JP4383866B2 - パワー電子ユニット - Google Patents
パワー電子ユニット Download PDFInfo
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- JP4383866B2 JP4383866B2 JP2003529525A JP2003529525A JP4383866B2 JP 4383866 B2 JP4383866 B2 JP 4383866B2 JP 2003529525 A JP2003529525 A JP 2003529525A JP 2003529525 A JP2003529525 A JP 2003529525A JP 4383866 B2 JP4383866 B2 JP 4383866B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Power Conversion In General (AREA)
Description
Claims (16)
- 自動車内の制御機器用のパワー電子ユニットであって、
セラミック構成部分から成る担体要素(1)を有しており、当該担体要素(1)上に、同じように担体要素(1)上に配置された回路の電気的パワー構成素子(7)と制御構成素子を電気的に接続するための導体路(5)が配置されており、
前記担体要素(1)は、担体要素(1)を収容しているケーシングの熱伝導性ケーシング構成部分(3)と熱伝導性に接続されており、
前記導体路(5)は厚膜導体路として被着されており、ろう付け(6)によって前記電気的パワー構成素子(7)と導電性に接続されており、前記担体要素(1)は前記ケーシング構成部分(3)に接して配置されている形式のものにおいて、
前記担体要素(1)は多孔性のセラミック構成部分から成り、当該多孔性セラミック構成部分の孔は金属または金属性物質によって充填されており、当該多孔性セラミック構成部分は厚膜誘電体(4)によって覆われており、
前記導体路(5)はLTTC膜上にプリントされて前記厚膜誘電体(4)上に被着され、前記厚膜誘電体(4)および、前記導体路(5)がプリントされた前記LTTC膜に、前記担体要素(1)上への被着後に共通の熱プロセスにおいて熱が加えられる、
ことを特徴とするパワー電子ユニット。 - 前記担体要素(1)はシリコンカーバイドマトリックスから成り、当該シリコンカーバイドマトリックスの孔はアルミニウムによって充填されている、請求項1記載のパワー電子ユニット。
- 前記担体要素(1)は、0. 5mmより厚い担体プレート(1)である、請求項1または2記載のパワー電子ユニット。
- 前記担体プレート(1)は、0. 5mmから4. 0mmの間の厚さを有している、請求項3記載のパワー電子ユニット。
- 前記厚膜誘電体(4)はガラス層(4)である、請求項1から4までのいずれか1項記載のパワー電子ユニット。
- 前記ガラス層(4)は担体要素(1)上にプリントされ、前記熱プロセスによって担体要素(1)に結合される、請求項5記載のパワー電子ユニット。
- 前記厚膜誘電体(4)はプラズマ溶射プロセスにおいて被着されたAl2O3層である、請求項1から4までのいずれか1項記載のパワー電子ユニット。
- 前記厚膜誘電体(4)は、5μmから40μmの間の厚さを有している、請求項5から7までのいずれか1項記載のパワー電子ユニット。
- 前記LTTC膜は0. 1mmの厚さを有している、請求項1から8までのいずれか1項記載のパワー電子ユニット。
- 前記導体路(5)は、電気的パワー構成素子(7)および/または制御構成素子を接続するための接続パッド(10)を有している、請求項1から9までのいずれか1項記載のパワー電子ユニット。
- 前記担体要素(1)は、平面的に前記ケーシング構成部分(3)に接して配置されている、請求項1から10までのいずれか1項記載のパワー電子ユニット。
- 前記担体要素(1)は、固定要素(2)によって前記ケーシング構成部分(3)に配置されている、請求項1から11までのいずれか1項記載のパワー電子ユニット。
- 前記固定要素(2)は、ねじであることを特徴とする、請求項12記載のパワー電子ユニット。
- 前記担体要素(1)とケーシング構成部分(3)の間に熱伝導ペースト層(8)が配置されている、請求項1から13までのいずれか1項記載のパワー電子ユニット。
- 前記ケーシング構成部分(3)はケーシングの外壁(3)である、請求項1から14までのいずれか1項記載のパワー電子ユニット。
- 前記ケーシング構成部分(3)は、冷却剤が加えられたケーシング壁部である、請求項1から15までのいずれか1項記載のパワー電子ユニット。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10142614A DE10142614A1 (de) | 2001-08-31 | 2001-08-31 | Leistungselektronikeinheit |
PCT/DE2002/003177 WO2003026008A2 (de) | 2001-08-31 | 2002-08-29 | Leistungselektronikeinheit |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005503038A JP2005503038A (ja) | 2005-01-27 |
JP4383866B2 true JP4383866B2 (ja) | 2009-12-16 |
Family
ID=7697196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003529525A Expired - Fee Related JP4383866B2 (ja) | 2001-08-31 | 2002-08-29 | パワー電子ユニット |
Country Status (5)
Country | Link |
---|---|
US (1) | US6846987B2 (ja) |
EP (1) | EP1421617B1 (ja) |
JP (1) | JP4383866B2 (ja) |
DE (2) | DE10142614A1 (ja) |
WO (1) | WO2003026008A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4014528B2 (ja) * | 2003-03-28 | 2007-11-28 | 日本碍子株式会社 | ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール |
JP2005197688A (ja) * | 2003-12-29 | 2005-07-21 | Siemens Ag | 電子ユニット |
JP4378334B2 (ja) * | 2005-09-09 | 2009-12-02 | 日本碍子株式会社 | ヒートスプレッダモジュール及びその製造方法 |
US8861214B1 (en) * | 2006-11-22 | 2014-10-14 | Marvell International Ltd. | High resistivity substrate for integrated passive device (IPD) applications |
DE102011080299B4 (de) * | 2011-08-02 | 2016-02-11 | Infineon Technologies Ag | Verfahren, mit dem ein Schaltungsträger hergestellt wird, und Verfahren zur Herstellung einer Halbleiteranordnung |
DE102013104949B3 (de) * | 2013-05-14 | 2014-04-24 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung und Anordnung hiermit |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3247985C2 (de) | 1982-12-24 | 1992-04-16 | W.C. Heraeus Gmbh, 6450 Hanau | Keramischer Träger |
DE3643288A1 (de) * | 1986-12-18 | 1988-06-30 | Semikron Elektronik Gmbh | Halbleiterbaueinheit |
DE3831148C1 (ja) | 1988-09-13 | 1990-03-29 | Robert Bosch Gmbh, 7000 Stuttgart, De | |
DE3837975A1 (de) * | 1988-11-09 | 1990-05-10 | Telefunken Electronic Gmbh | Elektronisches steuergeraet |
DE8908678U1 (ja) * | 1989-07-17 | 1990-11-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen, De | |
DE8914493U1 (ja) * | 1989-12-08 | 1990-05-17 | Siemens Ag, 1000 Berlin Und 8000 Muenchen, De | |
DE4100145A1 (de) * | 1990-01-10 | 1991-07-11 | Murata Manufacturing Co | Substrat fuer die montage von integrierten schaltkreisen und es umfassendes elektronisches bauteil |
DE4330975C2 (de) * | 1993-09-13 | 2001-10-25 | Bosch Gmbh Robert | Verfahren zum Aufbringen eines Leistungsbauelements auf einer Leiterplatte |
AT402135B (de) * | 1994-03-30 | 1997-02-25 | Electrovac | Schaltungsträger |
US5981085A (en) * | 1996-03-21 | 1999-11-09 | The Furukawa Electric Co., Inc. | Composite substrate for heat-generating semiconductor device and semiconductor apparatus using the same |
DE19625756A1 (de) * | 1996-06-27 | 1998-01-02 | Bosch Gmbh Robert | Modul für ein elektrisches Gerät |
JP3007868B2 (ja) | 1997-03-11 | 2000-02-07 | マツダ株式会社 | 金属多孔体および軽合金複合部材並びにこれらの製造方法 |
US6245442B1 (en) * | 1997-05-28 | 2001-06-12 | Kabushiki Kaisha Toyota Chuo | Metal matrix composite casting and manufacturing method thereof |
DE29714730U1 (de) * | 1997-08-20 | 1997-10-23 | Baxmann Frank | Kühlkörper, insbesondere für elektronische Bauelemente |
DE19740330A1 (de) | 1997-09-13 | 1999-03-25 | Bosch Gmbh Robert | Trägerplatte für Mikrohybridschaltungen |
DE19807718C2 (de) * | 1998-02-24 | 2000-12-07 | Lear Automotive Electronics Gm | Elektronikbaugruppe |
JP2001148451A (ja) * | 1999-03-24 | 2001-05-29 | Mitsubishi Materials Corp | パワーモジュール用基板 |
-
2001
- 2001-08-31 DE DE10142614A patent/DE10142614A1/de not_active Ceased
-
2002
- 2002-08-29 US US10/487,769 patent/US6846987B2/en not_active Expired - Lifetime
- 2002-08-29 EP EP02798677A patent/EP1421617B1/de not_active Expired - Fee Related
- 2002-08-29 JP JP2003529525A patent/JP4383866B2/ja not_active Expired - Fee Related
- 2002-08-29 DE DE50204892T patent/DE50204892D1/de not_active Expired - Lifetime
- 2002-08-29 WO PCT/DE2002/003177 patent/WO2003026008A2/de active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2003026008A3 (de) | 2003-08-21 |
JP2005503038A (ja) | 2005-01-27 |
US20040206534A1 (en) | 2004-10-21 |
EP1421617A2 (de) | 2004-05-26 |
DE50204892D1 (de) | 2005-12-15 |
DE10142614A1 (de) | 2003-04-03 |
US6846987B2 (en) | 2005-01-25 |
EP1421617B1 (de) | 2005-11-09 |
WO2003026008A2 (de) | 2003-03-27 |
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