JP4386680B2 - 半導体素子のためのキャパシタおよびその製造方法 - Google Patents

半導体素子のためのキャパシタおよびその製造方法 Download PDF

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Publication number
JP4386680B2
JP4386680B2 JP2003180575A JP2003180575A JP4386680B2 JP 4386680 B2 JP4386680 B2 JP 4386680B2 JP 2003180575 A JP2003180575 A JP 2003180575A JP 2003180575 A JP2003180575 A JP 2003180575A JP 4386680 B2 JP4386680 B2 JP 4386680B2
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capacitor
forming
metal
capacitor electrode
film
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JP2003180575A
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Japanese (ja)
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JP2004031965A (ja
JP2004031965A5 (enExample
Inventor
スコット キャロル マイケル
ウィリアム グレゴア リチャード
ベルデン ハリス エドワード
ジー． イヴァノヴ トニー
ジェイ パリッシュ マイケル
ダブリュ． トーマス シルヴィア
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Agere Systems LLC
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Agere Systems LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2003180575A 2002-06-25 2003-06-25 半導体素子のためのキャパシタおよびその製造方法 Expired - Lifetime JP4386680B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/180,910 US6847077B2 (en) 2002-06-25 2002-06-25 Capacitor for a semiconductor device and method for fabrication therefor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009161395A Division JP2009267435A (ja) 2002-06-25 2009-07-08 半導体素子のためのキャパシタおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2004031965A JP2004031965A (ja) 2004-01-29
JP2004031965A5 JP2004031965A5 (enExample) 2006-07-27
JP4386680B2 true JP4386680B2 (ja) 2009-12-16

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ID=22662165

Family Applications (2)

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JP2003180575A Expired - Lifetime JP4386680B2 (ja) 2002-06-25 2003-06-25 半導体素子のためのキャパシタおよびその製造方法
JP2009161395A Pending JP2009267435A (ja) 2002-06-25 2009-07-08 半導体素子のためのキャパシタおよびその製造方法

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JP2009161395A Pending JP2009267435A (ja) 2002-06-25 2009-07-08 半導体素子のためのキャパシタおよびその製造方法

Country Status (5)

Country Link
US (1) US6847077B2 (enExample)
JP (2) JP4386680B2 (enExample)
KR (1) KR100803489B1 (enExample)
GB (1) GB2390223B (enExample)
TW (1) TWI279888B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009267435A (ja) * 2002-06-25 2009-11-12 Agere Systems Inc 半導体素子のためのキャパシタおよびその製造方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100422597B1 (ko) * 2001-11-27 2004-03-16 주식회사 하이닉스반도체 다마신 공정에 의해 형성된 캐패시터와 금속배선을 가지는반도체소자
US7230292B2 (en) * 2003-08-05 2007-06-12 Micron Technology, Inc. Stud electrode and process for making same
US7238566B2 (en) * 2003-10-08 2007-07-03 Taiwan Semiconductor Manufacturing Company Method of forming one-transistor memory cell and structure formed thereby
KR100641070B1 (ko) 2004-07-06 2006-10-31 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US20060027924A1 (en) * 2004-08-03 2006-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Metallization layers for crack prevention and reduced capacitance
US7138717B2 (en) * 2004-12-01 2006-11-21 International Business Machines Corporation HDP-based ILD capping layer
KR100706227B1 (ko) * 2004-12-03 2007-04-11 삼성전자주식회사 다층구조를 갖는 금속-절연체-금속 커패시터 및 그 제조방법
US20070107500A1 (en) * 2005-11-16 2007-05-17 Neha Patel Sensing moisture uptake of package polymers
KR100836757B1 (ko) * 2006-05-30 2008-06-10 삼성전자주식회사 커패시터가 구비된 반도체 장치 및 그 제조 방법
FR2914498A1 (fr) 2007-04-02 2008-10-03 St Microelectronics Sa Realisation de condensateurs mim a 3 dimensions dans le dernier niveau de metal d'un circuit integre
FR2917231B1 (fr) 2007-06-07 2009-10-02 St Microelectronics Sa Realisation de condensateurs dotes de moyens pour diminuer les contraintes du materiau metallique de son armature inferieure
US7927990B2 (en) * 2007-06-29 2011-04-19 Sandisk Corporation Forming complimentary metal features using conformal insulator layer
US7968460B2 (en) 2008-06-19 2011-06-28 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US9799562B2 (en) * 2009-08-21 2017-10-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
US8907457B2 (en) * 2010-02-08 2014-12-09 Micron Technology, Inc. Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
FR2957717B1 (fr) * 2010-03-22 2012-05-04 St Microelectronics Sa Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle
EP2711984A1 (en) * 2012-09-21 2014-03-26 Nxp B.V. Metal-insulator-metal capacitor formed within an interconnect metallisation layer of an integrated circuit and manufacturing method thereof
US9401357B2 (en) 2014-02-28 2016-07-26 Qualcomm Incorporated Directional FinFET capacitor structures
CN105097766B (zh) * 2014-05-13 2017-09-15 旺宏电子股份有限公司 具有不同深宽比的接触结构的半导体结构及其制造方法
US9412806B2 (en) 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
US9397038B1 (en) 2015-02-27 2016-07-19 Invensas Corporation Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates
EP3174094B1 (en) * 2015-11-25 2018-09-26 IMEC vzw Integrated circuit comprising a metal-insulator-metal capacitor and fabrication method thereof
US10840189B2 (en) * 2018-07-30 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit devices having raised via contacts and methods of fabricating the same
US12183779B2 (en) * 2021-08-31 2024-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method of forming the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100213189B1 (ko) 1992-06-11 1999-08-02 김광호 반도체메모리장치 및 그 제조방법
DE59510080D1 (de) * 1995-04-24 2002-04-04 Infineon Technologies Ag Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung
US5972788A (en) * 1996-05-22 1999-10-26 International Business Machines Corporation Method of making flexible interconnections with dual-metal-dual-stud structure
JPH10242147A (ja) 1997-02-27 1998-09-11 Toshiba Corp 半導体装置およびその製造方法ならびに半導体記憶装置およびその製造方法
US6309975B1 (en) 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
FR2766294B1 (fr) * 1997-07-18 2001-01-19 St Microelectronics Sa Procede de fabrication d'une capacite metal-metal au sein d'un circuit integre, et circuit integre correspondant
EP1042793A1 (de) * 1997-12-16 2000-10-11 Infineon Technologies AG Barriereschicht für kupfermetallisierung
US6165863A (en) 1998-06-22 2000-12-26 Micron Technology, Inc. Aluminum-filled self-aligned trench for stacked capacitor structure and methods
US6255217B1 (en) * 1999-01-04 2001-07-03 International Business Machines Corporation Plasma treatment to enhance inorganic dielectric adhesion to copper
JP2000208743A (ja) * 1999-01-12 2000-07-28 Lucent Technol Inc ジュアルダマシ―ンコンデンサを備えた集積回路デバイスおよびこれを製造するための関連する方法
US6346454B1 (en) * 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
JP3522144B2 (ja) * 1999-02-25 2004-04-26 富士通株式会社 容量回路および半導体集積回路装置
US6504202B1 (en) * 2000-02-02 2003-01-07 Lsi Logic Corporation Interconnect-embedded metal-insulator-metal capacitor
US6384468B1 (en) * 2000-02-07 2002-05-07 International Business Machines Corporation Capacitor and method for forming same
US6452251B1 (en) * 2000-03-31 2002-09-17 International Business Machines Corporation Damascene metal capacitor
FR2813145B1 (fr) * 2000-08-18 2002-11-29 St Microelectronics Sa Procede de fabrication d'un condensateur au sein d'un circuit integre, et circuit integre correspondant
US6524908B2 (en) * 2001-06-01 2003-02-25 International Business Machines Corporation Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
US6338999B1 (en) * 2001-06-15 2002-01-15 Silicon Integrated Systems Corp. Method for forming metal capacitors with a damascene process
KR100428789B1 (ko) * 2001-12-05 2004-04-28 삼성전자주식회사 금속/절연막/금속 캐퍼시터 구조를 가지는 반도체 장치 및그 형성 방법
US6847077B2 (en) * 2002-06-25 2005-01-25 Agere Systems, Inc. Capacitor for a semiconductor device and method for fabrication therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009267435A (ja) * 2002-06-25 2009-11-12 Agere Systems Inc 半導体素子のためのキャパシタおよびその製造方法

Also Published As

Publication number Publication date
GB0308959D0 (en) 2003-05-28
JP2009267435A (ja) 2009-11-12
GB2390223A (en) 2003-12-31
JP2004031965A (ja) 2004-01-29
TW200405514A (en) 2004-04-01
TWI279888B (en) 2007-04-21
US6847077B2 (en) 2005-01-25
KR20040002674A (ko) 2004-01-07
US20030234416A1 (en) 2003-12-25
GB2390223B (en) 2005-11-02
KR100803489B1 (ko) 2008-02-14

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