JP4357659B2 - 圧電体装置及びその製造方法 - Google Patents

圧電体装置及びその製造方法 Download PDF

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Publication number
JP4357659B2
JP4357659B2 JP23734999A JP23734999A JP4357659B2 JP 4357659 B2 JP4357659 B2 JP 4357659B2 JP 23734999 A JP23734999 A JP 23734999A JP 23734999 A JP23734999 A JP 23734999A JP 4357659 B2 JP4357659 B2 JP 4357659B2
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Japan
Prior art keywords
piezoelectric
layer
ultrafine particle
particle layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23734999A
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English (en)
Japanese (ja)
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JP2000200930A5 (https=
JP2000200930A (ja
Inventor
真理 若林
正隆 新荻
寿彦 作原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP23734999A priority Critical patent/JP4357659B2/ja
Priority to US09/426,659 priority patent/US6469421B1/en
Publication of JP2000200930A publication Critical patent/JP2000200930A/ja
Publication of JP2000200930A5 publication Critical patent/JP2000200930A5/ja
Application granted granted Critical
Publication of JP4357659B2 publication Critical patent/JP4357659B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Micromachines (AREA)
JP23734999A 1998-10-26 1999-08-24 圧電体装置及びその製造方法 Expired - Fee Related JP4357659B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP23734999A JP4357659B2 (ja) 1998-10-26 1999-08-24 圧電体装置及びその製造方法
US09/426,659 US6469421B1 (en) 1998-10-26 1999-10-25 Piezoelectric device and production method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-304417 1998-10-26
JP10304417 1998-10-26
JP23734999A JP4357659B2 (ja) 1998-10-26 1999-08-24 圧電体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000200930A JP2000200930A (ja) 2000-07-18
JP2000200930A5 JP2000200930A5 (https=) 2005-10-27
JP4357659B2 true JP4357659B2 (ja) 2009-11-04

Family

ID=26533170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23734999A Expired - Fee Related JP4357659B2 (ja) 1998-10-26 1999-08-24 圧電体装置及びその製造方法

Country Status (2)

Country Link
US (1) US6469421B1 (https=)
JP (1) JP4357659B2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW511122B (en) * 1999-12-10 2002-11-21 Ebara Corp Method for mounting semiconductor device and structure thereof
JP2002040338A (ja) * 2000-07-27 2002-02-06 Seiko Instruments Inc 光通信機器及びその制御方法
US20030075936A1 (en) * 2001-10-19 2003-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer blade equipped with piezoelectric sensors
JP4729260B2 (ja) * 2004-02-18 2011-07-20 富士フイルム株式会社 積層構造体及びその製造方法
JP3910209B2 (ja) * 2004-03-05 2007-04-25 松下電器産業株式会社 圧電体素子、インクジェットヘッド、角速度センサ、これらの製造方法及びインクジェット式記録装置
JP4849432B2 (ja) * 2004-03-30 2012-01-11 ブラザー工業株式会社 圧電膜の製造方法、基板と圧電膜との積層構造、圧電アクチュエータおよびその製造方法
JP5089860B2 (ja) * 2004-12-03 2012-12-05 富士フイルム株式会社 圧電アクチュエータ及び液体吐出ヘッド
DE602006017457D1 (de) * 2005-02-21 2010-11-25 Brother Ind Ltd Verfahren zur Herstellung eines piezoelektrischen Aktors
JP2008130767A (ja) * 2006-11-20 2008-06-05 Canon Inc 振動体の製造方法、振動体および振動型駆動装置
JP5585209B2 (ja) * 2009-05-28 2014-09-10 株式会社リコー 電気機械変換素子の製造方法、該製造方法により製造した電気機械変換素子、液滴吐出ヘッド及び液滴吐出装置
US20100331974A1 (en) * 2009-06-26 2010-12-30 Schaper Jr Dale Thomas Intraocular Kinetic Power Generator
CN103916048B (zh) * 2013-01-07 2016-10-12 北京嘉岳同乐极电子有限公司 压电震动发电装置及其制造方法
JP6724502B2 (ja) * 2016-04-06 2020-07-15 セイコーエプソン株式会社 超音波装置
US10297741B1 (en) 2017-12-14 2019-05-21 Eastman Kodak Company Electrically-conductive compositions
US10777732B2 (en) 2017-12-14 2020-09-15 Eastman Kodak Company Piezoelectric composite articles
US10763421B2 (en) 2017-12-14 2020-09-01 Eastman Kodak Company Piezoelectric article with dielectric layer and co-planar electrodes
US10763422B2 (en) 2017-12-14 2020-09-01 Eastman Kodak Company Composite article with co-planar electrodes
US11251359B2 (en) 2017-12-14 2022-02-15 Eastman Kodak Company Piezoelectric capacitor
US10763424B2 (en) 2017-12-14 2020-09-01 Eastman Kodak Company Composite articles with dielectric layer
US10305022B1 (en) 2017-12-14 2019-05-28 Eastman Kodak Company Silver-containing electrically-conductive compositions
US10818835B2 (en) 2017-12-14 2020-10-27 Eastman Kodak Company Inertial piezoelectric device
DE102018221047A1 (de) * 2018-04-05 2019-10-10 Continental Reifen Deutschland Gmbh Vorrichtung zum Messen einer mechanischen Kraft, umfassend eine erste, zweite, dritte, vierte und fünfte Schicht sowie die Verwendungen der Vorrichtung und Reifen oder technischer Gummiartikel umfassend die Vorrichtung
JP2019187143A (ja) * 2018-04-12 2019-10-24 豊田合成株式会社 積層型誘電アクチュエータの製造方法
US12010920B2 (en) * 2021-02-08 2024-06-11 Wisconsin Alumni Research Foundation 3D-printed ferroelectric metamaterial with giant piezoelectricity and biomimetic mechanical toughness
CN117545337B (zh) * 2024-01-09 2024-04-09 北京青禾晶元半导体科技有限责任公司 一种压电衬底结构及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
US6158847A (en) * 1995-07-14 2000-12-12 Seiko Epson Corporation Laminated ink-jet recording head, a process for production thereof and a printer equipped with the recording head
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド
JP3682684B2 (ja) * 1997-10-20 2005-08-10 セイコーエプソン株式会社 圧電体薄膜素子の製造方法

Also Published As

Publication number Publication date
JP2000200930A (ja) 2000-07-18
US6469421B1 (en) 2002-10-22

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