JP4381694B2 - 試料の表面処理方法 - Google Patents

試料の表面処理方法 Download PDF

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Publication number
JP4381694B2
JP4381694B2 JP2003046972A JP2003046972A JP4381694B2 JP 4381694 B2 JP4381694 B2 JP 4381694B2 JP 2003046972 A JP2003046972 A JP 2003046972A JP 2003046972 A JP2003046972 A JP 2003046972A JP 4381694 B2 JP4381694 B2 JP 4381694B2
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Japan
Prior art keywords
plasma
sample
gas
surface treatment
mask material
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Expired - Fee Related
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JP2003046972A
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Japanese (ja)
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JP2004259819A (ja
JP2004259819A5 (enExample
Inventor
正俊 尾山
佳幸 大田
剛 吉田
博宣 川原
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2003046972A priority Critical patent/JP4381694B2/ja
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Publication of JP2004259819A5 publication Critical patent/JP2004259819A5/ja
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Publication of JP4381694B2 publication Critical patent/JP4381694B2/ja
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  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003046972A 2003-02-25 2003-02-25 試料の表面処理方法 Expired - Fee Related JP4381694B2 (ja)

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JP2003046972A JP4381694B2 (ja) 2003-02-25 2003-02-25 試料の表面処理方法

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Application Number Priority Date Filing Date Title
JP2003046972A JP4381694B2 (ja) 2003-02-25 2003-02-25 試料の表面処理方法

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JP2004259819A JP2004259819A (ja) 2004-09-16
JP2004259819A5 JP2004259819A5 (enExample) 2005-12-15
JP4381694B2 true JP4381694B2 (ja) 2009-12-09

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JP2003046972A Expired - Fee Related JP4381694B2 (ja) 2003-02-25 2003-02-25 試料の表面処理方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786471B2 (en) 2011-12-27 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma etcher design with effective no-damage in-situ ash

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700494B2 (en) * 2004-12-30 2010-04-20 Tokyo Electron Limited, Inc. Low-pressure removal of photoresist and etch residue
US7902078B2 (en) 2006-02-17 2011-03-08 Tokyo Electron Limited Processing method and plasma etching method
JP4722725B2 (ja) * 2006-02-17 2011-07-13 東京エレクトロン株式会社 処理方法およびプラズマエッチング方法
JP6026375B2 (ja) * 2013-09-02 2016-11-16 株式会社東芝 半導体装置の製造方法
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
WO2025197721A1 (ja) * 2024-03-22 2025-09-25 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786471B2 (en) 2011-12-27 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma etcher design with effective no-damage in-situ ash

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JP2004259819A (ja) 2004-09-16

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