JP4449405B2 - 窒化物半導体発光素子およびその製造方法 - Google Patents

窒化物半導体発光素子およびその製造方法 Download PDF

Info

Publication number
JP4449405B2
JP4449405B2 JP2003358664A JP2003358664A JP4449405B2 JP 4449405 B2 JP4449405 B2 JP 4449405B2 JP 2003358664 A JP2003358664 A JP 2003358664A JP 2003358664 A JP2003358664 A JP 2003358664A JP 4449405 B2 JP4449405 B2 JP 4449405B2
Authority
JP
Japan
Prior art keywords
electrode
layer
nitride semiconductor
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003358664A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005123489A (ja
JP2005123489A5 (enrdf_load_stackoverflow
Inventor
健 楠瀬
久嗣 笠井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2003358664A priority Critical patent/JP4449405B2/ja
Publication of JP2005123489A publication Critical patent/JP2005123489A/ja
Publication of JP2005123489A5 publication Critical patent/JP2005123489A5/ja
Application granted granted Critical
Publication of JP4449405B2 publication Critical patent/JP4449405B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2003358664A 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法 Expired - Fee Related JP4449405B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003358664A JP4449405B2 (ja) 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003358664A JP4449405B2 (ja) 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2005123489A JP2005123489A (ja) 2005-05-12
JP2005123489A5 JP2005123489A5 (enrdf_load_stackoverflow) 2006-12-07
JP4449405B2 true JP4449405B2 (ja) 2010-04-14

Family

ID=34615118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003358664A Expired - Fee Related JP4449405B2 (ja) 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP4449405B2 (enrdf_load_stackoverflow)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5138873B2 (ja) * 2005-05-19 2013-02-06 日亜化学工業株式会社 窒化物半導体素子
KR100833309B1 (ko) * 2006-04-04 2008-05-28 삼성전기주식회사 질화물계 반도체 발광소자
JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
US8878245B2 (en) 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
KR100809220B1 (ko) 2007-02-01 2008-02-29 삼성전기주식회사 반도체 발광소자
TWI366291B (en) * 2007-03-30 2012-06-11 Epistar Corp Semiconductor light-emitting device having stacked transparent electrodes
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP5115425B2 (ja) * 2008-09-24 2013-01-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
US8741715B2 (en) 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
JP4686625B2 (ja) 2009-08-03 2011-05-25 株式会社東芝 半導体発光装置の製造方法
JP5519383B2 (ja) * 2010-04-16 2014-06-11 シチズンホールディングス株式会社 半導体発光装置
KR101158080B1 (ko) * 2010-07-22 2012-06-22 서울옵토디바이스주식회사 발광다이오드
JP5211121B2 (ja) * 2010-08-06 2013-06-12 株式会社東芝 半導体発光素子の製造方法
JP5066274B1 (ja) * 2011-05-16 2012-11-07 株式会社東芝 半導体発光素子
JP5662277B2 (ja) * 2011-08-08 2015-01-28 株式会社東芝 半導体発光装置及び発光モジュール
JP5205502B2 (ja) * 2011-11-07 2013-06-05 株式会社東芝 半導体発光装置
JP2014157921A (ja) * 2013-02-15 2014-08-28 Stanley Electric Co Ltd 半導体素子及びその製造方法
JP2015026756A (ja) * 2013-07-29 2015-02-05 株式会社アルバック 発光ダイオード素子
JP6261927B2 (ja) * 2013-09-24 2018-01-17 スタンレー電気株式会社 半導体発光素子
JP6485019B2 (ja) * 2013-12-19 2019-03-20 日亜化学工業株式会社 半導体発光素子
JP2015173229A (ja) * 2014-03-12 2015-10-01 沖電気工業株式会社 透明電極構造、窒化物半導体発光ダイオード、及び透明電極成膜方法
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device

Also Published As

Publication number Publication date
JP2005123489A (ja) 2005-05-12

Similar Documents

Publication Publication Date Title
JP4449405B2 (ja) 窒化物半導体発光素子およびその製造方法
CN100433379C (zh) 半导体发光元件及其制造方法
JP4183299B2 (ja) 窒化ガリウム系化合物半導体発光素子
CN100423307C (zh) 设有保护二极管元件的半导体发光装置
JP5045336B2 (ja) 半導体発光素子
JP4946195B2 (ja) 半導体発光素子及びその製造方法
JP4889193B2 (ja) 窒化物半導体発光素子
JP2006100500A (ja) 半導体発光素子及びその製造方法
JP2008210903A (ja) 半導体発光素子
JP2008108905A (ja) 半導体発光素子
JP5780242B2 (ja) 窒化物系半導体発光素子
JPWO2006082687A1 (ja) ＧａＮ系発光ダイオードおよび発光装置
JP5138873B2 (ja) 窒化物半導体素子
JP2011061192A (ja) 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、半導体発光装置の製造方法、半導体発光装置を用いた照明装置および電子機器
JP3994287B2 (ja) 半導体発光素子
JP2012138479A (ja) 発光素子およびその製造方法
JP2008218878A (ja) ＧａＮ系ＬＥＤ素子および発光装置
JP6040769B2 (ja) 発光素子及びその製造方法
JP5761171B2 (ja) 窒化物半導体発光素子及びその製造方法
US6653215B1 (en) Contact to n-GaN with Au termination
JP4738999B2 (ja) 半導体光素子の製造方法
JP2004228540A (ja) 発光素子
JP3344296B2 (ja) 半導体発光素子用の電極
JP2012064759A (ja) 半導体発光装置、半導体発光装置の製造方法
JP6119906B2 (ja) 発光素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061019

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061019

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090303

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090825

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091022

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100105

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100118

R150 Certificate of patent or registration of utility model

Ref document number: 4449405

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130205

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130205

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130205

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees