JP4417693B2 - Dc−dc変換回路 - Google Patents
Dc−dc変換回路 Download PDFInfo
- Publication number
- JP4417693B2 JP4417693B2 JP2003382336A JP2003382336A JP4417693B2 JP 4417693 B2 JP4417693 B2 JP 4417693B2 JP 2003382336 A JP2003382336 A JP 2003382336A JP 2003382336 A JP2003382336 A JP 2003382336A JP 4417693 B2 JP4417693 B2 JP 4417693B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- thin film
- film transistor
- type thin
- clock signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/078—Charge pumps of the Schenkel-type with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Dc-Dc Converters (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Logic Circuits (AREA)
Description
本実施の形態では、入力電圧を昇圧して出力電圧とする昇圧型のDC−DC変換回路について説明する。図1の回路図に示すように、本DC−DC変換回路は、第1基準電圧源YVDD、第1キャパシタC1、第2キャパシタC2、第3キャパシタC3、第1のN型薄膜トランジスタN1、第1のP型薄膜トランジスタP1、第2のN型薄膜トランジスタN2、第2のP型薄膜トランジスタP2、第1ダイオードD1を有する構成である。
本実施の形態では、入力電圧を降圧して出力電圧とする降圧型のDC−DC変換回路について説明する。図10の回路図に示すように、本DC−DC変換回路は、第2基準電圧源GND、第4キャパシタC4、第5キャパシタC5、第6キャパシタC6、第3のP型薄膜トランジスタP3、第3のN型薄膜トランジスタN3、第4のP型薄膜トランジスタP4、第4のN型薄膜トランジスタN4、第2ダイオードD2を有する構成である。
本実施の形態における昇圧型のDC−DC変換回路は、図18、図19の回路図に示すように、第1基準電圧源YVDDの出力段にスイッチング素子P5を接続するとともに、第3キャパシタC3の入力段にスイッチング素子P6を接続した構成である。スイッチング素子P5,P6は、一例として、それぞれポリシリコンを材料とするP型薄膜トランジスタとする。それぞれのゲート電極にはイネーブル信号OE+が供給される。その他の部分は、第1の実施の形態のものと同様であるので、図3、図4と同一物には同一の符号を付すこととし、ここでは重複した説明は省略する。
本実施の形態における降圧型のDC−DC変換回路は、図23、図24の回路図に示すように、第1基準電圧源YVDDの出力段にスイッチング素子N5を接続するとともに、第3キャパシタC3の入力段にスイッチング素子N6を接続した構成である。スイッチング素子N5,N6は、一例として、それぞれポリシリコンを材料とするN型薄膜トランジスタとする。それぞれのゲート電極にはイネーブル信号OE−が供給される。その他の部分は、第2の実施の形態のものと同様であるので、図12、図13と同一物には同一の符号を付すこととして、ここでは重複した説明は省略する。
C2…第2キャパシタ
C3…第3キャパシタ
C4…第4キャパシタ
C5…第5キャパシタ
C6…第6キャパシタ
D1…第1ダイオード
D2…第2ダイオード
N1…第1のN型薄膜トランジスタ
N2…第2のN型薄膜トランジスタ
N3…第3のN型薄膜トランジスタ
N4…第4のN型薄膜トランジスタ
P1…第1のP型薄膜トランジスタ
P2…第2のP型薄膜トランジスタ
P3…第3のP型薄膜トランジスタ
P4…第4のP型薄膜トランジスタ
N5,N6…スイッチング素子
P5,P6…スイッチング素子
YVDD…第1基準電圧源
GND…第2基準電圧源
Claims (2)
- 第2基準電圧源と、
第3クロック信号源が第1端に接続された第4キャパシタと、
第3クロック信号の反転信号を出力する第4クロック信号源に第1端が接続された第5キャパシタと、
端子間電圧が出力電圧となる第6キャパシタと、
第4キャパシタの第2端にゲート電極が接続され、第2基準電圧源にソース電極が接続され、第5キャパシタの第2端にドレイン電極が接続された第3のP型薄膜トランジスタと、
第4キャパシタの第2端にゲート電極が接続され、第6キャパシタの第2端にソース電極が接続され、第5キャパシタの第2端にドレイン電極が接続された第3のN型薄膜トランジスタと、
第4キャパシタの第2端から第2基準電圧源に向かって順方向に接続された第2ダイオードと、
第5キャパシタの第2端にゲート電極が接続され、第2基準電圧にソース電極が接続され、第4キャパシタの第2端にドレイン電極が接続された第4のP型薄膜トランジスタと、
第5キャパシタの第2端にゲート電極が接続され、第6キャパシタの第2端にソース電極が接続され、第4キャパシタの第2端にドレイン電極が接続された第4のN型薄膜トランジスタと、を有し、
第2基準電圧源の出力段と第6キャパシタの入力段にそれぞれスイッチング素子を設け、第3クロック信号および第4クロック信号が反転する直前から反転した直後までの期間において各スイッチング素子をオフさせることを特徴とするDC−DC変換回路。 - 第3クロック信号源および第4クロック信号源の出力信号は、それぞれオン・オフデューティ比が略50%であることを特徴とする請求項1記載のDC−DC変換回路。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382336A JP4417693B2 (ja) | 2003-11-12 | 2003-11-12 | Dc−dc変換回路 |
US10/971,068 US7184285B2 (en) | 2003-11-12 | 2004-10-25 | DC-DC conversion circuit |
TW093133922A TWI283393B (en) | 2003-11-12 | 2004-11-05 | DC-DC conversion circuit |
KR1020040092038A KR100607617B1 (ko) | 2003-11-12 | 2004-11-11 | Dc-dc 변환 회로 |
CNB2004100927201A CN100353653C (zh) | 2003-11-12 | 2004-11-11 | Dc-dc(直流-直流)变换电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382336A JP4417693B2 (ja) | 2003-11-12 | 2003-11-12 | Dc−dc変換回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005151634A JP2005151634A (ja) | 2005-06-09 |
JP4417693B2 true JP4417693B2 (ja) | 2010-02-17 |
Family
ID=34544691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003382336A Expired - Fee Related JP4417693B2 (ja) | 2003-11-12 | 2003-11-12 | Dc−dc変換回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7184285B2 (ja) |
JP (1) | JP4417693B2 (ja) |
KR (1) | KR100607617B1 (ja) |
CN (1) | CN100353653C (ja) |
TW (1) | TWI283393B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101159318B1 (ko) | 2005-05-31 | 2012-06-22 | 엘지디스플레이 주식회사 | 액정 표시 장치 |
GB2434686A (en) * | 2006-01-31 | 2007-08-01 | Sharp Kk | A drive circuit including a voltage booster |
US7443202B2 (en) | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
JP5069950B2 (ja) * | 2006-06-02 | 2012-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
KR20080011896A (ko) * | 2006-08-01 | 2008-02-11 | 삼성전자주식회사 | 게이트 온 전압 발생회로와 게이트 오프 전압 발생회로 및이들을 갖는 액정표시장치 |
KR101375864B1 (ko) * | 2006-12-11 | 2014-03-17 | 삼성디스플레이 주식회사 | 전압 승압 장치, 전압 승강압장치 및 액정표시장치 |
CN101373930B (zh) * | 2007-08-24 | 2010-12-08 | 群康科技(深圳)有限公司 | 直流电压转换电路 |
TWI512997B (zh) * | 2009-09-24 | 2015-12-11 | Semiconductor Energy Lab | 半導體裝置,電源電路,和半導體裝置的製造方法 |
CN102959612A (zh) * | 2010-06-30 | 2013-03-06 | 富士通先端科技株式会社 | 显示装置和显示装置的控制方法 |
US9741449B1 (en) * | 2016-08-09 | 2017-08-22 | Nxp Usa, Inc. | Sample and hold circuit |
US10050526B2 (en) | 2016-08-09 | 2018-08-14 | Nxp Usa, Inc. | Switching power converter |
Family Cites Families (20)
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JPS57140029A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Output circuit |
IT1221261B (it) * | 1988-06-28 | 1990-06-27 | Sgs Thomson Microelectronics | Moltiplicatore di tensione omos |
KR0139664B1 (ko) * | 1995-04-18 | 1998-08-17 | 김광호 | 박막 트랜지스터 액정 표시장치용 직류-직류 컨버터 |
DE19627197C1 (de) * | 1996-07-05 | 1998-03-26 | Siemens Ag | Vorrichtung zur Spannungsvervielfachung mit geringer Abhängigkeit der Ausgangsspannung von der Versorgungsspannung |
US5982223A (en) * | 1997-06-20 | 1999-11-09 | Integrated Silicon Solution, Inc. | Charge pump system with improved programming current distribution |
EP0928060A1 (fr) * | 1997-12-31 | 1999-07-07 | Koninklijke Philips Electronics N.V. | Convertisseur de tension continue à rendement amélioré |
US6026003A (en) * | 1998-12-18 | 2000-02-15 | Motorola, Inc. | Charge pump circuit and method for generating a bias voltage |
JP3250540B2 (ja) * | 1999-03-15 | 2002-01-28 | 日本電気株式会社 | Pll回路 |
US6037622A (en) * | 1999-03-29 | 2000-03-14 | Winbond Electronics Corporation | Charge pump circuits for low supply voltages |
US6429723B1 (en) * | 1999-11-18 | 2002-08-06 | Texas Instruments Incorporated | Integrated circuit with charge pump and method |
KR20010061843A (ko) * | 1999-12-29 | 2001-07-07 | 박종섭 | 극성 신호를 이용한 액정 표시 장치의 dc-dc 컨버터 |
JP4612153B2 (ja) | 2000-05-31 | 2011-01-12 | 東芝モバイルディスプレイ株式会社 | 平面表示装置 |
TWI238375B (en) | 2000-05-31 | 2005-08-21 | Toshiba Corp | Pumping circuit and flat panel display device |
US6664846B1 (en) * | 2000-08-30 | 2003-12-16 | Altera Corporation | Cross coupled N-channel negative pump |
JP4654509B2 (ja) | 2000-12-07 | 2011-03-23 | ソニー株式会社 | 電源電圧変換回路およびその制御方法、ならびに表示装置および携帯端末 |
US6525949B1 (en) * | 2000-12-22 | 2003-02-25 | Matrix Semiconductor, Inc. | Charge pump circuit |
JP2002238243A (ja) | 2001-02-07 | 2002-08-23 | Seiko Epson Corp | Dc/dcコンバータおよび液晶用電源装置 |
US6661682B2 (en) * | 2001-02-16 | 2003-12-09 | Imec (Interuniversitair Microelectronica Centrum) | High voltage generating charge pump circuit |
TW564434B (en) * | 2002-02-22 | 2003-12-01 | Ememory Technology Inc | Charge pump circuit without body effects |
ITTO20020158A1 (it) * | 2002-02-25 | 2003-08-25 | St Microelectronics Srl | Pompa di carica per tensioni negative. |
-
2003
- 2003-11-12 JP JP2003382336A patent/JP4417693B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-25 US US10/971,068 patent/US7184285B2/en not_active Expired - Fee Related
- 2004-11-05 TW TW093133922A patent/TWI283393B/zh not_active IP Right Cessation
- 2004-11-11 KR KR1020040092038A patent/KR100607617B1/ko active IP Right Grant
- 2004-11-11 CN CNB2004100927201A patent/CN100353653C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7184285B2 (en) | 2007-02-27 |
KR20050045916A (ko) | 2005-05-17 |
US20050099167A1 (en) | 2005-05-12 |
KR100607617B1 (ko) | 2006-08-02 |
CN100353653C (zh) | 2007-12-05 |
TWI283393B (en) | 2007-07-01 |
JP2005151634A (ja) | 2005-06-09 |
CN1617215A (zh) | 2005-05-18 |
TW200527367A (en) | 2005-08-16 |
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