JP4365566B2 - 光強度シミュレーション方法及びフォトマスクの設計方法 - Google Patents

光強度シミュレーション方法及びフォトマスクの設計方法 Download PDF

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Publication number
JP4365566B2
JP4365566B2 JP2002224038A JP2002224038A JP4365566B2 JP 4365566 B2 JP4365566 B2 JP 4365566B2 JP 2002224038 A JP2002224038 A JP 2002224038A JP 2002224038 A JP2002224038 A JP 2002224038A JP 4365566 B2 JP4365566 B2 JP 4365566B2
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Japan
Prior art keywords
light intensity
photomask
influence
local flare
calculation point
Prior art date
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Expired - Fee Related
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JP2002224038A
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English (en)
Japanese (ja)
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JP2004062096A (ja
JP2004062096A5 (enExample
Inventor
広貴 二谷
森美 大澤
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Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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Priority to JP2002224038A priority Critical patent/JP4365566B2/ja
Priority to US10/353,938 priority patent/US6862726B2/en
Publication of JP2004062096A publication Critical patent/JP2004062096A/ja
Publication of JP2004062096A5 publication Critical patent/JP2004062096A5/ja
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Publication of JP4365566B2 publication Critical patent/JP4365566B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2002224038A 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法 Expired - Fee Related JP4365566B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002224038A JP4365566B2 (ja) 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法
US10/353,938 US6862726B2 (en) 2002-07-31 2003-01-30 Light intensity simulation method, program product, and designing method of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002224038A JP4365566B2 (ja) 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法

Publications (3)

Publication Number Publication Date
JP2004062096A JP2004062096A (ja) 2004-02-26
JP2004062096A5 JP2004062096A5 (enExample) 2005-10-27
JP4365566B2 true JP4365566B2 (ja) 2009-11-18

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JP2002224038A Expired - Fee Related JP4365566B2 (ja) 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法

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US (1) US6862726B2 (enExample)
JP (1) JP4365566B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7392168B2 (en) * 2001-03-13 2008-06-24 Yuri Granik Method of compensating for etch effects in photolithographic processing
US7861207B2 (en) * 2004-02-25 2010-12-28 Mentor Graphics Corporation Fragmentation point and simulation site adjustment for resolution enhancement techniques
US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
JP2007536581A (ja) 2004-05-07 2007-12-13 メンター・グラフィクス・コーポレーション プロセス変動バンドを用いた集積回路レイアウト設計法
JP4481723B2 (ja) * 2004-05-25 2010-06-16 株式会社東芝 評価方法、マスクパターン補正方法、半導体装置の製造方法、及びプログラム
US7177010B2 (en) * 2004-11-03 2007-02-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8056022B2 (en) 2006-11-09 2011-11-08 Mentor Graphics Corporation Analysis optimizer
US7739650B2 (en) * 2007-02-09 2010-06-15 Juan Andres Torres Robles Pre-bias optical proximity correction
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
JP2009192811A (ja) * 2008-02-14 2009-08-27 Toshiba Corp リソグラフィーシミュレーション方法およびプログラム
JP2011066079A (ja) * 2009-09-15 2011-03-31 Toshiba Corp フレア補正方法及び半導体デバイスの製造方法
DE102010030758B4 (de) * 2010-06-30 2018-07-19 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Steuerung kritischer Abmessungen in optischen Abbildungsprozessen für die Halbleiterherstellung durch Extraktion von Abbildungsfehlern auf der Grundlage abbildungsanlagenspezifischer Intensitätsmessungen und Simulationen
CN108733854A (zh) * 2017-04-18 2018-11-02 光宝电子(广州)有限公司 光学建模方法及其电子装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768900B2 (ja) * 1994-05-10 1998-06-25 富士通株式会社 電磁界強度算出装置
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
KR100257710B1 (ko) * 1996-12-27 2000-06-01 김영환 리소그라피 공정의 시물레이션 방법
JP3223965B2 (ja) * 1998-07-10 2001-10-29 日本電気株式会社 化学増幅型レジスト形状の計算方法及び記録媒体
WO2000063729A1 (en) * 1999-04-15 2000-10-26 Gilson Greyson H Method and apparatus for reference distribution aerial image formation
US6606739B2 (en) * 2000-11-14 2003-08-12 Ball Semiconductor, Inc. Scaling method for a digital photolithography system
US6745372B2 (en) * 2002-04-05 2004-06-01 Numerical Technologies, Inc. Method and apparatus for facilitating process-compliant layout optimization

Also Published As

Publication number Publication date
US20040025138A1 (en) 2004-02-05
JP2004062096A (ja) 2004-02-26
US6862726B2 (en) 2005-03-01

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