JP4383866B2 - Power electronic unit - Google Patents

Power electronic unit Download PDF

Info

Publication number
JP4383866B2
JP4383866B2 JP2003529525A JP2003529525A JP4383866B2 JP 4383866 B2 JP4383866 B2 JP 4383866B2 JP 2003529525 A JP2003529525 A JP 2003529525A JP 2003529525 A JP2003529525 A JP 2003529525A JP 4383866 B2 JP4383866 B2 JP 4383866B2
Authority
JP
Japan
Prior art keywords
electronic unit
power electronic
carrier element
component
unit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003529525A
Other languages
Japanese (ja)
Other versions
JP2005503038A (en
Inventor
ルッケ オラフ
ティーツェル ベルント
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JP2005503038A publication Critical patent/JP2005503038A/en
Application granted granted Critical
Publication of JP4383866B2 publication Critical patent/JP4383866B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Power Conversion In General (AREA)

Description

本発明は殊に自動車内の制御機器に対するパワー電子ユニットに関する。ここでこのパワー電子ユニットは担体要素を有しており、この担体要素上に、同じように担体要素上に配置された、回路の電気的パワー構成素子および制御構成素子を電気的に接続するための導体路が配置されており、ここでこの担体要素は担体要素を収容しているケーシングの熱伝導性ケーシング構成部分に熱伝導性に接続されている。   The invention relates in particular to power electronic units for control equipment in motor vehicles. The power electronic unit here has a carrier element for electrically connecting the electrical power component and the control component of the circuit, which are likewise arranged on the carrier element, on the carrier element. Are arranged, wherein the carrier element is thermally conductively connected to the thermally conductive casing component of the casing containing the carrier element.

パワー電子ユニットは、放出されなければならいような熱を電気的パワー構成素子が生成してしまうという欠点を有している。このため、担体要素を絶縁性の導体プレートとして構成し、この絶縁性導体プレート上に銅導体路を例えば積層によって被着させ、電気的パワー構成素子並びに場合によっては制御構成素子もろう付けによってこの銅導体路と接続させることが公知である。熱伝導性接着剤によってこの導体プレートはケーシング構成部分上に接着される。これによってこのケーシング構成部分はヒートスプリッダとしても用いられ、さらに熱を周囲に放出する。   The power electronic unit has the disadvantage that the electrical power component generates heat that must be released. For this purpose, the carrier element is configured as an insulating conductor plate, a copper conductor track is deposited on the insulating conductor plate, for example by lamination, and the electrical power component and possibly also the control component are brazed. It is known to connect with copper conductor tracks. The conductor plate is bonded onto the casing component by a thermally conductive adhesive. As a result, this casing component is also used as a heat spreader and further releases heat to the surroundings.

この場合に以下の欠点が生じる。すなわち電気的パワー構成素子とケーシング構成部分との間の熱抵抗が比較的大きく、殊に導体プレート上の電気的パワー構成素子の密度が比較的高い場合、熱放出が不十分であるという欠点である。   In this case, the following drawbacks occur. That is, the thermal resistance between the electrical power component and the casing component is relatively large, especially when the density of the electrical power component on the conductor plate is relatively high, resulting in insufficient heat dissipation. is there.

従って本発明の課題は、冒頭に記載した形式のパワー電子ユニットを改善して、電気的パワー構成素子の電気的絶縁にもかかわらず簡単な構成で、電気的パワー構成素子とケーシング構成部分との間の熱抵抗がより少ないパワー電子ユニットを提供することである。   The object of the present invention is therefore to improve a power electronic unit of the type described at the outset, with a simple construction, despite the electrical insulation of the electrical power component, between the electrical power component and the casing component. It is to provide a power electronic unit with less thermal resistance between.

上述の課題は、本発明と相応に、担体要素が多孔性のセラミック構成部分から成り、この多孔性セラミック構成部分の孔が金属または金属性物質で充填され、多孔性セラミック構成部分が厚膜誘電体によって覆われ、厚膜誘電体上に厚膜導体路である導体路およびパワー構成素子が被着され、この導体路はろう付けによって電気的パワー構成素子と導電性接続され、担体要素はケーシング構成部分に接して配置される、ことによって解決される。   In accordance with the present invention, the above problem is that the carrier element comprises a porous ceramic component, the pores of which are filled with a metal or a metallic material, and the porous ceramic component is a thick film dielectric. A conductor track and a power component, which is a thick film conductor track, are deposited on the thick film dielectric, the conductor track being conductively connected to the electrical power component by brazing, and the carrier element being a casing It is solved by being placed in contact with the component.

このように構成された金属性担体要素は以下の利点を有している。すなわち非常に良好な熱伝導度によって既にヒートスプリッダとして用いられ、さらに非常に直接的に、電気的パワー構成素子によって生成された熱を大きな面へ分配するという利点を有している。しかし同時に僅かな膨張係数によって、温度変化要求が高い場合に（殊に自動車内のパワー電子ユニットは温度変化要求の影響を受ける）、電気的パワー構成素子が導体路から裂かれることが阻止される。担体要素の既に大きな面積によって、通常はアルミニウムから成るケーシング構成部分への良好な熱放出が行われ、ケーシング構成部分から周辺への熱放出が行われる。   The metallic carrier element thus constructed has the following advantages. That is, it has the advantage that it is already used as a heat spreader with very good thermal conductivity, and very directly distributes the heat generated by the electrical power component to a large surface. But at the same time, a small coefficient of expansion prevents the electrical power component from being torn from the conductor track, especially when the temperature change demand is high (especially the power electronic unit in the car is affected by the temperature change demand). . The already large area of the carrier element provides a good heat release to the casing component, usually made of aluminum, and the heat release from the casing component to the surroundings.

電気的絶縁は厚膜誘電体を介して行われる。この厚膜誘電体は非常に薄く構成されており、電気的パワー構成素子から担体要素への良好な熱移動に僅かにしか影響を与えない。しかし膨張が整合された（dehnungsangepassten）層システムによって、上部に被着された厚膜導体路の確実な接続が保証される。   Electrical insulation is performed via a thick film dielectric. This thick film dielectric is configured to be very thin and only slightly affects the good heat transfer from the electrical power component to the carrier element. However, a dehnungsangepassten layer system ensures a secure connection of thick film conductors deposited on top.

良好な熱導出によって、より小さな、従ってより安価で必要とする構造空間がより少ない電気的パワー構成素子が用いられる。   With good heat extraction, electrical power components are used that are smaller, and therefore less expensive and require less structural space.

担体要素の有利な構成では、担体要素はシリコンカーバイドマトリックスから成り、シリコンカーバイドマトリックスの孔にアルミニウムが充填される、または担体要素は焼結された銅マトリックスから成り、この銅マトリックスの孔にモリブデンが充填される、または担体要素は焼結された銅マトリックスから成り、この銅マトリックスの孔にタングステンが充填される。これらの構成は、良好な熱伝導度の利点を次のような膨張係数と結び付ける。すなわち銅またはアルミニウムの膨張係数より格段に低く、電気的パワー構成素子の膨張係数とほぼ同じ膨張係数である。   In an advantageous configuration of the carrier element, the carrier element consists of a silicon carbide matrix, the pores of the silicon carbide matrix are filled with aluminum, or the carrier element consists of a sintered copper matrix, and the pores of this copper matrix are molybdenum. The filled or carrier element consists of a sintered copper matrix, the pores of which are filled with tungsten. These configurations combine the benefits of good thermal conductivity with the following expansion coefficients: That is, it is much lower than the coefficient of expansion of copper or aluminum, and is approximately the same as the coefficient of expansion of the electrical power component.

担体要素が０. ５ｍｍより厚い、殊に約０. ５ｍｍ〜４. ０ｍｍの厚さである担体プレートの場合、回路および電気的パワー電子構成素子と別個に製造可能な構成部分を、安定した、破損しにくい構成部分として容易にケーシング構成部分に配置することができる。   In the case of a carrier plate whose carrier element is thicker than 0.5 mm, in particular about 0.5 mm to 4.0 mm thick, the components that can be manufactured separately from the circuit and electrical power electronic components are stable, It can be easily placed on the casing component as a component that is not easily damaged.

厚膜誘電体はガラス層であり得る。ここでこのガラス層は容易に担体要素上にプリントされ、熱プロセスよって担体要素と結合される。   The thick film dielectric can be a glass layer. Here, this glass layer is easily printed on the carrier element and bonded to the carrier element by a thermal process.

厚膜誘電体はプラズマ層でもよい。このプラズマ層は有利にはプラズマ溶射プロセスで被着されたＡｌ２Ｏ３層である。この場合に厚膜誘電体は、約５μｍ〜４０μｍの厚さであり、従って熱の通過は実質的に影響されない。 The thick film dielectric may be a plasma layer. This plasma layer is preferably an Al 2 O 3 layer deposited by a plasma spraying process. In this case, the thick film dielectric is about 5 to 40 μm thick, so that the passage of heat is substantially unaffected.

しかしはじめにプラズマ層を担体要素上に被着させ、プラズマ層上にガラス層を被着させることも可能である。これによって電気的な絶縁が特に確実になり、プラズマ層はガラス層の接着仲介物として用いられる。   However, it is also possible to first deposit a plasma layer on the carrier element and then deposit a glass layer on the plasma layer. This particularly ensures electrical insulation, and the plasma layer is used as an adhesion mediator for the glass layer.

製造プロセスを簡単にするために、導体路をＬＴＴＣ膜（low temperature fired ceramic）上にプリントして厚膜誘電体上に被着させ、熱プロセスによって厚膜誘電体に結合させることができる。   To simplify the manufacturing process, conductor tracks can be printed on an LTCC film (low temperature fired ceramic) and deposited on the thick film dielectric and bonded to the thick film dielectric by a thermal process.

この場合にＬＴＴＣ膜の厚さは約０. １ｍｍである。厚膜誘電体および、導体路が設けられたＬＴＴＣ膜が担体要素上に被着された後に、共通の熱プロセスにおいて熱が加えられる場合に製造コストは特に低下する。なぜならこれによって熱プロセスの数が低減されるからである。   In this case, the thickness of the LTCC film is about 0.1 mm. Manufacturing costs are particularly reduced when heat is applied in a common thermal process after the thick film dielectric and the LTCC film provided with conductor tracks are deposited on the carrier element. This reduces the number of thermal processes.

電気的パワー構成素子を確実に接続するために、電気的パワー構成素子および／または制御構成素子を接続するための接続パッドを導体路が有しているのは有利である。   In order to securely connect the electrical power component, it is advantageous for the conductor track to have a connection pad for connecting the electrical power component and / or the control component.

担体要素が平面的にケーシング構成部分に接して配置される場合、電気的パワー構成素子によって生成された熱を特に良好に放出することができる。   The heat generated by the electrical power component can be released particularly well if the carrier element is arranged in plan contact with the casing component.

担体要素を固定要素を用いてケーシング構成部分に配置することによって、担体要素をケーシング構成部分に確実かつ容易に配置することができる。この場合に担体要素はねじを用いてケーシング構成部分に容易に固定され、接続が任意に固定的に形成される。   By arranging the carrier element in the casing component using a fixing element, the carrier element can be reliably and easily arranged in the casing component. In this case, the carrier element is easily fixed to the casing component using screws, and the connection is arbitrarily fixedly formed.

付加的に担体要素とケーシング構成部分の間に、熱伝導ペーストの層を配置することができる。周辺に殊に良好に熱を放出するために、このケーシング構成部分をケーシングの外壁とすることができる。   In addition, a layer of thermally conductive paste can be arranged between the carrier element and the casing component. This casing component can be the outer wall of the casing in order to dissipate heat particularly well around it.

電気的パワー構成素子によって生成された、放出されるべき熱が殊に高い場合、ケーシング構成部分を、冷却剤が加えられたケーシング壁部とすることができる。   If the heat generated by the electrical power component is particularly high, the casing component can be a casing wall with added coolant.

本発明の実施例を図示し、以下でより詳細に説明する。図はパワー電子ユニットの横断面図である。   Examples of the invention are illustrated and described in more detail below. The figure is a cross-sectional view of the power electronic unit.

図示されたパワー電子ユニットは担体プレート１を有している。ここでこの担体プレートは、シリコンカーバイドマトリックスから成る。シリコンカーバイドマトリックスの孔にはアルミニウムが充填されている（Ａｌ−ＳｉＣ）。厚さ１. ５ｍｍのこの担体プレート１は、アルミニウムから成るケーシングの外壁３上にねじによって平面的に載置されて固定されている。この場合には担体プレート１とケーシング外壁３との間に、薄い熱伝導ペースト層８が配置されている。   The illustrated power electronic unit has a carrier plate 1. The carrier plate here consists of a silicon carbide matrix. The pores of the silicon carbide matrix are filled with aluminum (Al—SiC). The carrier plate 1 having a thickness of 1.5 mm is mounted on the outer wall 3 of a casing made of aluminum in a plane and fixed by screws. In this case, a thin heat conductive paste layer 8 is arranged between the carrier plate 1 and the casing outer wall 3.

外壁３の方を向いていない面上で、担体プレート１上にガラス層４（Ａｌ２Ｏ３）がプリントされている。 A glass layer 4 (Al 2 O 3 ) is printed on the carrier plate 1 on the side not facing the outer wall 3.

その上にはＬＴＴＣ薄膜が被着される。このＬＴＴＣ薄膜上には回路の導体路５のパターンが厚膜技術を用いてプリントされている。   An LTCC thin film is deposited thereon. On the LTCC thin film, the pattern of the conductor path 5 of the circuit is printed using a thick film technique.

後続の熱プロセスにおいて、ガラス層４と導体路５は担体プレート１と固定的に接続される。   In the subsequent thermal process, the glass layer 4 and the conductor track 5 are fixedly connected to the carrier plate 1.

導体路５の隣で、ガラス層４上に電気的パワー構成素子７（パワー半導体素子）が被着され、このパワー構成素子７の接続部９は、軟ろう６を用いたろう付けによって、導体路５の接続パッド１０と導電性に接続される。   Next to the conductor path 5, an electrical power component 7 (power semiconductor element) is deposited on the glass layer 4, and the connection 9 of the power component 7 is connected to the conductor path by brazing using a soft solder 6. 5 connection pads 10 are conductively connected.

パワー電子ユニットの横断面図である。It is a cross-sectional view of a power electronic unit.

Claims (16)

自動車内の制御機器用のパワー電子ユニットであって、
セラミック構成部分から成る担体要素（１）を有しており、当該担体要素（１）上に、同じように担体要素（１）上に配置された回路の電気的パワー構成素子（７）と制御構成素子を電気的に接続するための導体路（５）が配置されており、
前記担体要素（１）は、担体要素（１）を収容しているケーシングの熱伝導性ケーシング構成部分（３）と熱伝導性に接続されており、
前記導体路（５）は厚膜導体路として被着されており、ろう付け（６）によって前記電気的パワー構成素子（７）と導電性に接続されており、前記担体要素（１）は前記ケーシング構成部分（３）に接して配置されている形式のものにおいて、
前記担体要素（１）は多孔性のセラミック構成部分から成り、当該多孔性セラミック構成部分の孔は金属または金属性物質によって充填されており、当該多孔性セラミック構成部分は厚膜誘電体（４）によって覆われており、
前記導体路（５）はＬＴＴＣ膜上にプリントされて前記厚膜誘電体（４）上に被着され、前記厚膜誘電体（４）および、前記導体路（５）がプリントされた前記ＬＴＴＣ膜に、前記担体要素（１）上への被着後に共通の熱プロセスにおいて熱が加えられる、
ことを特徴とするパワー電子ユニット。A power electronic unit for automatic vehicle control device,
A carrier element (1) comprising a ceramic component, on which the electrical power component (7) of the circuit and the control are likewise arranged on the carrier element (1) Conductor paths (5) for electrically connecting the components are arranged,
The carrier element (1) is connected in thermal conductivity with the thermally conductive casing component (3) of the casing containing the carrier element (1);
The conductor track (5) is deposited as a thick film conductor track and is conductively connected to the electrical power component (7) by brazing (6), the carrier element (1) being In the type arranged in contact with the casing component (3),
The carrier element (1) is composed of a porous ceramic component, the pores of the porous ceramic component being filled with a metal or a metallic material, the porous ceramic component being a thick film dielectric (4) Covered by
The conductor track (5) is printed on an LTCC film and deposited on the thick film dielectric (4), and the LTCC on which the thick film dielectric (4) and the conductor path (5) are printed. Heat is applied to the membrane in a common thermal process after deposition on the carrier element (1),
Power electronic unit characterized by that. 前記担体要素（１）はシリコンカーバイドマトリックスから成り、当該シリコンカーバイドマトリックスの孔はアルミニウムによって充填されている、請求項１記載のパワー電子ユニット。  2. The power electronic unit according to claim 1, wherein the carrier element (1) consists of a silicon carbide matrix, the pores of the silicon carbide matrix being filled with aluminum. 前記担体要素（１）は、０. ５ｍｍより厚い担体プレート（１）である、請求項１または２記載のパワー電子ユニット。  The power electronic unit according to claim 1 or 2, wherein the carrier element (1) is a carrier plate (1) thicker than 0.5 mm. 前記担体プレート（１）は、０. ５ｍｍから４. ０ｍｍの間の厚さを有している、請求項３記載のパワー電子ユニット。  4. The power electronic unit according to claim 3, wherein the carrier plate (1) has a thickness between 0.5 mm and 4.0 mm. 前記厚膜誘電体（４）はガラス層（４）である、請求項１から４までのいずれか１項記載のパワー電子ユニット。  The power electronic unit according to any one of claims 1 to 4, wherein the thick film dielectric (4) is a glass layer (4). 前記ガラス層（４）は担体要素（１）上にプリントされ、前記熱プロセスによって担体要素（１）に結合される、請求項５記載のパワー電子ユニット。  6. The power electronic unit according to claim 5, wherein the glass layer (4) is printed on a carrier element (1) and bonded to the carrier element (1) by the thermal process. 前記厚膜誘電体（４）はプラズマ溶射プロセスにおいて被着されたＡｌ２Ｏ３層である、請求項１から４までのいずれか１項記載のパワー電子ユニット。5. The power electronic unit according to claim 1, wherein the thick film dielectric is an Al 2 O 3 layer deposited in a plasma spray process. 前記厚膜誘電体（４）は、５μｍから４０μｍの間の厚さを有している、請求項５から７までのいずれか１項記載のパワー電子ユニット。  8. The power electronic unit according to claim 5, wherein the thick film dielectric has a thickness between 5 μm and 40 μm. 9. 前記ＬＴＴＣ膜は０. １ｍｍの厚さを有している、請求項１から８までのいずれか１項記載のパワー電子ユニット。  The power electronic unit according to any one of claims 1 to 8, wherein the LTCC film has a thickness of 0.1 mm. 前記導体路（５）は、電気的パワー構成素子（７）および／または制御構成素子を接続するための接続パッド（１０）を有している、請求項１から９までのいずれか１項記載のパワー電子ユニット。  10. The conductor path (5) according to any one of the preceding claims, comprising a connection pad (10) for connecting an electrical power component (7) and / or a control component. Power electronic unit. 前記担体要素（１）は、平面的に前記ケーシング構成部分（３）に接して配置されている、請求項１から１０までのいずれか１項記載のパワー電子ユニット。  11. The power electronic unit according to claim 1, wherein the carrier element (1) is arranged in plan contact with the casing component (3). 前記担体要素（１）は、固定要素（２）によって前記ケーシング構成部分（３）に配置されている、請求項１から１１までのいずれか１項記載のパワー電子ユニット。  12. The power electronic unit according to claim 1, wherein the carrier element (1) is arranged on the casing component (3) by a fixing element (2). 前記固定要素（２）は、ねじであることを特徴とする、請求項１２記載のパワー電子ユニット。13. The power electronic unit according to claim 12, characterized in that the fixing element (2) is a screw. 前記担体要素（１）とケーシング構成部分（３）の間に熱伝導ペースト層（８）が配置されている、請求項１から１３までのいずれか１項記載のパワー電子ユニット。  14. The power electronic unit according to claim 1, wherein a heat conductive paste layer (8) is arranged between the carrier element (1) and the casing component (3). 前記ケーシング構成部分（３）はケーシングの外壁（３）である、請求項１から１４までのいずれか１項記載のパワー電子ユニット。  15. The power electronic unit according to claim 1, wherein the casing component (3) is an outer wall (3) of the casing. 前記ケーシング構成部分（３）は、冷却剤が加えられたケーシング壁部である、請求項１から１５までのいずれか１項記載のパワー電子ユニット。  The power electronic unit according to any one of claims 1 to 15, wherein the casing component (3) is a casing wall to which a coolant is added.
JP2003529525A 2001-08-31 2002-08-29 Power electronic unit Expired - Fee Related JP4383866B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10142614A DE10142614A1 (en) 2001-08-31 2001-08-31 Power electronics unit
PCT/DE2002/003177 WO2003026008A2 (en) 2001-08-31 2002-08-29 Power electronics component

Publications (2)

Publication Number Publication Date
JP2005503038A JP2005503038A (en) 2005-01-27
JP4383866B2 true JP4383866B2 (en) 2009-12-16

Family

ID=7697196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003529525A Expired - Fee Related JP4383866B2 (en) 2001-08-31 2002-08-29 Power electronic unit

Country Status (5)

Country Link
US (1) US6846987B2 (en)
EP (1) EP1421617B1 (en)
JP (1) JP4383866B2 (en)
DE (2) DE10142614A1 (en)
WO (1) WO2003026008A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4014528B2 (en) * 2003-03-28 2007-11-28 日本碍子株式会社 Heat spreader module manufacturing method and heat spreader module
JP2005197688A (en) * 2003-12-29 2005-07-21 Siemens Ag Electronic unit
JP4378334B2 (en) * 2005-09-09 2009-12-02 日本碍子株式会社 Heat spreader module and manufacturing method thereof
US8861214B1 (en) * 2006-11-22 2014-10-14 Marvell International Ltd. High resistivity substrate for integrated passive device (IPD) applications
DE102011080299B4 (en) * 2011-08-02 2016-02-11 Infineon Technologies Ag Method of manufacturing a circuit carrier, and method of manufacturing a semiconductor device
DE102013104949B3 (en) * 2013-05-14 2014-04-24 Semikron Elektronik Gmbh & Co. Kg Power electronic switching device and arrangement hereby

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3247985C2 (en) 1982-12-24 1992-04-16 W.C. Heraeus Gmbh, 6450 Hanau Ceramic carrier
DE3643288A1 (en) * 1986-12-18 1988-06-30 Semikron Elektronik Gmbh Semiconductor assembly
DE3831148C1 (en) * 1988-09-13 1990-03-29 Robert Bosch Gmbh, 7000 Stuttgart, De
DE3837975A1 (en) 1988-11-09 1990-05-10 Telefunken Electronic Gmbh ELECTRONIC CONTROL UNIT
DE8908678U1 (en) * 1989-07-17 1990-11-15 Siemens AG, 1000 Berlin und 8000 München Power module
DE8914493U1 (en) * 1989-12-08 1990-05-17 Siemens AG, 1000 Berlin und 8000 München Power module
DE4100145A1 (en) * 1990-01-10 1991-07-11 Murata Manufacturing Co Integrated circuit assembly substrate - has metal-ceramic composite material, with metal filling holes in ceramic plate
DE4330975C2 (en) * 1993-09-13 2001-10-25 Bosch Gmbh Robert Method for applying a power component to a printed circuit board
AT402135B (en) * 1994-03-30 1997-02-25 Electrovac CIRCUIT BOARD
US5981085A (en) * 1996-03-21 1999-11-09 The Furukawa Electric Co., Inc. Composite substrate for heat-generating semiconductor device and semiconductor apparatus using the same
DE19625756A1 (en) * 1996-06-27 1998-01-02 Bosch Gmbh Robert Module for an electrical device
JP3007868B2 (en) * 1997-03-11 2000-02-07 マツダ株式会社 Porous metal body, light alloy composite member, and production method thereof
US6245442B1 (en) * 1997-05-28 2001-06-12 Kabushiki Kaisha Toyota Chuo Metal matrix composite casting and manufacturing method thereof
DE29714730U1 (en) * 1997-08-20 1997-10-23 Baxmann, Frank, 40667 Meerbusch Heatsinks, in particular for electronic components
DE19740330A1 (en) 1997-09-13 1999-03-25 Bosch Gmbh Robert Ceramic carrier plate for microhybrid circuits
DE19807718C2 (en) * 1998-02-24 2000-12-07 Lear Automotive Electronics Gm Electronics assembly
JP2001148451A (en) * 1999-03-24 2001-05-29 Mitsubishi Materials Corp Power module board

Also Published As

Publication number Publication date
WO2003026008A2 (en) 2003-03-27
US6846987B2 (en) 2005-01-25
DE10142614A1 (en) 2003-04-03
US20040206534A1 (en) 2004-10-21
WO2003026008A3 (en) 2003-08-21
DE50204892D1 (en) 2005-12-15
EP1421617A2 (en) 2004-05-26
JP2005503038A (en) 2005-01-27
EP1421617B1 (en) 2005-11-09

Similar Documents

Publication Publication Date Title
RU2750688C2 (en) Method for manufacture of an electronic power module by means of additive technology and corresponding substrate and module
US4556899A (en) Insulated type semiconductor devices
RU2185042C2 (en) Thermoelectric module with improved heat- transfer apparatus and its manufacturing process
JPH0758257A (en) Electronic circuit assembly having improved heat sink capability
KR101519925B1 (en) Component having a ceramic base with a metalized surface
US20170011991A1 (en) Assembly comprising an element that is capable of transmitting heat, a film of a polymer that is a good thermal conductor and electrical insulator, a sintered joint and a radiator and manufacturing method
JP2003303932A (en) Cooling device and electrical device provided with the same
JP4383866B2 (en) Power electronic unit
JP2004022973A (en) Ceramic circuit board and semiconductor module
JP2010516051A (en) Electronic component module and method of manufacturing electronic component module
JP2015517743A (en) Surface mountable semiconductor devices
JP4532110B2 (en) Power electronic unit
JPH07283499A (en) Compound board for electronic parts
JPS6017776Y2 (en) temperature fuse
US20190056186A1 (en) Cooling device and method for producing the cooling device
JP2001135789A (en) Stacked ceramic substrata and power module substrate using the same
EP3457434A1 (en) Semiconductor substrate for a power semiconductor module arrangement and method for producing the same
GB2165704A (en) Heat dissipation for electronic components
JP2687604B2 (en) Method of manufacturing printed circuit board
JP2515671Y2 (en) Package for storing semiconductor devices
JP4721533B2 (en) Ceramic circuit board
JP2506270B2 (en) High thermal conductivity circuit board and high thermal conductivity envelope
JPH0610695Y2 (en) Package for storing semiconductor devices
JP2002076213A (en) Semiconductor device module
JPH1117047A (en) Substrate for mounting electronic component

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050511

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080528

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080828

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20080904

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20080929

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081006

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20081028

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081105

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090227

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090526

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090602

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090727

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090826

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090924

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121002

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4383866

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121002

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121002

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121002

Year of fee payment: 3

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131002

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees