JP4377232B2 - 分布利得媒体を含むレーザ - Google Patents
分布利得媒体を含むレーザ Download PDFInfo
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- JP4377232B2 JP4377232B2 JP2003548363A JP2003548363A JP4377232B2 JP 4377232 B2 JP4377232 B2 JP 4377232B2 JP 2003548363 A JP2003548363 A JP 2003548363A JP 2003548363 A JP2003548363 A JP 2003548363A JP 4377232 B2 JP4377232 B2 JP 4377232B2
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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Description
この実施例は、図1の実施例とよく似ているが、多岐管アセンブリを使用してレーザチャンバ12を通して冷媒流体16を流している。例えば、レーザチャンバの上にある入口多岐管38は、レーザチャンバ12に至るいくつかの入口20に結合され、一方で、チャンバ12の下にある出口多岐管40はレーザチャンバ12のいくつかの出口22に結合されている。留意されたいことであるが、入口多岐管38および出口多岐管40は、図4により適切に示されている。この図4は、以下でより詳細に説明する。多岐管の目的は、レーザチャンバすなわちヘッド全体にわたって一様に流体を分配し、かつ一様な流速および圧力を維持することである。留意されたいことであるが、図4および図5は図3の実施例のレーザチャンバ12をより適切に示す。
ここで、n1=流体1の屈折率
n2=流体2の屈折率
np=固体要素の屈折率
x=混合率
ここで、N0=要素中の吸収イオンの濃度
σa=吸収断面積。
ここで、σeは発光断面積、Nは、励起放射で励起された固体要素14内のイオンの濃度、Nsheetsは、ダイオード放射で励起されたレーザチャンバ内の要素14の数、およびL/cosφは、厚さLの要素のレーザ発光軸に沿った投影である。励起されるイオン濃度は、ほぼN=αaφp(x、y、z)τpである。ここで、φp(x、y、z)は、レーザチャンバ12内の点(x、y、z)での励起ダイオードからの局部光束であり、τpは、励起光の持続時間である。N=αaφp(x、y、z)τpというこの近似は、パルスダイオード励起に適用することができ、励起持続時間中の自然放出または誘導放出を無視する。励起イオン密度は、連続励起の場合、自然放出を考慮する必要があるために、計算するのがより困難である。
ここで、Ipumpは、ダイオード励起放射の放射束密度であり、αaは、先に述べた吸収係数であり、さらにδは、量子欠陥として知られている。量子欠陥は、レーザ媒体の吸収帯と発光帯の間のエネルギー差である。ネオジムの場合には、803nm近くで吸収された光子は1.54eVのエネルギーを有し、1060nm近くの発光は1.17eVのエネルギーを有し、量子欠陥δは(1.54eV−1.17eV)/1.54eV=24%である。言い換えると、励起から吸収される光子ごとに、少なくとも0.37eVが熱として固体材料中に残される。Ipump=400W/cm2の励起束および9cm−1の吸収係数の場合、q'''=864W/cm3の割合で要素14の内部で熱が発生する。励起されたイオンの部分が大きいとき、体積熱発生率のより適切な推定は、次式で与えられる。
ここで、Nexは、上位状態励起イオン密度であり、Epumpは、吸収された励起光子のエネルギーであり、さらにτは、固体材料の上の上位レーザレベルの寿命である。
Claims (18)
- レイジングの方法であって、
レーザデバイスに、所定の内部領域を有しかつ利得媒体を含むレーザチャンバを設けるステップであって、該利得媒体は、前記内部領域内に分布された活性レーザイオンを含む複数の固体要素を有し、該固体要素はシートから構成され、
前記内部領域を通してかつ前記各固体要素のまわりに冷却流体を流すステップと、
半導体レーザダイオードで生成された光励起放射を前記レーザチャンバを通して前記内部領域中に導くステップと、
レーザ発光が前記各固体要素および前記流体を通過するように、前記各固体要素で生成された該レーザ発光を前記レーザチャンバを通して導くステップと
を具え、
前記設けるステップは、前記利得媒体を含んだ前記レーザチャンバを設けることを含み、各固体要素の厚さの寸法Lは、次式で定義され、
- 前記レーザチャンバから流れ出る前記冷却流体の一部を冷却し、かつ前記一部を前記レーザチャンバに戻すように流すステップをさらに具えたことを特徴とする請求項1記載の方法。
- 前記導くステップは、
前記レーザデバイスを少なくとも100Wのパワーレベルで動作させるのに十分な前記光励起放射を供給するステップをさらに具え、
前記固体要素の両端間の寸法を横切った前記固体要素の中心と表面との間の温度差がせいぜい100℃であることを特徴とする請求項1記載の方法。 - 前記導くステップは、半導体レーザダイオードで生成されたパルス光励起放射を、前記チャンバを通して前記内部領域中に導くことを含むことを特徴とする請求項1記載の方法。
- 前記導くステップは、半導体レーザダイオードで生成された連続光励起放射を、前記チャンバを通して前記内部領域中に導くことを含むことを特徴とする請求項1記載の方法。
- 前記利得媒体を含むレーザチャンバを設けるステップにおいて、
前記固体要素の各々の寸法は、10ミクロンから2mmまでであることを特徴とする請求項1記載の方法。 - 前記利得媒体は、少なくとも100Wの平均パワーで前記レーザ発光を生成することを特徴とする請求項1記載の方法。
- 前記冷却流体を流すステップにおいて、該冷却媒体は、レーザ発光の方向に対して横向きの方向に、前記内部領域を通してかつ前記各固体要素のまわりに流れることを特徴とする請求項1記載の方法。
- 前記固体要素が、前記内部領域全体にわたって分布された平らなシートから構成される場合には、前記内部領域を通して冷却流体を流すステップにおいて、該冷却流体は前記平らなシートの各々の間を流れることを特徴とする請求項1記載の方法。
- 前記平らなシートの各々は、レーザ発光の方向に対してある角度の方向で、かつ前記光励起放射に対してある角度の方向に向いていることを特徴とする請求項9記載の方法。
- 前記平らなシートの各々の間の間隔は、前記平らなシートの各々が前記半導体レーザダイオードから同じ量の光励起放射を受け取るように設定されたことを特徴とする請求項10記載の方法。
- 前記平らなシートの各々の間の間隔は、前記光励起放射の方向に関して各平らなシートの一部が隣り合う平らなシートの一部と重なり合うように設定されたことを特徴とする請求項10記載の方法。
- 前記平らなシートの各々の間の間隔は、前記光励起放射の方向に関して隣り合う平らなシートが互いに重なり合わないように設定されたことを特徴とする請求項10記載の方法。
- 前記レーザ発光の波長での前記冷却流体の屈折率は、前記固体要素の屈折率と整合していることを特徴とする請求項1記載の方法。
- 前記冷却流体は、炭素をベースにした材料を具えたことを特徴とする請求項1記載の方法。
- 前記冷却流体を流すステップにおいて、該冷却媒体は前記内部領域を通してかつ前記固体要素間を流れることを特徴とする請求項1記載の方法。
- 前記固体要素の個々は、前記レーザ発光の経路に対してブルスター角の方向に向いていることを特徴とする請求項1記載の方法。
- 前記冷却流体を流すステップは、
前記固体要素のまわりに前記冷却流体の一様な流れを実現する多岐管を用いて、前記内部領域を通してかつ前記各固体要素のまわりに流れることを特徴とする請求項1記載の方法。
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PCT/US2002/037365 WO2003047052A2 (en) | 2001-11-21 | 2002-11-21 | Laser containing a distributed gain medium |
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- 2002-11-21 DE DE60218211T patent/DE60218211T2/de not_active Expired - Lifetime
- 2002-11-21 US US10/302,581 patent/US20030161364A1/en not_active Abandoned
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- 2002-11-21 AU AU2002352846A patent/AU2002352846A1/en not_active Abandoned
- 2002-11-21 JP JP2003548363A patent/JP4377232B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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EP1454386A4 (en) | 2005-03-16 |
US20050271098A1 (en) | 2005-12-08 |
US7103078B2 (en) | 2006-09-05 |
WO2003047053A1 (en) | 2003-06-05 |
AU2002352846A1 (en) | 2003-06-10 |
WO2003047052A3 (en) | 2003-07-10 |
AU2002365559A1 (en) | 2003-06-10 |
US20030161365A1 (en) | 2003-08-28 |
JP2005510887A (ja) | 2005-04-21 |
US20070002921A1 (en) | 2007-01-04 |
US7366211B2 (en) | 2008-04-29 |
US6937629B2 (en) | 2005-08-30 |
WO2003047052A2 (en) | 2003-06-05 |
DE60218211T2 (de) | 2007-10-18 |
EP1454386B1 (en) | 2007-02-14 |
US20030161364A1 (en) | 2003-08-28 |
EP1454386A2 (en) | 2004-09-08 |
DE60218211D1 (de) | 2007-03-29 |
JP2009049439A (ja) | 2009-03-05 |
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