JP4401641B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4401641B2
JP4401641B2 JP2002323901A JP2002323901A JP4401641B2 JP 4401641 B2 JP4401641 B2 JP 4401641B2 JP 2002323901 A JP2002323901 A JP 2002323901A JP 2002323901 A JP2002323901 A JP 2002323901A JP 4401641 B2 JP4401641 B2 JP 4401641B2
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Japan
Prior art keywords
region
film
gate electrode
layer
dry etching
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Expired - Fee Related
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JP2002323901A
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Japanese (ja)
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JP2003209260A5 (https=
JP2003209260A (ja
Inventor
悟 岡本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002323901A priority Critical patent/JP4401641B2/ja
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Publication of JP2003209260A5 publication Critical patent/JP2003209260A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2002323901A 2001-11-07 2002-11-07 半導体装置の作製方法 Expired - Fee Related JP4401641B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002323901A JP4401641B2 (ja) 2001-11-07 2002-11-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-342212 2001-11-07
JP2001342212 2001-11-07
JP2002323901A JP4401641B2 (ja) 2001-11-07 2002-11-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003209260A JP2003209260A (ja) 2003-07-25
JP2003209260A5 JP2003209260A5 (https=) 2005-12-08
JP4401641B2 true JP4401641B2 (ja) 2010-01-20

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ID=27666969

Family Applications (1)

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JP2002323901A Expired - Fee Related JP4401641B2 (ja) 2001-11-07 2002-11-07 半導体装置の作製方法

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JP (1) JP4401641B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285809A (ja) * 2004-03-26 2005-10-13 Sony Corp 半導体装置およびその製造方法
JP5177971B2 (ja) * 2005-07-29 2013-04-10 株式会社半導体エネルギー研究所 半導体装置の作製方法、及び半導体装置
US7867791B2 (en) 2005-07-29 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities
US7601566B2 (en) 2005-10-18 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5416881B2 (ja) * 2005-10-18 2014-02-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2180518B1 (en) * 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
GB202117193D0 (en) * 2021-11-29 2022-01-12 Spts Technologies Ltd A method of plasma etching

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JP2003209260A (ja) 2003-07-25

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