockley Photonics Limited Waveguide modulator structures
US10191350B2 (en) 2015-03-05 2019-01-29 Rockley Photonics Limited Waveguide modulators structures
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
JP2018060974A (ja) * 2016-10-07 2018-04-12 日本電信電話株式会社 半導体光集積素子
US11101256B2 (en) 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators
GB2559458B (en) 2016-12-02 2020-06-03 Rockley Photonics Ltd Waveguide device and method of doping a waveguide device
US11105975B2 (en) 2016-12-02 2021-08-31 Rockley Photonics Limited Waveguide optoelectronic device
JP7397376B2 (ja) * 2020-07-02 2023-12-13 日本電信電話株式会社 光送信器
CN112882311B (zh) * 2021-03-29 2024-09-10 国网江苏省电力有限公司无锡供电分公司 一种基于soa的全光波长转换控制器及控制方法
CN222014439U (zh) * 2021-04-20 2024-11-15 卢米诺技术公司 具有两侧检测器的相干脉冲激光雷达系统
WO2025098612A1 (en) * 2023-11-09 2025-05-15 Huawei Technologies Co., Ltd. An integrated optical device
JP7648836B1 (ja) 2024-06-26 2025-03-18 三菱電機株式会社 光変調器集積半導体レーザ、光変調器集積半導体レーザの駆動方法、光モジュール、多値強度変調送受信装置、及び光回線終端装置
JP7802250B1 (ja) * 2025-03-13 2026-01-19 三菱電機株式会社 光変調器集積半導体レーザ及び光モジュール

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5088105A (en) 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination
US5625636A (en) 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
EP0620475B1 (en) 1993-03-15 1998-12-30 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
US5715268A (en) 1994-01-24 1998-02-03 Sdl, Inc. Laser amplifiers with suppressed self oscillation
FR2715770B1 (fr) 1994-01-31 1996-07-12 France Telecom Procédé pour la réalisation d'un composant électro-optique et/ou photonique.
US5479539A (en) 1994-06-15 1995-12-26 Texas Instruments Incorporated Integrated optical transmitter and receiver
US5742045A (en) 1994-10-26 1998-04-21 The United States Of America As Represented By The Secretary Of The Air Force Apparatus using diode laser logic to form a configurable optical gate system
US5535231A (en) 1994-11-08 1996-07-09 Samsung Electronics Co., Ltd. Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector
US7377944B2 (en) 2002-07-08 2008-05-27 Ossur Hf Socket liner incorporating sensors to monitor amputee progress

Also Published As

Publication number Publication date
WO2001024328A9 (en) 2002-09-19
DE60026071T2 (de) 2006-08-31
DE60026367D1 (de) 2006-04-27
DE60026367T2 (de) 2006-11-02
DE60026071D1 (de) 2006-04-20
EP1210753B1 (en) 2006-02-15
EP1210755A2 (en) 2002-06-05
WO2001016642A3 (en) 2001-10-25
WO2001016642A9 (en) 2002-09-06
US6349106B1 (en) 2002-02-19
AU2246301A (en) 2001-03-26
DE60026071T8 (de) 2007-06-14
CA2384049A1 (en) 2001-03-08
ATE319206T1 (de) 2006-03-15
EP1210755B1 (en) 2006-03-01
DE60026367T8 (de) 2007-06-21
AU2246401A (en) 2001-03-26
WO2001024328A2 (en) 2001-04-05
WO2001016642A2 (en) 2001-03-08
EP1210754A2 (en) 2002-06-05
EP1210754B1 (en) 2005-11-02
CA2391974A1 (en) 2001-04-05
CA2384033A1 (en) 2001-03-08
EP1210753A2 (en) 2002-06-05
ATE308810T1 (de) 2005-11-15
WO2001024328A3 (en) 2001-10-25
ATE318015T1 (de) 2006-03-15
JP2003513297A (ja) 2003-04-08

Similar Documents

Publication Publication Date Title
JP4477273B2 (ja) 集積変調器を有する同調可能なレーザダイオードアセンブリ
US6574259B1 (en) Method of making an opto-electronic laser with integrated modulator
US6628690B1 (en) Opto-electronic laser with integrated modulator
US6614819B1 (en) Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US7622315B2 (en) Tunable laser source with integrated optical modulator
US6700910B1 (en) Wavelength tunable laser and optical device
US6665105B2 (en) Tunable electro-absorption modulator
EP0735635B1 (en) Optical semiconductor apparatus, driving method therefor, light source apparatus and optical communication system using the same
US20020131466A1 (en) Electroabsorption modulated laser
JP2003513297A5 (https=)
US20010008539A1 (en) Method of manufacturing a semiconductor optical waveguide array and an array-structured semiconductor optical device
AU775671B2 (en) Integrated wavelength tunable single and two-stage all-optical wavelength converter
US7065300B1 (en) Optical transmitter including a linear semiconductor optical amplifier
US20230035055A1 (en) Electroabsorption Modulated Laser
Delprat et al. 20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications
Tanbun-Ek et al. Broad-band tunable electroabsorption modulated laser for WDM application
JP2965011B2 (ja) 半導体光素子及びその製造方法
US7310363B1 (en) Integrated wavelength tunable single and two-stage all-optical wavelength converter
JP3466826B2 (ja) 利得優位な偏波モードの異なる複数種の活性層を持つ半導体光デバイス
Yashiki et al. Wavelength-independent operation of EA-modulator integrated wavelengthselectable microarray light sources
Raring et al. Low dispersion penalty at 10 Gb/s, Over 75 km, using a quantum-well-intermixed electroabsorption-modulator/widely-tunable laser transmitter
Ramdane et al. Multiple quantum well distributed feedback laser-electroabsorption modulator light source with 36 GHz bandwidth
Ougier et al. 80 addressable wavelength channels over 33 nm with a sampled-grating DBR laser for 2.5 Gb/s WDM applications
Ramdane et al. Tunable distributed Bragg reflector laser-electroabsorption modulator based on identical active layer monolithic integration approach
Tanbun-Ek et al. DFB lasers integrated with Mach-Zehnder optical modulator and a power booster fabricated by selective area growth MOVPE technique

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070820

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070820

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20080918

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100204

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100301

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100311

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130319

Year of fee payment: 3