JP4374042B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4374042B2 JP4374042B2 JP2007180381A JP2007180381A JP4374042B2 JP 4374042 B2 JP4374042 B2 JP 4374042B2 JP 2007180381 A JP2007180381 A JP 2007180381A JP 2007180381 A JP2007180381 A JP 2007180381A JP 4374042 B2 JP4374042 B2 JP 4374042B2
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- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 86
- 239000007788 liquid Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 35
- 239000000126 substance Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 description 28
- 239000002253 acid Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 20
- 238000007654 immersion Methods 0.000 description 18
- 239000000243 solution Substances 0.000 description 15
- 238000001035 drying Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
導体基板上に反射防止膜用塗布材料を滴下し回転して広げた後で加熱処理を行い、約50nmの厚さの反射防止膜を形成する(ステップST101)。反射防止膜上に酸発生材を含むArF化学増幅型レジスト膜を膜厚200nmで形成する(ステップST102)。化学増幅型レジストは以下の手順で形成される。スピンコート法により反射防止膜上に化学増幅型レジスト用塗布材料を広げる。そして、加熱処理を行って、塗布材料に含まれる溶剤を除去する。
11…基板支持部
12…駆動部
13…洗浄ノズル
13…ノズル
14…純水
Claims (3)
- 基板上にレジスト膜を形成する工程と、
前記レジスト膜が形成された基板およびパターンが形成されたレチクルを、投影光学系を具備する露光装置に搭載する工程と、
前記レジスト膜上の局所的な領域に第1の液膜を選択形成するために、前記レジスト膜上への第1の薬液の供給と供給された第1の薬液の回収とを行う工程であって、前記第1の液膜は流れを有し、前記第1の液膜は前記レジスト膜と投影光学系との間に形成される工程と、
前記レジスト膜に潜像を形成するために、前記第1の液膜が形成された状態で前記レチクルに形成されたパターンを前記レジスト膜に転写する工程と、
前記転写後、前記基板上の略全面に第2の薬液を供給した後に該第2の薬液を除去する工程と、
前記第2の薬液の除去後、前記潜像が形成されたレジスト膜を加熱する工程と、
前記加熱されたレジスト膜からレジストパターンを形成するために、前記レジスト膜を現像する工程と
を含むレジストパターン形成方法において、
前記液膜が選択形成された領域に前記基板上のレジスト膜のエッジ部分が含まれる場合、前記液膜が有する流れの方向が前記パターンが転写される領域から前記エッジに向かう方向であるように制御し、
前記パターンの転写を、前記投影光学系に対して前記基板及びレチクルを水平移動させるスキャン露光方式で行い、前記基板の移動方向を、前記第1の液膜の流れる方向とほぼ同じとしたことを特徴とするレジストパターン形成方法。 - 前記第1の薬液として水を用い、前記第2の薬液として水又は水よりも気化熱が小さい液体を用いることを特徴とする請求項1記載のレジストパターン形成方法。
- 半導体ウエハを用意する工程と、
請求項1又は2に記載のレジストパターンパターン形成方法を用いて、前記半導体ウエハ上にレジストパターンを形成する工程と、
を含むことを特徴とする半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007180381A JP4374042B2 (ja) | 2007-07-09 | 2007-07-09 | 半導体装置の製造方法 |
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JP2007180381A JP4374042B2 (ja) | 2007-07-09 | 2007-07-09 | 半導体装置の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004087420A Division JP4220423B2 (ja) | 2004-03-24 | 2004-03-24 | レジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007258759A JP2007258759A (ja) | 2007-10-04 |
JP4374042B2 true JP4374042B2 (ja) | 2009-12-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007180381A Expired - Lifetime JP4374042B2 (ja) | 2007-07-09 | 2007-07-09 | 半導体装置の製造方法 |
Country Status (1)
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JP (1) | JP4374042B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7468779B2 (en) | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4893574B2 (ja) * | 2007-10-11 | 2012-03-07 | 東京エレクトロン株式会社 | 表面露光装置、表面露光方法、塗布、現像装置及び記憶媒体 |
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2007
- 2007-07-09 JP JP2007180381A patent/JP4374042B2/ja not_active Expired - Lifetime
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