JP4401814B2 - 測長用標準部材及び電子ビーム測長装置 - Google Patents

測長用標準部材及び電子ビーム測長装置 Download PDF

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Publication number
JP4401814B2
JP4401814B2 JP2004049218A JP2004049218A JP4401814B2 JP 4401814 B2 JP4401814 B2 JP 4401814B2 JP 2004049218 A JP2004049218 A JP 2004049218A JP 2004049218 A JP2004049218 A JP 2004049218A JP 4401814 B2 JP4401814 B2 JP 4401814B2
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JP
Japan
Prior art keywords
diffraction grating
pattern
grating unit
electron beam
pitch
Prior art date
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Expired - Fee Related
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JP2004049218A
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English (en)
Japanese (ja)
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JP2005241328A5 (enExample
JP2005241328A (ja
Inventor
義則 中山
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2004049218A priority Critical patent/JP4401814B2/ja
Priority to US11/028,219 priority patent/US7078691B2/en
Publication of JP2005241328A publication Critical patent/JP2005241328A/ja
Priority to US11/481,973 priority patent/US7358495B2/en
Publication of JP2005241328A5 publication Critical patent/JP2005241328A5/ja
Application granted granted Critical
Publication of JP4401814B2 publication Critical patent/JP4401814B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/042—Calibration or calibration artifacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/282—Determination of microscope properties
    • H01J2237/2826—Calibration

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
JP2004049218A 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置 Expired - Fee Related JP4401814B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004049218A JP4401814B2 (ja) 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置
US11/028,219 US7078691B2 (en) 2004-02-25 2005-01-04 Standard reference for metrology and calibration method of electron-beam metrology system using the same
US11/481,973 US7358495B2 (en) 2004-02-25 2006-07-07 Standard reference for metrology and calibration method of electron-beam metrology system using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004049218A JP4401814B2 (ja) 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置

Publications (3)

Publication Number Publication Date
JP2005241328A JP2005241328A (ja) 2005-09-08
JP2005241328A5 JP2005241328A5 (enExample) 2006-12-14
JP4401814B2 true JP4401814B2 (ja) 2010-01-20

Family

ID=34858240

Family Applications (1)

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JP2004049218A Expired - Fee Related JP4401814B2 (ja) 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置

Country Status (2)

Country Link
US (2) US7078691B2 (enExample)
JP (1) JP4401814B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4287671B2 (ja) * 2003-02-19 2009-07-01 株式会社日立ハイテクノロジーズ 測長用標準部材およびその作製方法、並びにそれを用いた電子ビーム測長装置
JP4194526B2 (ja) * 2004-05-14 2008-12-10 株式会社日立ハイテクノロジーズ 荷電粒子線の調整方法、及び荷電粒子線装置
JP4276140B2 (ja) * 2004-06-25 2009-06-10 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及び寸法校正用試料
US7408154B2 (en) * 2004-10-29 2008-08-05 Hitachi High-Technologies Corporation Scanning electron microscope, method for measuring a dimension of a pattern using the same, and apparatus for correcting difference between scanning electron microscopes
JP2006234588A (ja) * 2005-02-25 2006-09-07 Hitachi High-Technologies Corp パターン測定方法、及びパターン測定装置
US8825444B1 (en) 2005-05-19 2014-09-02 Nanometrics Incorporated Automated system check for metrology unit
JP4839127B2 (ja) * 2006-05-10 2011-12-21 株式会社日立ハイテクノロジーズ 校正用標準部材及びこれを用いた校正方法および電子ビーム装置
JP2007328038A (ja) * 2006-06-06 2007-12-20 Hitachi High-Technologies Corp 顕微鏡用寸法校正試料
US7777884B2 (en) * 2007-01-23 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for optimizing sub-nanometer critical dimension using pitch offset
JP5361137B2 (ja) * 2007-02-28 2013-12-04 株式会社日立ハイテクノロジーズ 荷電粒子ビーム測長装置
US7605907B2 (en) * 2007-03-27 2009-10-20 Asml Netherlands B.V. Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method
US7788818B1 (en) * 2007-10-02 2010-09-07 Sandia Corporation Mesoscale hybrid calibration artifact
SG153747A1 (en) * 2007-12-13 2009-07-29 Asml Netherlands Bv Alignment method, alignment system and product with alignment mark
DE102008052006B4 (de) * 2008-10-10 2018-12-20 3D-Micromac Ag Verfahren und Vorrichtung zur Herstellung von Proben für die Transmissionselektronenmikroskopie
JP4902806B2 (ja) * 2011-07-22 2012-03-21 株式会社日立ハイテクノロジーズ 校正用標準部材
US8624199B2 (en) * 2011-10-28 2014-01-07 Fei Company Sample block holder
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
JP6605276B2 (ja) 2015-09-28 2019-11-13 株式会社日立ハイテクノロジーズ 計測装置、計測装置の校正方法および校正部材
CN106483049B (zh) * 2016-11-01 2019-08-13 浙江省计量科学研究院 一种刮板细度计示值误差的非接触自动校准装置及方法
US20200388462A1 (en) * 2017-12-05 2020-12-10 Asml Netherlands B.V. Systems and methods for tuning and calibrating charged particle beam apparatus
CN109444472A (zh) * 2018-12-19 2019-03-08 中国电子科技集团公司第十三研究所 扫描电子显微镜校准图形样片及制备方法
CN109855572A (zh) * 2018-12-25 2019-06-07 中国电子科技集团公司第十三研究所 用于校准光学轮廓仪粗糙度的线距样板及制备方法
CN111024016B (zh) * 2019-12-04 2021-10-15 中国电子科技集团公司第十三研究所 一种膜厚样片及膜厚样片的制备方法
CN116157708A (zh) * 2020-07-20 2023-05-23 应用材料公司 光学装置和光学装置计量的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422723A (en) * 1992-09-21 1995-06-06 Texas Instruments Incorporated Diffraction gratings for submicron linewidth measurement
JP2544588B2 (ja) 1994-07-29 1996-10-16 株式会社日立製作所 測長用校正部材及びその作製方法
JP2000232138A (ja) 1999-02-09 2000-08-22 Hitachi Ltd 半導体装置とそのマーク形成装置，その欠陥検査装置
JP3843671B2 (ja) 1999-10-29 2006-11-08 株式会社日立製作所 半導体デバイスパターンの検査装置及びその欠陥検査・不良解析方法
US7289212B2 (en) * 2000-08-24 2007-10-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufacturing thereby
JP4287671B2 (ja) 2003-02-19 2009-07-01 株式会社日立ハイテクノロジーズ 測長用標準部材およびその作製方法、並びにそれを用いた電子ビーム測長装置

Also Published As

Publication number Publication date
US20050184234A1 (en) 2005-08-25
US7078691B2 (en) 2006-07-18
US7358495B2 (en) 2008-04-15
JP2005241328A (ja) 2005-09-08
US20060289756A1 (en) 2006-12-28

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