JP4372847B2 - シリコンオンインシュレータ（ｓｏｉ）集積回路を製造する際のゲッタリング手段を設ける方法 - Google Patents

シリコンオンインシュレータ（ｓｏｉ）集積回路を製造する際のゲッタリング手段を設ける方法 Download PDF

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Publication number
JP4372847B2
JP4372847B2 JP53467599A JP53467599A JP4372847B2 JP 4372847 B2 JP4372847 B2 JP 4372847B2 JP 53467599 A JP53467599 A JP 53467599A JP 53467599 A JP53467599 A JP 53467599A JP 4372847 B2 JP4372847 B2 JP 4372847B2
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silicon
providing
gettering
soi
gettering means
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Japanese (ja)
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JP2001513948A5 (https=
JP2001513948A (ja
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セオドール イェー レタヴィッチ
レネ ペー ジング
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NXP BV
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NXP BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Dicing (AREA)
JP53467599A 1997-12-23 1998-10-05 シリコンオンインシュレータ（ｓｏｉ）集積回路を製造する際のゲッタリング手段を設ける方法 Expired - Fee Related JP4372847B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/996,672 US6093624A (en) 1997-12-23 1997-12-23 Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits
US08/996,672 1997-12-23
PCT/IB1998/001532 WO1999034432A1 (en) 1997-12-23 1998-10-05 Method of providing a gettering scheme in the manufacture of silicon-on-insulator (soi) integrated circuits

Publications (3)

Publication Number Publication Date
JP2001513948A JP2001513948A (ja) 2001-09-04
JP2001513948A5 JP2001513948A5 (https=) 2006-03-02
JP4372847B2 true JP4372847B2 (ja) 2009-11-25

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ID=25543175

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JP53467599A Expired - Fee Related JP4372847B2 (ja) 1997-12-23 1998-10-05 シリコンオンインシュレータ（ｓｏｉ）集積回路を製造する際のゲッタリング手段を設ける方法

Country Status (6)

Country Link
US (1) US6093624A (https=)
EP (1) EP0965141B1 (https=)
JP (1) JP4372847B2 (https=)
KR (1) KR100541539B1 (https=)
DE (1) DE69835505T2 (https=)
WO (1) WO1999034432A1 (https=)

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* Cited by examiner, † Cited by third party
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JP4573953B2 (ja) * 2000-06-27 2010-11-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6498061B2 (en) * 2000-12-06 2002-12-24 International Business Machines Corporation Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation
US6383924B1 (en) * 2000-12-13 2002-05-07 Micron Technology, Inc. Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials
US6444534B1 (en) 2001-01-30 2002-09-03 Advanced Micro Devices, Inc. SOI semiconductor device opening implantation gettering method
US6376336B1 (en) 2001-02-01 2002-04-23 Advanced Micro Devices, Inc. Frontside SOI gettering with phosphorus doping
US6670259B1 (en) 2001-02-21 2003-12-30 Advanced Micro Devices, Inc. Inert atom implantation method for SOI gettering
US7142577B2 (en) * 2001-05-16 2006-11-28 Micron Technology, Inc. Method of forming mirrors by surface transformation of empty spaces in solid state materials and structures thereon
US6898362B2 (en) * 2002-01-17 2005-05-24 Micron Technology Inc. Three-dimensional photonic crystal waveguide structure and method
US6987037B2 (en) * 2003-05-07 2006-01-17 Micron Technology, Inc. Strained Si/SiGe structures by ion implantation
US7662701B2 (en) 2003-05-21 2010-02-16 Micron Technology, Inc. Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
US7501329B2 (en) * 2003-05-21 2009-03-10 Micron Technology, Inc. Wafer gettering using relaxed silicon germanium epitaxial proximity layers
US7008854B2 (en) * 2003-05-21 2006-03-07 Micron Technology, Inc. Silicon oxycarbide substrates for bonded silicon on insulator
US7273788B2 (en) * 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US6929984B2 (en) * 2003-07-21 2005-08-16 Micron Technology Inc. Gettering using voids formed by surface transformation
US7153753B2 (en) * 2003-08-05 2006-12-26 Micron Technology, Inc. Strained Si/SiGe/SOI islands and processes of making same
US20050255677A1 (en) * 2004-05-17 2005-11-17 Weigold Jason W Integrated circuit with impurity barrier
US20060115958A1 (en) * 2004-11-22 2006-06-01 Weigold Jason W Method and apparatus for forming buried oxygen precipitate layers in multi-layer wafers
JP2006196514A (ja) * 2005-01-11 2006-07-27 Nec Electronics Corp 半導体装置及びその製造方法
TWI355046B (en) * 2007-07-10 2011-12-21 Nanya Technology Corp Two bit memory structure and method of making the
US7928690B2 (en) * 2007-11-29 2011-04-19 GM Global Technology Operations LLC Method and system for determining a state of charge of a battery
JP5470766B2 (ja) * 2008-07-18 2014-04-16 株式会社Ｓｕｍｃｏ 半導体デバイスの製造方法
US9231020B2 (en) 2014-01-16 2016-01-05 Tower Semiconductor Ltd. Device and method of gettering on silicon on insulator (SOI) substrate
KR102399356B1 (ko) 2017-03-10 2022-05-19 삼성전자주식회사 기판, 기판의 쏘잉 방법, 및 반도체 소자

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103447A (en) * 1980-01-22 1981-08-18 Toshiba Corp Dicing method of semiconductor wafer
US5096855A (en) * 1988-05-23 1992-03-17 U.S. Philips Corporation Method of dicing semiconductor wafers which produces shards less than 10 microns in size
JPH04266047A (ja) * 1991-02-20 1992-09-22 Fujitsu Ltd 埋め込み層形成に相当するｓｏｉ型半導体装置の製造方法及び半導体装置
US5244819A (en) * 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
US5556793A (en) * 1992-02-28 1996-09-17 Motorola, Inc. Method of making a structure for top surface gettering of metallic impurities
DE4317721C1 (de) * 1993-05-27 1994-07-21 Siemens Ag Verfahren zur Vereinzelung von Chips aus einem Wafer
TW274628B (https=) * 1994-06-03 1996-04-21 At & T Corp
US5429981A (en) * 1994-06-30 1995-07-04 Honeywell Inc. Method of making linear capacitors for high temperature applications
KR0172548B1 (ko) * 1995-06-30 1999-02-01 김주용 반도체 소자 및 그 제조방법
US5646053A (en) * 1995-12-20 1997-07-08 International Business Machines Corporation Method and structure for front-side gettering of silicon-on-insulator substrates
US5622899A (en) * 1996-04-22 1997-04-22 Taiwan Semiconductor Manufacturing Company Ltd. Method of fabricating semiconductor chips separated by scribe lines used for endpoint detection

Also Published As

Publication number Publication date
EP0965141A1 (en) 1999-12-22
WO1999034432A1 (en) 1999-07-08
JP2001513948A (ja) 2001-09-04
DE69835505T2 (de) 2007-04-05
EP0965141B1 (en) 2006-08-09
KR20000076026A (ko) 2000-12-26
DE69835505D1 (de) 2006-09-21
KR100541539B1 (ko) 2006-01-12
US6093624A (en) 2000-07-25

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