JP4467628B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims description 137
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 86
- 229910052710 silicon Inorganic materials 0.000 claims description 86
- 239000010703 silicon Substances 0.000 claims description 86
- 239000011521 glass Substances 0.000 claims description 35
- 239000001257 hydrogen Substances 0.000 claims description 33
- 229910052739 hydrogen Inorganic materials 0.000 claims description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 238000002955 isolation Methods 0.000 claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 238000005498 polishing Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 229910002367 SrTiO Inorganic materials 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 484
- 239000010410 layer Substances 0.000 description 173
- 239000011229 interlayer Substances 0.000 description 38
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000001994 activation Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- -1 mechanical polishing Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L21/8232—Field-effect technology
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- H01L21/8232—Field-effect technology
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- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
Description
Michel Bruel ,"Smart-Cut:A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding",Jpn.J.Appl.Phys.,Vol.36(1997),pp.1636-1641
次に、本発明の作用について説明する。
R1 第1領域
R2 第2領域
1 基体層、シリコン基板、シリコン層
5 LOCOS酸化膜(素子分離用絶縁膜)
8a ゲート電極
13 第1平坦化膜
14 第2平坦化膜
16 剥離層
17 層間絶縁膜
20 絶縁膜
21 ガラス基板
35 平坦化膜
36 溝部
40 活性領域
41 素子分離領域
42 チャネル領域
50 NMOSトランジスタ
51 第1絶縁膜
52 第2絶縁膜
53 第3絶縁膜
図1〜図12は、本発明に係る半導体装置及びその製造方法の実施形態1を示す断面図である。
次に、本発明に係る半導体装置Sの製造方法について説明する。
第1領域R1にはゲート電極8a等がゲート酸化膜7の表面から突出して形成されているため、第1領域R1は全体として起伏が大きくなっている。一方、第2領域R2のゲート配線層8b等がLOCOS酸化膜5の表面から突出して形成されているため、第2領域R2は、LOCOS酸化膜5の表面が平坦であるにも拘わらず、全体として起伏が大きくなっている。したがって、仮に、第1領域R1及び第2領域R2の全体に絶縁膜を堆積してCMPにより一度に平坦化しようとすると、比較的厚い絶縁膜を第1領域R1及び第2領域R2の全体に堆積させて、その表面の起伏をなるべく小さくする必要がある。ところが、起伏を有する絶縁膜をCMPによって高精度に平坦化するには限界がある。さらに、絶縁膜を比較的厚く堆積すると、シリコン基板1上の異なる各領域において、その堆積した絶縁膜の平均的な厚みに差が生じ易くなる結果、CMP後の平坦化膜の厚みにばらつきが生じることが避けられない。
図13は、本発明の半導体装置Sの実施形態2を示す断面図である。尚、以降の各実施形態では、図1〜図12と同じ部分については同じ符号を付して、その詳細な説明を省略する。
図14〜図18は、本発明の半導体装置Sの実施形態2を示す断面図である。本実施形態では、第1平坦化膜13及び第2平坦化膜14が、それぞれ互いに異なる2つの絶縁膜によって構成されている点で、上記実施形態1と異なっている。
本実施形態の半導体装置Sの製造方法では、上記実施形態1における第1平坦化膜形成工程及び第2平坦化膜形成工程の一部(すなわち、後述の第3絶縁膜53を形成する工程)を同時に行う。
したがって、本実施形態によっても、上記実施形態1と同様の効果を得ることができる。そのことに加え、第1平坦化膜13及び第2平坦化膜14が、LOCOS酸化膜5と同じ材質のシリコン酸化膜を含むようにしたので、水素をシリコン基板1にイオン注入する際に、その水素の注入深さを容易に制御することができる。すなわち、平面状の剥離層16を容易且つ精度良く形成することが可能となる。
図19は、本発明の半導体装置Sの実施形態4を示す断面図である。本実施形態の半導体装置Sは、上記実施形態3と略同様の構成を有する半導体デバイス部31が、ガラス基板21に予め形成された電気素子25に接続されている。
上記各実施形態では、LOCOS酸化膜5の表面がゲート酸化膜7と同じ平面を有するようにして、活性領域40と素子分離領域との高さを揃える目的で、シリコン基板1に予め溝部36を形成したが、本発明はこれに限らず、LOCOS酸化膜5を形成した後にシリコン窒化膜3を除去し、LOCOS酸化膜5をCMP研磨するようにしてもよく、STI(Shallow Trench Isolation)等の方法により素子分離領域を形成してもよい。また、このような溝部36を形成せずに、活性領域40と素子分離領域との高さを揃えないようにしてもよい。
Claims (13)
- 基体層に活性領域が形成される複数の第1領域と、該各第1領域同士の間にそれぞれ設けられて素子分離領域が形成される第2領域とを有する半導体装置を製造する方法であって、
前記第1領域にゲート電極を形成するゲート電極形成工程と、
平坦な表面を有する第1平坦化膜を、前記各第2領域の少なくとも一部の平坦な領域に同じ厚みで形成する第1平坦化膜形成工程と、
前記第1平坦化膜の表面に連続する平坦な表面を有する第2平坦化膜を、前記第1平坦化膜同士の間に形成する第2平坦化膜形成工程と、
前記第1平坦化膜又は前記第2平坦化膜を介して前記基体層に剥離用物質をイオン注入して剥離層を形成する剥離層形成工程と、
前記剥離層に沿って前記基体層の一部を分離する分離工程とを備え、
前記第1平坦化膜形成工程では、前記第1平坦化膜を前記ゲート電極の表面の高さ以上に形成する
ことを特徴とする半導体装置の製造方法。 - 請求項1において、
前記第2平坦化膜形成工程では、少なくとも前記第1平坦化膜同士の間に、第1絶縁膜を前記第1平坦化膜の表面の高さ以上に形成し、前記第1平坦化膜をストッパーとして前記第1絶縁膜の一部を研磨除去することにより、前記第1絶縁膜の表面を前記第1平坦化膜の表面に連続するように平坦化する
ことを特徴とする半導体装置の製造方法。 - 請求項2において、
前記第1平坦化膜形成工程では、前記第1領域及び第2領域に第2絶縁膜を形成した後に、前記第2絶縁膜を少なくとも前記第1領域から除去することによって、前記第2領域の少なくとも一部に前記第2絶縁膜を残し、前記第1平坦化膜を前記第2領域に残された第2絶縁膜を含むように形成する
ことを特徴とする半導体装置の製造方法。 - 請求項3において、
前記第1平坦化膜形成工程では、前記第2絶縁膜を前記第1平坦化膜として形成する
ことを特徴とする半導体装置の製造方法。 - 請求項4において、
前記第2絶縁膜はシリコン窒化膜であり、
前記第1絶縁膜はシリコン酸化膜である
ことを特徴とする半導体装置の製造方法。 - 請求項3において、
前記素子分離領域には、素子分離用絶縁膜が形成され、
前記第2絶縁膜は、前記素子分離用絶縁膜と同じ材質により形成され、
前記第1平坦化膜形成工程では、前記第2絶縁膜と異なる材質の第3絶縁膜を、前記第2領域に残された第2絶縁膜に積層し、前記第2絶縁膜及び前記第3絶縁膜を前記第1平坦化膜として形成する
ことを特徴とする半導体装置の製造方法。 - 請求項6において、
前記第1絶縁膜及び第2絶縁膜はシリコン酸化膜であり、
前記第3絶縁膜はシリコン窒化膜である
ことを特徴とする半導体装置の製造方法。 - 請求項1において、
前記第1平坦化膜及び第2平坦化膜に絶縁膜を介して基板を貼り付ける貼付工程を備え、
前記貼付工程は、前記分離工程の前に行われる
ことを特徴とする半導体装置の製造方法。 - 請求項8において、
前記基板は、ガラス基板又はシリコン基板である
ことを特徴とする半導体装置の製造方法。 - 請求項1において、
前記基体層は、シリコン層、シリコンカーバイド層、シリコンゲルマニウム層、ゲルマニウム層、ガリウムナイトライド層、ガリウム砒素層、インジウムリン層、LiNbO3層、LaAlO3層、及びSrTiO3層の何れか1つである
ことを特徴とする半導体装置の製造方法。 - 請求項1において、
前記剥離用物質は、水素及び不活性元素の少なくとも一方である
ことを特徴とする半導体装置の製造方法。 - 請求項2において、
前記第2平坦化膜形成工程では、前記第1絶縁膜をCMP(Chemical Mechanical Polishing)により平坦化する
ことを特徴とする半導体装置の製造方法。 - 請求項1において、
前記第1領域には、MOSトランジスタが形成されている
ことを特徴とする半導体装置の製造方法。
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US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
CN101878534B (zh) * | 2008-01-21 | 2012-07-04 | 夏普株式会社 | 半导体装置和显示装置 |
WO2009101662A1 (ja) * | 2008-02-13 | 2009-08-20 | Sharp Kabushiki Kaisha | 半導体装置の製造方法、半導体装置及び表示装置 |
US8212327B2 (en) * | 2008-03-06 | 2012-07-03 | Sionyx, Inc. | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
JP5292878B2 (ja) * | 2008-03-26 | 2013-09-18 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5321022B2 (ja) * | 2008-12-04 | 2013-10-23 | ソニー株式会社 | 半導体装置の製造方法および半導体装置 |
JP5562696B2 (ja) * | 2009-03-27 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US20120146172A1 (en) | 2010-06-18 | 2012-06-14 | Sionyx, Inc. | High Speed Photosensitive Devices and Associated Methods |
KR101798379B1 (ko) * | 2010-10-05 | 2017-11-16 | 삼성전자주식회사 | 게이트 라스트 공정에서의 게이트 형성방법 및 그 방법에 의해 형성된 게이트 영역 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US20130016203A1 (en) | 2011-07-13 | 2013-01-17 | Saylor Stephen D | Biometric imaging devices and associated methods |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
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US10985204B2 (en) * | 2016-02-16 | 2021-04-20 | G-Ray Switzerland Sa | Structures, systems and methods for electrical charge transport across bonded interfaces |
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