JP4431088B2 - 有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置及びその製造方法 - Google Patents
有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置及びその製造方法 Download PDFInfo
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
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- GKQFYZWYVBQCHT-UHFFFAOYSA-N n-naphthalen-1-yl-n-[4-[4-(n-phenylanilino)phenyl]phenyl]naphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C2=CC=CC=C2C=CC=1)C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 GKQFYZWYVBQCHT-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
Description
411…第1ゲート電極、
412…第1電極、
413…第2電極、
440…ストレージキャパシタ、
441…第1キャパシタ電極、
442…第2キャパシタ電極、
450…第2有機TFT、
451…第2ゲート電極、
452…第3電極、
453…第4電極、
460…EL素子、
461…対向電極、
462…画素電極、
480…n型有機半導体層、
481…基板、
483…ゲート絶縁膜、
483a…第2コンタクトホール、
485…保護膜、
485a…第1コンタクトホール、
486…画素定義膜、
487…中間層、
491…赤色発光副画素、
492…緑色発光副画素、
493…青色発光副画素、
495…カラーフィルタ、
496…色変換層。
Claims (14)
- 基板上に全面的に形成された対向電極と、
前記対向電極上に備えられた、少なくとも発光層を含む中間層と、
前記中間層上に備えられた画素電極と、
前記画素電極の上部に備えられ、前記画素電極と絶縁される第1電極と、
前記画素電極の上部に備えられ、前記画素電極と連結される第2電極と、
前記第1電極と連結される第1キャパシタ電極、及び前記第1キャパシタ電極に対向配置された第2キャパシタ電極を備え、前記画素電極の上部に備えられるキャパシタと、
前記画素電極の上部に備えられ、前記第2キャパシタ電極に連結される第4電極と、
前記画素電極の上部に備えられ、前記第1電極、前記第2電極及び第4電極と接触するn型有機半導体層と、
前記画素電極の上部に備えられ、前記有機半導体層に接触する第3電極と、
前記n型有機半導体層の上部に備えられ、前記第2キャパシタ電極と連結され、前記第1電極、前記第2電極及び前記n型有機半導体層と絶縁された第1ゲート電極と、
前記n型有機半導体層の上部に備えられ、前記第4電極、前記第3電極及び前記有機半導体層と絶縁された第2ゲート電極と、を含むことを特徴とする有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。 - 前記画素電極上に保護膜が備えられ、前記保護膜上に前記第1電極及び前記第2電極が備えられ、前記第2電極は、前記保護膜に備えられたコンタクトホールを通じて前記画素電極と連結されることを特徴とする請求項1に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 前記n型有機半導体層上にゲート絶縁膜が備えられ、前記ゲート絶縁膜上に前記第1ゲート電極が備えられることを特徴とする請求項1または請求項2に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 前記ゲート絶縁膜は、有機物であることを特徴とする請求項3に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 前記第2電極、前記第1電極、前記第1キャパシタ電極、前記第4電極及び前記第3電極は、同一平面に備えられ、
前記第1ゲート電極、前記第2キャパシタ電極及び前記第2ゲート電極は、同一平面に備えられることを特徴とする請求項1〜4のいずれか一項に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。 - 前記対向電極は透明電極であり、前記画素電極は反射型電極であることを特徴とする請求項1〜5のいずれか一項に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 前記対向電極上に画素定義膜が備えられていることを特徴とする請求項1〜6のいずれか一項に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 前記中間層に含まれた発光層は、赤色、緑色または青色光を放出する発光層であることを特徴とする請求項1〜7のいずれか一項に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 前記発光層は、白色光を放出する発光層であり、前記対向電極と前記発光層とを含む中間層の間に、前記発光層から放出された白色光を赤色、緑色または青色光にフィルタリングするカラーフィルタがさらに備えられたことを特徴とする請求項1〜7のいずれか一項に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 前記発光層は、青色光を放出する発光層であり、前記対向電極と前記発光層とを含む中間層の間に、前記発光層から放出された青色光を赤色、緑色または青色光に変換させる色変換層がさらに備えられたことを特徴とする請求項1〜7のいずれか一項に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置。
- 基板上に全面的に対向電極を設ける段階と、
前記対向電極上に少なくとも発光層を含む中間層を設ける段階と、
前記中間層上に所定パターンで画素電極を形成する段階と、
前記画素電極を覆いつつ前記基板の全面に保護膜を設ける段階と、
前記保護膜に前記画素電極が露出されるように第1コンタクトホールを形成する段階と、
前記保護膜上に、前記第1コンタクトホールを通じて前記画素電極に連結される第2電極と、第4電極と、第3電極とを形成し、第1電極及び第1キャパシタ電極を一体に形成する段階と、
前記第1電極、前記第2電極、前記第3電極および前記第4電極をそれぞれ覆いつつ、前記基板の全面に備えられるn型有機半導体層を設ける段階と、
前記n型有機半導体層上に前記基板の全面に備えられるゲート絶縁膜を設ける段階と、
前記第4電極が露出されるように、前記n型有機半導体層及び前記ゲート絶縁膜内に第2コンタクトホールを形成する段階と、
前記ゲート絶縁膜上に、第1ゲート電極と、前記第2コンタクトホールを通じて前記第4電極に連結され、前記第1キャパシタ電極の上部に備えられる第2キャパシタ電極と、第2ゲート電極と、を形成する段階と、を含むことを特徴とする有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置の製造方法。 - 前記対向電極を設ける段階と前記中間層を設ける段階との間に、画素定義膜を設ける段階をさらに有することを特徴とする請求項11に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置の製造方法。
- 前記発光層は、白色光を放出する発光層であり、
前記対向電極を設ける段階以前に、前記基板上に前記発光層から放出された白色光を赤色、緑色または青色光にフィルタリングするカラーフィルタを設ける段階をさらに有することを特徴とする請求項11または請求項12に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置の製造方法。 - 前記発光層は、青色光を放出する発光層であり、
前記対向電極を備える段階以前に、前記基板上に前記発光層から放出された青色光を赤色、緑色または青色光に変換させる色変換層を備える段階をさらに有することを特徴とする請求項11または請求項12に記載の有機薄膜トランジスタを備えた能動駆動型の有機電界発光ディスプレイ装置の製造方法。
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