JP4401500B2 - 静電放電における寄生バイポーラ効果を低減する半導体装置および方法 - Google Patents

静電放電における寄生バイポーラ効果を低減する半導体装置および方法 Download PDF

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JP4401500B2
JP4401500B2 JP33849799A JP33849799A JP4401500B2 JP 4401500 B2 JP4401500 B2 JP 4401500B2 JP 33849799 A JP33849799 A JP 33849799A JP 33849799 A JP33849799 A JP 33849799A JP 4401500 B2 JP4401500 B2 JP 4401500B2
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current
coupled
transistor
voltage
esd
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Japanese (ja)
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JP2000174133A (ja
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ジェレミー・シー・スミス
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
    • H01L27/0277—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP33849799A 1998-11-30 1999-11-29 静電放電における寄生バイポーラ効果を低減する半導体装置および方法 Expired - Fee Related JP4401500B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/201,392 US6329692B1 (en) 1998-11-30 1998-11-30 Circuit and method for reducing parasitic bipolar effects during eletrostatic discharges
US201392 1998-11-30

Publications (2)

Publication Number Publication Date
JP2000174133A JP2000174133A (ja) 2000-06-23
JP4401500B2 true JP4401500B2 (ja) 2010-01-20

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JP33849799A Expired - Fee Related JP4401500B2 (ja) 1998-11-30 1999-11-29 静電放電における寄生バイポーラ効果を低減する半導体装置および方法

Country Status (5)

Country Link
US (3) US6329692B1 (ko)
JP (1) JP4401500B2 (ko)
KR (1) KR100717973B1 (ko)
CN (1) CN1167132C (ko)
TW (1) TW454306B (ko)

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JP2002083931A (ja) * 2000-09-08 2002-03-22 Nec Corp 半導体集積回路装置
JP2002305254A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6650103B2 (en) * 2001-05-31 2003-11-18 Analog Devices, Inc. Magnetic snapback sensor circuit and electrostatic discharge circuit using same
JP2003031669A (ja) * 2001-07-13 2003-01-31 Ricoh Co Ltd 半導体装置
DE10201056B4 (de) * 2002-01-14 2007-06-21 Infineon Technologies Ag Halbleitereinrichtung mit einem bipolaren Schutztransistor
US7042689B2 (en) * 2003-01-21 2006-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage tolerant ESD design for analog and RF applications in deep submicron CMOS technologies
US7075763B2 (en) * 2002-10-31 2006-07-11 Micron Technology, Inc. Methods, circuits, and applications using a resistor and a Schottky diode
US6900970B2 (en) * 2003-01-22 2005-05-31 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6844597B2 (en) * 2003-02-10 2005-01-18 Freescale Semiconductor, Inc. Low voltage NMOS-based electrostatic discharge clamp
US8000067B1 (en) 2003-05-15 2011-08-16 Marvell International Ltd. Method and apparatus for improving supply noise rejection
US7196887B2 (en) * 2003-05-28 2007-03-27 Texas Instruments Incorporated PMOS electrostatic discharge (ESD) protection device
JP2005093696A (ja) * 2003-09-17 2005-04-07 Matsushita Electric Ind Co Ltd 横型ｍｏｓトランジスタ
US6996786B2 (en) * 2003-09-30 2006-02-07 International Business Machines Corporation Latch-up analysis and parameter modification
US7089520B2 (en) * 2003-11-19 2006-08-08 International Business Machines Corporation Methodology for placement based on circuit function and latchup sensitivity
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7371022B2 (en) 2004-12-22 2008-05-13 Sokudo Co., Ltd. Developer endpoint detection in a track lithography system
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
TW200739872A (en) * 2006-04-04 2007-10-16 Univ Nat Chiao Tung Power line electrostatic discharge protection circuit featuring triple voltage tolerance
TW200816878A (en) * 2006-09-27 2008-04-01 Silicon Motion Inc Electrostatic discharge (ESD) protection device
US7672101B2 (en) 2007-09-10 2010-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit and method
CN101533830B (zh) * 2008-03-11 2012-05-09 义隆电子股份有限公司 高压垫的静电放电保护装置
WO2010038101A1 (en) * 2008-10-03 2010-04-08 Freescale Semiconductor, Inc. Semiconductor device and electronic device
US8693149B2 (en) * 2009-05-20 2014-04-08 Semiconductor Components Industries, Llc. Transient suppression device and method therefor
US8193585B2 (en) * 2009-10-29 2012-06-05 Freescale Semiconductor, Inc. Semiconductor device with increased snapback voltage
US20110102046A1 (en) * 2009-10-31 2011-05-05 Pankaj Kumar Interfacing between differing voltage level requirements in an integrated circuit system
US8344472B2 (en) 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
US8338872B2 (en) 2010-03-30 2012-12-25 Freescale Semiconductor, Inc. Electronic device with capcitively coupled floating buried layer
US8927391B2 (en) * 2011-05-27 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package process for applying molding compound
CN102332403A (zh) * 2011-09-20 2012-01-25 中国科学院微电子研究所 一种半导体结构及其制造方法
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base
TWI521824B (zh) * 2014-08-08 2016-02-11 朋程科技股份有限公司 靜電放電防護電路及具有此電路的電壓調節器晶片
US10332871B2 (en) * 2016-03-18 2019-06-25 Intel IP Corporation Area-efficient and robust electrostatic discharge circuit
US10840907B1 (en) 2019-11-19 2020-11-17 Honeywell International Inc. Source-coupled logic with reference controlled inputs
US11329481B2 (en) 2020-05-18 2022-05-10 Littelfuse, Inc. Current limiting circuit arrangement

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US5157573A (en) 1989-05-12 1992-10-20 Western Digital Corporation ESD protection circuit with segmented buffer transistor
US5465189A (en) 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
US5021853A (en) 1990-04-27 1991-06-04 Digital Equipment Corporation N-channel clamp for ESD protection in self-aligned silicided CMOS process
US5153529A (en) * 1991-08-30 1992-10-06 Motorola, Inc. Rail-to-rail input stage of an operational amplifier
US5225702A (en) 1991-12-05 1993-07-06 Texas Instruments Incorporated Silicon controlled rectifier structure for electrostatic discharge protection
US5440162A (en) 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5528193A (en) * 1994-11-21 1996-06-18 National Semiconductor Corporation Circuit for generating accurate voltage levels below substrate voltage
US5534792A (en) * 1995-02-15 1996-07-09 Burr-Brown Corporation Low capacitance electronically controlled active bus terminator circuit and method
US5798658A (en) * 1995-06-15 1998-08-25 Werking; Paul M. Source-coupled logic with reference controlled inputs
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US5903419A (en) 1997-09-29 1999-05-11 Motorola, Inc. Circuit for electrostatic discharge (ESD) protection
US6204715B1 (en) * 1999-02-26 2001-03-20 General Motors Corporation Signal amplifying circuit

Also Published As

Publication number Publication date
KR20000035771A (ko) 2000-06-26
JP2000174133A (ja) 2000-06-23
US6284616B1 (en) 2001-09-04
US6373104B1 (en) 2002-04-16
US6329692B1 (en) 2001-12-11
KR100717973B1 (ko) 2007-05-16
TW454306B (en) 2001-09-11
CN1167132C (zh) 2004-09-15
CN1256516A (zh) 2000-06-14

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