JP2005241328A5 - - Google Patents

Download PDF

Info

Publication number
JP2005241328A5
JP2005241328A5 JP2004049218A JP2004049218A JP2005241328A5 JP 2005241328 A5 JP2005241328 A5 JP 2005241328A5 JP 2004049218 A JP2004049218 A JP 2004049218A JP 2004049218 A JP2004049218 A JP 2004049218A JP 2005241328 A5 JP2005241328 A5 JP 2005241328A5
Authority
JP
Japan
Prior art keywords
diffraction grating
grating unit
unit pattern
length
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004049218A
Other languages
English (en)
Japanese (ja)
Other versions
JP4401814B2 (ja
JP2005241328A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004049218A priority Critical patent/JP4401814B2/ja
Priority claimed from JP2004049218A external-priority patent/JP4401814B2/ja
Priority to US11/028,219 priority patent/US7078691B2/en
Publication of JP2005241328A publication Critical patent/JP2005241328A/ja
Priority to US11/481,973 priority patent/US7358495B2/en
Publication of JP2005241328A5 publication Critical patent/JP2005241328A5/ja
Application granted granted Critical
Publication of JP4401814B2 publication Critical patent/JP4401814B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004049218A 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置 Expired - Fee Related JP4401814B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004049218A JP4401814B2 (ja) 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置
US11/028,219 US7078691B2 (en) 2004-02-25 2005-01-04 Standard reference for metrology and calibration method of electron-beam metrology system using the same
US11/481,973 US7358495B2 (en) 2004-02-25 2006-07-07 Standard reference for metrology and calibration method of electron-beam metrology system using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004049218A JP4401814B2 (ja) 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置

Publications (3)

Publication Number Publication Date
JP2005241328A JP2005241328A (ja) 2005-09-08
JP2005241328A5 true JP2005241328A5 (enExample) 2006-12-14
JP4401814B2 JP4401814B2 (ja) 2010-01-20

Family

ID=34858240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004049218A Expired - Fee Related JP4401814B2 (ja) 2004-02-25 2004-02-25 測長用標準部材及び電子ビーム測長装置

Country Status (2)

Country Link
US (2) US7078691B2 (enExample)
JP (1) JP4401814B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4287671B2 (ja) * 2003-02-19 2009-07-01 株式会社日立ハイテクノロジーズ 測長用標準部材およびその作製方法、並びにそれを用いた電子ビーム測長装置
JP4194526B2 (ja) * 2004-05-14 2008-12-10 株式会社日立ハイテクノロジーズ 荷電粒子線の調整方法、及び荷電粒子線装置
JP4276140B2 (ja) * 2004-06-25 2009-06-10 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及び寸法校正用試料
US7408154B2 (en) * 2004-10-29 2008-08-05 Hitachi High-Technologies Corporation Scanning electron microscope, method for measuring a dimension of a pattern using the same, and apparatus for correcting difference between scanning electron microscopes
JP2006234588A (ja) * 2005-02-25 2006-09-07 Hitachi High-Technologies Corp パターン測定方法、及びパターン測定装置
US8825444B1 (en) 2005-05-19 2014-09-02 Nanometrics Incorporated Automated system check for metrology unit
JP4839127B2 (ja) * 2006-05-10 2011-12-21 株式会社日立ハイテクノロジーズ 校正用標準部材及びこれを用いた校正方法および電子ビーム装置
JP2007328038A (ja) * 2006-06-06 2007-12-20 Hitachi High-Technologies Corp 顕微鏡用寸法校正試料
US7777884B2 (en) * 2007-01-23 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for optimizing sub-nanometer critical dimension using pitch offset
JP5361137B2 (ja) * 2007-02-28 2013-12-04 株式会社日立ハイテクノロジーズ 荷電粒子ビーム測長装置
US7605907B2 (en) * 2007-03-27 2009-10-20 Asml Netherlands B.V. Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method
US7788818B1 (en) * 2007-10-02 2010-09-07 Sandia Corporation Mesoscale hybrid calibration artifact
SG153747A1 (en) * 2007-12-13 2009-07-29 Asml Netherlands Bv Alignment method, alignment system and product with alignment mark
DE102008052006B4 (de) * 2008-10-10 2018-12-20 3D-Micromac Ag Verfahren und Vorrichtung zur Herstellung von Proben für die Transmissionselektronenmikroskopie
JP4902806B2 (ja) * 2011-07-22 2012-03-21 株式会社日立ハイテクノロジーズ 校正用標準部材
US8624199B2 (en) * 2011-10-28 2014-01-07 Fei Company Sample block holder
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
JP6605276B2 (ja) 2015-09-28 2019-11-13 株式会社日立ハイテクノロジーズ 計測装置、計測装置の校正方法および校正部材
CN106483049B (zh) * 2016-11-01 2019-08-13 浙江省计量科学研究院 一种刮板细度计示值误差的非接触自动校准装置及方法
US20200388462A1 (en) * 2017-12-05 2020-12-10 Asml Netherlands B.V. Systems and methods for tuning and calibrating charged particle beam apparatus
CN109444472A (zh) * 2018-12-19 2019-03-08 中国电子科技集团公司第十三研究所 扫描电子显微镜校准图形样片及制备方法
CN109855572A (zh) * 2018-12-25 2019-06-07 中国电子科技集团公司第十三研究所 用于校准光学轮廓仪粗糙度的线距样板及制备方法
CN111024016B (zh) * 2019-12-04 2021-10-15 中国电子科技集团公司第十三研究所 一种膜厚样片及膜厚样片的制备方法
CN116157708A (zh) * 2020-07-20 2023-05-23 应用材料公司 光学装置和光学装置计量的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422723A (en) * 1992-09-21 1995-06-06 Texas Instruments Incorporated Diffraction gratings for submicron linewidth measurement
JP2544588B2 (ja) 1994-07-29 1996-10-16 株式会社日立製作所 測長用校正部材及びその作製方法
JP2000232138A (ja) 1999-02-09 2000-08-22 Hitachi Ltd 半導体装置とそのマーク形成装置，その欠陥検査装置
JP3843671B2 (ja) 1999-10-29 2006-11-08 株式会社日立製作所 半導体デバイスパターンの検査装置及びその欠陥検査・不良解析方法
US7289212B2 (en) * 2000-08-24 2007-10-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufacturing thereby
JP4287671B2 (ja) 2003-02-19 2009-07-01 株式会社日立ハイテクノロジーズ 測長用標準部材およびその作製方法、並びにそれを用いた電子ビーム測長装置

Similar Documents

Publication Publication Date Title
JP2005241328A5 (enExample)
TWI421642B (zh) 使用ｘ射線的疊對量測
US8243273B2 (en) Enhanced OVL dummy field enabling “on-the-fly” OVL measurement methods
JP4401814B2 (ja) 測長用標準部材及び電子ビーム測長装置
US4074131A (en) Apparatus for measuring or setting two-dimensional position coordinates
JP5051295B2 (ja) 微細構造体検査方法、微細構造体検査装置、および微細構造体検査プログラム
JP2015531060A (ja) 局所測定を用いた試料の特徴付けのための装置及び方法
JP6119981B2 (ja) 校正治具および光干渉測定装置の校正方法
JP4269393B2 (ja) アライメントマーク及びアライメント方法
US9268124B2 (en) Microscope and method for characterizing structures on an object
TWI700721B (zh) 試料保持具及試料保持具群
US7952625B2 (en) Calibration element for calibrating the magnification ratio of a camera, and a calibration method
Eifler et al. User-oriented evaluation of the metrological characteristics of areal surface topography measuring instruments
TWI501049B (zh) 對於分區曝光之物體而測量其中一區之相對局部位置誤差之方法與裝置
JP6203502B2 (ja) 加工品に対して加工工具を位置決めするための構造および方法
CN1072354C (zh) 光束方向微小漂移检测系统
JP5725528B2 (ja) 光束平行度測定装置
CN110806388B (zh) 柱状镭射纸的暗光柱定位装置、定位方法及颜色测量方法
Krüger et al. Characterization progress of a UV-microscope recently implemented at the PTB Nanometer Comparator for uni-and bidirectional measurements
JP4853961B2 (ja) 光束の拡がり角測定装置
KR101607106B1 (ko) 나노구조체들 사이의 평균 간격 측정 시스템
JP3808467B2 (ja) 球面収差測定パターンおよび測定方法
KR101806049B1 (ko) 광의 파면 곡률 반지름 측정 방법
KR100795543B1 (ko) 마이크로 광학소자 어레이의 3차원 표면조도 측정장치
KR100927542B1 (ko) 간섭 광학식 2차원 변형률측정 장치 및 방법