JP4421202B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4421202B2
JP4421202B2 JP2003077174A JP2003077174A JP4421202B2 JP 4421202 B2 JP4421202 B2 JP 4421202B2 JP 2003077174 A JP2003077174 A JP 2003077174A JP 2003077174 A JP2003077174 A JP 2003077174A JP 4421202 B2 JP4421202 B2 JP 4421202B2
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Japan
Prior art keywords
semiconductor film
film
display device
island
laser
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Expired - Fee Related
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JP2003077174A
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English (en)
Japanese (ja)
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JP2004006726A (ja
JP2004006726A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003077174A priority Critical patent/JP4421202B2/ja
Publication of JP2004006726A publication Critical patent/JP2004006726A/ja
Publication of JP2004006726A5 publication Critical patent/JP2004006726A5/ja
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Publication of JP4421202B2 publication Critical patent/JP4421202B2/ja
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003077174A 2002-03-26 2003-03-20 表示装置の作製方法 Expired - Fee Related JP4421202B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003077174A JP4421202B2 (ja) 2002-03-26 2003-03-20 表示装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002085938 2002-03-26
JP2003077174A JP4421202B2 (ja) 2002-03-26 2003-03-20 表示装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009151783A Division JP5235169B2 (ja) 2002-03-26 2009-06-26 表示装置

Publications (3)

Publication Number Publication Date
JP2004006726A JP2004006726A (ja) 2004-01-08
JP2004006726A5 JP2004006726A5 (enExample) 2006-04-13
JP4421202B2 true JP4421202B2 (ja) 2010-02-24

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ID=30446005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003077174A Expired - Fee Related JP4421202B2 (ja) 2002-03-26 2003-03-20 表示装置の作製方法

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JP (1) JP4421202B2 (enExample)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125663A (ja) * 1983-01-05 1984-07-20 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPH02143417A (ja) * 1988-11-24 1990-06-01 Sharp Corp 半導体装置の製造方法
JPH04186725A (ja) * 1990-11-21 1992-07-03 Hitachi Ltd レーザアニール装置及びアライメント法
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3316180B2 (ja) * 1998-03-30 2002-08-19 株式会社半導体エネルギー研究所 薄膜半導体装置の作製方法
JP3897965B2 (ja) * 1999-08-13 2007-03-28 株式会社半導体エネルギー研究所 レーザー装置及びレーザーアニール方法
JP4836333B2 (ja) * 2000-01-28 2011-12-14 株式会社半導体エネルギー研究所 半導体装置
JP4683761B2 (ja) * 2000-05-12 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法

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Publication number Publication date
JP2004006726A (ja) 2004-01-08

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