JP4367299B2 - 発光素子デバイス及び発光素子デバイスの製造方法 - Google Patents

発光素子デバイス及び発光素子デバイスの製造方法 Download PDF

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Publication number
JP4367299B2
JP4367299B2 JP2004263097A JP2004263097A JP4367299B2 JP 4367299 B2 JP4367299 B2 JP 4367299B2 JP 2004263097 A JP2004263097 A JP 2004263097A JP 2004263097 A JP2004263097 A JP 2004263097A JP 4367299 B2 JP4367299 B2 JP 4367299B2
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Prior art keywords
glass
electrode
emitting element
light
light emitting
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Expired - Fee Related
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JP2004263097A
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English (en)
Japanese (ja)
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JP2006080316A5 (enExample
JP2006080316A (ja
Inventor
好伸 末広
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2004263097A priority Critical patent/JP4367299B2/ja
Priority to US11/220,405 priority patent/US7417220B2/en
Publication of JP2006080316A publication Critical patent/JP2006080316A/ja
Publication of JP2006080316A5 publication Critical patent/JP2006080316A5/ja
Priority to US12/155,820 priority patent/US8017967B2/en
Application granted granted Critical
Publication of JP4367299B2 publication Critical patent/JP4367299B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

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JP2004263097A 2004-09-09 2004-09-09 発光素子デバイス及び発光素子デバイスの製造方法 Expired - Fee Related JP4367299B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004263097A JP4367299B2 (ja) 2004-09-09 2004-09-09 発光素子デバイス及び発光素子デバイスの製造方法
US11/220,405 US7417220B2 (en) 2004-09-09 2005-09-07 Solid state device and light-emitting element
US12/155,820 US8017967B2 (en) 2004-09-09 2008-06-10 Light-emitting element including a fusion-bonding portion on contact electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004263097A JP4367299B2 (ja) 2004-09-09 2004-09-09 発光素子デバイス及び発光素子デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009063663A Division JP2009135539A (ja) 2009-03-16 2009-03-16 固体素子デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2006080316A JP2006080316A (ja) 2006-03-23
JP2006080316A5 JP2006080316A5 (enExample) 2007-03-15
JP4367299B2 true JP4367299B2 (ja) 2009-11-18

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JP2004263097A Expired - Fee Related JP4367299B2 (ja) 2004-09-09 2004-09-09 発光素子デバイス及び発光素子デバイスの製造方法

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JP (1) JP4367299B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5154516B2 (ja) 2009-05-22 2013-02-27 シャープ株式会社 太陽電池モジュール及び太陽電池モジュールの製造方法
KR101714049B1 (ko) * 2010-10-29 2017-03-08 엘지이노텍 주식회사 발광 소자 패키지
KR101824034B1 (ko) * 2011-05-24 2018-01-31 엘지이노텍 주식회사 발광 소자 패키지
KR101891257B1 (ko) 2012-04-02 2018-08-24 삼성전자주식회사 반도체 발광장치 및 그 제조방법

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JP2006080316A (ja) 2006-03-23

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