JP4370319B2 - イメージセンサモジュール及びカメラモジュールパッケージ - Google Patents
イメージセンサモジュール及びカメラモジュールパッケージ Download PDFInfo
- Publication number
- JP4370319B2 JP4370319B2 JP2006310551A JP2006310551A JP4370319B2 JP 4370319 B2 JP4370319 B2 JP 4370319B2 JP 2006310551 A JP2006310551 A JP 2006310551A JP 2006310551 A JP2006310551 A JP 2006310551A JP 4370319 B2 JP4370319 B2 JP 4370319B2
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- sensor module
- substrate
- dummy pattern
- module according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 51
- 239000007788 liquid Substances 0.000 claims description 46
- 230000008569 process Effects 0.000 claims description 32
- 239000000853 adhesive Substances 0.000 claims description 26
- 230000001070 adhesive effect Effects 0.000 claims description 26
- 229920000642 polymer Polymers 0.000 claims description 21
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Studio Devices (AREA)
Description
位置より外郭部にディスペンスされことを特徴とする。
図5は、本発明の一実施の形態に係るイメージセンサモジュール用基板に対する平面図を示し、図6は、本発明の他の実施の形態に係るイメージセンサモジュール用基板に対する平面図を示す。
きさのウィンドウ32が形成されている。ここで、前記基板31として、FPCBまたはリジッドフレキシブルプリント回路基板(以下、「RFPCB」という)などのように可撓性を有するポリイミド(polyimide)などの樹脂基板が用いられることができる。特に、基板31として、両面FPCBまたはRFPCBを用いる場合、前記イメージセンサ33が付着された基板31の一面(下面)の反対側面(上面)上に、MLCCなどのような少なくとも1つ以上の電子部品38を実装でき、全体イメージセンサモジュールのサイズを減らすようになる。
1にディスペンスされて塗布される。
図7は、上述の本発明に係るイメージセンサモジュール用基板を適用したイメージセンサモジュール及びこれを利用したカメラモジュールパッケージを示す分解斜視図である。
31 基板
32 ウィンドウ
33 イメージセンサ
34 パッド
35 回路パターン
36,37 ダミーパターン
A 溢れ現象を起こした部分
Claims (6)
- イメージセンサモジュールにおいて、
外部から入力されるイメージが撮像されるピクセル領域部と、該ピクセル領域部から撮像されたイメージに対する電気的信号を処理するために、イメージセンサの外郭部にバンプが形成された信号処理領域部と、からなるイメージセンサと、
前記イメージセンサと液状接着剤により付着され、前記イメージセンサのピクセル領域部で受光可能にウィンドウが備えられ、該ウィンドウの周囲の少なくとも一部に形成されたダミーパターンと、該ダミーパターンから外側方向に所定距離が離間した位置に形成された回路パターンと、前記回路パターンと電気的に接続し、前記イメージセンサに形成さ れたバンプと接触するように形成された基板側パッドと、からなるFPCB基板と、
を備え、
前記ダミーパターンは離散的に形成され、少なくとも、前記液状接着剤がディスペンスされる出発点と終末点とが重畳する部分に前記ダミーパターンが形成されていることを特徴とするイメージセンサモジュール。 - 前記液状接着剤は、非導電性液状ポリマー(NCP)であることを特徴とする請求項1に記載のイメージセンサモジュール。
- 前記液状接着剤は、前記基板側パッドが形成された位置より外郭部にディスペンスされたことを特徴とする請求項1または2に記載のイメージセンサモジュール。
- 前記ダミーパターンと回路パターンとの間に第2ダミーパターンをさらに含むことを特徴とする請求項1〜3のいずれか一項に記載のイメージセンサモジュール。
- 前記ダミーパターンと第2ダミーパターンとが、互いに接続するように一体に形成されたことを特徴とする請求項4に記載のイメージセンサモジュール。
- 複数のレンズが装着されたレンズバレルと、
前記レンズバレルを通過する光から撮像するための請求項1〜5のいずれか一項に記載のイメージセンサモジュールと、
前記レンズバレルとその上段部から結合し、前記イメージセンサモジュールとその下段部から結合するハウジングと、
を備えるカメラモジュールパッケージ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050113823A KR100730077B1 (ko) | 2005-11-25 | 2005-11-25 | 이미지센서 모듈과 카메라모듈 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007151112A JP2007151112A (ja) | 2007-06-14 |
JP4370319B2 true JP4370319B2 (ja) | 2009-11-25 |
Family
ID=38112629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006310551A Expired - Fee Related JP4370319B2 (ja) | 2005-11-25 | 2006-11-16 | イメージセンサモジュール及びカメラモジュールパッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8300124B2 (ja) |
JP (1) | JP4370319B2 (ja) |
KR (1) | KR100730077B1 (ja) |
CN (1) | CN1971928A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100009776A (ko) * | 2008-07-21 | 2010-01-29 | 삼성전기주식회사 | 휴대폰 내장형 이미지센서 모듈 및 이의 제조방법 |
EP2337519A4 (en) * | 2008-09-24 | 2012-04-18 | Dentsply Int Inc | IMAGING DEVICE FOR DENTAL INSTRUMENTS AND INTRAORAL VISUALIZATION METHODS |
KR101167159B1 (ko) | 2011-04-22 | 2012-07-24 | (주)세미솔루션 | 씨씨디 카메라용 센서 통합 칩 |
TW201410007A (zh) * | 2012-08-16 | 2014-03-01 | Hon Hai Prec Ind Co Ltd | 影像感測器模組及取像模組 |
US20220367556A1 (en) * | 2019-10-21 | 2022-11-17 | Ningbo Sunny Opotech Co., Ltd. | Circuit board assembly, photosensitive assembly, camera module, and preparation methods for circuit board assembly and photosensitive assembly |
CN112770476A (zh) * | 2019-10-21 | 2021-05-07 | 宁波舜宇光电信息有限公司 | 线路板组件、感光组件、摄像模组和线路板组件制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3207319B2 (ja) | 1993-05-28 | 2001-09-10 | 株式会社東芝 | 光電変換装置及びその製造方法 |
CN1971899B (zh) * | 1997-10-17 | 2010-05-12 | 揖斐电株式会社 | 封装基板 |
JPH11307886A (ja) * | 1998-04-21 | 1999-11-05 | Matsushita Electric Ind Co Ltd | フリップチップ接合ランドうねり防止パターン |
US6563148B2 (en) * | 2000-04-19 | 2003-05-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with dummy patterns |
JP2002203905A (ja) * | 2000-12-28 | 2002-07-19 | Mitsubishi Electric Corp | レイアウト設計装置、レイアウト設計方法および半導体装置 |
JP4934935B2 (ja) | 2001-09-19 | 2012-05-23 | ソニー株式会社 | 固体撮像装置 |
KR100718421B1 (ko) * | 2002-06-28 | 2007-05-14 | 교세라 가부시키가이샤 | 소형 모듈 카메라, 카메라 모듈, 카메라 모듈 제조 방법 및 촬상 소자의 패키징 방법 |
CN2566454Y (zh) | 2002-08-21 | 2003-08-13 | 南茂科技股份有限公司 | 防止压模溢胶的电路基板 |
JP2004096638A (ja) | 2002-09-03 | 2004-03-25 | Canon Inc | 撮像装置およびその製造方法 |
JP2004247611A (ja) | 2003-02-14 | 2004-09-02 | Matsushita Electric Works Ltd | 半導体素子実装基板、半導体素子実装基板の製造方法 |
JP4372434B2 (ja) | 2003-02-24 | 2009-11-25 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
JP2005116628A (ja) | 2003-10-03 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
TWI234884B (en) * | 2003-12-31 | 2005-06-21 | Advanced Semiconductor Eng | Image sensor package and method for manufacturing the same |
KR100625870B1 (ko) * | 2004-05-19 | 2006-09-20 | 엑스퀴지트 옵티칼 테크날러지 코오퍼레이션 리미티드 | 감지영역용 보호 패키지 구조를 갖는 영상센서 |
TWM264651U (en) * | 2004-10-21 | 2005-05-11 | Chipmos Technologies Inc | Package structure of image sensor device |
JP4685601B2 (ja) * | 2005-11-16 | 2011-05-18 | 新光電気工業株式会社 | 実装基板および半導体装置 |
JP4963989B2 (ja) * | 2007-03-08 | 2012-06-27 | パナソニック株式会社 | 半導体素子搭載用基板およびその製造方法 |
-
2005
- 2005-11-25 KR KR1020050113823A patent/KR100730077B1/ko not_active IP Right Cessation
-
2006
- 2006-10-18 US US11/582,406 patent/US8300124B2/en not_active Expired - Fee Related
- 2006-11-16 CN CNA2006101381843A patent/CN1971928A/zh active Pending
- 2006-11-16 JP JP2006310551A patent/JP4370319B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20070055291A (ko) | 2007-05-30 |
US8300124B2 (en) | 2012-10-30 |
KR100730077B1 (ko) | 2007-06-19 |
US20070126899A1 (en) | 2007-06-07 |
JP2007151112A (ja) | 2007-06-14 |
CN1971928A (zh) | 2007-05-30 |
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