JP2001513948A5 - - Google Patents
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- Publication number
- JP2001513948A5 JP2001513948A5 JP1999534675A JP53467599A JP2001513948A5 JP 2001513948 A5 JP2001513948 A5 JP 2001513948A5 JP 1999534675 A JP1999534675 A JP 1999534675A JP 53467599 A JP53467599 A JP 53467599A JP 2001513948 A5 JP2001513948 A5 JP 2001513948A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/996,672 US6093624A (en) | 1997-12-23 | 1997-12-23 | Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits |
| US08/996,672 | 1997-12-23 | ||
| PCT/IB1998/001532 WO1999034432A1 (en) | 1997-12-23 | 1998-10-05 | Method of providing a gettering scheme in the manufacture of silicon-on-insulator (soi) integrated circuits |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001513948A JP2001513948A (ja) | 2001-09-04 |
| JP2001513948A5 true JP2001513948A5 (https=) | 2006-03-02 |
| JP4372847B2 JP4372847B2 (ja) | 2009-11-25 |
Family
ID=25543175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53467599A Expired - Fee Related JP4372847B2 (ja) | 1997-12-23 | 1998-10-05 | シリコンオンインシュレータ（ｓｏｉ）集積回路を製造する際のゲッタリング手段を設ける方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6093624A (https=) |
| EP (1) | EP0965141B1 (https=) |
| JP (1) | JP4372847B2 (https=) |
| KR (1) | KR100541539B1 (https=) |
| DE (1) | DE69835505T2 (https=) |
| WO (1) | WO1999034432A1 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4573953B2 (ja) * | 2000-06-27 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6498061B2 (en) * | 2000-12-06 | 2002-12-24 | International Business Machines Corporation | Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation |
| US6383924B1 (en) * | 2000-12-13 | 2002-05-07 | Micron Technology, Inc. | Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials |
| US6444534B1 (en) | 2001-01-30 | 2002-09-03 | Advanced Micro Devices, Inc. | SOI semiconductor device opening implantation gettering method |
| US6376336B1 (en) | 2001-02-01 | 2002-04-23 | Advanced Micro Devices, Inc. | Frontside SOI gettering with phosphorus doping |
| US6670259B1 (en) | 2001-02-21 | 2003-12-30 | Advanced Micro Devices, Inc. | Inert atom implantation method for SOI gettering |
| US7142577B2 (en) * | 2001-05-16 | 2006-11-28 | Micron Technology, Inc. | Method of forming mirrors by surface transformation of empty spaces in solid state materials and structures thereon |
| US6898362B2 (en) * | 2002-01-17 | 2005-05-24 | Micron Technology Inc. | Three-dimensional photonic crystal waveguide structure and method |
| US6987037B2 (en) * | 2003-05-07 | 2006-01-17 | Micron Technology, Inc. | Strained Si/SiGe structures by ion implantation |
| US7662701B2 (en) | 2003-05-21 | 2010-02-16 | Micron Technology, Inc. | Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers |
| US7501329B2 (en) * | 2003-05-21 | 2009-03-10 | Micron Technology, Inc. | Wafer gettering using relaxed silicon germanium epitaxial proximity layers |
| US7008854B2 (en) * | 2003-05-21 | 2006-03-07 | Micron Technology, Inc. | Silicon oxycarbide substrates for bonded silicon on insulator |
| US7273788B2 (en) * | 2003-05-21 | 2007-09-25 | Micron Technology, Inc. | Ultra-thin semiconductors bonded on glass substrates |
| US6929984B2 (en) * | 2003-07-21 | 2005-08-16 | Micron Technology Inc. | Gettering using voids formed by surface transformation |
| US7153753B2 (en) * | 2003-08-05 | 2006-12-26 | Micron Technology, Inc. | Strained Si/SiGe/SOI islands and processes of making same |
| US20050255677A1 (en) * | 2004-05-17 | 2005-11-17 | Weigold Jason W | Integrated circuit with impurity barrier |
| US20060115958A1 (en) * | 2004-11-22 | 2006-06-01 | Weigold Jason W | Method and apparatus for forming buried oxygen precipitate layers in multi-layer wafers |
| JP2006196514A (ja) * | 2005-01-11 | 2006-07-27 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| TWI355046B (en) * | 2007-07-10 | 2011-12-21 | Nanya Technology Corp | Two bit memory structure and method of making the |
| US7928690B2 (en) * | 2007-11-29 | 2011-04-19 | GM Global Technology Operations LLC | Method and system for determining a state of charge of a battery |
| JP5470766B2 (ja) * | 2008-07-18 | 2014-04-16 | 株式会社Ｓｕｍｃｏ | 半導体デバイスの製造方法 |
| US9231020B2 (en) | 2014-01-16 | 2016-01-05 | Tower Semiconductor Ltd. | Device and method of gettering on silicon on insulator (SOI) substrate |
| KR102399356B1 (ko) | 2017-03-10 | 2022-05-19 | 삼성전자주식회사 | 기판, 기판의 쏘잉 방법, 및 반도체 소자 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56103447A (en) * | 1980-01-22 | 1981-08-18 | Toshiba Corp | Dicing method of semiconductor wafer |
| US5096855A (en) * | 1988-05-23 | 1992-03-17 | U.S. Philips Corporation | Method of dicing semiconductor wafers which produces shards less than 10 microns in size |
| JPH04266047A (ja) * | 1991-02-20 | 1992-09-22 | Fujitsu Ltd | 埋め込み層形成に相当するｓｏｉ型半導体装置の製造方法及び半導体装置 |
| US5244819A (en) * | 1991-10-22 | 1993-09-14 | Honeywell Inc. | Method to getter contamination in semiconductor devices |
| US5556793A (en) * | 1992-02-28 | 1996-09-17 | Motorola, Inc. | Method of making a structure for top surface gettering of metallic impurities |
| DE4317721C1 (de) * | 1993-05-27 | 1994-07-21 | Siemens Ag | Verfahren zur Vereinzelung von Chips aus einem Wafer |
| TW274628B (https=) * | 1994-06-03 | 1996-04-21 | At & T Corp | |
| US5429981A (en) * | 1994-06-30 | 1995-07-04 | Honeywell Inc. | Method of making linear capacitors for high temperature applications |
| KR0172548B1 (ko) * | 1995-06-30 | 1999-02-01 | 김주용 | 반도체 소자 및 그 제조방법 |
| US5646053A (en) * | 1995-12-20 | 1997-07-08 | International Business Machines Corporation | Method and structure for front-side gettering of silicon-on-insulator substrates |
| US5622899A (en) * | 1996-04-22 | 1997-04-22 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of fabricating semiconductor chips separated by scribe lines used for endpoint detection |
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1997
- 1997-12-23 US US08/996,672 patent/US6093624A/en not_active Expired - Lifetime
-
1998
- 1998-10-05 EP EP98944161A patent/EP0965141B1/en not_active Expired - Lifetime
- 1998-10-05 KR KR1019997008112A patent/KR100541539B1/ko not_active Expired - Fee Related
- 1998-10-05 JP JP53467599A patent/JP4372847B2/ja not_active Expired - Fee Related
- 1998-10-05 WO PCT/IB1998/001532 patent/WO1999034432A1/en not_active Ceased
- 1998-10-05 DE DE69835505T patent/DE69835505T2/de not_active Expired - Lifetime