JP4364674B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4364674B2
JP4364674B2 JP2004053312A JP2004053312A JP4364674B2 JP 4364674 B2 JP4364674 B2 JP 4364674B2 JP 2004053312 A JP2004053312 A JP 2004053312A JP 2004053312 A JP2004053312 A JP 2004053312A JP 4364674 B2 JP4364674 B2 JP 4364674B2
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Prior art keywords
laser
film
laser beam
substrate
semiconductor film
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Expired - Fee Related
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JP2004053312A
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Japanese (ja)
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JP2004282060A5 (enExample
JP2004282060A (ja
Inventor
幸一郎 田中
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004053312A priority Critical patent/JP4364674B2/ja
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Publication of JP2004282060A5 publication Critical patent/JP2004282060A5/ja
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Publication of JP4364674B2 publication Critical patent/JP4364674B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2004053312A 2003-02-28 2004-02-27 半導体装置の作製方法 Expired - Fee Related JP4364674B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004053312A JP4364674B2 (ja) 2003-02-28 2004-02-27 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003054695 2003-02-28
JP2004053312A JP4364674B2 (ja) 2003-02-28 2004-02-27 半導体装置の作製方法

Publications (3)

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JP2004282060A JP2004282060A (ja) 2004-10-07
JP2004282060A5 JP2004282060A5 (enExample) 2006-05-25
JP4364674B2 true JP4364674B2 (ja) 2009-11-18

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JP2004053312A Expired - Fee Related JP4364674B2 (ja) 2003-02-28 2004-02-27 半導体装置の作製方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4481040B2 (ja) * 2003-03-07 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE102004030268B4 (de) * 2003-06-24 2013-02-21 Fuji Electric Co., Ltd Verfahren zum Herstellen eines Halbleiterelements
KR100968687B1 (ko) 2005-08-03 2010-07-06 페톤 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치의 제조 장치
JP5087828B2 (ja) 2005-08-26 2012-12-05 富士電機株式会社 半導体装置の製造方法
JP2009081383A (ja) * 2007-09-27 2009-04-16 Hitachi Displays Ltd 薄膜半導体素子を備えた表示装置及び薄膜半導体素子の製造方法
CN102157344B (zh) * 2010-11-25 2013-01-30 清华大学 一种用于深紫外激光退火的加热片台扫描装置及退火工艺

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JP2004282060A (ja) 2004-10-07

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